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61. 发明授权

US5371389A Heterojunction bipolar transistor with base layer having graded bandgap 失效
标题翻译：异质结双极晶体管，基极层具有梯度带隙
公开(公告)号：US5371389A
公开(公告)日：1994-12-06
申请号：US101685
申请日：1993-08-04
申请人： Toshinobu Matsuno , Atsushi Nakagawa , Takashi Hirose , Kaoru Inoue
发明人： Toshinobu Matsuno , Atsushi Nakagawa , Takashi Hirose , Kaoru Inoue
IPC分类号： H01L29/205 , H01L21/331 , H01L29/10 , H01L29/73 , H01L29/737 , H01L29/161 , H01L29/225
CPC分类号： H01L29/7371 , H01L29/1004 , Y10S148/072 , Y10S438/936
摘要： A base layer interposed between an n-type GaAs collector layer and an n-type AlGaAs emitter layer is composed of a p-type InAlGaAs. From a collector/base interface to an emitter/base interface, an InAs composition of the base layer is decreased and a concentration of carbon as a p-type impurity thereof is increased so as to obtain a built-in internal field intensity in the base layer by a cooperative effect of the graded-bandgap and the impurity concentration gradient, thus reducing a base transit time of electrons. The base layer is fabricated according to MOMBE using TMG as a gallium source, controlling the InAs composition, so that a desired carbon concentration gradient is automatically formed. Thereby, a high performance heterojunction bipolar transistor with an increased built-in internal field intensity in the base layer is obtained.
摘要翻译：介于n型GaAs集电极层和n型AlGaAs发射极层之间的基极层由p型InAlGaAs构成。从集电极/基极界面到发射极/基极界面，降低了基极层的InAs组分，并且增加了作为p型杂质的碳浓度，以便在基底中获得内置的内部场强通过渐变带隙和杂质浓度梯度的协同效应，从而减少电子的基极传播时间。使用TMG作为镓源，根据MOMBE制造基层，控制InAs组成，从而自动形成所需的碳浓度梯度。从而获得了在基极层中具有增加的内部内部场强的高性能异质结双极晶体管。

62. 发明授权

US09337361B2 Photoelectric conversion device and manufacturing method thereof 有权
标题翻译：光电转换装置及其制造方法
公开(公告)号：US09337361B2
公开(公告)日：2016-05-10
申请号：US13299768
申请日：2011-11-18
申请人： Takashi Hirose , Naoto Kusumoto
发明人： Takashi Hirose , Naoto Kusumoto
IPC分类号： H01L31/00 , H01L31/0224 , H01L31/0747 , H01L31/18
CPC分类号： H01L31/022425 , H01L31/022433 , H01L31/0747 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： In a method for manufacturing a photoelectric conversion device, a method for forming an embedded electrode is provided, which is suitable for a groove with a high aspect ratio. A first groove and a second groove intersecting with the first groove are formed in a crystalline silicon substrate, an i-type first silicon semiconductor layer, a second silicon semiconductor layer with one conductivity type, and a light-transmitting conductive film are sequentially formed on the surface of the crystalline silicon substrate and on the grooves, a conductive resin is injected into the first groove, and the second groove is filled with the conductive resin by a capillary action to form a grid electrode.
摘要翻译：在制造光电转换装置的方法中，提供了一种用于形成嵌入电极的方法，其适用于具有高纵横比的凹槽。在晶体硅衬底中形成与第一沟槽交叉的第一沟槽和第二沟槽，在i型第一硅半导体层，具有一种导电类型的第二硅半导体层和透光导电膜上依次形成晶体硅衬底的表面和槽上，将导电树脂注入到第一槽中，并且通过毛细作用填充导电树脂以形成栅极。

63. 发明授权

US08827690B2 Hollow body molding device 有权
标题翻译：中空体成型装置
公开(公告)号：US08827690B2
公开(公告)日：2014-09-09
申请号：US13988079
申请日：2011-11-30
申请人： Tomoyoshi Sakamoto , Minoru Ojiro , Takashi Hirose , Yasuhiko Hata , Hiroki Katagiri
发明人： Tomoyoshi Sakamoto , Minoru Ojiro , Takashi Hirose , Yasuhiko Hata , Hiroki Katagiri
IPC分类号： B29C45/04
CPC分类号： B29C45/2628 , B29C45/0055 , B29C45/1704 , B29C45/1711 , B29C45/261 , B29C45/2669 , B29C2045/0087 , B29C2045/1719
摘要： A hollow body molding device having molten resin injected into a main cavity, fluid is pressure-injected through a pressure port after the injection of molten resin, a floating core moves to the outlet side, the molten resin is extruded from the outlet simultaneously with the movement of the floating core, and a hollow molded body is molded, the hollow body molding device having a floating core storage portion connected to the main cavity and stores the floating core moved by the pressurized fluid, an auxiliary cavity stores molten resin discharged from the main cavity and the floating core storage portion, communication passages and which communicate the floating core storage portion and the auxiliary cavity with each other; and an opening and closing means that opens and closes the communication passages by sliding movement. In the hollow body molding device, each inlet cross-sectional area B of the communication passages is specified.
摘要翻译：将具有熔融树脂注入主腔的中空体成型装置，在注入熔融树脂之后，通过压力口对流体进行压力注入，浮芯向出口侧移动，熔融树脂与出口同时挤出浮芯的移动和中空的成型体被模制，该中空体成型装置具有连接到主腔的浮动芯部存储部，并存储由加压流体移动的浮动芯，辅助空腔存储从主空腔和浮芯存储部分，连通通道，并将浮芯存储部分和辅助腔体彼此连通; 以及通过滑动运动来打开和关闭连通通道的打开和关闭装置。在空心体成形装置中，规定连通路的各入口截面积B.

64. 发明申请

US20130236591A1 HOLLOW BODY MOLDING DEVICE 有权
标题翻译：中空身体模具装置
公开(公告)号：US20130236591A1
公开(公告)日：2013-09-12
申请号：US13988079
申请日：2011-11-30
申请人： Tomoyoshi Sakamoto , Minoru Ojiro , Takashi Hirose , Yasuhiko Hata , Hiroki Katagiri
发明人： Tomoyoshi Sakamoto , Minoru Ojiro , Takashi Hirose , Yasuhiko Hata , Hiroki Katagiri
IPC分类号： B29C45/26
CPC分类号： B29C45/2628 , B29C45/0055 , B29C45/1704 , B29C45/1711 , B29C45/261 , B29C45/2669 , B29C2045/0087 , B29C2045/1719
摘要： The present invention provides a hollow body molding device which allows easy confirmation of passage of a floating core through a molded body and facilitates quality control at the site.In a hollow body molding device in which a molten resin is injected into a main cavity 1, a pressurized fluid is pressure-injected through a pressure port 3 after the injection of the molten resin, a floating core 2 is moved to the outlet side, the molten resin is extruded from the outlet simultaneously with the movement of the floating core 2, and a hollow molded body 12 is molded, the hollow body molding device is provided with a floating core storage portion 6 which is connected to the main cavity 1 and stores the floating core 2 moved by the pressurized fluid, an auxiliary cavity 10 which stores a molten resin discharged from the main cavity 1 and the floating core storage portion 6, communication passages 7 and 9 which communicate the floating core storage portion 6 and the auxiliary cavity 10 with each other; and an opening and closing means 8 that opens and closes the communication passages 7 and 9 by sliding movement. In the hollow body molding device, each inlet cross-sectional area B of the communication passages 7 and 9 is B
摘要翻译：本发明提供了一种中空体成型装置，其容易地确认浮芯通过模制体，并且便于现场的质量控制。在将熔融树脂注入到主腔1中的中空体成形装置中，在注入熔融树脂之后，通过压力口3对加压流体进行压力注入，浮芯2向出口侧移动，熔融树脂与浮芯2的移动同时从出口挤出，并且模制中空成型体12，中空体成型装置设置有与主腔1连接的浮动芯部容纳部6和存储由加压流体移动的浮芯2，存储从主腔1和浮芯收纳部6排出的熔融树脂的辅助空腔10，连通浮动芯部容纳部6和辅助空气的辅助空间腔10彼此; 以及通过滑动运动来打开和关闭连通通道7和9的打开和关闭装置8。在中空体成型装置中，连通路7,9的各入口截面积B为B

65. 发明申请

US20120161130A1 ELECTRODE, PHOTOELECTRIC CONVERSION DEVICE USING THE ELECTRODE, AND MANUFACTURING METHOD THEREOF 有权
标题翻译：电极，使用电极的光电转换装置及其制造方法
公开(公告)号：US20120161130A1
公开(公告)日：2012-06-28
申请号：US13325166
申请日：2011-12-14
申请人： Yuji ODA , Takashi Hirose , Koichiro Tanaka , Sho Kato , Emi Koezuka
发明人： Yuji ODA , Takashi Hirose , Koichiro Tanaka , Sho Kato , Emi Koezuka
IPC分类号： H01L31/0224 , H01L21/28 , H01L29/41 , H01L31/20
CPC分类号： H01L31/022433 , H01L31/035281 , H01L31/18 , Y02E10/50
摘要： A minute electrode, a photoelectric conversion device including the minute electrode, and manufacturing methods thereof are provided. A plurality of parallel groove portions and a region sandwiched between the groove portions are formed in a substrate, and a conductive resin is supplied to the groove portions and the region and is fixed, whereby the groove portions are filled with the conductive resin and the region is covered with the conductive resin. The supplied conductive resin is not expanded outward, and the electrode with a designed width can be formed. Part of the electrode is formed over the region sandwiched between the groove portions, thus, the area of a cross section in the short axis direction can be large, and a low resistance in the long axis direction can be obtained.
摘要翻译：提供微电极，包括微电极的光电转换装置及其制造方法。在基板上形成多个平行的槽部和夹在槽部之间的区域，并且将导电树脂供给到槽部和该区域并被固定，由此槽部填充有导电树脂和区域被导电树脂覆盖。所提供的导电树脂不向外扩张，并且可以形成具有设计宽度的电极。电极的一部分形成在夹在槽部之间的区域上，因此，短轴方向的截面积可以大，并且可以获得长轴方向的低电阻。

66. 发明申请

US20120084501A1 Information processing apparatus, tape device, and computer-readable medium storing program 有权
标题翻译：信息处理装置，磁带装置和计算机可读介质存储程序
公开(公告)号：US20120084501A1
公开(公告)日：2012-04-05
申请号：US13137861
申请日：2011-09-19
申请人： Hiroyuki Watanabe , Hideaki Takahashi , Takashi Hirose , Kinya Saito , Reisuke Nakagawa
发明人： Hiroyuki Watanabe , Hideaki Takahashi , Takashi Hirose , Kinya Saito , Reisuke Nakagawa
IPC分类号： G06F12/00
CPC分类号： G06F11/3485 , G06F11/1456 , G06F11/1458 , G06F11/1461 , G06F11/3409 , G06F2201/81 , G06F2201/88
摘要： An acquisition unit of an information processing apparatus acquires access information indicating the state of access to a volume of a disk device at least for data read. A determination unit detects a volume in which a sequential read was performed, on the basis of the acquired access information, and determines the volume as a backup source for a backup.
摘要翻译：信息处理装置的获取单元至少为了读取数据而获取表示对盘装置的卷的访问状态的访问信息。确定单元基于所获取的访问信息来检测执行顺序读取的卷，并将该卷确定为备份的备份源。

67. 发明授权

US08008169B2 Method for manufacturing photoelectric conversion device 有权
标题翻译：制造光电转换装置的方法
公开(公告)号：US08008169B2
公开(公告)日：2011-08-30
申请号：US12341699
申请日：2008-12-22
申请人： Hideto Ohnuma , Takashi Hirose
发明人： Hideto Ohnuma , Takashi Hirose
IPC分类号： H01L21/84
CPC分类号： H01L31/0236 , H01L31/02363 , H01L31/076 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A fragile layer is formed in a single crystal silicon substrate, a first impurity silicon layer is formed on the one surface side in the single crystal silicon substrate, and a first electrode is formed thereover. After one surface of a supporting substrate and the first electrode are bonded, the single crystal silicon substrate is separated along the fragile layer to form a single crystal silicon layer over the supporting substrate. Crystal defect repair treatment or crystal defect elimination treatment of the single crystal silicon layer is performed; then, epitaxial growth is conducted on the single crystal silicon layer by activating a source gas containing at least a silane-based gas with plasma generated at atmospheric pressure or near atmospheric pressure. A second impurity silicon layer is formed on a surface side in the single crystal silicon layer which is epitaxial grown.
摘要翻译：在单晶硅衬底中形成脆性层，在单晶硅衬底的一个表面侧形成第一杂质硅层，并在其上形成第一电极。在支撑基板的一个表面和第一电极接合之后，沿着脆性层分离单晶硅基板，以在支撑基板上形成单晶硅层。执行晶体缺陷修复处理或单晶硅层的晶体缺陷消除处理; 然后通过在大气压或接近大气压下产生的等离子体激活至少含有硅烷系气体的源气体，在单晶硅层上进行外延生长。在外延生长的单晶硅层的表面侧形成第二杂质硅层。

68. 发明申请

US20110000199A1 CONSTRUCTION MACHINE 有权
标题翻译：建筑机械
公开(公告)号：US20110000199A1
公开(公告)日：2011-01-06
申请号：US12920831
申请日：2009-05-09
申请人： Masanori Ezawa , Shouhei Kamiya , Takashi Hirose , Yasushi Arai
发明人： Masanori Ezawa , Shouhei Kamiya , Takashi Hirose , Yasushi Arai
IPC分类号： F01N3/021
CPC分类号： F01N3/0237 , B01D46/0002 , B01D46/0086 , B01D53/944 , B01D2257/404 , E02F9/0866 , E02F9/2066 , E02F9/2095 , F01N3/035 , F01N13/008 , F01N13/18 , F01N13/1894 , F01N2450/30 , F01N2470/18 , F01N2560/05 , F01N2590/08
摘要： An upstream cylinder (21) and a downstream cylinder (24) are fixedly mounted to a support member (19), and a filter cylinder (26) is provided mountably and dismountably between the cylinders (21) and (24). In consequence, only the filter cylinder (26) can be dismounted with the cylinders (21) and (24) left as they are on the support member (19), so that the maintenance operation of a particulate matter removing filter (28) can be performed easily. In addition, pressure conduits (32) and (33) and a pressure sensor (34) of a pressure detection unit (31) for detecting a clogged state of the particulate matter removing filter (28) are disposed at positions offset from a moving path (30) of the filter cylinder (26). In consequence, only the filter cylinder (26) can be easily mounted or dismounted without being obstructed by the pressure conduits (32) and (33) and the pressure sensor (34).
摘要翻译：上游筒（21）和下游筒（24）固定地安装在支撑件（19）上，并且过滤筒（26）可安装和拆卸地设置在缸体（21）和（24）之间。因此，只有过滤筒（26）能够随着气缸（21）和（24）原样保持在支撑构件（19）上而被拆卸，使得颗粒物去除过滤器（28）的维护操作可以容易执行此外，用于检测颗粒物去除过滤器（28）的堵塞状态的压力检测单元（31）的压力导管（32）和压力传感器（33）以及位于偏移于移动路径（30）。因此，只有过滤筒（26）可以容易地被安装或拆卸而不受压力导管（32）和（33）和压力传感器（34）的阻碍。

69. 发明申请

US20100139775A1 FLOW RATE RANGE VARIABLE TYPE FLOW RATE CONTROL APPARATUS 有权
标题翻译：流量范围可变型流量控制装置
公开(公告)号：US20100139775A1
公开(公告)日：2010-06-10
申请号：US11913277
申请日：2006-06-22
申请人： Tadahiro Ohmi , Masahito Saito , Shoichi Hino , Tsuyoshi Shimazu , Kazuyuki Miura , Kouji Nishino , Masaaki Nagase , Katsuyuki Sugita , Kaoru Hirata , Ryousuke Dohi , Takashi Hirose , Tsutomu Shinohara , Nobukazu Ikeda , Tomokazu Imai , Toshihide Yoshida , Hisashi Tanaka
发明人： Tadahiro Ohmi , Masahito Saito , Shoichi Hino , Tsuyoshi Shimazu , Kazuyuki Miura , Kouji Nishino , Masaaki Nagase , Katsuyuki Sugita , Kaoru Hirata , Ryousuke Dohi , Takashi Hirose , Tsutomu Shinohara , Nobukazu Ikeda , Tomokazu Imai , Toshihide Yoshida , Hisashi Tanaka
IPC分类号： F15D1/00
CPC分类号： G05D7/0641 , G01F1/363 , G01F1/6842 , G01F1/6847 , G01F5/005 , G01F7/005 , G05D7/0635 , G05D7/0647 , G05D23/1927 , Y10T137/0379 , Y10T137/7759 , Y10T137/776 , Y10T137/8593 , Y10T137/86734 , Y10T137/86815 , Y10T137/87265 , Y10T137/87314 , Y10T137/8741 , Y10T137/87499 , Y10T137/87684
摘要： A pressure type flow control device enabling a reduction in size and an installation cost by accurately controlling the flow of a fluid in a wide flow range. Specifically, the flow of the fluid flowing in an orifice (8) is calculated as Qc=KP1 (K is a proportionality factor) or Qc=KP2m(P1−P2)n (K is a proportionality factor and m and n are constants) by using a pressure P1 on the upstream side of the orifice and a pressure P2 on the downstream side of the orifice. A fluid passage between the downstream side of the control valve of the flow control device and a fluid feed pipe is formed of at least two or more fluid passages positioned parallel with each other. Orifices with different fluid flow characteristics are interposed in the fluid passages positioned parallel with each other. For the control of the fluid in a small flow area, the fluid in the small flow area is allowed to flow to one orifice. For the control of the flow in the large flow area, the fluid in the large flow area is allowed to flow to the other orifice by switching the fluid passages.
摘要翻译：一种压力式流量控制装置，通过精确地控制在大流量范围内的流体的流动，能够减小尺寸和安装成本。具体地说，在孔（8）中流动的流体的流量被计算为Qc = KP1（K是比例因子）或Qc = KP2m（P1-P2）n（K是比例因子，m和n是常数）通过使用孔口上游侧的压力P1和孔口下游侧的压力P2。在流量控制装置的控制阀的下游侧和流体供给管之间的流体通道由彼此平行定位的至少两个或更多个流体通道形成。具有不同流体流动特性的孔口插入彼此平行定位的流体通道中。为了控制小流量区域中的流体，允许小流量区域中的流体流到一个孔口。为了控制大流量区域中的流动，通过切换流体通道允许大流量区域中的流体流向另一个孔口。

70. 发明申请

US20090152550A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20090152550A1
公开(公告)日：2009-06-18
申请号：US12335234
申请日：2008-12-15
申请人： Hideto Ohnuma , Takashi Hirose
发明人： Hideto Ohnuma , Takashi Hirose
IPC分类号： H01L29/786 , H01L21/70 , H01L21/31
CPC分类号： H01L21/3105 , H01L21/31604 , H01L21/32055 , H01L29/41733 , H01L29/4908 , H01L29/66765 , H01L29/78696
摘要： An object is to provide a semiconductor device including a microcrystalline semiconductor film with favorable quality and a method for manufacturing the semiconductor device. In a thin film transistor formed using a microcrystalline semiconductor film, yttria-stabilized zirconia having a fluorite structure is formed in the uppermost layer of a gate insulating film in order to improve quality of a microcrystalline semiconductor film to be formed in the initial stage of deposition. The microcrystalline semiconductor film is deposited on the yttria-stabilized zirconia, so that the microcrystalline semiconductor film around an interface with a base particularly has favorable crystallinity while by crystallinity of the base.
摘要翻译：目的在于提供一种具有质量好的微晶半导体膜的半导体装置及其制造方法。在使用微晶半导体膜形成的薄膜晶体管中，在栅极绝缘膜的最上层形成具有萤石结构的氧化钇稳定的氧化锆，以提高在初始沉积时形成的微晶半导体膜的质量。微晶半导体膜沉积在氧化钇稳定的氧化锆上，使得与碱的界面周围的微晶半导体膜特别具有良好的结晶度，同时通过碱的结晶度。

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