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61. 发明授权

US07630176B2 Seed layer for fabricating spin valve heads for ultra-high density recordings 有权
标题翻译：用于制造用于超高密度记录的自旋阀头的种子层
公开(公告)号：US07630176B2
公开(公告)日：2009-12-08
申请号：US11804271
申请日：2007-05-17
申请人： Cheng T. Horng , Hui-Chuan Wang , Ru-Ying Tong , Chyu-Jiuh Torng
发明人： Cheng T. Horng , Hui-Chuan Wang , Ru-Ying Tong , Chyu-Jiuh Torng
IPC分类号： G11B5/33
CPC分类号： B82Y10/00 , G11B5/3906 , Y10T29/49032 , Y10T29/49034 , Y10T29/49037 , Y10T29/49044 , Y10T428/1121 , Y10T428/115 , Y10T428/12778
摘要： A method for forming a bottom spin valve sensor element with a novel seed layer and synthetic antiferromagnetic pinned layer and the sensor so formed. The novel seed layer comprises an approximately 30 angstrom thick layer of NiCr whose atomic percent of Cr is 31%. On this seed layer there can be formed either a single bottom spin valve read sensor or a symmetric dual spin valve read sensor having synthetic antiferromagnetic pinned layers. An extremely thin (approximately 80 angstroms) MnPt pinning layer can be formed directly on the seed layer and extremely thin pinned and free layers can then subsequently be formed so that the sensors can be used to read recorded media with densities exceeding 60 Gb/in2. Moreover, the high pinning field and optimum magnetostriction produces an extremely robust sensor.
摘要翻译：一种用于形成具有新型种子层和合成反铁磁钉扎层的底部自旋阀传感器元件的方法，以及如此形成的传感器。该新型种子层包含约30埃厚的CrCr原子百分比为31％的NiCr层。在该种子层上，可以形成单个底部自旋阀读取传感器或具有合成反铁磁固定层的对称双自旋阀读取传感器。可以在种子层上直接形成非常薄的（约80埃）MnPt钉扎层，然后可以随后形成极薄的钉扎和自由层，使得传感器可用于读取密度超过60Gb / in2的记录介质。此外，高钉扎场和最佳磁致伸缩产生极其鲁棒的传感器。

62. 发明申请

US20090108383A1 High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same 有权
标题翻译：用于常规MRAM和STT-RAM的高性能MTJ元件及其制造方法
公开(公告)号：US20090108383A1
公开(公告)日：2009-04-30
申请号：US11981127
申请日：2007-10-31
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
IPC分类号： H01L29/82 , H01L21/8246
CPC分类号： H01L43/10 , B82Y10/00 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A STT-RAM MTJ that minimizes spin-transfer magnetization switching current (Jc) is disclosed. The MTJ has a MgO tunnel barrier layer formed with a natural oxidation process to achieve a low RA (10 ohm-um2) and a Fe or Fe/CoFeB/Fe free layer which provides a lower intrinsic damping constant than a CoFeB free layer. A Fe, FeB, or Fe/CoFeB/Fe free layer when formed with a MgO tunnel barrier (radical oxidation process) and a CoFeB AP1 pinned layer in a MRAM MTJ stack annealed at 360° C. provides a high dR/R (TMR)>100% and a substantial improvement in read margin with a TMR/Rp_cov=20. High speed measurement of 100 nm×200 nm oval STT-RAM MTJs has shown a Jc0 for switching a Fe free layer is one half that for switching an amorphous CO40Fe40B20 free layer. A Fe/CoFeB/Fe free layer configuration allows the Hc value to be increased for STT-RAM applications.
摘要翻译：公开了使自旋转移磁化开关电流（Jc）最小化的STT-RAM MTJ。 MTJ具有形成有自然氧化工艺的MgO隧道阻挡层，以实现低的RA（10欧姆 - um2）和不含CoFeB自由层的较低的固有阻尼常数的Fe或Fe / CoFeB / Fe自由层。当在360℃退火的MRAM MTJ堆叠中形成具有MgO隧道势垒（自由基氧化法）和CoFeB AP1钉扎层的Fe，FeB或Fe / CoFeB / Fe自由层时，提供高dR / R（TMR ）> 100％，TMR / Rp_cov = 20时读取余量大幅度提高。 100 nmx200 nm椭圆形STT-RAM MTJ的高速测量显示，用于切换无Fe层的Jc0是用于切换无定形CO40Fe40B20自由层的一半。 Fe / CoFeB / Fe自由层配置允许为STT-RAM应用增加Hc值。

63. 发明授权

US07390530B2 Structure and process for composite free layer in CPP GMR device 失效
标题翻译： CPP GMR装置中复合自由层的结构与工艺
公开(公告)号：US07390530B2
公开(公告)日：2008-06-24
申请号：US10999826
申请日：2004-11-30
申请人： Hui-Chuan Wang , Min Li , Tong Zhao , Kunliang Zhang , Chyu-Jiuh Torng
发明人： Hui-Chuan Wang , Min Li , Tong Zhao , Kunliang Zhang , Chyu-Jiuh Torng
IPC分类号： B05D5/12
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , Y10T29/49044 , Y10T428/11 , Y10T428/1107 , Y10T428/1121 , Y10T428/1129
摘要： The conventional free layer in a CPP GMR read head has been replaced by a tri-layer laminate comprising Co rich CoFe, moderately Fe rich NiFe, and heavily Fe rich NiFe. The result is an improved device that has a higher MR ratio than prior art devices, while still maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is also described.
摘要翻译： CPP GMR读取头中的常规自由层已经被包含Co富CoFe，适度富Fe的NiFe和大量富Fe NiFe的三层层压体所代替。结果是具有比现有技术的装置更高的MR比的改进的装置，同时仍然保持自由层柔软性和可接受的磁致伸缩。还描述了用于制造该装置的方法。

64. 发明申请

US20070223151A1 Novel seed layer for fabricating spin valve heads for ultra-high density recordings 有权
标题翻译：用于制造用于超高密度记录的自旋阀头的新型种子层
公开(公告)号：US20070223151A1
公开(公告)日：2007-09-27
申请号：US11804241
申请日：2007-05-17
申请人： Cheng Horng , Hui-Chuan Wang , Ru-Ying Tong , Chyu-Jiuh Torng
发明人： Cheng Horng , Hui-Chuan Wang , Ru-Ying Tong , Chyu-Jiuh Torng
IPC分类号： G11B5/127
CPC分类号： B82Y10/00 , G11B5/3906 , Y10T29/49032 , Y10T29/49034 , Y10T29/49037 , Y10T29/49044 , Y10T428/1121 , Y10T428/115 , Y10T428/12778
摘要： A method for forming a bottom spin valve sensor element with a novel seed layer and synthetic antiferromagnetic pinned layer and the sensor so formed. The novel seed layer comprises an approximately 30 angstrom thick layer of NiCr whose atomic percent of Cr is 31%. On this seed layer there can be formed either a single bottom spin valve read sensor or a symmetric dual spin valve read sensor having synthetic antiferromagnetic pinned layers. An extremely thin (approximately 80 angstroms) MnPt pinning layer can be formed directly on the seed layer and extremely thin pinned and free layers can then subsequently be formed so that the sensors can be used to read recorded media with densities exceeding 60 Gb/in2. Moreover, the high pinning field and optimum magnetostriction produces an extremely robust sensor.
摘要翻译：一种用于形成具有新型种子层和合成反铁磁钉扎层的底部自旋阀传感器元件的方法，以及如此形成的传感器。该新型种子层包含约30埃厚的CrCr原子百分比为31％的NiCr层。在该种子层上，可以形成单个底部自旋阀读取传感器或具有合成反铁磁固定层的对称双自旋阀读取传感器。可以在种子层上直接形成非常薄的（约80埃）MnPt钉扎层，然后可以随后形成极薄的钉扎和自由层，使得传感器可用于读取密度超过60Gb / in的记录介质， SUP> 2 。此外，高钉扎场和最佳磁致伸缩产生极其鲁棒的传感器。

65. 发明申请

US20070080381A1 Robust protective layer for MTJ devices 审中-公开
标题翻译：坚固的MTJ设备保护层
公开(公告)号：US20070080381A1
公开(公告)日：2007-04-12
申请号：US11248965
申请日：2005-10-12
申请人： Chen-Jung Chien , Yu-Hsia Chen , Chyu-Jiuh Torng , Cherng-Chyi Han
发明人： Chen-Jung Chien , Yu-Hsia Chen , Chyu-Jiuh Torng , Cherng-Chyi Han
IPC分类号： H01L29/94
CPC分类号： H01L43/12 , B82Y25/00 , G11C11/16 , H01F10/3254 , H01F10/3268 , H01F41/32 , H01L43/08
摘要： MTJ devices commonly degrade when subjected to the heat treatments required by subsequent further processing. This problem has been overcome by protecting the MTJ's sidewalls with a two layer laminate. The first layer is laid down under oxygen-free conditions, no attempt being made to replace any oxygen that is lost during the deposition. This is followed immediately by the deposition of the second layer (usually, but not mandatorily, of the same material as the first layer) in the presence of some oxygen.
摘要翻译：当经过后续进一步处理所需的热处理时，MTJ装置通常会降解。通过用双层层压板保护MTJ的侧壁已经克服了这个问题。第一层被放置在无氧条件下，没有试图取代沉积过程中损失的任何氧气。这是在存在一些氧气的情况下立即通过沉积第二层（通常但不强制地与第一层相同的材料）沉积。

66. 发明授权

US07099125B2 Easily manufactured exchange bias stabilization scheme 失效
公开(公告)号：US07099125B2
公开(公告)日：2006-08-29
申请号：US11268074
申请日：2005-11-07
申请人： Yun-Fei Li , Hui-Chuan Wang , Chyu-Jiuh Torng , Cherng Chyi Han
发明人： Yun-Fei Li , Hui-Chuan Wang , Chyu-Jiuh Torng , Cherng Chyi Han
IPC分类号： G11B5/39 , G11B5/147
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/3143 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , Y10T29/49032 , Y10T29/49044 , Y10T29/49046
摘要： A problem associated with current bottom spin valve designs is that it is difficult to avoid magnetic charge accumulation at the edge of the sensor area, making a coherent spin rotation during sensing difficult to achieve. This problem has been eliminated by introducing an exchange coupling layer between the free layer and the ferromagnetic layer that is used to achieve longitudinal bias for stabilization and by extending the free layer well beyond the sensor area. After all layers have been deposited, the read gap is formed by etching down as far as this layer. Since it is not critical exactly how much of the biasing layers (antiferromagnetic as well as ferromagnetic) are removed, the etching requirements are greatly relaxed. Whatever material remains in the gap is then oxidized thereby providing a capping layer as well as a good interface for specular reflection in the sensor region.

67. 发明申请

US20060152861A1 Tunneling magneto-resistive spin valve sensor with novel composite free layer 有权
公开(公告)号：US20060152861A1
公开(公告)日：2006-07-13
申请号：US11034114
申请日：2005-01-12
申请人： Tong Zhao , Hui-Chuan Wang , Chyu-Jiuh Torng
发明人： Tong Zhao , Hui-Chuan Wang , Chyu-Jiuh Torng
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , H01F10/3254 , H01F10/3281 , H01F10/3295 , H01L43/08 , Y10T428/1114
摘要： The conventional free layer in a TMR read head has been replaced by a composite of two or more magnetic layers, one of which is iron rich The result is an improved device that has a higher MR ratio than prior art devices, while still maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is also described.

68. 发明申请

US20060132988A1 Novel hard bias design for sensor applications 有权
标题翻译：传感器应用的新型硬偏置设计
公开(公告)号：US20060132988A1
公开(公告)日：2006-06-22
申请号：US11016506
申请日：2004-12-17
申请人： Kunliang Zhang , Mao-Min Chen , Chyu-Jiuh Torng , Min Li , Chen-Jung Chien
发明人： Kunliang Zhang , Mao-Min Chen , Chyu-Jiuh Torng , Min Li , Chen-Jung Chien
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49032
摘要： A hard bias structure for biasing a free layer in a MR element within a magnetic read head is comprised of a soft magnetic underlayer such as NiFe and a hard bias layer comprised of Co78.6Cr5.2Pt16.2 or Co65Cr15Pt20 that are rigidly exchange coupled to ensure a well aligned longitudinal biasing direction with minimal dispersions. The hard bias structure is formed on a BCC seed layer such as CrTi to improve lattice matching. The hard bias structure may be laminated in which each of the underlayers and hard bias layers has a thickness that is adjusted to optimize the total HC, Mrt, and S values. The present invention encompasses CIP and CPP spin values, MTJ devices, and multi-layer sensors. A larger process window for fabricating the hard bias structure is realized and lower asymmetry output and NBLW reject rates during a read operation are achieved.
摘要翻译：用于偏置磁读头内的MR元件中的自由层的硬偏压结构由诸如NiFe的软磁性底层和由Co ++ 78.6Cr 5.2构成的硬偏置层组成，或刚性交换耦合以确保良好对准的/SUB>Pt_{16.2 或Co 15 Cr 15 纵向偏置方向最小分散。在诸如CrTi的BCC种子层上形成硬偏压结构以改善晶格匹配。可以层压硬偏压结构，其中每个底层和硬偏压层具有被调节以使总H C，M L t和S的最大化的厚度价值观。本发明包括CIP和CPP旋转值，MTJ装置和多层传感器。实现了用于制造硬偏置结构的更大的工艺窗口，并且实现了读操作期间较低的不对称输出和NBLW废弃率。}

69. 发明授权

US07050273B2 Bottom spin valve sensor having a lead overlay (LOL) structure fabricated thereon 失效
标题翻译：底部旋转阀传感器，其上制造有铅覆盖（LOL）结构
公开(公告)号：US07050273B2
公开(公告)日：2006-05-23
申请号：US10922540
申请日：2004-08-20
申请人： Cheng T. Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Ru-Ying Tong , Chyu-Jiuh Torng , Hui-Chuan Wang
发明人： Cheng T. Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Ru-Ying Tong , Chyu-Jiuh Torng , Hui-Chuan Wang
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49041 , Y10T29/49044 , Y10T29/49048 , Y10T29/49052
摘要： A method for fabricating a longitudinally hard biased, bottom spin valve GMR sensor with a lead overlay (LOL) conducting lead configuration and a narrow effective trackwidth. The advantageous properties of the sensor are obtained by providing two novel barrier layers, one of which prevents oxidation of and Au diffusion into the free layer during annealing and etching and the other of which prevents oxidation of the capping layer during annealing so as to allow good electrical contact between the lead and the sensor stack.
摘要翻译：一种用于制造具有引线覆盖（LOL）导线配置和窄有效轨道宽度的纵向硬偏置底部自旋阀GMR传感器的方法。传感器的有利性质是通过提供两个新的阻挡层获得的，其中之一是防止在退火和蚀刻期间氧化和Au扩散到自由层中，另一个阻止退火期间封盖层的氧化，从而使得良好引线和传感器堆叠之间的电接触。

70. 发明授权

US07016165B2 Abutted junction GMR read head with an improved hard bias layer and a method for its fabrication 失效
标题翻译：基极GMR读头具有改进的硬偏置层及其制造方法
公开(公告)号：US07016165B2
公开(公告)日：2006-03-21
申请号：US09822491
申请日：2001-04-02
申请人： Chen-Jung Chien , Chyu-Jiuh Torng , Cherng-Chyi Han , Cheng T. Horng , Mao-Min Chen
发明人： Chen-Jung Chien , Chyu-Jiuh Torng , Cherng-Chyi Han , Cheng T. Horng , Mao-Min Chen
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3163 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , Y10T29/49032
摘要： A method for forming a spin-valve type abutted junction GMR sensor element with a thinner hard magnetic longitudinal bias layer having significantly improved magnetic properties in the junction region and a spin-valve type abutted junction GMR sensor element with a thinner hard magnetic longitudinal bias layer having significantly improved magnetic properties in the junction region fabricated according to that method.
摘要翻译：用于形成具有较薄的硬磁纵向偏置层的自旋阀型抵接接头GMR传感器元件的方法，其具有在接合区域中显着改善的磁性能和具有较薄硬磁纵向偏置层的自旋阀型邻接结GMR传感器元件在根据该方法制造的接合区域中具有显着改善的磁性能。

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