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    • 66. 发明申请
    • STRAIN CONTROL FOR ACCELERATION OF EPITAXIAL LIFT-OFF
    • 用于加速外力提升的应变控制
    • WO2013184638A3
    • 2014-02-20
    • PCT/US2013044028
    • 2013-06-04
    • UNIV MICHIGAN
    • FORREST STEPHEN RLEE KYUSANGZIMMERMAN JERAMY
    • H01L31/18H01L21/78
    • H01L21/7813H01L21/7806H01L31/1892Y02E10/50
    • There is disclosed a thin film device for epitaxial lift off comprising a handle and one or more straining layers disposed on the handle, wherein the one or more straining layers induce a curvature of the handle. There is also disclosed a method of fabricating a thin film device for epitaxial lift off comprising, depositing one or more straining layers on a handle, wherein the one or more straining layers induce at least one strain on the handle chosen from tensile strain, compressive strain and near-neutral strain. There is also disclosed a method for epitaxial lift off comprising, depositing an epilayer over a sacrificial layer disposed on a growth substrate; depositing one or more straining layers on at least one of the growth substrate and a handle; bonding the handle to the growth substrate; and etching the sacrificial layer.
    • 公开了一种用于外延剥离的薄膜装置,其包括手柄和设置在手柄上的一个或多个应变层,其中所述一个或多个应变层引起手柄的曲率。 还公开了一种制造用于外延剥离的薄膜装置的方法,包括:在手柄上沉积一个或多个应变层,其中所述一个或多个应变层在所述手柄上引起至少一个应变,所述应变选自拉伸应变,压缩应变 和近中性应变。 还公开了一种用于外延剥离的方法,包括:在设置在生长衬底上的牺牲层上沉积外延层; 在生长衬底和手柄中的至少一个上沉积一个或多个应变层; 将手柄结合到生长衬底; 并蚀刻牺牲层。