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61. 发明授权

US06956265B2 Semiconductor device and method for manufacturing partial SOI substrates 失效
标题翻译：用于制造部分SOI衬底的半导体器件和方法
公开(公告)号：US06956265B2
公开(公告)日：2005-10-18
申请号：US10675950
申请日：2003-10-02
申请人： Hajime Nagano , Ichiro Mizushima
发明人： Hajime Nagano , Ichiro Mizushima
IPC分类号： H01L21/76 , H01L21/02 , H01L21/20 , H01L21/265 , H01L21/822 , H01L21/8234 , H01L21/84 , H01L27/01 , H01L27/04 , H01L27/08 , H01L27/088 , H01L27/10 , H01L27/12 , H01L29/786 , H01L31/0392
CPC分类号： H01L27/1203 , H01L21/84
摘要： There is closed a semiconductor device which comprises a semiconductor substrate including an SOI region where a first insulating film is buried, and a non-SOI region, the semiconductor substrate being provided with a boundary region formed between the SOI region and the non-SOI region and having a second insulating film buried therein, the second insulating film being inclined upward from the SOI region side toward the non-SOI region side, the second insulating film having a thickness smaller than the thickness of the first insulating film and being tapered from the SOI region side to the non-SOI region side, a pair of element isolating insulating regions separately formed in the non-SOI region of semiconductor substrate and defining element regions, a pair of impurity diffusion regions formed in the element regions, and a gate electrode formed via a gate insulating film in the element region of the semiconductor substrate.
摘要翻译：封闭半导体器件，其包括半导体衬底，该半导体衬底包括掩埋有第一绝缘膜的SOI区域和非SOI区域，该半导体衬底设置有形成在SOI区域与非SOI区域之间的边界区域并且具有埋置在其中的第二绝缘膜，所述第二绝缘膜从所述SOI区域侧向非SOI区域侧向上倾斜，所述第二绝缘膜的厚度小于所述第一绝缘膜的厚度， SOI区域侧，分离地形成在半导体衬底的非SOI区域中并限定元件区域的一对元件隔离绝缘区域，形成在元件区域中的一对杂质扩散区域以及栅极电极通过半导体衬底的元件区域中的栅极绝缘膜形成。

62. 发明授权

US06855976B2 Semiconductor device using partial SOI substrate and manufacturing method thereof 失效
标题翻译：使用部分SOI衬底的半导体器件及其制造方法
公开(公告)号：US06855976B2
公开(公告)日：2005-02-15
申请号：US10078344
申请日：2002-02-21
申请人： Hajime Nagano , Shinichi Nitta , Hisato Oyamatsu
发明人： Hajime Nagano , Shinichi Nitta , Hisato Oyamatsu
IPC分类号： H01L21/76 , H01L21/762 , H01L21/8234 , H01L21/8242 , H01L27/08 , H01L27/088 , H01L27/10 , H01L27/108 , H01L27/12 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/10894 , H01L21/76251 , H01L21/76264 , H01L21/76275 , H01L21/76278 , H01L21/76283 , H01L21/84 , H01L27/10829 , H01L27/10861 , H01L27/1087 , H01L27/10897 , H01L27/1203 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a first semiconductor layer formed above a first region of a supporting substrate with a buried oxide layer disposed therebetween and a second semiconductor layer formed on a second region of the supporting substrate. An interface between the supporting substrate and the second semiconductor layer is placed in a position deeper than the buried oxide layer.
摘要翻译：半导体器件包括形成在支撑衬底的第一区域上方的第一半导体层，其中设置有掩埋氧化物层，以及形成在支撑衬底的第二区域上的第二半导体层。支撑衬底和第二半导体层之间的界面被放置在比掩埋氧化物层更深的位置。

63. 发明授权

US07763931B2 Nonvolatile semiconductor memory device and method of manufacturing the same 失效
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US07763931B2
公开(公告)日：2010-07-27
申请号：US11965297
申请日：2007-12-27
申请人： Tomoharu Hashiguchi , Hajime Nagano
发明人： Tomoharu Hashiguchi , Hajime Nagano
IPC分类号： H01L29/788
CPC分类号： H01L27/115 , H01L27/11521 , H01L27/11524
摘要： A nonvolatile semiconductor memory including a semiconductor substrate having an upper surface; a plurality of memory cell transistors formed in the semiconductor substrate, each memory cell transistor including a gate electrode having a gate insulating layer on the upper surface of the semiconductor substrate, a floating gate electrode layer on the gate insulating layer, an inter-gate insulating layer on the floating gate electrode layer, and a control gate electrode layer on the inter-gate insulating layer; a first oxide-based insulating film formed above the upper surface of the semiconductor substrate between the gate electrodes, and including an upper surface as high or higher than that of the floating gate electrode layer but lower than that of the control gate electrode layer; a nitride-based insulating film containing boron formed on the first oxide-based insulating film and the control gate layer; and a second oxide-based insulating film formed on the nitride-based insulating film.
摘要翻译：一种非易失性半导体存储器，包括具有上表面的半导体衬底; 形成在半导体衬底中的多个存储单元晶体管，每个存储单元晶体管包括在半导体衬底的上表面上具有栅极绝缘层的栅极电极，栅极绝缘层上的浮置栅极电极层，栅极间绝缘层在栅极绝缘层上的控制栅极电极层，第一氧化物基绝缘膜，形成在栅电极之间的半导体衬底的上表面上方，并且包括高于浮栅电极层的上表面或高于控制栅电极层的上表面的上表面; 含有形成在第一氧化物系绝缘膜和控制栅极层上的硼的氮化物系绝缘膜; 以及形成在所述氮化物系绝缘膜上的第二氧化物系绝缘膜。

64. 发明申请

US20100015948A1 BASE STATION AND MOBILE TERMINAL 有权
标题翻译：基站和移动终端
公开(公告)号：US20100015948A1
公开(公告)日：2010-01-21
申请号：US12395445
申请日：2009-02-27
申请人： Hajime Nagano
发明人： Hajime Nagano
IPC分类号： H04W60/00 , H04M1/66
CPC分类号： H04W60/04 , G08B25/008 , H04W84/045
摘要： To provide a security technique (a base station and a mobile terminal) for easily guarding a building such as a house for an average family or a small office at a low price by using a cellular phone terminal and a small base station (femtocell). A base station (FCL) of a mobile communication system placed in a building includes a communication unit (140) for communicating with the mobile communication system via a communication line; an obtaining unit (123) for obtaining an opened state of a fitting set to an opening of the building from the fitting or a switch placed near the fitting for detecting the opened state of the fitting; a registering unit (121) for registering information on a mobile terminal that uses the base station; a processing unit (122) for processing location registration of the mobile terminal; and a control unit (120) for controlling the communication unit to transmit a predetermined message to a predetermined addressee via the communication line if information received from the mobile terminal does not match the information registered in the registering unit when the location registration of the mobile terminal is performed by the processing unit after the opened state of the fitting is obtained.
摘要翻译：为了提供一种安全技术（基站和移动终端），通过使用蜂窝电话终端和小型基站（femtocell），以便于以较低的价格容易地保护一般家庭或小型办公室的建筑物。放置在建筑物中的移动通信系统的基站（FCL）包括通信单元（140），用于经由通信线路与移动通信系统进行通信; 获取单元（123），用于从配件或设置在配件附近的开关中获得对建筑物的开口设置的配件的打开状态，以检测配件的打开状态; 注册单元，用于在使用所述基站的移动终端上登记信息; 处理单元（122），用于处理移动终端的位置登记; 以及控制单元（120），用于当移动终端的位置登记时，控制通信单元经由通信线路将预定消息发送到预定的收件人，如果从移动终端接收到的信息与注册单元中登记的信息不匹配在获得配件的打开状态之后由处理单元执行。

65. 发明授权

US07561858B2 Wireless communication terminal 失效
标题翻译：无线通信终端
公开(公告)号：US07561858B2
公开(公告)日：2009-07-14
申请号：US11535883
申请日：2006-09-27
申请人： Hajime Nagano
发明人： Hajime Nagano
IPC分类号： H04B1/04
CPC分类号： G06F1/206 , Y02D10/16
摘要： A wireless communication terminal includes a transmission power control unit that changes transmission power; a first storage unit that pre-stores an association of a transmission power value with a difference between a terminal temperature and an ambient temperature; a temperature detection unit that detects a temperature of the terminal to obtain a terminal temperature value; a transmission power detection unit that detects a current transmission power value; a calculation unit that calculates a current ambient temperature value near the terminal; and a temperature estimation unit that estimates a terminal temperature value corresponding to an intended transmission power value based on the current ambient temperature value calculated by the calculation unit, the transmission power value to which the transmission power is changed, and the association of the first storage unit.
摘要翻译：无线通信终端包括改变发送功率的发送功率控制单元; 第一存储单元，其预先存储发送功率值与终端温度与环境温度之间的差的关联; 温度检测单元，其检测所述端子的温度以获得端子温度值; 发送功率检测单元，其检测当前发送功率值; 计算在终端附近的当前环境温度值的计算单元; 以及温度估计单元，其基于由计算单元计算出的当前环境温度值，发送功率变化的发送功率值和第一存储器的关联来估计与预期发送功率值对应的终端温度值单元。

66. 发明申请

US20060141414A1 Gas combustion treatment method and apparatus therefor 审中-公开
公开(公告)号：US20060141414A1
公开(公告)日：2006-06-29
申请号：US11362148
申请日：2006-02-27
申请人： Masahiro Harada , Makoto Susaki , Kazuo Ishida , Hajime Nagano , Masahiro Hirano , Hiroshi Suzumura , Shintaro Honjo , Yoshinori Koyama , Katsuhiko Yokohama , Mitsugi Suehiro
发明人： Masahiro Harada , Makoto Susaki , Kazuo Ishida , Hajime Nagano , Masahiro Hirano , Hiroshi Suzumura , Shintaro Honjo , Yoshinori Koyama , Katsuhiko Yokohama , Mitsugi Suehiro
IPC分类号： F23D14/62
CPC分类号： B01D53/58 , B01D53/52 , F23G7/065 , F23J7/00 , F23J15/006 , F23J2215/10 , Y02P20/129
摘要： A gas combustion treatment method for the combustion treatment of an ammonia-containing gas and a hydrogen sulfide-containing gas, the method comprising a first combustion treatment step in which the ammonia-containing gas, together with a fuel, is introduced and burned; a nitrogen oxide reduction step downstream of the first combustion treatment step, in which a portion of the hydrogen sulfide-containing gas or the ammonia-containing gas is introduced and the nitrogen oxides produced in the first combustion treatment step are reduced in a reducing atmosphere; and a second combustion treatment step downstream of the nitrogen oxide reduction step, in which the remaining hydrogen sulfide-containing gas, together with air, is introduced and burned. The present invention provides a combustion apparatus suitable for use as a combustion furnace for off-gases resulting from the wet purification of coal gasification gas.

67. 发明申请

US20050093066A1 Semiconductor device using partial SOI substrate and manufacturing method thereof 失效
标题翻译：使用部分SOI衬底的半导体器件及其制造方法
公开(公告)号：US20050093066A1
公开(公告)日：2005-05-05
申请号：US11013910
申请日：2004-12-17
申请人： Hajime Nagano , Shinichi Nitta , Hisato Oyamatsu
发明人： Hajime Nagano , Shinichi Nitta , Hisato Oyamatsu
IPC分类号： H01L21/76 , H01L21/762 , H01L21/8234 , H01L21/8242 , H01L27/08 , H01L27/088 , H01L27/10 , H01L27/108 , H01L27/12
CPC分类号： H01L27/10894 , H01L21/76251 , H01L21/76264 , H01L21/76275 , H01L21/76278 , H01L21/76283 , H01L21/84 , H01L27/10829 , H01L27/10861 , H01L27/1087 , H01L27/10897 , H01L27/1203 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a first semiconductor layer formed above a first region of a supporting substrate with a buried oxide layer disposed therebetween and a second semiconductor layer formed on a second region of the supporting substrate. An interface between the supporting substrate and the second semiconductor layer is placed in substantially the same depth position as the undersurface of the buried oxide layer or in a position deeper than the buried oxide layer.
摘要翻译：半导体器件包括形成在支撑衬底的第一区域上方的第一半导体层，其中设置有掩埋氧化物层，以及形成在支撑衬底的第二区域上的第二半导体层。支撑衬底和第二半导体层之间的界面被放置在与掩埋氧化物层的下表面基本相同的深度位置，或者位于比掩埋氧化物层更深的位置。

68. 发明授权

US06770119B2 Mercury removal method and system 有权
标题翻译：汞去除方法和系统
公开(公告)号：US06770119B2
公开(公告)日：2004-08-03
申请号：US10233526
申请日：2002-09-04
申请人： Masahiro Harada , Shintaro Honjo , Makoto Suzaki , Kazuo Ishida , Hajime Nagano , Susumu Okino
发明人： Masahiro Harada , Shintaro Honjo , Makoto Suzaki , Kazuo Ishida , Hajime Nagano , Susumu Okino
IPC分类号： B01D5314
CPC分类号： C10K1/16 , B01D53/14 , B01D53/64 , B01D2257/602 , C10K1/085 , C10K1/10
摘要： The present invention provides a mercury removal method which can effectively remove very small amounts of mercury components present in a gas during wet gas purification such as coal or heavy oil gasification gas purification and petroleum refining. A mercury removal method for the removal of mercury present in a gas, the method comprising the steps of bringing a gas containing at least mercury and not less than 10 ppm of hydrogen sulfide into gas-liquid contact with an absorbing fluid under pressurized conditions so as to cause mercury to pass into the absorbing fluid; flashing the mercury-containing absorbing fluid under lower-pressure conditions to separate it into gaseous components and liquid components; and removing the mercury contained in the separated gaseous components by adsorption to an adsorbent.
摘要翻译：本发明提供了一种除汞方法，其可以有效地去除在湿气净化中例如煤或重油气化气净化和石油精炼中的气体中存在的非常少量的汞成分。一种用于除去存在于气体中的汞的汞去除方法，该方法包括以下步骤：在加压条件下使至少包含汞和不少于10ppm硫化氢的气体与吸收液体气液接触，以便使汞进入吸收液; 在低压条件下闪烁含汞吸收液，将其分离成气态组分和液体组分; 并且通过吸附到吸附剂上除去分离的气态组分中所含的汞。

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