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61. 发明授权

US07294867B2 Semiconductor light generating device 有权
标题翻译：半导体发光装置
公开(公告)号：US07294867B2
公开(公告)日：2007-11-13
申请号：US11032230
申请日：2005-01-11
申请人： Katsushi Akita , Takao Nakamura , Hideki Hirayama
发明人： Katsushi Akita , Takao Nakamura , Hideki Hirayama
IPC分类号： H01L33/00 , H01L29/24
CPC分类号： H01L33/32 , H01L33/02 , H01L33/025 , H01L33/06
摘要： The semiconductor light generating device comprises a light generating region 3, a first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 and a second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7. In this semiconductor light generating device, the light generating region 3 is made of III-nitride semiconductor, and includes a InAlGaN semiconductor layer. The first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 is doped with a p-type dopant, such as magnesium, and is provided on the light generating region 3. The second AlX2Ga1-X2N semiconductor layer 7 has a p-type concentration smaller than the first AlX1Ga1-X1N semiconductor layer 5. The second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7 is provided between the light generating region 3 and the first AlX1Ga1-X1N semiconductor layer 5.
摘要翻译：半导体光产生装置包括发光区域3，第一Al X1 X 1 Ga 1-X1 N半导体（0 <= X 1 <= 1）层5和第二Al x X2 Ga 1-X2 N半导体（0 <= X 2 <= 1）层7。在该半导体发光元件中，发光区域3由III族氮化物半导体构成，具有InAlGaN半导体层。第一Al X1 X1＆lt; 1-X1＆gt; N半导体（0 <= X 1 <= 1）层5掺杂有诸如镁的p型掺杂剂，以及设置在发光区域3上。第二Al X2 X2 Ga 1-X2 N半导体层7的p型浓度比第一Al X1 Ga 1 -X1 N半导体层5。第二Al X2 X2 Ga 1-X2 N半导体（0 <= X 2 <= 1）层7设置在发光区3和第一Al _{X1 1-X1 _{N半导体层5。}}

62. 发明申请

US20070164306A1 Group III nitride semiconductor crystal and method of its manufacture, group III nitride semiconductor device and method of its manufacture, and light-emitting appliance 有权
标题翻译： III族氮化物半导体晶体及其制造方法，III族氮化物半导体器件及其制造方法以及发光器具
公开(公告)号：US20070164306A1
公开(公告)日：2007-07-19
申请号：US10598934
申请日：2005-05-13
申请人： Seiji Nakahata , Hideaki Nakahata , Koji Uematsu , Makoto Kiyama , Youichi Nagai , Takao Nakamura
发明人： Seiji Nakahata , Hideaki Nakahata , Koji Uematsu , Makoto Kiyama , Youichi Nagai , Takao Nakamura
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/007 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02645 , H01L33/0075 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/12032 , H01L2924/3011 , H01L2924/00014 , H01L2924/00
摘要： The invention provides Group III nitride semiconductor crystals of a size appropriate for semiconductor devices and methods for manufacturing the same, Group III nitride semiconductor devices and methods for manufacturing the same, and light-emitting appliances. A method of manufacturing a Group III nitride semiconductor crystal includes a process of growing at least one Group III nitride semiconductor crystal substrate on a starting substrate, a process of growing at least one Group III nitride semiconductor crystal layer on the Group III nitride semiconductor crystal substrate, and a process of separating a Group III nitride semiconductor crystal, constituted by the Group III nitride semiconductor crystal substrate and the Group III nitride semiconductor crystal layer, from the starting substrate, and is characterized in that the Group III nitride semiconductor crystal is 10 μm or more but 600 μm or less in thickness, and is 0.2 mm or more but 50 mm or less in width.
摘要翻译：本发明提供适合于半导体器件的尺寸的III族氮化物半导体晶体及其制造方法，III族氮化物半导体器件及其制造方法以及发光器具。制造III族氮化物半导体晶体的方法包括在起始衬底上生长至少一种III族氮化物半导体晶体衬底的工艺，在III族氮化物半导体晶体衬底上生长至少一种III族氮化物半导体晶体层的工艺以及从起始衬底分离由III族氮化物半导体晶体衬底和III族氮化物半导体晶体层构成的III族氮化物半导体晶体的工序，其特征在于，所述III族氮化物半导体晶体为10μm 以上且600μm以下，宽度为0.2mm以上且50mm以下。

63. 发明授权

US07072492B2 Method and apparatus for digital watermarking 失效
公开(公告)号：US07072492B2
公开(公告)日：2006-07-04
申请号：US10634584
申请日：2003-08-04
申请人： Hiroshi Ogawa , Takao Nakamura , Atsuki Tomioka , Youichi Takashima
发明人： Hiroshi Ogawa , Takao Nakamura , Atsuki Tomioka , Youichi Takashima
IPC分类号： G06K9/00
CPC分类号： G06T1/0028 , G06T2201/0052 , G06T2201/0083 , H04N1/32154 , H04N19/467
摘要： A method for embedding digital watermark data in digital data contents includes the steps of obtaining a frequency coefficient of block data of digital data contents, obtaining a complexity of the block data, obtaining an amount of transformation of the frequency coefficient from the complexity and the digital watermark data, and embedding the digital watermark data by transforming the frequency coefficient. In addition, a method for reading digital watermark data includes the steps of calculating a probability of reading ‘1’ or ‘0’ in a read bit sequence by using a test method on the basis of binary distribution, determining the presence or absence of digital watermark data according to the probability, and reconstituting digital watermark data. Another method includes the steps of performing soft decision in code theory by assigning weights to the digital watermark sequence with a weighting function, and reconstituting digital watermark data.

64. 发明授权

US07042016B2 Semiconductor optical device, method of forming contact in semiconductor optical device 失效
标题翻译：半导体光学器件，在半导体光学器件中形成接触的方法
公开(公告)号：US07042016B2
公开(公告)日：2006-05-09
申请号：US10808158
申请日：2004-03-23
申请人： Takao Nakamura , Hiroki Mori , Koji Katayama
发明人： Takao Nakamura , Hiroki Mori , Koji Katayama
IPC分类号： H01L27/15
CPC分类号： H01L33/04 , B82Y20/00 , H01L33/28 , H01L2224/48463
摘要： A semiconductor optical device comprises a superlattice contact semiconductor region and a metal electrode. The superlattice contact semiconductor region has a superlattice structure. The superlattice contact semiconductor region includes a II–VI compound semiconductor region and a II–VI compound semiconductor layer. The II–VI compound semiconductor region contains zinc, selenium and tellurium, and the II–VI compound semiconductor layer contains zinc and selenium. The metal electrode is provided on said superlattice contact semiconductor region and the metal electrode is electrically bonded to the first II–VI compound semiconductor layer.
摘要翻译：半导体光学器件包括超晶格接触半导体区域和金属电极。超晶格接触半导体区域具有超晶格结构。超晶格接触半导体区域包括II-VI族化合物半导体区域和II-VI族化合物半导体层。 II-VI化合物半导体区域含有锌，硒和碲，II-VI化合物半导体层含有锌和硒。金属电极设置在所述超晶格接触半导体区域上，金属电极与第一II-VI族化合物半导体层电连接。

65. 发明申请

US20050242354A1 Display device and method of manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20050242354A1
公开(公告)日：2005-11-03
申请号：US11174674
申请日：2005-07-06
申请人： Hideo Tanabe , Shigeo Shimomura , Makoto Ohkura , Masaaki Kurita , Yasukazu Kimura , Takao Nakamura
发明人： Hideo Tanabe , Shigeo Shimomura , Makoto Ohkura , Masaaki Kurita , Yasukazu Kimura , Takao Nakamura
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/76 , H01L29/786
CPC分类号： H01L27/1288 , G02F1/13454 , G02F1/136227 , G02F1/1368 , H01L27/1214 , H01L29/66757 , H01L29/78621 , H01L29/78633
摘要： Thin film transistors for a display device each include a semiconductor layer made of polysilicon having a channel region, drain and source regions at both sides of the channel region and doped with impurity of high concentration, and an LDD region arranged either between the drain region and the channel region or between the source region and the channel region and doped with impurity of low concentration. An insulation film is formed over an upper surface of the semiconductor layer and has a film thickness which decreases in a step-like manner as it extends to the channel region, the LDD region, the drain and the source regions; and a gate electrode is formed over the channel region through the insulation film. Such a constitution can enhance the numerical aperture and can suppress the magnitude of stepped portions in a periphery of the thin film transistor.
摘要翻译：用于显示装置的薄膜晶体管每个都包括由多晶硅制成的半导体层，该多晶硅具有沟道区，沟道区两侧的漏极和源极区，掺杂有高浓度的杂质;以及LDD区，其布置在漏极区和沟道区域或源极区域和沟道区域之间，并掺杂低浓度的杂质。在半导体层的上表面上形成绝缘膜，其厚度随其延伸到沟道区，LDD区，漏极和源极区而呈阶梯状减小; 并且通过绝缘膜形成在沟道区域上方的栅电极。这种结构可以提高数值孔径并且可以抑制薄膜晶体管的周边中的阶梯部分的大小。

66. 发明申请

US20050134107A1 Wheel cover for automotive vehicles 有权
标题翻译：汽车轮盖
公开(公告)号：US20050134107A1
公开(公告)日：2005-06-23
申请号：US11013712
申请日：2004-12-17
申请人： Takao Nakamura
发明人： Takao Nakamura
IPC分类号： B60B7/06 , B29C45/26 , B29L31/30 , B60B7/04 , B60B7/08 , B60B7/10
CPC分类号： B60B7/08
摘要： A wheel cover (10) has a plurality of vent holes (15) along an outer peripheral portion of a wheel cover body (11) at positions opposed to solid portions (8) between disc openings (6) in a road wheel (1). An engagement member (12) projects from the edge portion (16) of the vent hole (15), toward the wheel disc (2) of the road wheel (1). A disc-locking portion (18) projects from the tip end portion of the engagement member (12), toward the vent hole (15), and preferably includes locking protrusions (31, 32) engageable with a peripheral portion (7) of the disc opening (6), so that a retainer (24) is engaged with a retainer locking concave portion (35) to urge and hold the disc-locking portion (18).
摘要翻译：轮盖（10）在车轮（1）的盘形开口（6）之间的与实心部分（8）相对的位置处具有沿着轮盖主体（11）的外周部分的多个通气孔（15）。接合构件（12）从通气孔（15）的边缘部分（16）朝向车轮（1）的轮盘（2）突出。盘锁定部分（18）从接合构件（12）的前端部朝向通气孔（15）突出，并且优选地包括与所述接合构件（12）的周边部分（7）接合的锁定突起（31,32）盘形开口（6），使得保持器（24）与保持器锁定凹部（35）接合以推动和保持盘锁定部分（18）。

67. 发明申请

US20050062054A1 Semiconductor light emitting device 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20050062054A1
公开(公告)日：2005-03-24
申请号：US10829306
申请日：2004-04-20
申请人： Shinsuke Fujiwara , Takao Nakamura , Hiroki Mori , Koji Katayama
发明人： Shinsuke Fujiwara , Takao Nakamura , Hiroki Mori , Koji Katayama
IPC分类号： H01L33/06 , H01L33/28 , H01L33/00
CPC分类号： H01L33/28 , H01L33/06 , H01S5/327
摘要： A ZnSe based light emitting device enabling longer lifetime is provided. The light emitting device is formed on a compound semiconductor, includes an active layer positioned between an n-type ZnMgSSe cladding layer and a p-type ZnMgSSe cladding layer, and has a barrier layer having a band gap larger than that of the p-type ZnMgSSe cladding layer, provided between the active layer and the p-type ZnMgSSe cladding layer.
摘要翻译：提供了一种能延长使用寿命的基于ZnSe的发光器件。发光器件形成在化合物半导体上，包括位于n型ZnMgSSe覆层和p型ZnMgSSe覆层之间的有源层，并且具有比p型的带隙大的带隙的阻挡层 ZnMgSSe包层，设置在有源层和p型ZnMgSSe覆层之间。

68. 发明授权

US06861681B2 On-p-GaAs substrate Zn1-xMgxSySe1-y pin photodiode and on-p-GaAs substrate Zn1-xMgxSySe1-y avalanche photodiode 有权
公开(公告)号：US06861681B2
公开(公告)日：2005-03-01
申请号：US10620510
申请日：2003-07-16
申请人： Koshi Ando , Tomoki Abe , Takao Nakamura
发明人： Koshi Ando , Tomoki Abe , Takao Nakamura
IPC分类号： H01L31/10 , G01J1/02 , H01L21/8238 , H01L31/00 , H01L31/0248 , H01L31/0256 , H01L31/0296 , H01L31/0328 , H01L31/0352 , H01L31/036 , H01L31/072 , H01L31/105 , H01L31/107 , H01L31/18
CPC分类号： H01L31/0296 , B82Y20/00 , H01L31/02966 , H01L31/0328 , H01L31/035236 , H01L31/107
摘要： A blue-ultraviolet on-p-GaAs substrate pin Zn1-xMgxSySe1-y photodiode with high quantum efficiency, small dark current, high reliability and a long lifetime. The ZnMgSSe photodiode has a metallic p-electrode, a p-GaAs single crystal substrate, a p-(ZnSe/ZnTe)m superlattice (m: integer number of sets of thin films), an optionally formed p-ZnSe buffer layer, a p-Zn1-xMgxSySe1-y layer, an i-Zn1-xMgxSySe1-y layer, an n-Zn1-xMgxSySe1-y layer, an n-electrode and an optionally provided antireflection film. Incidence light arrives at the i-layer without passing ZnTe layers. Since the incidence light is not absorbed by ZnTe layers, high quantum efficiency and high sensitivity are obtained.

69. 发明授权

US06605890B1 Color cathode ray tube having an improved shadow mask 失效
标题翻译：具有改进的荫罩的彩色阴极射线管
公开(公告)号：US06605890B1
公开(公告)日：2003-08-12
申请号：US09598323
申请日：2000-06-21
申请人： Hideo Tanabe , Mitsuru Watanabe , Takao Nakamura , Hiroshi Kawasaki
发明人： Hideo Tanabe , Mitsuru Watanabe , Takao Nakamura , Hiroshi Kawasaki
IPC分类号： H01J2907
CPC分类号： H01J29/07 , H01J2229/0744
摘要： A color cathode ray tube has an electron gun, a phosphor screen, and a shadow mask closely spaced from the phosphor screen. The shadow mask has plural strips extending in a direction perpendicular to a horizontal scanning direction of electron beams emitted from the electron gun and plural bridge portions connecting adjacent ones among the plural strips. The shadow mask is formed with an aperture area having plural slot-shaped electron beam apertures therein. The shadow mask is provided with at least one wire held under tension in the extending direction of the plural strips so as to be superposed on a surface of one of the plural strips in the aperture area. The surface of the one of the plural strips is a surface of the one of the plural strips facing the electron gun.
摘要翻译：彩色阴极射线管具有与荧光屏紧密间隔的电子枪，荧光屏和荫罩。荫罩具有沿从垂直于从电子枪发射的电子束的水平扫描方向垂直的方向延伸的多个条带，以及连接多个条带中的相邻的多个桥接部分。荫罩形成有其中具有多个槽形电子束孔的开口区域。荫罩设置有至少一根沿多个条的延伸方向张力保持的线，以便在开口区域中的多个条带之一的表面上重叠。多个条带之一的表面是面对电子枪的多个条带之一的表面。

70. 发明授权

US06222311B1 Narrow-neck CRT having a large stem pin circle 失效
标题翻译：窄颈CRT具有较大的针脚圆
公开(公告)号：US06222311B1
公开(公告)日：2001-04-24
申请号：US09551204
申请日：2000-04-17
申请人： Hisashi Nose , Takao Nakamura , Hidehiro Koumura
发明人： Hisashi Nose , Takao Nakamura , Hidehiro Koumura
IPC分类号： H01J3100
CPC分类号： H01J29/92 , H01J29/861
摘要： A cathode ray tube has a vacuum envelope including a panel portion having a phosphor screen, a neck portion having a stem fused and sealed to one end thereof, and a funnel portion for connecting the other end of the neck portion and the panel portion. The stem has stem pins annularly arrayed, sealed thereto and extending there-through for supporting an electron gun in the neck portion, and a stem mound is raised and formed integrally with the stem around a base of each of the stem pins on an electron-gun-supporting side thereof. The stem is provided with a raised outer circular edge or a flat outer circular edge. A first distance R1 is defined as a distance from a center axis of the neck portion to an inner wall in a region of the neck portion facing a major portion of the electron gun, and a second distance R2 is defined as a distance from the center axis to an outside edge of the stem mound as measured at half an axial height of the stem mound. The first distance R1 and the second distance R2 satisfy a relationship, 0
摘要翻译：阴极射线管具有真空外壳，该真空外壳包括具有荧光屏的面板部分，颈部具有熔接并密封到其一端的杆，以及用于连接颈部的另一端和面板部分的漏斗部分。茎具有环形排列的茎柱，密封在其上并在其上延伸，用于在颈部中支撑电子枪，并且茎墩升起并与茎周围的每个茎穗的基部一体地形成在电子束上，枪支撑侧。杆设置有凸起的外圆周边缘或平坦的外圆周边缘。第一距离R1被定义为在颈部的面对电子枪的主要部分的区域中从颈部的中心轴线到内壁的距离，并且第二距离R2被定义为距离中心的距离轴线到茎墩的外边缘，如在茎墩的半轴向高度处测量的。第一距离R1和第二距离R2满足关系，0

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