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    • 62. 发明授权
    • Plasma processing apparatus
    • 等离子体处理装置
    • US5942075A
    • 1999-08-24
    • US664500
    • 1996-06-17
    • Kazunori NagahataKazuya Nagaseki
    • Kazunori NagahataKazuya Nagaseki
    • H05H1/46C23C16/44C23C16/50C23C16/509C23F4/00H01J37/32H01L21/205H01L21/302H01L21/3065C23F1/08
    • H01J37/32458C23C16/4401C23C16/5096H01J37/32082
    • A plasma processing apparatus includes a processing vessel for accommodating an object to be processed, a processing supplying mechanism for supplying processing gas into the processing vessel, first and second electrodes arranged to oppose each other in the processing vessel, and high-frequency power supply for supplying a high-frequency power to at least one of the first and second electrodes. The apparatus forms a plasma of the processing gas by using discharge occurring between the first and second electrodes due to the high-frequency power and performs a plasma process for the object by using the plasma. The surface of a solid except for the object to be processed in the processing vessel has a corner portion and a portion other than the corner portion, and the solid surface has a shape by which the thickness of a sheath formed between the solid surface and the plasma is nearly uniform in the corner portion and the other portion.
    • 等离子体处理装置包括用于容纳被处理物体的处理容器,将处理气体供给到处理容器内的处理供给机构,处理容器内相对配置的第一和第二电极,以及高频电源, 向第一和第二电极中的至少一个提供高频电力。 该装置由于高频功率而通过使用在第一和第二电极之间发生的放电来形成处理气体的等离子体,并且通过使用等离子体来执行对象的等离子体处理。 在处理容器中除了待处理物体之外的固体表面具有角部和角部以外的部分,并且固体表面具有在固体表面和固体表面之间形成的护套的厚度的形状 等离子体在角部和另一部分中几乎均匀。