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61. 发明授权

US08551871B2 Method of fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08551871B2
公开(公告)日：2013-10-08
申请号：US13240662
申请日：2011-09-22
申请人： Ichiro Mizushima , Shinji Mori , Masahiko Murano , Tsutomu Sato , Takashi Nakao , Hiroshi Itokawa
发明人： Ichiro Mizushima , Shinji Mori , Masahiko Murano , Tsutomu Sato , Takashi Nakao , Hiroshi Itokawa
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02636 , H01L21/02381 , H01L21/02532 , H01L21/0262
摘要： A method of fabricating a semiconductor device according to one embodiment includes: exposing a surface of a semiconductor substrate to a halogen-containing gas that contains at least one of Si and Ge, the semiconductor substrate being provided with a member comprising an oxide and consisting mainly of Si; and exposing the surface of the semiconductor substrate to an atmosphere containing at least one of a Si-containing gas not containing halogen and a Ge-containing gas not containing halogen after starting exposure of the surface of the semiconductor substrate to the halogen-containing gas, thereby epitaxially growing a crystal film containing at least one of Si and Ge on the surface.
摘要翻译：根据一个实施例的制造半导体器件的方法包括：将半导体衬底的表面暴露于含有Si和Ge中的至少一种的含卤素的气体，所述半导体衬底设置有包含氧化物的构件，主要由的Si; 以及将半导体衬底的表面开始暴露于含卤素气体之后，将半导体衬底的表面暴露于含有不含卤素的含Si气体和不含卤素的含Ge气体中的至少一种的气氛中，从而在表面上外延生长含有Si和Ge中的至少一种的晶体膜。

62. 发明授权

US08546786B2 Stacked multiple cell nonvolatile memory device 有权
标题翻译：堆叠多单元非易失性存储器件
公开(公告)号：US08546786B2
公开(公告)日：2013-10-01
申请号：US13344680
申请日：2012-01-06
申请人： Yasuhito Yoshimizu , Fumiki Aiso , Atsushi Fukumoto , Takashi Nakao
发明人： Yasuhito Yoshimizu , Fumiki Aiso , Atsushi Fukumoto , Takashi Nakao
IPC分类号： H01L45/00 , H01L29/06
CPC分类号： H01L27/11578 , H01L27/11582 , H01L27/2409 , H01L27/2481 , H01L29/792 , H01L29/7926 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/148
摘要： A nonvolatile memory device includes: a substrate; a stacked structure member including a plurality of dielectric films and a plurality of electrode films alternately stacked on the substrate and including a through-hole penetrating through the plurality of the dielectric films and the plurality of the electrode films in a stacking direction of the plurality of the dielectric films and the plurality of the electrode films; a semiconductor pillar provided in the through-hole; and a charge storage layer provided between the semiconductor pillar and each of the plurality of the electrode films. At least one of the dielectric films includes a film generating one of a compressive stress and a tensile stress, and at least one of the electrode films includes a film generating the other of the compressive stress and the tensile stress.
摘要翻译：非易失性存储器件包括：衬底; 包括多个电介质膜和交替层叠在所述基板上的多个电极膜的堆叠结构构件，并且包括贯穿所述多个电介质膜的多个电极膜和所述多个所述电极膜的多个电介质膜和多个电极膜; 设置在所述通孔中的半导体柱; 以及设置在所述半导体柱与所述多个所述电极膜中的每一个之间的电荷存储层。电介质膜中的至少一个包括产生压缩应力和拉伸应力之一的膜，并且至少一个电极膜包括产生另一个压缩应力和拉伸应力的膜。

63. 发明授权

US08520485B2 Recording apparatus and servo control method 失效
标题翻译：记录装置和伺服控制方法
公开(公告)号：US08520485B2
公开(公告)日：2013-08-27
申请号：US13461423
申请日：2012-05-01
申请人： Kenji Yamamoto , Takashi Nakao
发明人： Kenji Yamamoto , Takashi Nakao
IPC分类号： G11B7/0065
CPC分类号： G11B7/0908 , B82Y10/00 , G11B7/24038 , G11B7/2405
摘要： A recording apparatus includes the following elements. A recording light source emits pulse laser light for recording. A first light source emits first CW laser light. An irradiation optical system irradiates an optical recording medium with the pulse laser light and the first CW laser light via an objective lens in the state in which the optical axis of the first CW laser light is tilted with respect to the optical axis of the pulse laser light. A reception optical system outputs, to a first light receiver, a returned light portion of the first CW laser light which has been reflected by a reflection surface formed on the optical recording medium and which has been input through the objective lens. A focus servo controller performs focus servo control for the objective lens on the basis of a first reception signal obtained by the first light receiver.
摘要翻译：记录装置包括以下元件。记录光源发射用于记录的脉冲激光。第一光源发射第一CW激光。照射光学系统在第一CW激光的光轴相对于脉冲激光的光轴倾斜的状态下经由物镜照射具有脉冲激光和第一CW激光的光记录介质光。接收光学系统向第一光接收器输出由被形成在光记录介质上并被输入通过物镜的反射面反射的第一CW激光的返回光部分。聚焦伺服控制器基于由第一光接收器获得的第一接收信号，对物镜进行聚焦伺服控制。

64. 发明申请

US20120090535A1 Method of Fabricating Semiconductor Device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120090535A1
公开(公告)日：2012-04-19
申请号：US13240662
申请日：2011-09-22
申请人： Ichiro Mizushima , Shinji Mori , Masahiko Murano , Tsutomu Sato , Takashi Nakao , Hiroshi Itokawa
发明人： Ichiro Mizushima , Shinji Mori , Masahiko Murano , Tsutomu Sato , Takashi Nakao , Hiroshi Itokawa
IPC分类号： C30B25/02
CPC分类号： H01L21/02636 , H01L21/02381 , H01L21/02532 , H01L21/0262
摘要： A method of fabricating a semiconductor device according to one embodiment includes: exposing a surface of a semiconductor substrate to a halogen-containing gas that contains at least one of Si and Ge, the semiconductor substrate being provided with a member comprising an oxide and consisting mainly of Si; and exposing the surface of the semiconductor substrate to an atmosphere containing at least one of a Si-containing gas not containing halogen and a Ge-containing gas not containing halogen after starting exposure of the surface of the semiconductor substrate to the halogen-containing gas, thereby epitaxially growing a crystal film containing at least one of Si and Ge on the surface.
摘要翻译：根据一个实施例的制造半导体器件的方法包括：将半导体衬底的表面暴露于含有Si和Ge中的至少一种的含卤素的气体，所述半导体衬底设置有包含氧化物的构件，主要由的Si; 以及将半导体衬底的表面开始暴露于含卤素气体之后，将半导体衬底的表面暴露于含有不含卤素的含Si气体和不含卤素的含Ge气体中的至少一种的气氛中，从而在表面上外延生长含有Si和Ge中的至少一种的晶体膜。

65. 发明申请

US20120034754A1 SEMICONDUCTOR DEVICE MANUFACATURING METHOD AND SILICON OXIDE FILM FORMING METHOD 审中-公开
标题翻译：半导体器件制造方法和氧化硅膜形成方法
公开(公告)号：US20120034754A1
公开(公告)日：2012-02-09
申请号：US13272457
申请日：2011-10-13
申请人： Kazuaki Iwasawa , Takeshi Hoshi , Keisuke Nakazawa , Shogo Matsuo , Takashi Nakao , Ryu Kato , Tetsuya Kai , Katsuyuki Sekine
发明人： Kazuaki Iwasawa , Takeshi Hoshi , Keisuke Nakazawa , Shogo Matsuo , Takashi Nakao , Ryu Kato , Tetsuya Kai , Katsuyuki Sekine
IPC分类号： H01L21/76
CPC分类号： H01L21/76229
摘要： A semiconductor device manufacturing method has forming element isolation trenches in a semiconductor substrate, forming a silicon compound film in insides of the element isolation trenches in order to embed the element isolation trenches, conducting a first oxidation processing at a first temperature to reform a surface of the silicon compound film to a volatile matter emission preventing layer which permits passage of an oxidizing agent and impurities and which does not permit passage of a volatile matter containing silicon atoms, and conducting a second oxidation processing at a second temperature which is higher than the first temperature to form a coated silicon oxide film inside the element isolation trenches.
摘要翻译：半导体器件制造方法在半导体衬底中具有形成元件隔离沟槽，在元件隔离沟槽的内部形成硅化合物膜，以便嵌入元件隔离沟槽，在第一温度下进行第一氧化处理以使表面所述硅化合物膜能够通过氧化剂和杂质而不允许含有硅原子的挥发性物质通过的挥发性物质排放防止层，并且在比所述第一温度高的第二温度下进行第二氧化处理温度以在元件隔离槽内形成被覆氧化硅膜。

66. 发明授权

US08109171B2 Parallel mechanism 有权
标题翻译：平行机制
公开(公告)号：US08109171B2
公开(公告)日：2012-02-07
申请号：US12514661
申请日：2007-09-14
申请人： Takashi Nakao , Tatsuhiko Nishida , Hideaki Nakanishi , Daigoro Nakamura
发明人： Takashi Nakao , Tatsuhiko Nishida , Hideaki Nakanishi , Daigoro Nakamura
IPC分类号： B25J17/02
CPC分类号： B25J17/0266 , B25J9/0051 , Y10T74/20317 , Y10T74/20329
摘要： An end effecter is positioned with high precision by stabilizing its attitude. Included are arms each having a pair of rods arranged in parallel, a bracket having the end effecter attached thereto and retained by the pair of rods, ball joints and each including a first joint element having a ball and displaceably connecting the bracket with the arm and a second joint element having a socket for retaining the ball, a connecting member for connecting the pair of parallel rods together and restricting rotation of the rods about an axis that is parallel to the longitudinal direction thereof, and a biasing member for providing a biasing force for retaining the ball in the socket.
摘要翻译：通过稳定其姿态，终端执行器以高精度定位。包括的臂具有平行布置的一对杆，具有附接到其上并由一对杆，球接头保持的端部执行器的支架，并且每个支架包括具有球的第一关节元件并且可移动地将支架与臂连接，具有用于保持球的插座的第二关节元件，用于将所述一对平行杆连接在一起并限制杆围绕其纵向方向平行的轴的旋转的连接构件，以及用于提供偏压力用于将球保持在插座中。

67. 发明授权

US08080463B2 Semiconductor device manufacturing method and silicon oxide film forming method 有权
标题翻译：半导体器件制造方法和氧化硅膜形成方法
公开(公告)号：US08080463B2
公开(公告)日：2011-12-20
申请号：US12691483
申请日：2010-01-21
申请人： Kazuaki Iwasawa , Takeshi Hoshi , Keisuke Nakazawa , Shogo Matsuo , Takashi Nakao , Ryu Kato , Tetsuya Kai , Katsuyuki Sekine
发明人： Kazuaki Iwasawa , Takeshi Hoshi , Keisuke Nakazawa , Shogo Matsuo , Takashi Nakao , Ryu Kato , Tetsuya Kai , Katsuyuki Sekine
IPC分类号： H01L21/76
CPC分类号： H01L21/76229
摘要： A semiconductor device manufacturing method has forming element isolation trenches in a semiconductor substrate, forming a silicon compound film in insides of the element isolation trenches in order to embed the element isolation trenches, conducting a first oxidation processing at a first temperature to reform a surface of the silicon compound film to a volatile matter emission preventing layer which permits passage of an oxidizing agent and impurities and which does not permit passage of a volatile matter containing silicon atoms, and conducting a second oxidation processing at a second temperature which is higher than the first temperature to form a coated silicon oxide film inside the element isolation trenches.
摘要翻译：半导体器件制造方法在半导体衬底中具有形成元件隔离沟槽，在元件隔离沟槽的内部形成硅化合物膜，以便嵌入元件隔离沟槽，在第一温度下进行第一氧化处理以使表面所述硅化合物膜能够通过氧化剂和杂质而不允许含有硅原子的挥发性物质通过的挥发性物质排放防止层，并且在比所述第一温度高的第二温度下进行第二氧化处理温度以在元件隔离槽内形成被覆氧化硅膜。

68. 发明授权

US08043945B2 Method of fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08043945B2
公开(公告)日：2011-10-25
申请号：US12401453
申请日：2009-03-10
申请人： Ichiro Mizushima , Shinji Mori , Masahiko Murano , Tsutomu Sato , Takashi Nakao , Hiroshi Itokawa
发明人： Ichiro Mizushima , Shinji Mori , Masahiko Murano , Tsutomu Sato , Takashi Nakao , Hiroshi Itokawa
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02636 , H01L21/02381 , H01L21/02532 , H01L21/0262
摘要： A method of fabricating a semiconductor device according to one embodiment includes: exposing a surface of a semiconductor substrate to a halogen-containing gas that contains at least one of Si and Ge, the semiconductor substrate being provided with a member comprising an oxide and consisting mainly of Si; and exposing the surface of the semiconductor substrate to an atmosphere containing at least one of a Si-containing gas not containing halogen and a Ge-containing gas not containing halogen after starting exposure of the surface of the semiconductor substrate to the halogen-containing gas, thereby epitaxially growing a crystal film containing at least one of Si and Ge on the surface.
摘要翻译：根据一个实施例的制造半导体器件的方法包括：将半导体衬底的表面暴露于含有Si和Ge中的至少一种的含卤素的气体，所述半导体衬底设置有包含氧化物的构件，主要由的Si; 以及将半导体衬底的表面开始暴露于含卤素气体之后，将半导体衬底的表面暴露于含有不含卤素的含Si气体和不含卤素的含Ge气体中的至少一种的气氛中，从而在表面上外延生长含有Si和Ge中的至少一种的晶体膜。

69. 发明授权

US08017989B2 Nonvolatile semiconductor memory device and method of manufacturing the same 失效
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US08017989B2
公开(公告)日：2011-09-13
申请号：US12659703
申请日：2010-03-17
申请人： Yoshio Ozawa , Ichiro Mizushima , Takashi Nakao , Akihito Yamamoto , Takashi Suzuki , Masahiro Kiyotoshi
发明人： Yoshio Ozawa , Ichiro Mizushima , Takashi Nakao , Akihito Yamamoto , Takashi Suzuki , Masahiro Kiyotoshi
IPC分类号： H01L29/788
CPC分类号： H01L27/115 , H01L21/84 , H01L27/11521 , H01L27/11524 , H01L27/1203
摘要： A nonvolatile semiconductor memory device including a semiconductor substrate having a semiconductor layer and an insulating material provided on a surface thereof, a surface of the insulating material is covered with the semiconductor layer, and a plurality of memory cells provided on the semiconductor layer, the memory cells includes a first dielectric film provided by covering the surface of the semiconductor layer, a plurality of charge storage layers provided above the insulating material and on the first dielectric film, a plurality of second dielectric films provided on the each charge storage layer, a plurality of conductive layers provided on the each second dielectric film, and an impurity diffusion layer formed partially or overall at least above the insulating material and inside the semiconductor layer and at least a portion of a bottom end thereof being provided by an upper surface of the insulating material.
摘要翻译：一种非易失性半导体存储器件，包括具有半导体层和设置在其表面上的绝缘材料的半导体衬底，绝缘材料的表面被半导体层覆盖，并且设置在半导体层上的多个存储单元，存储器电池包括通过覆盖半导体层的表面而提供的第一电介质膜，设置在绝缘材料上方和第一电介质膜上的多个电荷存储层，设置在每个电荷存储层上的多个第二电介质膜，多个设置在每个第二电介质膜上的导电层，以及杂质扩散层，其部分或整体形成在绝缘材料的至少上方和半导体层的内部，并且其底端的至少一部分由绝缘体的上表面材料。

70. 发明授权

US07938406B2 Gasket 有权
标题翻译：垫片
公开(公告)号：US07938406B2
公开(公告)日：2011-05-10
申请号：US11988242
申请日：2006-07-05
申请人： Tomohisa Matsumoto , Takashi Nakao , Shuji Yoshitsune , Kazuki Takeno
发明人： Tomohisa Matsumoto , Takashi Nakao , Shuji Yoshitsune , Kazuki Takeno
IPC分类号： F16J15/02 , F16J15/10
CPC分类号： F16J15/106 , F02F11/007 , F16J15/061
摘要： A first gasket 10 is placed in a groove formed in a cam cover and seals a gap between a cylinder head and the cam cover. The first gasket 10 includes a pair of seal lips 13 which come into tight contact with the cylinder head and which are provided in parallel to each other, and a plurality of connecting portions 15 which are provided between the pair of seal lips 13, which are connected to each of the seal lips 13, and which hold a distance between the seal lips 13 near the connected portion.
摘要翻译：第一垫圈10放置在形成在凸轮盖中的凹槽中，并且密封气缸盖和凸轮盖之间的间隙。第一垫圈10包括与气缸盖紧密接触并且彼此平行设置的一对密封唇13和设置在该对密封唇13之间的多个连接部15，连接到每个密封唇13，并且在连接部分附近保持密封唇13之间的距离。

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