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61. 发明授权

US07102117B2 Active pixel sensor cell with integrating varactor and method for using such cell 有权
标题翻译：具有积分变容二极管的有源像素传感器单元和使用这种单元的方法
公开(公告)号：US07102117B2
公开(公告)日：2006-09-05
申请号：US10863058
申请日：2004-06-08
申请人： Peter J. Hopper , Philipp Lindorfer , Mark W. Poulter , Yuri Mirgorodski
发明人： Peter J. Hopper , Philipp Lindorfer , Mark W. Poulter , Yuri Mirgorodski
IPC分类号： H01L27/00
CPC分类号： H01L27/14609 , H04N5/35572 , H04N5/361 , H04N5/37452
摘要： An active pixel sensor cell including at least one photodiode and reset circuitry and an integrating varactor coupled to the photodiode, a method for reading out such a cell, and an image sensor including an array of such cells. The photodiode can be exposed to photons during an exposure interval to accumulate a sequence of subexposure charges at a first node of the photodiode. Each of the subexposure charges accumulates at the first node during a different subexposure interval of the exposure interval. The photodiode is reset during each of a sequence of reset intervals, each reset interval occurring before a different one of the subexposure intervals. An output signal indicative of an exposure charge accumulated at the storage node during the exposure interval can be asserted from the cell, where the exposure charge is indicative of a sum of all the subexposure charges.
摘要翻译：包括至少一个光电二极管和复位电路的有源像素传感器单元和耦合到光电二极管的积分变容二极管，用于读出这样的单元的方法以及包括这种单元阵列的图像传感器。在曝光间隔期间，可以将光电二极管暴露于光子，以在光电二极管的第一节点处累积次曝光电荷序列。在曝光间隔的不同子曝光间隔期间，每个次曝光电荷在第一节点处累积。在每个复位间隔的每一个期间复位光电二极管，每个复位间隔发生在不同的次曝光间隔之前。指示在曝光间隔期间在存储节点处累积的曝光电荷的输出信号可以从单元断言，其中曝光电荷指示所有次曝光电荷的总和。

62. 发明授权

US06958194B1 Imager with improved sensitivity 失效
标题翻译：成像仪灵敏度提高
公开(公告)号：US06958194B1
公开(公告)日：2005-10-25
申请号：US10689779
申请日：2003-10-21
申请人： Peter J. Hopper , Philipp Lindorfer , Michael Mian , Robert Drury
发明人： Peter J. Hopper , Philipp Lindorfer , Michael Mian , Robert Drury
IPC分类号： B32B9/00 , H01L27/146 , H01L31/00
CPC分类号： H01L27/14647 , Y10T428/12528 , Y10T428/12674
摘要： An imaging cell reduces recombination losses and increases sensitivity by forming a low resistance lateral path with a silicon germanium layer of a conductivity type that is sandwiched between silicon layers of the same conductivity type. The silicon germanium layer also provides a quantum well from which photo-generated electrons find it difficult to escape, thereby providing a barrier that reduces cross-talk.
摘要翻译：成像单元通过用夹在相同导电类型的硅层之间的导电类型的硅锗层形成低电阻横向路径来降低复合损耗并增加灵敏度。硅锗层还提供了一个量子阱，光电子发现它难以逃逸，从而提供了减少串扰的屏障。

63. 发明申请

US20050269482A1 Active pixel sensor cell with integrating varactor and method for using such cell 有权
标题翻译：具有积分变容二极管的有源像素传感器单元和使用这种单元的方法
公开(公告)号：US20050269482A1
公开(公告)日：2005-12-08
申请号：US10863058
申请日：2004-06-08
申请人： Peter Hopper , Philipp Lindorfer , Mark Poulter , Yuri Mirgorodski
发明人： Peter Hopper , Philipp Lindorfer , Mark Poulter , Yuri Mirgorodski
IPC分类号： H01L27/146 , H04N5/353 , H04N5/361 , H04N5/3745 , H01L27/00
CPC分类号： H01L27/14609 , H04N5/35572 , H04N5/361 , H04N5/37452
摘要： An active pixel sensor cell including at least one photodiode and reset circuitry and an integrating varactor coupled to the photodiode, a method for reading out such a cell, and an image sensor including an array of such cells. The photodiode can be exposed to photons during an exposure interval to accumulate a sequence of subexposure charges at a first node of the photodiode. Each of the subexposure charges accumulates at the first node during a different subexposure interval of the exposure interval. The photodiode is reset during each of a sequence of reset intervals, each reset interval occurring before a different one of the subexposure intervals. An output signal indicative of an exposure charge accumulated at the storage node during the exposure interval can be asserted from the cell, where the exposure charge is indicative of a sum of all the subexposure charges.
摘要翻译：包括至少一个光电二极管和复位电路的有源像素传感器单元和耦合到光电二极管的积分变容二极管，用于读出这样的单元的方法以及包括这种单元阵列的图像传感器。在曝光间隔期间，可以将光电二极管暴露于光子，以在光电二极管的第一节点处累积次曝光电荷序列。在曝光间隔的不同子曝光间隔期间，每个次曝光电荷在第一节点处累积。在每个复位间隔的每一个期间复位光电二极管，每个复位间隔发生在不同的次曝光间隔之前。指示在曝光间隔期间在存储节点处累积的曝光电荷的输出信号可以从单元断言，其中曝光电荷指示所有次曝光电荷的总和。

64. 发明授权

US07595243B1 Fabrication of semiconductor structure having N-channel channel-junction field-effect transistor 有权
标题翻译：具有N沟道沟道结场效应晶体管的半导体结构的制造
公开(公告)号：US07595243B1
公开(公告)日：2009-09-29
申请号：US11495225
申请日：2006-07-28
申请人： Constantin Bulucea , Philipp Lindorfer
发明人： Constantin Bulucea , Philipp Lindorfer
IPC分类号： H01L21/8236
CPC分类号： H01L21/823807 , H01L21/26586 , H01L27/0883 , H01L27/0928 , H01L29/1041 , H01L29/105 , H01L29/665 , H01L29/7833
摘要： A semiconductor technology combines a normally off n-channel channel-junction insulated-gate field-effect transistor (“IGFET”) (104) and an n-channel surface-channel IGFET (100 or 160) to reduce low-frequency 1/f noise. The channel-junction IGFET is normally fabricated to be of materially greater gate dielectric thickness than the surface-channel IGFET so as to operate across a greater voltage range than the surface-channel IGFET. A p-channel surface-channel IGFET (102 or 162), which is typically fabricated to be of approximately the same gate-dielectric thickness as the n-channel surface-channel IGFET, is preferably combined with the two n-channel IGFETs to produce a complementary-IGFET structure. A further p-channel IGFET (106, 180, 184, or 192), which is typically fabricated to be of approximately the same gate dielectric thickness as the n-channel channel-junction IGFET, is also preferably included. The further p-channel IGFET can be a surface-channel or channel-junction device.
摘要翻译：半导体技术结合了正常n沟道沟道结绝缘栅场效应晶体管（“IGFET”）（104）和n沟道表面沟道IGFET（100或160），以降低低频1 / f 噪声。沟道结IGFET通常被制造为具有比表面沟道IGFET大得多的栅介质厚度，以便在比表面沟道IGFET更大的电压范围内工作。典型地制造为与n沟道表面沟道IGFET大致相同的栅介质厚度的p沟道表面沟道IGFET（102或162）优选地与两个n沟道IGFET组合以产生互补IGFET结构。还优选包括通常被制造为具有与n沟道沟道结IGFET大致相同的栅介质厚度的另外的p沟道IGFET（106,180,184或192）。另外的p沟道IGFET可以是表面沟道或沟道结器件。

65. 发明申请

US20060266925A1 Active pixel sensor cell with integrating varactor and method for using such cell 有权
公开(公告)号：US20060266925A1
公开(公告)日：2006-11-30
申请号：US11496951
申请日：2006-08-01
申请人： Peter Hopper , Philipp Lindorfer , Mark Poulter , Yuri Mirgorodski
发明人： Peter Hopper , Philipp Lindorfer , Mark Poulter , Yuri Mirgorodski
IPC分类号： H01L27/00
CPC分类号： H01L27/14609 , H04N5/35572 , H04N5/361 , H04N5/37452
摘要： An active pixel sensor cell including at least one photodiode and reset circuitry and an integrating varactor coupled to the photodiode, a method for reading out such a cell, and an image sensor including an array of such cells. The photodiode can be exposed to photons during an exposure interval to accumulate a sequence of subexposure charges at a first node of the photodiode. Each of the subexposure charges accumulates at the first node during a different subexposure interval of the exposure interval. The photodiode is reset during each of a sequence of reset intervals, each reset interval occurring before a different one of the subexposure intervals. An output signal indicative of an exposure charge accumulated at the storage node during the exposure interval can be asserted from the cell, where the exposure charge is indicative of a sum of all the subexposure charges.

66. 发明授权

US06720592B1 Apparatus for high sensitivity, low lag, high voltage swing in a pixel cell with an electronic shutter 有权
标题翻译：用于具有电子快门的像素单元中的高灵敏度，低滞后，高电压摆幅的装置
公开(公告)号：US06720592B1
公开(公告)日：2004-04-13
申请号：US09895803
申请日：2001-06-29
申请人： Willem Johannes Kindt , Philipp Lindorfer
发明人： Willem Johannes Kindt , Philipp Lindorfer
IPC分类号： H01L27148
CPC分类号： H01L27/14601
摘要： The present invention is directed to a photogate based pixel cell with an electronic shutter and which provides relatively low lag and high sensitivity for sensing infrared light reflected from objects. Additionally, this invention eliminates the need for a transfer gate in the pixel cell. In one embodiment, the reset and shutter transistors are implemented with PMOS transistors so that the pixel cell can have an increased dynamic range and a relatively high voltage swing. In another embodiment, the actual size of each pixel cell can be further reduced when the reset gate and the electronic shutter are implemented with NMOS transistors. Also, when a P− well is not disposed beneath the photogate, the ability of the pixel cell to sense infrared light is improved. Correlated double sampling can be used to improve the accuracy of the signal read out from the pixel cell.
摘要翻译：本发明涉及一种具有电子快门的基于光栅的像素单元，其提供用于感测从物体反射的红外光的相对较低的滞后和高灵敏度。另外，本发明消除了对像素单元中的传输门的需要。在一个实施例中，复位和快门晶体管由PMOS晶体管实现，使得像素单元可以具有增加的动态范围和相对高的电压摆幅。在另一个实施例中，当复位门和电子快门用NMOS晶体管实现时，可以进一步减小每个像素单元的实际尺寸。此外，当P-阱不设置在光栅下方时，像素单元感测红外光的能力得到改善。可以使用相关的双重采样来提高从像素单元读出的信号的精度。

67. 发明授权

US06534759B1 Vertical photodetector with improved photocarrier separation and low capacitance 有权
标题翻译：具有改进的光载流子分离和低电容的垂直光电探测器
公开(公告)号：US06534759B1
公开(公告)日：2003-03-18
申请号：US09950121
申请日：2001-09-10
申请人： Waclaw C. Koscielniak , Philipp Lindorfer
发明人： Waclaw C. Koscielniak , Philipp Lindorfer
IPC分类号： H01L3100
CPC分类号： H01L27/14645 , H01L31/101 , H01L31/103 , H01L31/18
摘要： A vertical photodetector for detecting different wavelengths of light. The structure provides doped regions, which are separated by barrier regions. The doped regions detect photons corresponding to different wavelengths of light. Specifically, by detecting the amount of electrical charge collected by diodes positioned in the different doped regions, different wavelengths of light can be detected. The barrier regions inhibit the flow of electrical charges from one doped region into another doped region. The area of the doped regions can be increased, without increasing the capacitance of the diodes which are used to detect the electrical charges generated by light incident of the vertical photodetector.
摘要翻译：用于检测不同波长的光的垂直光电探测器。该结构提供掺杂区域，其被屏障区域分隔开。掺杂区域检测对应于不同波长的光的光子。具体地，通过检测位于不同掺杂区域中的二极管收集的电荷量，可以检测不同波长的光。阻挡区域阻止电荷从一个掺杂区域流入另一个掺杂区域。可以增加掺杂区域的面积，而不增加用于检测由垂直光电检测器入射的光产生的电荷的二极管的电容。

68. 发明授权

US07176530B1 Configuration and fabrication of semiconductor structure having n-channel channel-junction field-effect transistor 有权
标题翻译：具有n沟道沟道结场效应晶体管的半导体结构
公开(公告)号：US07176530B1
公开(公告)日：2007-02-13
申请号：US10803203
申请日：2004-03-17
申请人： Constantin Bulucea , Philipp Lindorfer
发明人： Constantin Bulucea , Philipp Lindorfer
IPC分类号： H01L29/76
CPC分类号： H01L21/823807 , H01L21/26586 , H01L27/0883 , H01L27/0928 , H01L29/1041 , H01L29/105 , H01L29/665 , H01L29/7833
摘要： A semiconductor technology combines a normally off n-channel channel-junction insulated-gate field-effect transistor (“IGFET”) (104) and an n-channel surface-channel IGFET (100 or 160) to reduce low-frequency 1/f noise. The channel-junction IGFET is normally of materially greater gate dielectric thickness than the surface-channel IGFET so as to operate across a greater voltage range than the surface-channel IGFET. Alternatively or additionally, the channel-junction IGFET may conduct current through a field-induced surface channel. A p-channel surface-channel IGFET (102 or 162), which is typically of approximately the same gate-dielectric thickness as the n-channel surface-channel IGFET, is preferably combined with the two n-channel IGFETs to produce a complementary-IGFET structure. A further p-channel IGFET (106, 180, 184, or 192), which is typically of approximately the same gate dielectric thickness as the n-channel channel-junction IGFET, is also preferably included. The further p-channel IGFET can be a surface-channel or channel-junction device.
摘要翻译：半导体技术结合了正常n沟道沟道结绝缘栅场效应晶体管（“IGFET”）（104）和n沟道表面沟道IGFET（100或160），以降低低频1 / f 噪声。沟道结IGFET通常具有比表面沟道IGFET大得多的栅介质厚度，以便在比表面沟道IGFET更大的电压范围内工作。或者或另外，通道结IGFET可以传导电流通过场诱导的表面通道。通常与n沟道表面沟道IGFET大致相同的栅介质厚度的p沟道表面沟道IGFET（102或162）优选与两个n沟道IGFET组合， IGFET结构。还优选包括通常具有与n沟道沟道结IGFET大致相同的栅介质厚度的另外的p沟道IGFET（106,180,184或192）。另外的p沟道IGFET可以是表面沟道或沟道结器件。

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