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61. 发明授权

US08938834B2 Fabric treating apparatus and method for controlling the same 有权
标题翻译：织物处理装置及其控制方法
公开(公告)号：US08938834B2
公开(公告)日：2015-01-27
申请号：US12656095
申请日：2010-01-15
申请人： Jong Seok Kim , Dong Won Kim , Sog Kie Hong , Hea Kyung Yoo
发明人： Jong Seok Kim , Dong Won Kim , Sog Kie Hong , Hea Kyung Yoo
IPC分类号： D06F33/02 , D06F58/12 , D06F73/02
CPC分类号： D06F58/12 , D06F73/02
摘要： The present invention relates to a fabric treating apparatus and method for controlling the same. A fabric treating apparatus according to the present invention includes a treating space within which fabrics are treated; a heating unit configured to supply heated air, or steam, or heated air and steam to the treating chamber; a motor to generate a rotational power; a device receiving the rotational power from the motor, the device configured to move a rack disposed within the treating space; and a control unit adapted to: control the motor according to a sensed electric current of the motor, and drive the motor to rotate at a speed defined by a target number of rotations per minute.
摘要翻译：本发明涉及一种织物处理装置及其控制方法。根据本发明的织物处理装置包括处理织物的处理空间; 加热单元，其构造成将加热的空气或蒸汽或加热的空气和蒸汽供应到处理室; 产生旋转动力的电动机; 接收来自所述电动机的旋转动力的装置，所述装置构造成移动设置在所述处理空间内的架子; 以及控制单元，其适于：根据所感测到的电动机的电流来控制所述电动机，并且以每分钟的目标转数所限定的速度驱动所述电动机。

62. 发明授权

US08514027B2 Method of multi-stage substrate etching and terahertz oscillator manufactured using the same method 有权
标题翻译：使用相同方法制造的多级衬底蚀刻方法和太赫兹振荡器
公开(公告)号：US08514027B2
公开(公告)日：2013-08-20
申请号：US13306146
申请日：2011-11-29
申请人： Chan Wook Baik , Jong Seok Kim , Seong Chan Jun , Sun Il Kim , Jong Min Kim , Chan Bong Jun , Sang Hun Lee
发明人： Chan Wook Baik , Jong Seok Kim , Seong Chan Jun , Sun Il Kim , Jong Min Kim , Chan Bong Jun , Sang Hun Lee
IPC分类号： H03B5/30 , B44C1/22
CPC分类号： H01P11/003 , Y10T428/24802
摘要： A method of multi-stage substrate etching and a terahertz oscillator manufactured by using the method are provided. The method comprises the steps of forming a first mask pattern on any one surface of a first substrate, forming a hole by etching the first substrate using the first mask pattern as an etching mask, bonding, to the first substrate, a second substrate having the same thickness as a depth to be etched, forming a second mask pattern on the second substrate bonded, forming a hole by etching the second substrate using the second mask pattern as an etching mask, and removing an oxide layer having the etching selectivity between the first substrate and the second substrate.
摘要翻译：提供了一种多级衬底蚀刻的方法和使用该方法制造的太赫兹振荡器。该方法包括以下步骤：在第一衬底的任何一个表面上形成第一掩模图案，通过使用第一掩模图案作为蚀刻掩模将第一衬底蚀刻形成孔，将第一衬底粘合到第一衬底上，与要蚀刻的深度相同的厚度，在第二衬底上形成第二掩模图案，通过使用第二掩模图案作为蚀刻掩模蚀刻第二衬底形成孔，并且去除在第一衬底之间具有蚀刻选择性的氧化物层基板和第二基板。

63. 发明授权

US08505340B2 Fabric treating apparatus 有权
标题翻译：织物处理装置
公开(公告)号：US08505340B2
公开(公告)日：2013-08-13
申请号：US12654492
申请日：2009-12-22
申请人： Sung Min Kim , Dong Won Kim , Jong Seok Kim , Dae Yun Park
发明人： Sung Min Kim , Dong Won Kim , Jong Seok Kim , Dae Yun Park
IPC分类号： B08B3/12
CPC分类号： D06F58/10 , D06F25/00
摘要： A present invention relates to a fabric treating apparatus including an inside cabinet which forms a treating chamber in which the fabrics treated, and a heating unit for supplying any one between hot wind and steam to the treating chamber, and a driving unit for generating driving power, and a driving unit frame is disposed the upper side of the inside cabinet for fixing the driving unit, and a sealing unit is pressed by the driving unit frame and penetrates the driving unit frame and the inside cabinet.
摘要翻译：一种织物处理装置技术领域本发明涉及一种织物处理装置，该织物处理装置包括：内部机壳，其形成处理织物的处理室;以及用于将热风和蒸汽之间的任何一个供应到处理室的加热单元和用于产生驱动力的驱动单元并且驱动单元框架设置在内部机壳的上侧，用于固定驱动单元，并且密封单元被驱动单元框架按压并穿过驱动单元框架和内部机柜。

64. 发明申请

US20130140550A1 ORGANIC LIGHT-EMITTING ELEMENT AND PRODUCTION METHOD THEREOF 有权
标题翻译：有机发光元件及其生产方法
公开(公告)号：US20130140550A1
公开(公告)日：2013-06-06
申请号：US13816468
申请日：2011-08-12
申请人： Yeon Keun Lee , Minsoo Kang , Jong Seok Kim
发明人： Yeon Keun Lee , Minsoo Kang , Jong Seok Kim
IPC分类号： H01L51/52 , H01L33/36
CPC分类号： H01L51/5203 , H01L33/36 , H01L51/0011 , H01L51/0021 , H01L51/5209 , H01L51/5225 , H01L51/56 , H01L2251/5361
摘要： The present invention relates to an organic light-emitting element and a production method thereof. Specifically, the present invention relates to an organic light-emitting element, which has excellent productivity during mass production thereof and may allow simplification of vapor deposition equipment, and the like, and a production method thereof.
摘要翻译：本发明涉及有机发光元件及其制造方法。具体地说，本发明涉及一种有机发光元件及其制造方法，该有机发光元件在其大规模生产中具有优异的生产率并且可以简化气相沉积设备等。

65. 发明申请

US20130069731A1 METHOD OF MULTI-STAGE SUBSTRATE ETCHING AND TERAHERTZ OSCILLATOR MANUFACTURED USING THE SAME METHOD 审中-公开
标题翻译：使用相同方法制造的多阶段衬底蚀刻和TERAHERTZ振荡器的方法
公开(公告)号：US20130069731A1
公开(公告)日：2013-03-21
申请号：US13606533
申请日：2012-09-07
申请人： Chan Wook Baik , Seog Woo Hong , Jong Seok Kim , Seong Chan Jun , Sun IL Kim
发明人： Chan Wook Baik , Seog Woo Hong , Jong Seok Kim , Seong Chan Jun , Sun IL Kim
IPC分类号： H03B28/00 , B44C1/22
CPC分类号： H03B28/00 , B44C1/227 , H01L23/66 , H01L2223/6627 , H01L2924/0002 , H01L2924/1903 , H01L2924/00
摘要： A method of multi-stage substrate etching, includes forming a first mask pattern on one surface of a first substrate; forming a hole by etching the first substrate using the first mask pattern as an etching mask; forming a second mask pattern on one surface of a second substrate; forming a hole by etching the second substrate to a predetermined depth using the second mask pattern as an etching mask; bonding the first and second substrates together such that an etched surface of the first substrate faces an etched surface of the second substrate; forming a third mask pattern on the second substrate; and forming a hole passing through the second substrate by etching the second substrate using the third mask pattern as an etching mask, whereby it is prevented the occurrence of a radius of curvature in the bottom surface and the overhang structure occurring on a step surface.
摘要翻译：一种多级衬底蚀刻的方法，包括在第一衬底的一个表面上形成第一掩模图案; 通过使用第一掩模图案蚀刻第一衬底作为蚀刻掩模来形成孔; 在第二基板的一个表面上形成第二掩模图案; 通过使用第二掩模图案作为蚀刻掩模，将第二基板蚀刻到预定深度来形成孔; 将第一和第二基板接合在一起，使得第一基板的蚀刻表面面对第二基板的蚀刻表面; 在所述第二基板上形成第三掩模图案; 并且通过使用第三掩模图案作为蚀刻掩模蚀刻第二基板来形成通过第二基板的孔，由此防止在台面上出现底面和突出结构中的曲率半径。

66. 发明授权

US08296888B2 Laundry treating machine and control method of the same 有权
标题翻译：洗衣机和控制方法相同
公开(公告)号：US08296888B2
公开(公告)日：2012-10-30
申请号：US12385067
申请日：2009-03-30
申请人： Hea Kyung Yoo , Sog Kie Hong , Dong Won Kim , Jong Seok Kim , Dae Yun Park
发明人： Hea Kyung Yoo , Sog Kie Hong , Dong Won Kim , Jong Seok Kim , Dae Yun Park
IPC分类号： D06B19/00 , F26B19/00 , F26B7/00 , F26B3/00
CPC分类号： D06F73/02 , D06F35/00 , D06F58/10
摘要： The present disclosure generally relates to a cloth treating apparatus, such as a laundry treating machine, and methods of control and operation which sanitize the machine. The laundry treating machine can include an accommodating space which supplies air and moisture in order to remove unpleasant odors, wrinkles, or dampness from the laundry. The laundry treating machine may further include a circulation duct to circulate, dehumidify, or heat air inside the accommodating space. Operation of the laundry treating machine can use steam-sanitizing to remove odors, moisture, bacteria from the accommodating space and circulation duct. Steam-sanitizing can be performed based on a user's selection or the occurrence of a condition, such as unloading of laundry from the accommodating space after treatment.
摘要翻译：本公开总体涉及诸如衣物处理机的布处理装置以及对机器进行消毒的控制和操作的方法。洗衣处理机可以包括供应空气和水分的容纳空间，以便从衣物中除去不愉快的气味，皱纹或湿气。洗衣处理机还可以包括循环管道，以在容纳空间内循环，除湿或加热空气。洗衣处理机的操作可以使用蒸汽消毒从容纳空间和循环管道中除去气味，水分，细菌。蒸汽消毒可以基于用户的选择或状况的发生进行，例如处理后从容纳空间卸载衣物。

67. 发明授权

US08293124B2 Method of multi-stage substrate etching and terahertz oscillator manufactured using the same method 有权
标题翻译：使用相同方法制造的多级衬底蚀刻方法和太赫兹振荡器
公开(公告)号：US08293124B2
公开(公告)日：2012-10-23
申请号：US12073311
申请日：2008-03-04
申请人： Chan Wook Baik , Seog Woo Hong , Jong Seok Kim , Seong Chan Jun , Sun Il Kim
发明人： Chan Wook Baik , Seog Woo Hong , Jong Seok Kim , Seong Chan Jun , Sun Il Kim
IPC分类号： G03F7/20 , B44C1/22
CPC分类号： H03B28/00 , B44C1/227 , H01L23/66 , H01L2223/6627 , H01L2924/0002 , H01L2924/1903 , H01L2924/00
摘要： A method of multi-stage substrate etching is provided. The method comprises the steps of: forming a first mask pattern on one surface of a first substrate; forming a hole by etching the first substrate using the first mask pattern as an etching mask; forming a second mask pattern on one surface of a second substrate; forming a hole by etching the second substrate to a predetermined depth using the second mask pattern as an etching mask; bonding the first and second substrates together such that an etched surface of the first substrate faces an etched surface of the second substrate; forming a third mask pattern on the second substrate; and forming a hole passing through the second substrate by etching the second substrate using the third mask pattern as an etching mask, whereby it is prevented the occurrence of a radius of curvature in the bottom surface and the overhang structure occurring on a step surface, so that etching quality is improved, a precise bonding between the substrates is obtained using the alignment key positioned on each substrate, and a multi-layer process is carried out.
摘要翻译：提供了一种多级衬底蚀刻的方法。该方法包括以下步骤：在第一衬底的一个表面上形成第一掩模图案; 通过使用第一掩模图案蚀刻第一衬底作为蚀刻掩模来形成孔; 在第二基板的一个表面上形成第二掩模图案; 通过使用第二掩模图案作为蚀刻掩模将第二基板蚀刻到预定深度来形成孔; 将第一和第二基板接合在一起，使得第一基板的蚀刻表面面对第二基板的蚀刻表面; 在所述第二基板上形成第三掩模图案; 并且通过使用第三掩模图案作为蚀刻掩模蚀刻第二基板来形成通过第二基板的孔，从而防止在台面上出现底面和突出结构中的曲率半径的出现，因此改善了蚀刻质量，使用位于每个衬底上的对准键来获得衬底之间的精确结合，并且进行多层工艺。

68. 发明授权

US08092702B2 Method of multi-stage substrate etching and terahertz oscillator manufactured using the same method 有权
标题翻译：使用相同方法制造的多级衬底蚀刻方法和太赫兹振荡器
公开(公告)号：US08092702B2
公开(公告)日：2012-01-10
申请号：US12025186
申请日：2008-02-04
申请人： Chan Wook Baik , Jong Seok Kim , Seong Chan Jun , Sun Il Kim , Jong Min Kim , Chan Bong Jun , Sang Hun Lee
发明人： Chan Wook Baik , Jong Seok Kim , Seong Chan Jun , Sun Il Kim , Jong Min Kim , Chan Bong Jun , Sang Hun Lee
IPC分类号： B44C1/22
CPC分类号： H01P11/003 , Y10T428/24802
摘要： A method of multi-stage substrate etching and a terahertz oscillator manufactured by using the method are provided. The method comprises the steps of forming a first mask pattern on any one surface of a first substrate, forming a hole by etching the first substrate using the first mask pattern as an etching mask, bonding, to the first substrate, a second substrate having the same thickness as a depth to be etched, forming a second mask pattern on the second substrate bonded, forming a hole by etching the second substrate using the second mask pattern as an etching mask, and removing an oxide layer having the etching selectivity between the first substrate and the second substrate, whereby the etched bottom is made uniformly even in a deep step, the edge curvature is minimized, and a T-shape is prevented from being formed on the etched wall face to thereby improve the etching quality. Further, the etching depth is previously controlled by lapping or polishing, the upper and lower substrates are precisely boned to each other using the alignment key, and a multi-layer processing is possibly performed thereto, so that the precision and the uniformity in structure of the oscillator or amplifier is obtained.
摘要翻译：提供了一种多级衬底蚀刻的方法和使用该方法制造的太赫兹振荡器。该方法包括以下步骤：在第一衬底的任何一个表面上形成第一掩模图案，通过使用第一掩模图案作为蚀刻掩模将第一衬底蚀刻形成孔，将第一衬底粘合到第一衬底上，与要蚀刻的深度相同的厚度，在第二衬底上形成第二掩模图案，通过使用第二掩模图案作为蚀刻掩模蚀刻第二衬底形成孔，并且去除在第一衬底之间具有蚀刻选择性的氧化物层衬底和第二衬底，由此蚀刻的底部均匀地均匀地制成，即使在深度阶段，边缘曲率最小化，并且防止在蚀刻的壁面上形成T形，从而提高蚀刻质量。此外，通过研磨或研磨预先控制蚀刻深度，使用对准键将上下基板彼此精确地相互结合，并且可以对其进行多层处理，使得精度和结构的均匀性获得振荡器或放大器。

69. 发明申请

US20110016930A1 CLOTHES TREATING APPARATUS 有权
标题翻译：衣服处理设备
公开(公告)号：US20110016930A1
公开(公告)日：2011-01-27
申请号：US12733069
申请日：2008-08-04
申请人： Jung Wook Moon , Dae Yun Park , Sog Kie Hong , Jong Seok Kim , Seung Gyu Ryu , Hye Yong Park , Chang Gyu Choi
发明人： Jung Wook Moon , Dae Yun Park , Sog Kie Hong , Jong Seok Kim , Seung Gyu Ryu , Hye Yong Park , Chang Gyu Choi
IPC分类号： D06F37/00
CPC分类号： D06F58/10 , D06F58/203
摘要： Disclosed is a clothes treating apparatus, which treats clothes into a more wearable condition. The clothes treating apparatus includes a cabinet; an accommodating space formed in the cabinet and accommodating clothes; a moisture supplying device generating moisture to be supplied into the accommodating space; and a supply unit discharging the moisture generated by the moisture supplying device into the accommodating space and installed on a bottom of the accommodating space.
摘要翻译：公开了一种衣服处理装置，其将衣物处理成更可穿戴的状态。衣物处理装置包括：容纳空间形成在橱柜中并容纳衣物; 水分供应装置，其产生要供应到容纳空间中的湿气; 以及供给单元，其将由所述供水装置产生的水分排放到所述容纳空间中并且安装在所述容纳空间的底部。

70. 发明申请

US20110005097A1 CLOTHES TREATING APPARATUS AND CONTROLLING METHOD THEREOF 审中-公开
标题翻译：衣服处理装置及其控制方法
公开(公告)号：US20110005097A1
公开(公告)日：2011-01-13
申请号：US12309887
申请日：2008-08-04
申请人： Jung Wook Moon , Dae Yun Park , Sog Kie Hong , Jong Seok Kim , Seung Gyu Ryu , Hye Yong Park , Chang Gyu Choi , Dong Won Kim
发明人： Jung Wook Moon , Dae Yun Park , Sog Kie Hong , Jong Seok Kim , Seung Gyu Ryu , Hye Yong Park , Chang Gyu Choi , Dong Won Kim
IPC分类号： F26B3/00 , F26B25/06 , F26B21/06
CPC分类号： D06F58/10 , D06F39/008 , D06F58/203 , D06F58/206 , D06F58/28 , D06F2058/2829 , D06F2058/2864 , D06F2058/287
摘要： A clothes-treating apparatus and a controlling method thereof are disclosed. According to a controlling method of a clothes-treating apparatus, a predetermined operational condition of a compressor included in a heat pump to supply dry air to clothes placed therein may be maintained normally. Furthermore, a cooling fan provided in a mechanism compartment is operated only if an internal environment of the mechanism compartment is out of the normal operational condition of the compressor. As a result, noise created from operation of the cooling fan may be reduced and dust that happens to be sucked into the mechanism compartment when external air is drawn may be minimized.
摘要翻译：公开了一种衣物处理装置及其控制方法。根据衣物处理装置的控制方法，包括在热泵中的用于向其中放置的衣物供应干燥空气的压缩机的预定操作条件可以保持正常。此外，只有当机构隔室的内部环境处于压缩机的正常工作状态时，才能操作设置在机构室中的冷却风扇。结果，可以减少由冷却风扇的操作产生的噪音，并且当外部空气被抽出时恰好被吸入机构室的尘埃可能被最小化。

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