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61. 发明授权

US4701819A Magnetic head to effect high density magnetic recording 失效
标题翻译：磁头实现高密度磁记录
公开(公告)号：US4701819A
公开(公告)日：1987-10-20
申请号：US777744
申请日：1985-09-19
申请人： Osamu Inagoya , Hideo Fujiwara , Takeshi Tottori , Minoru Yamano , Noriyuki Kumasaka , Shigekazu Otomo , Mitsuhiro Kudo , Juiti Morikawa , Kiyoshi Ishihara , Akira Usui , Masashi Hayashi
发明人： Osamu Inagoya , Hideo Fujiwara , Takeshi Tottori , Minoru Yamano , Noriyuki Kumasaka , Shigekazu Otomo , Mitsuhiro Kudo , Juiti Morikawa , Kiyoshi Ishihara , Akira Usui , Masashi Hayashi
IPC分类号： G11B5/127 , G11B5/187 , G11B5/21 , G11B5/265 , G11B5/31 , G11B5/22 , G11B5/42
CPC分类号： G11B5/3103 , G11B5/127 , G11B5/1878 , G11B5/21 , G11B5/265
摘要： A magnetic head having a pair of core halves each combined through a magnetic gap, each of the core halves comprising a core base having slanted side surfaces on the side opposing to the magnetic gap and a magnetic thin layer formed on the surfaces of the core base on the side opposing the magnetic gap with magnetic material of high saturation magnetic flux density, the minimum value of the sum of products of vertical cross sectional areas of the respective magnetic paths of each of the core halves except for the path of the magnetic gap and the respective saturation magnetic flux densities of the respective parts is greater than the product of the area of the magnetic gap and the saturation magnetic flux density of the magnetic thin layer.
摘要翻译：一种磁头，其具有通过磁隙组合的一对芯半部，每个磁芯半部包括在与磁隙相对的一侧上具有倾斜的侧表面的芯基部和形成在芯基部的表面上的磁性薄层在与磁饱和磁通密度高的磁性材料相对的一侧上，除了磁隙的路径之外的每个磁芯半部的各个磁路的垂直横截面积的乘积之和的最小值，以及各部分的各自的饱和磁通密度大于磁性薄层的面积和磁性薄层的饱和磁通密度的乘积。

62. 发明授权

US10623314B2 Switch system, and monitoring centralized control method 有权
公开(公告)号：US10623314B2
公开(公告)日：2020-04-14
申请号：US13824356
申请日：2011-09-26
申请人： Kazushi Kubota , Masanori Takashima , Yoji Suzuki , Masashi Hayashi , Tetsu Izawa
发明人： Kazushi Kubota , Masanori Takashima , Yoji Suzuki , Masashi Hayashi , Tetsu Izawa
IPC分类号： H04L12/56 , H04L12/721 , H04L12/931 , H04L12/26
CPC分类号： H04L45/70 , H04L43/026 , H04L45/38 , H04L49/35
摘要： A switch system allows free change of a grain degree of monitoring without being conscious of a routing control. For example, a control protocol of a transmitter is used based on the open flow (OpenFlow) technique to control the monitoring function of the switch system, and the centralized control of the monitoring can be realized as the whole network and the monitoring result is reflected on the routing control. Here, the switch has a flow table for packet transfer and a flow table for monitoring. Both of the tables are searched to one packet and a multi-hit operation is performed to execute the operation of each of the entries. That is, both the tables are searched and the packet is transferred according to corresponding flow entries.

63. 发明授权

US09577931B2 Switching system, switching control system, and storage medium 有权
标题翻译：开关系统，开关控制系统和存储介质
公开(公告)号：US09577931B2
公开(公告)日：2017-02-21
申请号：US13821344
申请日：2011-07-21
申请人： Yoji Suzuki , Masanori Takashima , Kazushi Kubota , Tetsu Izawa , Masashi Hayashi
发明人： Yoji Suzuki , Masanori Takashima , Kazushi Kubota , Tetsu Izawa , Masashi Hayashi
IPC分类号： H04L12/28 , H04L12/743 , H04L12/935 , H04L12/24 , H04L12/851 , H04L12/741
CPC分类号： H04L45/7457 , H04L41/0806 , H04L45/74 , H04L45/745 , H04L47/24 , H04L49/3009
摘要： A switch system realizes extension of the number of entries of an open flow table by using tables in a switch as existing resources. Specifically, the switch configures an open flow table by logically combining a plurality of tables, each of which defines processing to a given packet, based on a condition and a processing content defined in each table. The switch refers to the open flow table to determine the processing content to a reception packet. The switch executes the processing of the reception packet based on the determined processing content.
摘要翻译：交换机系统通过使用交换机中的表作为现有资源来实现对开放流表的条目数量的扩展。具体地，交换机基于每个表中定义的条件和处理内容逻辑组合多个表来构造开放流表，每个表定义对给定分组的处理。交换机是指开放流表以确定到接收分组的处理内容。交换机基于确定的处理内容执行接收分组的处理。

64. 发明授权

US09025854B2 Wafer defect inspection apparatus and method for inspecting a wafer defect 有权
标题翻译：晶圆缺陷检查装置及检查晶圆缺陷的方法
公开(公告)号：US09025854B2
公开(公告)日：2015-05-05
申请号：US13103159
申请日：2011-05-09
申请人： Masashi Hayashi
发明人： Masashi Hayashi
IPC分类号： G06K9/00 , G01N21/86 , G01V8/00 , G01N21/95 , G06T7/00 , H01L21/66
CPC分类号： G06T7/001 , G01N21/9505 , G06T7/0004 , G06T7/136 , G06T2207/10048 , G06T2207/10144 , G06T2207/10152 , G06T2207/30148 , H01L22/12 , H04N5/2353 , H04N5/33
摘要： It is an object to obtain an image of a wafer that is suitable for a defect inspection in an efficient manner.It is judged whether or not an average gray level of an image of a wafer W that is an inspection target and that has been imaged by the light receiving part 2 is in the defect detectable range. A control processing part 6a is configured to modify an exposure time in imaging the wafer W and to obtain an image of the wafer W again by the light receiving part 2 in the case in which it is decided that an average gray level of an image of the wafer W is not in a defect detectable range, and an image processing part 6b is configured to carry out a defect inspection based on an image of the wafer W in the case in which it is decided that an average gray level of the image of the wafer W is in the defect detectable range.
摘要翻译：本发明的目的在于，以有效的方式获得适合缺陷检查的晶片的图像。判断作为检查对象的已经被受光部2成像的晶片W的图像的平均灰度级是否在缺陷可检测范围内。控制处理部分6a被配置为在成像晶片W时修改曝光时间，并且在确定图像的平均灰度级的情况下，再次由光接收部分2获得晶片W的图像晶片W不处于缺陷可检测范围，并且图像处理部分6b被配置为在确定图像的平均灰度级的情况下基于晶片W的图像执行缺陷检查晶片W处于缺陷可检测范围内。

65. 发明授权

US08582334B2 Semiconductor device, power converter and method for controlling the power converter 有权
标题翻译：半导体器件，功率转换器和控制功率转换器的方法
公开(公告)号：US08582334B2
公开(公告)日：2013-11-12
申请号：US13583825
申请日：2012-04-16
申请人： Masashi Hayashi , Masanori Ogawa
发明人： Masashi Hayashi , Masanori Ogawa
IPC分类号： H02M7/537 , H03K17/82
CPC分类号： H03K17/063 , H01L23/4824 , H01L29/0619 , H01L29/0696 , H01L29/1608 , H01L29/78 , H01L29/7828 , H01L29/7838 , H01L2924/0002 , H02M7/003 , H02M7/537 , H03K17/12 , H03K17/164 , H01L2924/00
摘要： Disclosed is a semiconductor device which includes: a semiconductor element 200 including a first metal-insulator-semiconductor field-effect transistor 200a and a second metal-insulator-semiconductor field-effect transistor 200b which is connected in parallel with the first metal-insulator-semiconductor field-effect transistor; and a control section which controls the operation of the semiconductor element. The control section controls the semiconductor element so that in a forward direction mode, current flows in a forward direction through the first and second metal-insulator-semiconductor field-effect transistors but that in a reverse direction mode, current flows in the reverse direction through the first metal-insulator-semiconductor field-effect transistor but does not flow through the second metal-insulator-semiconductor field-effect transistor.
摘要翻译：公开了一种半导体器件，其包括：半导体元件200，其包括第一金属 - 绝缘体半导体场效应晶体管200a和与第一金属绝缘体 - 半导体场效应晶体管200a并联连接的第二金属 - 半导体场效应晶体管; 以及控制部，其控制半导体元件的动作。控制部分控制半导体元件，使得在正向模式中，电流沿正向流过第一和第二金属 - 绝缘体 - 半导体场效应晶体管，但是在反向模式中，电流沿相反方向通过第一金属 - 绝缘体 - 半导体场效应晶体管，但不流过第二金属 - 绝缘体 - 半导体场效应晶体管。

66. 发明授权

US08076736B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08076736B2
公开(公告)日：2011-12-13
申请号：US12518124
申请日：2008-02-12
申请人： Masashi Hayashi , Shin Hashimoto
发明人： Masashi Hayashi , Shin Hashimoto
IPC分类号： H01L29/78
CPC分类号： H01L29/7802 , H01L21/0485 , H01L21/049 , H01L29/1608 , H01L29/45 , H01L29/4975 , H01L29/66068
摘要： A semiconductor device according to the present invention comprises a silicon carbide semiconductor substrate (1) including a silicon carbide layer (2); a high-concentration impurity region (4) provided in the silicon carbide layer (2); an ohmic electrode (9) electrically connected with the high-concentration impurity region (4); a channel region electrically connected with the high-concentration impurity region; a gate insulating layer (14) provided on the channel region; and a gate electrode (7) provided on the gate insulating layer (14). The ohmic electrode (9) contains an alloy of titanium, silicon and carbon, and the gate electrode (7) contains titanium silicide.
摘要翻译：根据本发明的半导体器件包括：碳化硅半导体衬底（1），其包括碳化硅层（2）; 设置在碳化硅层（2）中的高浓度杂质区（4）; 与高浓度杂质区（4）电连接的欧姆电极（9）。与高浓度杂质区电连接的沟道区域; 设置在所述沟道区上的栅极绝缘层（14）以及设置在所述栅极绝缘层（14）上的栅电极（7）。欧姆电极（9）含有钛，硅和碳的合金，栅电极（7）含有硅化钛。

67. 发明申请

US20110102813A1 MOVEMENT DETECTION APPARATUS, MOVEMENT DETECTION METHOD, AND RECORDING APPARATUS 审中-公开
标题翻译：移动检测装置，运动检测方法和记录装置
公开(公告)号：US20110102813A1
公开(公告)日：2011-05-05
申请号：US12911571
申请日：2010-10-25
申请人： Masashi Hayashi , Hitoshi Nishikori
发明人： Masashi Hayashi , Hitoshi Nishikori
IPC分类号： G06K15/02
CPC分类号： B41J11/42
摘要： A movement detection apparatus acquires a displacement direction and an amount of displacement of a template region in the first image data that is displaced in the second image data in a direction orthogonal to a direction of a movement of an object. Based on the acquired displacement direction and the amount of displacement, a position at which the template pattern is clipped in the direction is set.
摘要翻译：移动检测装置获取在与物体的移动方向正交的方向上在第二图像数据中移位的第一图像数据中的模板区域的位移方向和位移量。基于获取的位移方向和位移量，设定模板图案在该方向上被裁剪的位置。

68. 发明申请

US20100207125A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100207125A1
公开(公告)日：2010-08-19
申请号：US12676415
申请日：2008-10-24
申请人： Masao Uchida , Kazuya Utsunomiya , Masashi Hayashi
发明人： Masao Uchida , Kazuya Utsunomiya , Masashi Hayashi
IPC分类号： H01L29/24 , H01L21/04
CPC分类号： H01L29/66068 , H01L21/0485 , H01L29/45 , H01L29/6606 , H01L29/7828 , H01L29/872
摘要： A semiconductor device according to the present invention includes: a silicon carbide substrate (11) that has a principal surface and a back surface; a semiconductor layer (12), which has been formed on the principal surface of the silicon carbide substrate; and a back surface ohmic electrode layer (1d), which has been formed on the back surface of the silicon carbide substrate. The back surface ohmic electrode layer (1d) includes: a reaction layer (1da), which is located closer to the back surface of the silicon carbide substrate and which includes titanium, silicon and carbon; and a titanium nitride layer (1db), which is located more distant from the back surface of the silicon carbide substrate.
摘要翻译：根据本发明的半导体器件包括：具有主表面和后表面的碳化硅衬底（11）; 半导体层（12），其形成在所述碳化硅衬底的主表面上; 以及形成在碳化硅基板的背面上的背面欧姆电极层（1d）。背面欧姆电极层（1d）包括：反应层（1da），其位于更靠近碳化硅基板的背面，并且包括钛，硅和碳; 和位于比碳化硅衬底的背面更远的氮化钛层（1db）。

69. 发明申请

US20090101918A1 SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US20090101918A1
公开(公告)日：2009-04-23
申请号：US12300352
申请日：2007-05-17
申请人： Masao Uchida , Koichi Hashimoto , Masashi Hayashi
发明人： Masao Uchida , Koichi Hashimoto , Masashi Hayashi
IPC分类号： H01L29/12 , H01L21/04
CPC分类号： H01L29/7802 , H01L21/046 , H01L29/0696 , H01L29/1608 , H01L29/41741 , H01L29/66068 , H01L29/7828
摘要： A semiconductor device includes: a semiconductor layer 10; a semiconductor region 15s of a first conductivity type defined on the surface 10s of the semiconductor layer; a semiconductor region 14s of a second conductivity type defined on the surface 10s of the semiconductor layer to surround the semiconductor region 15s; and a conductor 19 with a conductive surface 19s to contact with the semiconductor regions 15s and 14s. The semiconductor layer 10 includes silicon carbide. At least one of the semiconductor region 15s and the conductive surface 19s is not circular. The semiconductor region 15s and the conductive surface 19s are shaped such that as the degree of misalignment between the conductive surface 19s and the semiconductor region 15s increases from zero through one-third of the width of the conductive surface 19s, a portion of the profile of the conductive surface 19s that crosses the semiconductor region 15s has smoothly changing lengths.
摘要翻译：半导体器件包括：半导体层10; 限定在半导体层的表面10s上的第一导电类型的半导体区域15s; 限定在半导体层的表面10s上以包围半导体区域15s的第二导电类型的半导体区域14s; 以及具有导电表面19s以与半导体区域15s和14s接触的导体19。半导体层10包括碳化硅。半导体区域15s和导电表面19s中的至少一个不是圆形的。半导体区域15s和导电表面19s被成形为使得当导电表面19s和半导体区域15s之间的未对准程度从零增加到导电表面19s的宽度的三分之一时，轮廓的一部分穿过半导体区域15s的导电表面19s具有平滑变化的长度。

70. 外观设计

USD573732S1 Rear light for a motor vehicle 有权
公开(公告)号：USD573732S1
公开(公告)日：2008-07-22
申请号：US29254630
申请日：2006-02-27
申请人： Hideki Suzuki , Kousuke Takahashi , Masashi Hayashi
设计人： Hideki Suzuki , Kousuke Takahashi , Masashi Hayashi

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