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61. 发明授权

US09072592B2 Methods for producing and using silk nanofiber nerve conduits 有权
标题翻译：丝绸纳米纤维神经导管的生产和使用方法
公开(公告)号：US09072592B2
公开(公告)日：2015-07-07
申请号：US13389787
申请日：2010-08-11
申请人： Young Hwan Park , Chang Seok Ki , Hyun Jeung Kim , Sook Young Park
发明人： Young Hwan Park , Chang Seok Ki , Hyun Jeung Kim , Sook Young Park
IPC分类号： D01D5/06 , A61F2/04 , D01D1/02 , D01D1/06 , D01D5/00 , D01F4/02 , A61L27/36 , A61L27/56
CPC分类号： A61F2/04 , A61L27/3604 , A61L27/56 , A61L2400/12 , A61L2430/32 , D01D1/02 , D01D1/06 , D01D5/003 , D01D5/0046 , D01D5/0076 , D01F4/02
摘要： The present invention relates to a silk nanofiber nerve conduit characterized in that fibroin nanofibers having a diameter of 200 to 400 nm, originated from silk fiber, are stacked layer upon layer to form a porous conduit-shape; and a method for producing thereof, more specifically, to a method for producing a silk nanofiber nerve conduit comprising: (Step 1) preparing a fibrous spinning solution; (Step 2) producing a silk nanofiber of conduit-shape by electrospinning the fibrous spinning solution prepared in step 1 into the cylindrical collecting part coated with polyethyleneoxide; and (Step 3) separating a silk nanofiber of conduit-shape produced in step 2 from the collecting part. The silk nanofiber nerve conduit of the present invention has excellent biocompatibility; allows the body fluid to be exchanged inter in and out of conduit through pores of the conduit, as well; has a proper elasticity, tensile strength, and tear strength. Due to these properties, the silk nanofiber nerve conduit of the present invention helps the regeneration of the nerve injury to recover a motor skill and a sensory function, and thus shows an excellent effect of nerve regeneration. Therefore, the silk nanofiber nerve conduit of the present invention can be used in treating a nerve injury instead of an existing synthetic polymeric nerve conduit.
摘要翻译：本发明涉及一种丝绸纳米纤维神经管，其特征在于，由丝纤维形成的直径为200〜400nm的丝心蛋白纳米纤维层叠在层上，形成多孔导管状; 及其制造方法，更具体地说，涉及一种丝素纳米纤维神经导管的制造方法，其特征在于，包括：（步骤1）制备纤维纺丝溶液; （步骤2）通过将步骤1中制备的纤维纺丝溶液静电纺丝到涂覆有聚环氧乙烷的圆柱形收集部分中来生产导管形状的丝素纳米纤维; 和（步骤3）将在步骤2中产生的导管形状的丝纳米纤维与收集部分分离。本发明的丝素纳米纤维神经管具有优异的生物相容性; 允许体液通过导管的孔隙进入和导出; 具有适当的弹性，拉伸强度和撕裂强度。由于这些特性，本发明的丝纳米纤维神经管有助于神经损伤的再生以恢复运动技能和感觉功能，因此显示出优异的神经再生效果。因此，本发明的丝纳米纤维神经管可用于治疗神经损伤而不是现有的合成聚合物神经导管。

62. 发明授权

US08735940B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08735940B2
公开(公告)日：2014-05-27
申请号：US12965640
申请日：2010-12-10
申请人： Woo Chul Jeon , Ki Yeol Park , Young Hwan Park , Jung Hee Lee
发明人： Woo Chul Jeon , Ki Yeol Park , Young Hwan Park , Jung Hee Lee
IPC分类号： H01L29/66
CPC分类号： H01L29/7786 , H01L29/2003 , H01L29/66462
摘要： There are provided a semiconductor device and a method for manufacturing the same. The semiconductor device according to the present invention includes a base substrate; a semiconductor layer that includes a receiving groove and a protrusion part formed on the base substrate, a first carrier injection layer and at least two insulating layers formed to traverse the first carrier injection layer formed in the semiconductor layer, and a second carrier injection layer spaced apart from the first carrier injection layer formed on the protrusion part; a source electrode and a drain electrode that are disposed to be spaced apart from each other on the semiconductor layer; and a gate electrode that is insulated from the source electrode and the drain electrode and has a recess part recessed into the receiving groove, wherein the lowest end portion of the receiving groove contacts the uppermost layer of the first carrier injection layer and the insulating pattern disposed at the innermost side of the semiconductor layer among the insulating patterns traverses the entire layer forming the first carrier injection layer and is disposed at the outer side of both side end portions in the thickness direction of the receiving groove.
摘要翻译：提供了一种半导体器件及其制造方法。根据本发明的半导体器件包括：基底; 半导体层，其包括形成在所述基底基板上的接收槽和突出部，第一载流子注入层和形成为穿过形成在所述半导体层中的所述第一载流子注入层的至少两个绝缘层，以及间隔开的第二载流子注入层除了形成在突出部上的第一载流子注入层之外; 源电极和漏电极，其设置成在半导体层上彼此间隔开; 以及与源电极和漏电极绝缘并且具有凹入到接收槽中的凹部的栅电极，其中接收槽的最低端部接触第一载流子注入层的最上层，并且布置的绝缘图案在绝缘图案中的半导体层的最内侧穿过形成第一载流子注入层的整个层，并且设置在接收槽的厚度方向上的两个侧端部的外侧。

63. 发明授权

US08525231B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08525231B2
公开(公告)日：2013-09-03
申请号：US12965649
申请日：2010-12-10
申请人： Ki Yeol Park , Woo Chul Jeon , Young Hwan Park , Jung Hee Lee
发明人： Ki Yeol Park , Woo Chul Jeon , Young Hwan Park , Jung Hee Lee
IPC分类号： H01L29/66
CPC分类号： H01L29/7786 , H01L29/0649 , H01L29/2003 , H01L29/365 , H01L29/4236 , H01L29/66462 , H01L29/78681
摘要： There is provided a semiconductor device and a method of manufacturing the same. The semiconductor device includes a base substrate; a semiconductor layer having a receiving groove, a protrusion part, a first carrier injection layer, at least two insulating patterns, and a second carrier injection layer provided on the base substrate, the insulating patterns being disposed to traverse the first carrier injection layer and the second carrier injection layer being spaced apart from the first carrier injection layer and disposed on a lower portion of the protrusion part; a source electrode and a drain electrode disposed to be spaced apart from each other on the semiconductor layer; and a gate electrode insulated from the source electrode and the drain electrode and having a recess part recessed into the receiving groove, wherein a lowest portion of the receiving groove contacts an uppermost layer of the first carrier injection layer or is disposed above the uppermost layer thereof, and an insulating pattern, disposed at an innermost portion of the semiconductor layer among the insulating patterns, traverses the first carrier injection layer and is disposed at the outside of both sides of the receiving groove in a thickness direction thereof.
摘要翻译：提供了一种半导体器件及其制造方法。半导体器件包括：基底; 具有接收槽的半导体层，突起部分，第一载流子注入层，至少两个绝缘图案和设置在基底基板上的第二载流子注入层，绝缘图案设置成穿过第一载流子注入层和第二载体注入层与第一载体注入层间隔开并设置在突出部分的下部; 源电极和漏电极，设置成在半导体层上彼此间隔开; 以及与源电极和漏电极绝缘的栅电极，并且具有凹入到所述接收槽中的凹部，其中所述接收槽的最下部接触所述第一载流子注入层的最上层，或者设置在所述第一载流子注入层的最上层并且绝缘图案设置在绝缘图案中的半导体层的最内部，穿过第一载流子注入层，并且沿着其厚度方向设置在容纳槽的两侧的外侧。

64. 发明授权

US08319308B2 Semiconductor device and method for manufacturing of the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08319308B2
公开(公告)日：2012-11-27
申请号：US12654897
申请日：2010-01-07
申请人： Woo Chul Jeon , Jung Hee Lee , Young Hwan Park , Ki Yeol Park
发明人： Woo Chul Jeon , Jung Hee Lee , Young Hwan Park , Ki Yeol Park
IPC分类号： H01L21/322 , H01L29/47
CPC分类号： H01L29/0692 , H01L29/861 , H01L29/872
摘要： The present invention provides a semiconductor device including: a base substrate; a first semiconductor layer disposed on the base substrate; first ohmic electrodes disposed on a central region of the first semiconductor layer; a second ohmic electrode having a ring shape surrounding the first ohmic electrodes, on edge regions of the first semiconductor layer; a second semiconductor layer interposed between the first ohmic electrodes and the first semiconductor layer; and a Schottky electrode part which covers the first ohmic electrodes on the central regions, and is spaced apart from the second ohmic electrode.
摘要翻译：本发明提供一种半导体器件，包括：基底; 设置在所述基底基板上的第一半导体层; 设置在第一半导体层的中心区域上的第一欧姆电极; 在所述第一半导体层的边缘区域上具有围绕所述第一欧姆电极的环形形状的第二欧姆电极; 插入在所述第一欧姆电极和所述第一半导体层之间的第二半导体层; 以及肖特基电极部件，其覆盖中心区域上的第一欧姆电极，并且与第二欧姆电极间隔开。

65. 发明授权

US08317826B2 Absorbable bulky multi-filament draw textured yarn, manufacturing method thereof and medical use using them 有权
标题翻译：可吸收体积大的多丝拉伸变形纱线，其制造方法和使用它们的医疗用途
公开(公告)号：US08317826B2
公开(公告)日：2012-11-27
申请号：US12587461
申请日：2009-10-07
申请人： Young Hwan Park , Jung Nam Im , Jae Hoon Ko , Kyoung Woo Lee , Yong Woo Cho
发明人： Young Hwan Park , Jung Nam Im , Jae Hoon Ko , Kyoung Woo Lee , Yong Woo Cho
IPC分类号： A61B17/04 , A61F13/00
CPC分类号： A61B17/06166 , A61B2017/00526 , A61B2017/00893 , A61L17/10 , A61L27/58 , D02G1/0286 , D02G1/20 , D02G3/448
摘要： An absorbable multifilament draw-textured yarn having a bulky structure, and a manufacturing method and medical use thereof The absorbable multifilament draw-textured yarn is obtained by draw-texturing a multifilament made of an absorbable polymer and has bulkiness and a superior soft touch, which are the characteristics of draw-textured yarns. As a result of partially imparting a bulkiness of 150-1000% to the multifilament draw-textured yarn, it is possible to culture cells in the bulky structure, and the multifilament draw-textured yarn is suitable for cell delivery or drug delivery.
摘要翻译：一种具有体积庞大结构的可吸收复丝拉伸加工纱线及其制造方法和医疗用途可吸收复丝拉伸加工纱线通过拉伸变形由可吸收聚合物制成的复丝而获得，并且具有蓬松性和优异的柔软触感，是拉伸变形纱线的特征。由于部分地赋予复丝拉伸变形纱线的150-1000％的膨松度，所以可以将细胞培养成体积大的结构，并且复丝拉伸加工纱线适合于细胞递送或药物递送。

66. 发明申请

US20120173600A1 APPARATUS AND METHOD FOR PERFORMING A COMPLEX NUMBER OPERATION USING A SINGLE INSTRUCTION MULTIPLE DATA (SIMD) ARCHITECTURE 有权
标题翻译：使用单一指令多数据（SIMD）架构执行复杂数字操作的装置和方法
公开(公告)号：US20120173600A1
公开(公告)日：2012-07-05
申请号：US13210455
申请日：2011-08-16
申请人： Young Hwan Park , Ho YANG
发明人： Young Hwan Park , Ho YANG
IPC分类号： G06F17/10
CPC分类号： G06F17/10 , G06F7/4806 , G06F7/4812 , G06F7/5443 , G06F9/30014 , G06F9/3887 , G06F2207/3828
摘要： Provided are an apparatus and method for performing a complex number operation using a Single Instruction Multiple Data (SIMD) architecture. A SIMD operation apparatus may perform, in parallel, a real part operation and an imaginary part operation of a plurality of complex numbers. The real part operation and the imaginary part operation may be performed sequentially, or in parallel.
摘要翻译：提供了一种使用单指令多数据（SIMD）架构来执行复数操作的装置和方法。 SIMD操作装置可以并行地执行多个复数的实部操作和虚部操作。可以顺序地或并行地执行实部操作和虚部操作。

67. 发明申请

US20120111318A1 APPARATUS FOR TRACKING AND CONDENSING SUNLIGHT OF WALL INSTALLATION TYPE 有权
标题翻译：用于跟踪和冷凝墙壁安装类型的装置
公开(公告)号：US20120111318A1
公开(公告)日：2012-05-10
申请号：US12940866
申请日：2010-11-05
申请人： Young Hwan Park
发明人： Young Hwan Park
IPC分类号： F24J2/38
CPC分类号： H02S30/20 , F24S30/425 , H02S20/26 , H02S20/32 , Y02B10/10 , Y02E10/47
摘要： Disclosed is an apparatus for tracking and condensing sunlight of a wall installation type which tracks the position of the Sun and efficiently condenses sunlight according to variations of an altitude or orbit of the sun by installing a sunlight condensing device for adjusting an angle onto a wall. An apparatus for tracking and condensing sunlight of a wall installation type, comprises: a wall means 100; a sunlight condensing means 200 for condensing sunlight by forming onto a side surface of the wall means 100; and an opening and closing means 300 for adjusting condensing angle by opening or closing an end of the sunlight condensing means 200.
摘要翻译：本发明公开了一种用于跟踪和集中墙壁安装类型的太阳光的装置，其通过安装用于将角度调节到墙上的太阳光聚光装置，跟踪太阳的位置并根据太阳的高度或轨道的变化有效地冷凝阳光。一种用于跟踪和冷凝墙壁安装类型的阳光的装置，包括：壁装置100; 阳光聚光装置200，用于通过在壁装置100的侧表面上形成而将太阳光聚光; 以及用于通过打开或关闭太阳光聚光装置200的端部来调节冷凝角的打开和关闭装置300。

68. 发明申请

US20120007049A1 NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：基于氮化物的半导体器件及其制造方法
公开(公告)号：US20120007049A1
公开(公告)日：2012-01-12
申请号：US12917812
申请日：2010-11-02
申请人： Woo Chul JEON , Ki Yeol Park , Jung Hee Lee , Young Hwan Park
发明人： Woo Chul JEON , Ki Yeol Park , Jung Hee Lee , Young Hwan Park
IPC分类号： H01L29/778 , H01L21/329 , H01L21/335 , H01L29/15
CPC分类号： H01L29/872 , B82Y10/00 , H01L27/0605 , H01L27/0629 , H01L27/095 , H01L29/10 , H01L29/1075 , H01L29/152 , H01L29/2003 , H01L29/7786 , H01L29/861
摘要： The present invention provides a nitride-based semiconductor device. The nitride-based semiconductor device includes: a base substrate having a diode structure; an epi-growth film disposed on the base substrate; and an electrode part disposed on the epi-growth film, wherein the diode structure includes: first-type semiconductor layers; and a second-type semiconductor layer which is disposed within the first-type semiconductor layers and has both sides covered by the first-type semiconductor layers.
摘要翻译：本发明提供一种氮化物类半导体器件。所述氮化物系半导体器件包括：具有二极管结构的基极基板; 设置在基底基板上的外延生长膜; 以及设置在外延生长膜上的电极部分，其中所述二极管结构包括：第一类型半导体层; 以及第二类型半导体层，其设置在所述第一类型半导体层内并且具有被所述第一类型半导体层覆盖的两侧。

69. 发明授权

US07985300B2 Dishwasher and assembly method thereof 有权
标题翻译：洗碗机及其组装方法
公开(公告)号：US07985300B2
公开(公告)日：2011-07-26
申请号：US11396452
申请日：2006-04-04
申请人： Tae Hee Lee , Yang Hoon Chung , Young Hwan Park , Si Moon Jeon
发明人： Tae Hee Lee , Yang Hoon Chung , Young Hwan Park , Si Moon Jeon
IPC分类号： B08B3/00
CPC分类号： A47L15/4225 , A47L15/4204
摘要： A dishwasher and assembly method thereof are disclosed, by which an overall height of the dishwasher is reduced, by which water can stably flow and by which assembly efficiency can be enhanced. The present invention includes a sump accommodating water therein and a wash pump assembled to the sump in a lateral direction to circulate the water within the sump.
摘要翻译：公开了一种洗碗机及其组装方法，通过该洗碗机及其组装方法，减少了洗碗机的整体高度，水可以稳定地流动并且可以提高组装效率。本发明包括其中容纳水的贮槽和在横向方向上组装到贮槽的洗涤泵，以使水在贮槽内循环。

70. 发明申请

US20110057286A1 Semiconductor device and method for manufacturing of the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20110057286A1
公开(公告)日：2011-03-10
申请号：US12654935
申请日：2010-01-08
申请人： Woo Chul Jeon , Jung Hee Lee , Young Hwan Park , Ki Yeol Park
发明人： Woo Chul Jeon , Jung Hee Lee , Young Hwan Park , Ki Yeol Park
IPC分类号： H01L29/872 , H01L21/329
CPC分类号： H01L29/861 , H01L29/417 , H01L29/66143 , H01L29/872
摘要： The present invention provides a semiconductor device including: a base substrate; a first semiconductor layer which is disposed on the base substrate and has a front surface and a rear surface opposite to the front surface; first ohmic electrodes disposed on the front surface of the first semiconductor layer; a second ohmic electrode disposed on the rear surface of the first semiconductor layer; a second semiconductor layer interposed between the first semiconductor layer and the first ohmic electrodes; and a Schottky electrode part which covers the first ohmic electrodes on the front surface of the first semiconductor layer.
摘要翻译：本发明提供一种半导体器件，包括：基底; 第一半导体层，其设置在所述基底基板上，并且具有与所述前表面相对的前表面和后表面; 设置在第一半导体层的前表面上的第一欧姆电极; 设置在所述第一半导体层的后表面上的第二欧姆电极; 插入在第一半导体层和第一欧姆电极之间的第二半导体层; 以及肖特基电极部分，其覆盖第一半导体层的前表面上的第一欧姆电极。

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