专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明授权

US4841534A Buried type semiconductor laser device 失效
标题翻译：埋式半导体激光器件
公开(公告)号：US4841534A
公开(公告)日：1989-06-20
申请号：US229212
申请日：1988-08-05
申请人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Hiroaki Kudo , Sadayoshi Matsui
发明人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Hiroaki Kudo , Sadayoshi Matsui
IPC分类号： H01S5/00 , H01S5/223 , H01S5/227 , H01S5/24
CPC分类号： H01S5/24 , H01S5/227 , H01S5/0035 , H01S5/2235 , H01S5/2237 , H01S5/2275
摘要： A buried type semiconductor laser device comprising a multi-layered epitaxial growth crystal including a striped laser-oscillation operating area on a semiconductor substrate, wherein said laser-oscillation operating area contains a buffer layer having the same polarity as said substrate, an active layer and a cladding layer having a polarity different from that of said substrate, said laser-oscillation operating area being sandwiched between one part of the burying layer and another part of the burying layer, which are disposed on said substrate and which have a polarity different from that of said substrate, through said substrate or a diffusion region having an impurity with the same polarity as said substrate so as to electrically isolate said burying layer from said cladding layer, thereby maintaining ineffective current flowing from said cladding layer to said burying layer at a low level even when current injected into said device is increased.

62. 发明授权

US4839900A Buried type semiconductor laser device 失效
标题翻译：埋式半导体激光器件
公开(公告)号：US4839900A
公开(公告)日：1989-06-13
申请号：US897337
申请日：1986-08-15
申请人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Hiroaki Kudo , Sadayoshi Matsui
发明人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Hiroaki Kudo , Sadayoshi Matsui
IPC分类号： H01S5/00 , H01S5/223 , H01S5/227 , H01S5/24
CPC分类号： H01S5/24 , H01S5/227 , H01S5/0035 , H01S5/2235 , H01S5/2237 , H01S5/2275
摘要： A buried type semiconductor laser device comprising a multi-layered epitaxial growth crystal including a striped laser-oscillation operating area on a semiconductor substrate, wherein said laser-oscillation operating area contains a buffer layer having the same polarity as said substrate, an active layer and a cladding layer having a polarity different from that of said substrate, said laser-oscillation operating area being sandwiched between one part of the burying layer and another part of the burying layer, which are disposed on said substrate and which have a polarity different from that of said substrate, through said substrate or a diffusion region having an impurity with the same polarity as said substrate so as to electrically isolate said burying layer from said cladding layer, thereby maintaining ineffective current flowing from said cladding layer to said burying layer at a low level even when current injected into said device is increased.
摘要翻译：一种埋式半导体激光器件，包括在半导体衬底上包括条纹激光振荡操作区的多层外延生长晶体，其中所述激光振荡操作区域包含具有与所述衬底相同极性的缓冲层，活性层和具有与所述基板的极性不同的包覆层，所述激光振荡操作区域被夹在所述基板上并且具有与所述基板不同的极性不同的所述掩埋层的一部分与所述掩埋层的另一部分之间的所述衬底，通过所述衬底或具有与所述衬底具有相同极性的杂质的扩散区域，以将所述掩埋层与所述包层电隔离，从而保持无效电流从低覆盖层流到所述掩埋层即使当注入到所述装置中的电流增加时。

63. 发明授权

US4819240A Light modulator 失效
标题翻译：光调制器
公开(公告)号：US4819240A
公开(公告)日：1989-04-04
申请号：US180637
申请日：1988-04-07
申请人： Haruhisa Takiguchi , Shinji Kaneiwa , Toshihiko Yoshida , Sadayoshi Matsui
发明人： Haruhisa Takiguchi , Shinji Kaneiwa , Toshihiko Yoshida , Sadayoshi Matsui
IPC分类号： H04B10/61 , G11B7/1263 , G11B7/1267 , H01S5/06 , H01S5/062 , H01S5/065 , H04B10/00 , H04B10/07 , H04B10/2507 , H04B10/516 , H01S3/10
CPC分类号： H01S5/06213 , H01S5/06223 , H01S5/0658
摘要： A light modulator for modulating data signal to high frequency light signal includes a semiconductor laser diode having an input for receiving the data signal and an output for producing a laser beam, a light detector for receiving the laser beam and producing an electric signal representing the laser beam, and an electric passage between the light detector and the input of the semiconductor laser diode so as to define a positive feedback circuit for feeding the output of the semiconductor laser diode to the input of the same, whereby an oscillation at a resonance frequency is effected in the semiconductor laser diode to generate a light modulated high frequency laser signal from the semiconductor laser diode.
摘要翻译：用于将数据信号调制为高频光信号的光调制器包括具有用于接收数据信号的输入端和用于产生激光束的输出的半导体激光二极管，用于接收激光束的光检测器，并产生表示激光的电信号光束和光检测器与半导体激光二极管的输入之间的电通路，以便限定用于将半导体激光二极管的输出馈送到其输入端的正反馈电路，由此谐振频率的振荡为在半导体激光二极管中产生来自半导体激光二极管的光调制高频激光信号。

64. 发明授权

US4806778A Micro-displacement measuring apparatus using a semiconductor laser 失效
标题翻译：使用半导体激光器的微位移测量装置
公开(公告)号：US4806778A
公开(公告)日：1989-02-21
申请号：US832885
申请日：1986-02-26
申请人： Osamu Yamamoto , Hiroshi Hayashi , Sadayoshi Matsui , Haruhisa Takiguchi , Nobuyuki Miyauchi
发明人： Osamu Yamamoto , Hiroshi Hayashi , Sadayoshi Matsui , Haruhisa Takiguchi , Nobuyuki Miyauchi
IPC分类号： G01D5/30 , G01B9/02 , G01B11/00 , G01D5/26 , H01S3/08
CPC分类号： G01D5/26
摘要： A micro-displacement measuring apparatus using a semiconductor laser, comprises a compound resonator system containing the semiconductor laser, and a light detector receiving a light from said semiconductor laser. The compound resonator system is constructed such that a light from the semiconductor laser irradiates an object to be measured and the reflected light therefrom returns to the semiconductor laser, wherein the relationship between the reflectivity R.sub.f at the front facet of the semiconductor laser from which a laser light irradiates the object, and the reflectivity Rr at the rear facet of the semiconductor laser which is opposite the front facet is as follows: 0.1
摘要翻译：使用半导体激光器的微位移测量装置包括包含半导体激光器的复合谐振器系统和接收来自所述半导体激光器的光的光检测器。复合谐振器系统被构造成使得来自半导体激光器的光照射被测量物体并且其反射光返回到半导体激光器，其中激光器的半导体激光器的前面的反射率Rf之间的关系光照射物体，与前面相反的半导体激光器的后面的反射率Rr如下：0.1

65. 发明授权

US4799225A Semiconductor laser array device 失效
标题翻译：半导体激光阵列器件
公开(公告)号：US4799225A
公开(公告)日：1989-01-17
申请号：US104865
申请日：1987-10-05
申请人： Mototaka Taneya , Sadayoshi Matsui , Mitsuhiro Matsumoto
发明人： Mototaka Taneya , Sadayoshi Matsui , Mitsuhiro Matsumoto
IPC分类号： H01S5/00 , H01S5/042 , H01S5/40 , H01S3/19
CPC分类号： H01S5/4068
摘要： A semiconductor laser array device with a waveguide structure comprising a first array portion which is composed of a plurality of parallel waveguides; a second array portion which is composed of a plurality of parallel waveguides; a third array portion which is composed of a plurality of symmetrically branching waveguides that optically connect the ends of the parallel waveguides of the first array portion; and a fourth array portion which is composed of a plurality of symmetrically branching waveguides that are optically connected to the other ends of the parallel waveguides of the second array portion, the ends of said symmetrically branching waveguides of the fourth array portion meeting one laser-emitting face of said laser array device at which said symmetrically branching waveguides begin to be optically combined with the adjacent symmetrically branching waveguides.
摘要翻译：一种具有波导结构的半导体激光阵列器件，包括由多个平行波导构成的第一阵列部分; 由多个平行波导构成的第二阵列部分; 第三阵列部分，其由多个对称分支波导构成，所述多个对称分支波导光学连接所述第一阵列部分的平行波导的端部; 以及第四阵列部分，其由多个对称分支波导组成，所述多个对称分支波导光学连接到所述第二阵列部分的平行波导的另一端，所述第四阵列部分的所述对称分支波导的端部满足一个激光发射所述激光阵列器件的所述对称分支波导开始与相邻对称分支波导光学组合的面。

66. 发明授权

US4772082A Semiconductor laser array device 失效
标题翻译：半导体激光阵列器件
公开(公告)号：US4772082A
公开(公告)日：1988-09-20
申请号：US876223
申请日：1986-06-19
申请人： Sadayoshi Matsui , Mototaka Taneya , Mitsuhiro Matsumoto
发明人： Sadayoshi Matsui , Mototaka Taneya , Mitsuhiro Matsumoto
IPC分类号： H01S5/00 , H01S5/028 , H01S5/40 , G02B6/10 , H01S3/19
CPC分类号： H01S5/028 , H01S5/4068
摘要： A semiconductor laser array device comprising a plurality of index-guided active waveguides optically and smoothly coupled with each other in a parallel manner, wherein the reflective index of the center area of at least one facet of said semiconductor laser array device corresponding to said active waveguides is higher than that of the other area of said facet corresponding to said active waveguides.
摘要翻译：一种半导体激光器阵列器件，包括以平行方式彼此光学和平滑地耦合的多个折射率导向的有源波导，其中所述半导体激光器阵列器件的至少一个刻面的对应于所述有源波导的中心区域的反射率高于对应于所述有源波导的所述面的其他区域的面积。

67. 发明授权

US4752932A Branching optical waveguide for an index-guided semiconductor laser device 失效
标题翻译：用于折射率引导半导体激光器件的分支光波导
公开(公告)号：US4752932A
公开(公告)日：1988-06-21
申请号：US791122
申请日：1985-10-24
申请人： Mitsuhiro Matsumoto , Sadayoshi Matsui , Mototaka Taneya
发明人： Mitsuhiro Matsumoto , Sadayoshi Matsui , Mototaka Taneya
IPC分类号： H01S5/00 , H01S5/223 , H01S5/40 , H01S3/19
CPC分类号： H01S5/2232 , H01S5/4068
摘要： A semiconductor laser device uses an optical waveguide which is in a single mode in the center portion thereof and is in a branching mode at each of both end portions thereof to form two branch waveguides which are positioned symmetrically with respect to the waveguiding direction of the laser light and which are parallel to each other near the facets, thereby attaining a 0.degree.-phase shift between light waves propagated in the two branch waveguides and resulting in laser lights with a 0.degree.-phase shift therebetween.
摘要翻译：半导体激光器件使用在其中心部分处于单一模式的光波导，并且在其两端部分别处于分支模式，以形成相对于激光器的波导方向对称定位的两个分支波导光，并且在小平面附近彼此平行，从而在两个分支波导中传播的光波之间获得0°相移，并产生其间具有0°相移的激光。

68. 发明授权

US4747109A Semiconductor laser array device 失效
标题翻译：半导体激光阵列器件
公开(公告)号：US4747109A
公开(公告)日：1988-05-24
申请号：US881096
申请日：1986-07-02
申请人： Mototaka Taneya , Mitsuhiro Matsumoto , Sadayoshi Matsui , Seiki Yano
发明人： Mototaka Taneya , Mitsuhiro Matsumoto , Sadayoshi Matsui , Seiki Yano
IPC分类号： H01S5/00 , H01S5/10 , H01S5/40 , H01S3/19
CPC分类号： H01S5/10 , H01S5/4031
摘要： The laser device has a plurality of parallel index-waveguides. The intermediate regions of the waveguides are at an angle of inclination from a line perpendicular to each of both facets of the laser device. The ends of the waveguides are oriented orthogonally to the facets of the laser device.
摘要翻译：激光装置具有多个平行的折射率波导。波导的中间区域与垂直于激光装置的两个面的每个面的线倾斜成一定角度。波导的端部与激光器件的刻面正交定向。

69. 发明授权

US4716570A Distributed feedback semiconductor laser device 失效
标题翻译：分布式反馈半导体激光器件
公开(公告)号：US4716570A
公开(公告)日：1987-12-29
申请号：US816259
申请日：1986-01-06
申请人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Sadayoshi Matsui
发明人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Sadayoshi Matsui
IPC分类号： H01S5/12 , H01S5/223 , H01S3/19 , H01L29/161 , H01L29/205 , H01S3/08
CPC分类号： H01S5/1228 , H01S5/2232
摘要： A distributed feedback semiconductor laser device comprising an active layer positioned between a first cladding layer and a second cladding layer, and an absorption layer positioned between the active layer and one of the cladding layers, the absorption layer having grooves to form a diffraction grating with a given periodicity in the direction of the propagation of laser light.
摘要翻译：一种分布式反馈半导体激光器件，包括位于第一包层和第二包层之间的有源层和位于有源层与一个包覆层之间的吸收层，所述吸收层具有沟槽以形成具有在激光的传播方向给定周期性。

70. 发明授权

US4716129A Method for the production of semiconductor devices 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US4716129A
公开(公告)日：1987-12-29
申请号：US816569
申请日：1986-01-06
申请人： Mototaka Taneya , Sadayoshi Matsui , Mitsuhiro Matsumoto
发明人： Mototaka Taneya , Sadayoshi Matsui , Mitsuhiro Matsumoto
IPC分类号： H01L21/208 , H01L27/15 , H01L33/14 , H01L33/30 , H01S5/00
CPC分类号： H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/02576
摘要： A method for the production of semiconductor devices, using liquid phase epitaxy of semiconductors of Groups III to V of the periodic table, in which on a Te-doped first layer, a second layer having a polarity different from that of the first layer is grown, wherein a non-Te-doped third layer having the same polarity as the first layer is grown between the first layer and the second layer. Another method in which on a Te-doped first layer, a second layer having a principal crystal composition different from that of the first layer is grown, wherein a non-Te-doped third layer having the same principal crystal composition of the first layer is grown between the first layer and the second layer.
摘要翻译：使用周期表第III至V族的半导体的液相外延生产半导体器件的方法，其中在Te掺杂的第一层上生长具有与第一层的极性不同的第二层的半导体器件的生长方法其中在所述第一层和所述第二层之间生长具有与所述第一层相同极性的非Te掺杂的第三层。在Te掺杂的第一层上生长具有不同于第一层的主晶体组成的第二层的另一种方法，其中具有与第一层相同的主晶体组成的非Te掺杂的第三层为生长在第一层和第二层之间。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式