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61. 发明专利

JPH09129927A BLUE LIGHT EMITTING ELEMENT 失效
公开(公告)号：JPH09129927A
公开(公告)日：1997-05-16
申请号：JP23046596
申请日：1996-08-30
申请人： TOSHIBA CORP
发明人： NITTA KOICHI
IPC分类号： H01L33/12 , H01L33/20 , H01L33/28 , H01L33/32 , H01L33/34 , H01L33/42 , H01S5/00 , H01S5/323 , H01L33/00 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To provide a GaN type blue light emitting element of a small chip size. SOLUTION: A blue light emitting diode comprises a first conductivity GaN semiconductor buffer layer 101, first conductivity GaN semiconductor-made first clad layer 102, substantially intrinsic GaN semiconductor-made active layer 103 and second conductivity GaN semiconductor-made second clad layer 104 laminated on a conductive substrate. Each GaN semiconductor is a quaternary compd. semiconductor and preferably InxAlyGa1-x-y N, x ranging between 0 and 1, y ranging between 0 and 1, x+y not greater than 1. The values of x and y are selected for desired light emitting wavelength and intensity.

62. 发明专利

JPH0927639A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0927639A
公开(公告)日：1997-01-28
申请号：JP17603395
申请日：1995-07-12
申请人： TOSHIBA CORP
发明人： NITTA KOICHI , FUJIMOTO HIDETOSHI , ISHIKAWA MASAYUKI
IPC分类号： H01L33/10 , H01L33/12 , H01L33/32 , H01L33/36 , H01L33/46 , H01S5/00 , H01S5/323 , H01L33/00 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting diode, which can prevent water from intruding into the diode through a buffer layer and the like which are in an amorphous state, and has a long-term reliability. SOLUTION: In a light-emitting diode, a buffer layer 401 consisting of an InGlGaN material, an n-type contact layer 102, an n-type clad layer 103, an active layer 104, a p-type clad layer 105 and a p-type contact layer 106 are grown and formed in this order on a sapphire substrate 100, a P-type electrode 107 is formed on the layer 106, an N-type electrode 108 is formed on the layer 102 and an insulating film 109 is formed on the whole diode excluding one part of each of the electrodes 107 and 108.

63. 发明专利

JPH08148718A COMPOUND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH08148718A
公开(公告)日：1996-06-07
申请号：JP22181695
申请日：1995-08-30
申请人： TOSHIBA CORP
发明人： FUJIMOTO HIDETOSHI , NITTA KOICHI , ISHIKAWA MASAYUKI , SUGAWARA HIDETO , KOKUBU YOSHIHIRO , YAMAMOTO MASAHIRO
IPC分类号： H01L21/205 , H01L31/04 , H01L33/12 , H01L33/20 , H01L33/32 , H01L33/40 , H01S5/00 , H01S5/323 , H01L33/00 , H01S3/18
摘要： PURPOSE: To quickly form a flat film by containing magnesium or zinc with a specific concentration for quickening the migration of a semiconductor film from three-dimensional growth to two-dimensional growth. CONSTITUTION: In n-type nitride compound semiconductor crystal film where Si is added, the migration from three-dimensional growth to two-dimensional growth is slow. However, by adding magnesium simultaneously, the migration from the three-dimensional growth to the two-dimensional growth occurs relatively quickly, namely when the film thickness is thin. By adding magnesium, a flat thin film can be formed quickly. However, since magnesium is originally an impurity of acceptor property originally, its excessive addition prevents n-type crystal. The range of impurity concentration for achieving effect is 1×10 cm -1×10 cm in magnesium and 1×10 cm -1×10 cm in zinc. Buffer layer 22, n-type GaN layer 23, and n-type InGaN layer 24 are formed on Sapphire substrate 21. The addition of Zn helps a flat thin film to grow and a flat thin film can be formed quickly.

64. 发明专利

JPH07193320A SEMICONDUCTOR LASER 失效
公开(公告)号：JPH07193320A
公开(公告)日：1995-07-28
申请号：JP34853793
申请日：1993-12-27
申请人： TOSHIBA CORP
发明人： NITTA KOICHI , HATAGOSHI GENICHI , OKAJIMA MASASUE
IPC分类号： H01S5/00 , H01S3/18
摘要： PURPOSE:To increase the TE polarization/TM polarization ratio by a method wherein a metallic layer having TM polarization loss and TE polarization loss to the laser oscillation wavelength is to be provided in an optical waveguide structure. CONSTITUTION:The surface of the title semiconductor laser is flattened by a p-type GaAs cap layer 23, an n-type GaAs current block layer 25 and a p-type GaA5 contact layer 26. A pure Au metallic layer 24 having absorption loss to laser oscillation wavelength is provided on the surface. This Au metallic layer 24 is provided with a p-type electrode AuZn 28. Besides, an n-type GaAs substrate 11 is provided with an n-type electrode AuGe 27. Through these procedures, the Au metallic layer 24 fills the role of a layer giving the loss difference to TE polarization and TM polarization so that the loss to the TM polarization may be made sufficiently larger than the loss to the TE polarization by the distance value (h) between the Au metallic layer 24 and the active layers. Accordingly, the title semiconductor laser system in large TE polarization capable of using for such a device as a magneto-optical system etc. can be manufactured.

65. 发明专利

JPH06268318A SEMICONDUCTOR LASER 失效
公开(公告)号：JPH06268318A
公开(公告)日：1994-09-22
申请号：JP5240493
申请日：1993-03-12
申请人： TOSHIBA CORP
发明人： NITTA KOICHI , OKAJIMA MASASUE , ITAYA KAZUHIKO
IPC分类号： H01S5/00 , H01S3/18
摘要： PURPOSE:To provide an iNgAalp based semiconductor laser in which temperature characteristics are improved by setting the carrier concentration of p-clad layer sufficiently high. CONSTITUTION:The semiconductor laser has double heterostructure wherein an active layer 104 of In1-y(Ga1-zAlz)YP based material(0

66. 发明专利

JPH05335683A 失效
公开(公告)号：JPH05335683A
公开(公告)日：1993-12-17
申请号：JP13923092
申请日：1992-05-29
申请人： TOSHIBA CORP
发明人： NITTA KOICHI , WATANABE MINORU , OKAJIMA MASASUE
IPC分类号： H01S5/00 , H01S3/18
摘要： PURPOSE:To obtain a wide-stripe semiconductor laser which can be reduced in element resistance and has an excellent temperature characteristic by providing an impurity diffusion preventing layer. CONSTITUTION:An n-type GaAs buffer layer 12, n-type InGaAlP clad layer 13, undoped InGaAl clad layer 14, undoped InGaP active layer 15, undoped InGaAlP diffusion preventing layer 16, p-type InGaAlP clad layer 17, p-type InGaP cap layer 18, and n-type GaAs current blocking layer 19 are successively grown on an n-type GaAs substrate 11. Then a p-type GaAs contact layer 20 containing a stripe-like opening is grown on the layer 19. In addition, an n-type AuGe electrode 21 and p-type AuZn electrode 22 are respectively formed on the rear surface of the substrate 11 and on the layer 20. Therefore, heat generation from this semiconductor laser can be suppressed and the operation of the laser can be stabilized, since the carrier concentration in the p-type clad layer 17 can be increased without diffusing impurities in the active layer 15.

67. 发明专利

JPH05114765A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH05114765A
公开(公告)日：1993-05-07
申请号：JP27291091
申请日：1991-10-21
申请人： TOSHIBA CORP
发明人： ITAYA KAZUHIKO , HATAGOSHI GENICHI , NITTA KOICHI
IPC分类号： H01S5/00 , H01S5/028 , H01S5/042 , H01S5/06 , H01S5/10 , H01S5/12 , H01S5/16 , H01S5/223 , H01S5/32 , H01S5/323
摘要： PURPOSE:To provide a semiconductor laser device of end-face current injection structure which is able to prevent light rays from being absorbed at its end face and excellent in high output characteristics and where a COD level is high. CONSTITUTION:A semiconductor laser device of end-face current injection structure is provided with a double hetero-structure which is composed of an InGaP active layer 14 sandwiched between an N-InGaAlP clad layer 13 and P-InGaAlP clad layers 15 and 17 and provided onto an N-GaAs substrate 11, where the crystal axial of the primary surface of the substrate 11 is inclined from a [100] direction to a [001] direction by an angle of 5 decrees and a current non-injection region provided to one end of the double hetero-structure in a resonator direction. A high reflection coat 23 is provided to the other end of the double hetero-structure opposed to the end where the current non- injection region is provided.

68. 发明专利

JPH04240790A SEMICONDUCTOR LASER DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH04240790A
公开(公告)日：1992-08-28
申请号：JP729791
申请日：1991-01-24
申请人： TOSHIBA CORP
发明人： HATAGOSHI GENICHI , ITAYA KAZUHIKO , NISHIKAWA YUKIE , SUZUKI MARIKO , NITTA KOICHI , OKAJIMA MASASUE
IPC分类号： H01S5/00 , H01S5/16
摘要： PURPOSE:To provide a window-structure semiconductor laser device, of refractive-index waveguide type, which can be manufactured by a simple process. CONSTITUTION:The title laser device is composed of the following: a double heterostructure part in which an active layer has been sandwiched between an n-type clad layer and a p-type clad layer a first region which is formed on the p-type clad layer and in which a beam-radiant edge part has been removed in a stripe-shaped region in the direction of a resonator; and an n-type semiconductor layer in which an opening has been formed in second regions formed so as to sandwich the stripe-shaped region on the beam-radiant edge part. An effective refractive index in a third region sandwiched between the second regions is higher than that of the second regions; a band gap in the region of the active layer under the third region is larger than that under the first region. Since a waveguide structure and a window structure can be formed by two crystal growth operations, it is possible to realize a window-structure semiconductor laser, of refractive-index waveguide type, which can be manufactured by a simple process.

69. 发明专利

JPH03171790A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH03171790A
公开(公告)日：1991-07-25
申请号：JP31136489
申请日：1989-11-30
申请人： TOSHIBA CORP
发明人： ITAYA KAZUHIKO , NITTA KOICHI
IPC分类号： H01S5/00
摘要： PURPOSE:To prevent a short-circuit, a stress at the time of mounting by optimiz ing the thickness of a contact layer. CONSTITUTION:Composition of In, Ga, Al is so determined that lattice constants of layers 13-15 of a double hetero structure are equal to that of a GaAs sub strate 1 and band gap energies of the clad layers 13, 15 are larger than that of the active layer 14. A p-type GaAs contact layer (second contact layer) 17 is formed on a cap layer 16 and the layer 15. The thickness (d) of the layer 17 is set to 2mum

70. 发明专利

JPH01202881A MANUFACTURE OF SEMICONDUCTOR LIGHT EMITTING ELEMENT 失效
公开(公告)号：JPH01202881A
公开(公告)日：1989-08-15
申请号：JP2649088
申请日：1988-02-09
申请人： TOSHIBA CORP
发明人： NITTA KOICHI , ISHIKAWA MASAYUKI
IPC分类号： H01L21/308 , H01S5/00
摘要： PURPOSE:To improve yield, current constriction efficiency and reliability by providing a region in which impurity is diffused to an intermediate band gap layer which is not covered with a current constriction layer and by providing a contact layer on the intermediate band gap layer which is not covered with the current constriction layer and on the current constriction layer. CONSTITUTION:Of clad layers 43, 45, a current constriction layer 47 which is partially removed is provided at least on a second clad layer 45 which is located on the opposite side of a substrate. A region 49 whereon impurity of the same conduction type as the second clad layer 45 is diffused is provided from a region 52 where the current constriction layer 47 is removed and to the second clad layer 45. Furthermore, a contact layer 48 of the same conduction type of the second clad layer 42 is provided on the current constriction layer 47 which has the diffused region 49. In this way, highly efficient and reliable visible light semiconductor light emitting element can be acquired which is provided with high yield and good current constriction.

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