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    • 62. 发明授权
    • Solid-state image pickup apparatus
    • 固态摄像装置
    • US07227208B2
    • 2007-06-05
    • US11190964
    • 2005-07-28
    • Masanori OguraFumihiro InuiToru KoizumiSeiichiro Sakai
    • Masanori OguraFumihiro InuiToru KoizumiSeiichiro Sakai
    • H01L27/146H01L31/14
    • H01L27/14609H01L27/14603H01L27/14641H01L31/035236
    • The invention is to suppress a leak current in a photodiode and an unevenness in the leak currents. In a photoelectric converting device including a channel stop area of a higher concentration than in an element isolating insulation film formed between a photodiode, having an n-type semiconductor area formed in a p-type semiconductor, and an adjacent element, and in a p-type semiconductor layer formed under the element isolating insulation film, and a wiring layer formed in a part on the element isolating insulation film, the wiring layers on the element isolating insulation film adjacent to the photodiodes are unified in an effective area and a potential, and a p-type dark current reducing area of a higher concentration than in the channel stop area is provided in at least a part of an area opposed to the wiring layer across the element isolating insulation film.
    • 本发明是为了抑制光电二极管的漏电流和漏电流的不均匀性。 在具有比形成在p型半导体中形成的n型半导体区域的光电二极管和相邻元件之间形成的元件隔离绝缘膜中的浓度高的沟道停止区域的光电转换装置中, 形成在元件隔离绝缘膜下面的布线层和形成在元件隔离绝缘膜上的部分中的布线层,与光电二极管相邻的元件隔离绝缘膜上的布线层在有效区域和电位中被统一, 并且在穿过元件隔离绝缘膜的与布线层相对的区域的至少一部分中提供了比沟道停止区域中更高浓度的p型暗电流减小区域。
    • 64. 发明授权
    • Solid-state image pickup device and control method thereof, and camera
    • 固态摄像装置及其控制方法及相机
    • US07538810B2
    • 2009-05-26
    • US11332734
    • 2006-01-13
    • Toru KoizumiAkira OkitaKatsuhito SakuraiIsamu Ueno
    • Toru KoizumiAkira OkitaKatsuhito SakuraiIsamu Ueno
    • H04N3/14
    • H04N5/369H04N5/3559H04N5/3592H04N5/37452
    • An object of the invention is to cause a part of charge spilling from a photoelectric conversion unit to flow into a charge holding unit and thereby extend dynamic range and at the same time improve image quality. There is provided a solid-state image pickup device having a pixel including: a photoelectric conversion unit generating and accumulating charge by means of photoelectric conversion; a first charge holding unit being shielded from light, and being adaptable to accumulate a part of charge spilling from the photoelectric conversion unit in a period during which the photoelectric conversion unit generates and accumulates charge; an amplifying unit (SF-MOS) amplifying charge; a first transfer unit (Tx-MOS) transferring the charge accumulated in the photoelectric conversion unit to the amplifying unit; and a second transfer unit (Ty-MOS) transferring the charge accumulated in the first charge holding unit to the amplifying unit.
    • 本发明的目的是使光电转换单元的一部分电荷溢出流入电荷保持单元,从而延长动态范围,同时提高图像质量。 提供一种具有像素的固体摄像装置,该像素包括:光电转换单元,通过光电转换产生和累积电荷; 第一电荷保持单元被遮光,并且适于在光电转换单元产生并累积电荷的时段期间累积从光电转换单元溢出的电荷的一部分; 放大单元(SF-MOS)放大电荷; 将累积在光电转换单元中的电荷传送到放大单元的第一传送单元(Tx-MOS) 以及将在第一电荷保持单元中累积的电荷转移到放大单元的第二转印单元(Ty-MOS)。
    • 65. 发明申请
    • SOLID-STATE IMAGE PICKUP DEVICE AND CONTROL METHOD THEREOF, AND CAMERA
    • 固态图像拾取装置及其控制方法及相机
    • US20120086843A1
    • 2012-04-12
    • US13326743
    • 2011-12-15
    • Toru KoizumiAkira OkitaKatsuhito SakuraiIsamu Ueno
    • Toru KoizumiAkira OkitaKatsuhito SakuraiIsamu Ueno
    • H04N5/335
    • H04N5/369H04N5/3559H04N5/3592H04N5/37452
    • An object of the invention is to cause a part of charge spilling from a photoelectric conversion unit to flow into a charge holding unit and thereby extend dynamic range and at the same time improve image quality. There is provided a solid-state image pickup device having a pixel including: a photoelectric conversion unit generating and accumulating charge by means of photoelectric conversion; a first charge holding unit being shielded from light, and being adaptable to accumulate a part of charge spilling from the photoelectric conversion unit in a period during which the photoelectric conversion unit generates and accumulates charge; an amplifying unit (SF-MOS) amplifying charge; a first transfer unit (Tx-MOS) transferring the charge accumulated in the photoelectric conversion unit to the amplifying unit; and a second transfer unit (Ty-MOS) transferring the charge accumulated in the first charge holding unit to the amplifying unit.
    • 本发明的目的是使光电转换单元的一部分电荷溢出流入电荷保持单元,从而延长动态范围,同时提高图像质量。 提供一种具有像素的固体摄像装置,该像素包括:光电转换单元,通过光电转换产生和累积电荷; 第一电荷保持单元被遮光,并且适于在光电转换单元产生并累积电荷的时段期间累积从光电转换单元溢出的电荷的一部分; 放大单元(SF-MOS)放大电荷; 将累积在光电转换单元中的电荷传送到放大单元的第一传送单元(Tx-MOS) 以及将在第一电荷保持单元中累积的电荷转移到放大单元的第二转印单元(Ty-MOS)。
    • 67. 发明授权
    • Image sensing device and imaging system
    • 图像感测装置及成像系统
    • US08368785B2
    • 2013-02-05
    • US12812595
    • 2009-03-09
    • Tatsuya RyokiToru KoizumiMasanori Ogura
    • Tatsuya RyokiToru KoizumiMasanori Ogura
    • H04N3/14H04N5/335H04N5/225H01L31/062H01L31/113
    • H04N5/3698H01L27/14643H04N5/3575H04N5/3742H04N5/378
    • An image sensing device characterized by including: a pixel array; a plurality of first holding capacitances; a plurality of second holding capacitances; a first reference power supply pattern; and a second reference power supply pattern, wherein at least part of the first reference power supply pattern is arranged in a first region where reference power supply electrodes of the plurality of first holding capacitances are arrayed, at least part of the second reference power supply pattern is arranged in a second region where reference power supply electrodes of the plurality of second holding capacitances are arrayed, and the first reference power supply pattern and the second reference power supply pattern are isolated in a region including the first region and the second region.
    • 一种图像感测装置,其特征在于包括:像素阵列; 多个第一保持电容; 多个第二保持电容; 第一参考电源模式; 以及第二参考电源图案,其中所述第一参考电源图案的至少一部分布置在所述多个第一保持电容中的参考电源电极排列的第一区域中,所述第二参考电源图案的至少一部分 布置在排列有多个第二保持电容的参考电源电极的第二区域中,并且第一参考电源图案和第二参考电源图案在包括第一区域和第二区域的区域中被隔离。