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61. 发明申请

US20050170618A1 Manufacturing method of semiconductor film and image display device 有权
标题翻译：半导体薄膜和图像显示装置的制造方法
公开(公告)号：US20050170618A1
公开(公告)日：2005-08-04
申请号：US11007188
申请日：2004-12-09
申请人： Mutsuko Hatano , Mikio Hongo , Akio Yazaki , Mitsuharu Tai , Takeshi Noda , Yukio Takasaki
发明人： Mutsuko Hatano , Mikio Hongo , Akio Yazaki , Mitsuharu Tai , Takeshi Noda , Yukio Takasaki
IPC分类号： G02F1/1368 , C30B1/06 , G02F1/133 , H01L21/20 , H01L21/268 , H01L21/324 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786 , H01L21/00 , C30B1/00 , H01L21/36
CPC分类号： H01L21/02691 , C30B1/06 , H01L21/02683 , H01L21/02686 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/04
摘要： A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallized such that crystalline grains grow in the scanning direction, on the substrate, on XY coordinates where value x of beam size W (μm) of the laser light measured in substantially the same direction as the scanning direction is defined as X axis, and where value y of scanning velocity Vs (m/s) is defined as Y axis, the crystallization processing is performed within a region where all of the following conditions hold: condition 1: the beam size W is larger than wavelength of the laser beam, condition 2: the scanning velocity Vs is smaller than upper-limit of crystal growth speed, and condition 3: x×(1/y)
摘要翻译：通过将激光或基板扫描到半导体薄膜的任意区域上并在其上照射激光来制造半导体薄膜。半导体薄膜由基本上带状的晶体形成，使得晶粒在扫描方向上在基板上在XY坐标上生长，其中激光的光束尺寸W（mum）的值x基本上在与扫描方向相同的方向被定义为X轴，其中扫描速度Vs（m / s）的值y被定义为Y轴，在满足以下所有条件的区域内进行结晶处理：条件1：光束尺寸W大于激光束的波长，条件2：扫描速度Vs小于晶体生长速度的上限，条件3：xx（1 / y）<25μs。

62. 发明申请

US20050170572A1 Laser annealing apparatus and annealing method of semiconductor thin film using the same 有权
标题翻译：激光退火装置及使用其的半导体薄膜的退火方法
公开(公告)号：US20050170572A1
公开(公告)日：2005-08-04
申请号：US10986936
申请日：2004-11-15
申请人： Mikio Hongo , Akio Yazaki , Mutsuko Hatano
发明人： Mikio Hongo , Akio Yazaki , Mutsuko Hatano
IPC分类号： H01L21/20 , B23K26/073 , B23K26/08 , G02B27/09 , G02F1/13 , H01L21/268 , H01L21/77 , H01L21/00 , H01S3/13 , H01J1/52 , H01L21/84 , G01J5/02 , G21K1/00 , H01J3/00 , G02B5/00 , H01J5/18 , H01J29/46
CPC分类号： B23K26/0738 , B23K26/0853 , G02B27/0927 , G02B27/0966 , H01L21/02678 , H01L21/02683 , H01L21/02691 , H01L21/2026 , H01L27/1285 , H01L27/1296
摘要： A laser beam temporally modulated in amplitude by a modulator and shaped into a long and narrow shape by a beam shaper is rotated around the optical axis of an image rotator inserted between the beam shaper and a substrate. Thus, the longitudinal direction of the laser beam having the long and narrow shape is rotated around the optical axis on the substrate. In order to perform annealing in a plurality of directions on the substrate, the laser beam shaped into the long and narrow shape is rotated on the substrate while a stage mounted with the substrate is moved only in two directions, that is, X- and Y-directions. In such a manner, the substrate can be scanned at a high speed with a continuous wave laser beam modulated temporally in amplitude and shaped into a long and narrow shape, without rotating the substrate. Thus, a semiconductor film can be annealed.
摘要翻译：通过调制器暂时调制振幅的激光束并通过光束整形器成形为长而窄的形状围绕插入在光束整形器和基板之间的图像旋转器的光轴旋转。因此，具有长而窄形状的激光束的纵向方向围绕基板上的光轴旋转。为了在基板上沿多个方向进行退火，将形成为长而窄的形状的激光束在基板上旋转，而安装有基板的台仅沿两个方向移动，即，X轴和Y轴方向以这样一种方式，可以用波长时间上调制并成形为长而窄的连续波激光束高速扫描基板，而不旋转基板。因此，半导体膜可以退火。

63. 发明授权

US06756614B2 Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus 有权
标题翻译：薄膜半导体器件，多晶半导体薄膜生产工艺及生产设备
公开(公告)号：US06756614B2
公开(公告)日：2004-06-29
申请号：US09791853
申请日：2001-02-26
申请人： Mutsuko Hatano , Shinya Yamaguchi , Yoshinobu Kimura , Seong-Kee Park
发明人： Mutsuko Hatano , Shinya Yamaguchi , Yoshinobu Kimura , Seong-Kee Park
IPC分类号： H01L31072
CPC分类号： H01L29/04 , B23K26/0622 , H01L21/02686 , H01L21/02691 , H01L27/1281 , H01L27/1285 , H01L27/1296 , H01L29/78675
摘要： In an MIS field effect transistor having a gate electrode formed on a first semiconductor layer which is a polycrystalline silicon film on an insulating substrate through a gate insulating film, a channel region formed in the semiconductor layer and a source region and a drain region arranged on both sides of the channel region, a thin film semiconductor device has a main orientation of at least the channel region of {110} with respect to the surface of the gate insulating film. Further, a polycrystalline semiconductor film having a main orientation of the surface almost perpendicular to a direction for connecting the source and drain regions of {100} is preferably used in the channel of a semiconductor device. According to the present invention, a semiconductor device having a high-quality polycrystalline semiconductor film whose grain boundary, grain size and crystal orientation can be controlled and whose film roughness and crystal defects formed by crystallization have been reduced can be obtained on the insulating substrate.
摘要翻译：在具有通过栅极绝缘膜在绝缘基板上形成在多晶硅膜的第一半导体层上的栅电极的MIS场效应晶体管中，形成在半导体层中的沟道区和布置在该半导体层上的源极区和漏极区通道区域的两侧，薄膜半导体器件相对于栅极绝缘膜的表面至少具有{110}的沟道区域的主取向。此外，优选在半导体器件的沟道中使用具有与用于连接{100}的源极和漏极区域的方向几乎垂直的表面的主取向的多晶半导体膜。根据本发明，可以在绝缘基板上获得具有可以控制其晶界，晶粒尺寸和晶体取向并且通过结晶形成的膜粗糙度和晶体缺陷已经降低的高品质多晶半导体膜的半导体器件。

64. 发明授权

US06670936B1 Liquid crystal display 有权
标题翻译：液晶显示器
公开(公告)号：US06670936B1
公开(公告)日：2003-12-30
申请号：US09582936
申请日：2000-07-07
申请人： Hajime Akimoto , Mutsuko Hatano
发明人： Hajime Akimoto , Mutsuko Hatano
IPC分类号： G09G336
CPC分类号： G09G3/3688 , G09G3/3648 , G09G3/3655
摘要： An object is to eliminate fixed pattern noise due to unevenness or variation of the threshold voltages in DA converters and buffer circuits, when forming a pixel portion integrated with a peripheral driver circuit, including the DA converters, by using polycrystalline Si TFT. For that purpose, a pixel common electrodes is provided independently for each of a signal line, and an output of the buffer circuit is connected to both the common electrode and the signal electrode through a switch. With this, the variation of the threshold voltages in the buffer circuits are cancelled between the common electrode and the signal electrode, thereby enabling to remove the above-mentioned fixed pattern noise therefrom.
摘要翻译：目的是通过使用多晶硅TFT来形成与包括DA转换器的外围驱动电路集成的像素部分时，由于DA转换器和缓冲电路中的阈值电压的不均匀性或变化而消除固定模式噪声。为此目的，对信号线各自独立地设置像素公共电极，并且缓冲电路的输出通过开关连接到公共电极和信号电极两者。由此，缓冲电路中的阈值电压的变化在公共电极和信号电极之间被取消，从而能够消除上述固定图案噪声。

65. 发明授权

US5729046A Superconducting device having pinning regions 失效
标题翻译：具有钉扎区域的超导装置
公开(公告)号：US5729046A
公开(公告)日：1998-03-17
申请号：US462356
申请日：1995-06-05
申请人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
发明人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
IPC分类号： H01L39/22 , C01G1/00 , C01G3/00 , C23C14/08 , C30B29/22 , H01B12/00 , H01L39/24 , H01L39/00
CPC分类号： H01L39/2496 , H01L39/225 , H01L39/228 , H01L2924/0002 , Y10S505/70 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors. The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.
摘要翻译：超导装置包括具有超导体的结构的类型 - 正常导体（或半导体） - 超导体，以及在超导体之间具有超导弱连接部分的类型。构成超导装置的超导体由含有选自Ba，Sr，Ca，Mg和Ra中的至少一种元素的钙钛矿型和K2NiF4型结晶结构体的氧化物构成。选自La，Y，Ce，Sc，Sm，Eu，Er，Gd，Ho，Yb，Nd，Pr，Lu和Tb中的至少一种元素; 铜另外，超导体的晶体的c轴基本上垂直于流过该超导体的电流的方向。

66. 发明授权

US5550389A Superconducting device 失效
标题翻译：超导装置
公开(公告)号：US5550389A
公开(公告)日：1996-08-27
申请号：US171869
申请日：1993-12-22
申请人： Toshikazu Nishino , Mutsuko Hatano , Haruhiro Hasegawa , Hideaki Nakane , Ushio Kawabe , Kazuo Saitoh , Mitsuo Suga , Kazumasa Takagi
发明人： Toshikazu Nishino , Mutsuko Hatano , Haruhiro Hasegawa , Hideaki Nakane , Ushio Kawabe , Kazuo Saitoh , Mitsuo Suga , Kazumasa Takagi
IPC分类号： H01L39/14 , H01L29/06
CPC分类号： H01L39/145
摘要： A superconducting device low in power dissipation and high in operating speed is fabricated by use of a combination of a superconductor material and a semiconductor material. The superconducting device having a low power dissipation and high operating speed characteristic according to the present invention is suitable for configuring a large-scale integrated circuit.
摘要翻译：通过使用超导体材料和半导体材料的组合来制造功耗低且工作速度高的超导装置。根据本发明的具有低功耗和高工作速度特性的超导装置适用于配置大规模集成电路。

67. 发明授权

US5272358A Superconducting device 失效
标题翻译：超导装置
公开(公告)号：US5272358A
公开(公告)日：1993-12-21
申请号：US796885
申请日：1991-11-25
申请人： Toshikazu Nishino , Ushio Kawabe , Mutsuko Hatano
发明人： Toshikazu Nishino , Ushio Kawabe , Mutsuko Hatano
IPC分类号： H01L39/22
CPC分类号： H01L39/228
摘要： In a superconducting device wherein the value of a superconducting current to flow between two superconducting electrodes provided in contact with a semiconductor is controlled by a control electrode provided between the superconducting electrodes, high impurity concentration regions are formed within the semiconductor so as to lie in contact with the superconducting electrodes and to extend to under ends of the control electrode.
摘要翻译：在超导装置中，通过设置在超导电极之间的控制电极来控制与半导体接触的两个超导电极之间流过的超导电流的值，在半导体内形成高的杂质浓度区域以便接触与超导电极并延伸到控制电极的下端。

68. 发明授权

US08759126B2 Image display device and the method for manufacturing the same 有权
标题翻译：图像显示装置及其制造方法
公开(公告)号：US08759126B2
公开(公告)日：2014-06-24
申请号：US13092226
申请日：2011-04-22
申请人： Takahide Kuranaga , Takashi Hattori , Naoya Okada , Mutsuko Hatano
发明人： Takahide Kuranaga , Takashi Hattori , Naoya Okada , Mutsuko Hatano
IPC分类号： H01L21/00 , G02F1/1333
CPC分类号： H01L51/5253 , G02F1/133351 , H01L51/5256 , H01L2251/566
摘要： An image display device comprises: a first substrate having flexure property; a first resin layer which is attached to the first substrate and over which thin film transistors are located; a barrier layer which comprises an inorganic film covering a surface of the resin layer; and a first thin film layer and a second thin film layer which are located so as to sandwich the first resin layer with the barrier layer disposed therebetween.
摘要翻译：图像显示装置包括：具有弯曲特性的第一基板; 第一树脂层，其附接到第一基板并且薄膜晶体管位于该第一树脂层上; 阻挡层，其包含覆盖所述树脂层的表面的无机膜; 以及第一薄膜层和第二薄膜层，所述第一薄膜层和第二薄膜层被定位成夹在其间设置有阻挡层的第一树脂层。

69. 发明申请

US20110294244A1 METHOD FOR MANUFACTURING DISPLAY DEVICE 审中-公开
标题翻译：制造显示装置的方法
公开(公告)号：US20110294244A1
公开(公告)日：2011-12-01
申请号：US13114074
申请日：2011-05-24
申请人： Takashi HATTORI , Takahide Kuranaga , Naoya Okada , Mutsuko Hatano
发明人： Takashi HATTORI , Takahide Kuranaga , Naoya Okada , Mutsuko Hatano
IPC分类号： H01L33/08
CPC分类号： H01L27/1218 , H01L27/1262 , H01L2227/326
摘要： Provided is a method of manufacturing a display device, including: forming a polymer layer which includes an organic material on a principal surface side of a support substrate; forming one of a semiconductor circuit and a display circuit on the polymer layer; irradiating the polymer layer from the support substrate side with light having a wavelength that is absorbed in the polymer layer, to thereby separate the polymer layer from the support substrate; one of thinning and removing the polymer layer; and adhering a first substrate to one of a surface of the polymer layer and a face where the polymer layer has been provided.
摘要翻译：提供一种制造显示装置的方法，包括：在支撑基板的主表面侧上形成包含有机材料的聚合物层; 在聚合物层上形成半导体电路和显示电路之一; 用具有在聚合物层中吸收的波长的光从支撑衬底侧照射聚合物层，从而将聚合物层与支撑衬底分离; 一个减薄和去除聚合物层; 并将第一基板粘合到聚合物层的表面和设置有聚合物层的面之一。

70. 发明授权

US07969520B2 Liquid crystal display device and dielectric film usable in the liquid crystal display device 有权
标题翻译：可用于液晶显示装置的液晶显示装置和电介质膜
公开(公告)号：US07969520B2
公开(公告)日：2011-06-28
申请号：US12500639
申请日：2009-07-10
申请人： Daisuke Ryuzaki , Kazuyoshi Torii , Mutsuko Hatano , Daisuke Sonoda , Toshiki Kaneko
发明人： Daisuke Ryuzaki , Kazuyoshi Torii , Mutsuko Hatano , Daisuke Sonoda , Toshiki Kaneko
IPC分类号： G02F1/136
CPC分类号： G02F1/1362 , G02F1/133345 , G02F2202/02 , H01L21/02126 , H01L21/02222 , H01L21/02282 , H01L21/3122 , H01L21/31633 , H01L21/3185 , Y10T428/10
摘要： The present invention provides a liquid crystal display device with high image visibility at low power consumption and produced at low cost by using an interlayer dielectric film, which has low dielectric constant, high heat-resistant property, high optical transmissivity, high film thickness and high flattening property produced at low cost. An organic siloxane dielectric film is used as an interlayer dielectric film of the liquid crystal display device. A ratio of nitrogen content to silicon content (Ni content/Si content) in the interlayer dielectric film is controlled to 0.04 or more in the element ratio. The limiting film thickness to suppress and limit the cracking caused by the thickening of the interlayer dielectric film is set to 1.5 μm or more.
摘要翻译：本发明提供一种低功耗的高图像可见度的液晶显示装置，通过使用具有低介电常数，高耐热性，高透光率，高膜厚和高的层间绝缘膜以低成本生产的液晶显示装置以低成本生产的扁平性。使用有机硅氧烷介电膜作为液晶显示装置的层间电介质膜。层间电介质膜中的氮含量与硅含量（Ni含量/ Si含量）的比例以元素比控制在0.04以上。抑制和限制由层间绝缘膜增厚引起的开裂的限制膜厚设定为1.5μm以上。

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