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61. 发明申请

US20140078619A1 Shield Designs with Internal Magnetization Control for ATE Improvement 有权
标题翻译：用于ATE改进的内部磁化控制的盾构设计
公开(公告)号：US20140078619A1
公开(公告)日：2014-03-20
申请号：US13620764
申请日：2012-09-15
申请人： Suping Song , Lijie Guan , Tai Min , Yuhui Tang
发明人： Suping Song , Lijie Guan , Tai Min , Yuhui Tang
IPC分类号： G11B5/127
CPC分类号： G11B5/315 , G11B5/1278 , G11B5/3116 , G11B5/3163
摘要： A magnetic recording head is fabricated with a pole tip shielded laterally on its sides by a pair of symmetrically disposed side shields formed of porous heterogeneous material that contains non-magnetic inclusions. The non-magnetic inclusions, when properly incorporated within the magnetic matrix of the shields, promote the formation of flux loops within the shields that have portions that are parallel to the ABS and do not display locally disorganized and dynamic regions of flux during the creation of magnetic transitions within the recording medium by the magnetic pole. These flux loop portions, combine with the magnetic flux emerging from the main pole to create a net writing field that significantly reduces adjacent track erasures (ATE) and wide area erasures (WATE).
摘要翻译：制造磁记录头，其极侧通过由包含非磁性夹杂物的多孔异质材料形成的一对对称设置的侧屏蔽侧向屏蔽。当非磁性夹杂物适当地并入屏蔽体的磁矩阵中时，促进在屏蔽体内形成具有与ABS平行的部分的磁通环，并且在创建过程中不显示局部无组织和动态的磁通区域通过磁极在记录介质内的磁转变。这些磁通回路部分与从主极产生的磁通相结合，形成一个净写入场，显着地减少了相邻轨道擦除（ATE）和广域擦除（WATE）。

62. 发明申请

US20140037861A1 Method of Forming a Writer with an AFM Write Gap 审中-公开
标题翻译：使用AFM写入间隙形成Writer的方法
公开(公告)号：US20140037861A1
公开(公告)日：2014-02-06
申请号：US14048080
申请日：2013-10-08
申请人： Tai Min , Tang Yuhui , Lijie Guan
发明人： Tai Min , Tang Yuhui , Lijie Guan
IPC分类号： G11B5/23
CPC分类号： G11B5/232 , G11B5/1278 , G11B5/235 , G11B5/3116 , H01F10/3272 , Y10T428/1186
摘要： A perpendicular magnetic recording (PMR) head is fabricated with main pole and a trailing edge shield antiferromagnetically coupled across a write gap by either having the write gap layer formed as a synthetic antiferromagnetic tri-layer (SAF) or formed as a monolithic layer of antiferromagnetic material. The coupling improves the write performance of the writer by enhancing the perpendicular component of the write field and its gradient. Methods of fabricating the writer are provided.
摘要翻译：制造垂直磁记录（PMR）头，其主磁极和后沿屏蔽通过将写间隙层形成为合成反铁磁三层（SAF）或形成为反铁磁性的单片层，反写磁耦合跨写写间隙材料。耦合通过增强写入场的垂直分量及其梯度来提高写入器的写入性能。提供了作者的制作方法。

63. 发明授权

US08564903B2 Writer with an AFM write gap 有权
标题翻译：作家有一个AFM写入差距
公开(公告)号：US08564903B2
公开(公告)日：2013-10-22
申请号：US13068638
申请日：2011-05-16
申请人： Tai Min , Yuhui Tang , Lijie Guan , Min Li
发明人： Tai Min , Yuhui Tang , Lijie Guan , Min Li
IPC分类号： G11B5/127
CPC分类号： G11B5/232 , G11B5/1278 , G11B5/235 , G11B5/3116 , H01F10/3272 , Y10T428/1186
摘要： A perpendicular magnetic recording (PMR) head is fabricated with main pole and a trailing edge shield antiferromagnetically coupled across a write gap by either having the write gap layer formed as a synthetic antiferromagnetic tri-layer (SAF) or formed as a monolithic layer of antiferromagnetic material. The coupling improves the write performance of the writer by enhancing the perpendicular component of the write field and its gradient. Methods of fabricating the writer are provided.
摘要翻译：制造垂直磁记录（PMR）头，其主磁极和后沿屏蔽通过将写间隙层形成为合成反铁磁三层（SAF）或形成为反铁磁性单片层材料。耦合通过增强写入场的垂直分量及其梯度来提高写入器的写入性能。提供了作者的制作方法。

64. 发明申请

US20120295133A1 Writer with an AFM write gap 有权
标题翻译：作家有一个AFM写入差距
公开(公告)号：US20120295133A1
公开(公告)日：2012-11-22
申请号：US13068638
申请日：2011-05-16
申请人： Tai Min , Yuhui Tang , Lijie Guan , Min Li
发明人： Tai Min , Yuhui Tang , Lijie Guan , Min Li
IPC分类号： G11B5/187 , H01F1/047
CPC分类号： G11B5/232 , G11B5/1278 , G11B5/235 , G11B5/3116 , H01F10/3272 , Y10T428/1186
摘要： A perpendicular magnetic recording (PMR) head is fabricated with main pole and a trailing edge shield antiferromagnetically coupled across a write gap by either having the write gap layer formed as a synthetic antiferromagnetic tri-layer (SAF) or formed as a monolithic layer of antiferromagnetic material. The coupling improves the write performance of the writer by enhancing the perpendicular component of the write field and its gradient. Methods of fabricating the writer are provided.
摘要翻译：制造垂直磁记录（PMR）头，其主磁极和后沿屏蔽通过将写间隙层形成为合成反铁磁三层（SAF）或形成为反铁磁性的单片层，反写磁耦合跨写写间隙材料。耦合通过增强写入场的垂直分量及其梯度来改善写入器的写入性能。提供了作者的制作方法。

65. 发明申请

US20120295132A1 Writer design with enhanced writability 有权
标题翻译：作家设计具有增强的可编写性
公开(公告)号：US20120295132A1
公开(公告)日：2012-11-22
申请号：US13068652
申请日：2011-05-16
申请人： Tai Min , Yuhui Tang , Suping Song , Lijie Guan
发明人： Tai Min , Yuhui Tang , Suping Song , Lijie Guan
IPC分类号： G11B5/33 , B05D5/12
CPC分类号： G11B5/3116 , G11B5/1278 , Y10T428/115 , Y10T428/1186
摘要： A perpendicular magnetic recording (PMR) head is fabricated with a main pole and a trailing edge shield having surfaces and interior portions that may include synthetic antiferromagnetic multi-layered superlattices (SAFS) formed on and/or within them respectively. The SAFS, which are multilayers formed as periodic multiples of antiferromagnetically coupled tri-layers, provide a mechanism for enhancing the component of the writing field that is vertical to the magnetic medium by exchange coupling to the magnetization of the pole and shield and constraining the directions of their magnetizations to lie within the film plane of the SAFS.
摘要翻译：制造具有主极和后缘屏蔽的垂直磁记录（PMR）头，其具有可分别形成在其上和/或内的合成反铁磁多层超晶格（SAFS）的表面和内部部分。作为形成为反铁磁耦合三层的周期倍数的多层的SAFS提供了一种用于通过交换耦合到磁极和屏蔽的磁化并限制方向来增强与磁介质垂直的写入场的分量的机制的磁化位于SAFS的膜平面内。

66. 发明申请

US20120127611A1 Modified shield design to eliminate the far-field WATE problem 有权
标题翻译：改良屏蔽设计，消除远场WATE问题
公开(公告)号：US20120127611A1
公开(公告)日：2012-05-24
申请号：US12927797
申请日：2010-11-24
申请人： Tai Min
发明人： Tai Min
IPC分类号： G11B5/17
CPC分类号： G11B5/1278 , G11B5/3116
摘要： A shield design for a magnetic write head is described that eliminates the far-field WATE problem while still maintaining side shielding ability. This is achieved by moving all but the central sections of the three shields (LS, SS, and WS) and, optionally, the top yoke a short distance further away from the recording medium than the ABS.
摘要翻译：描述了用于磁写头的屏蔽设计，其在保持侧屏蔽能力的同时消除了远场WATE问题。这通过移动三个屏蔽件（LS，SS和WS）中的所有中心部分，并且可选地将顶部磁轭移动到比ABS更远离记录介质的距离处。

67. 发明授权

US08178363B2 MRAM with storage layer and super-paramagnetic sensing layer 有权
标题翻译： MRAM与存储层和超顺磁感应层
公开(公告)号：US08178363B2
公开(公告)日：2012-05-15
申请号：US13373127
申请日：2011-11-04
申请人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
发明人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
IPC分类号： H01L21/336 , H01L21/8246
CPC分类号： H01L43/08
摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.
摘要翻译：公开了一种MRAM，其具有由沿第一轴的磁化方向的铁磁层，超顺磁性（SP）自由层和在它们之间形成的绝缘层构成的MTJ。 SP自由层具有在没有外部场的情况下基本为零的残余磁化，并且其中磁化大致与外部场成正比，直到达到饱和值。在一个实施例中，单独的存储层形成在MTJ的上方，下方或附近，并且具有沿其易于轴线平行于第一轴线的磁化方向的单轴各向异性。在第二实施例中，存储层形成在MTJ内的非磁性导电间隔层上，并与MTJ同时构图。 SP自由层可以是CoFeB的多层或层压层。存储层可以具有SyAP配置和层压结构。

68. 发明授权

US08062909B2 MRAM with storage layer and super-paramagnetic sensing layer 有权
公开(公告)号：US08062909B2
公开(公告)日：2011-11-22
申请号：US12661365
申请日：2010-03-16
申请人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
发明人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
IPC分类号： H01L21/336 , H01L21/8246
CPC分类号： H01L43/08
摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

69. 发明授权

US08039885B2 MRAM with storage layer and super-paramagnetic sensing layer 有权
标题翻译： MRAM与存储层和超顺磁感应层
公开(公告)号：US08039885B2
公开(公告)日：2011-10-18
申请号：US12661345
申请日：2010-03-16
申请人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
发明人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
IPC分类号： H01L29/94
CPC分类号： H01L43/08
摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.
摘要翻译：公开了一种MRAM，其具有由沿第一轴的磁化方向的铁磁层，超顺磁性（SP）自由层和在它们之间形成的绝缘层构成的MTJ。 SP自由层具有在没有外部场的情况下基本为零的残余磁化，并且其中磁化大致与外部场成正比，直到达到饱和值。在一个实施例中，单独的存储层形成在MTJ的上方，下方或附近，并且具有沿其易于轴线平行于第一轴线的磁化方向的单轴各向异性。在第二实施例中，存储层形成在MTJ内的非磁性导电间隔层上，并与MTJ同时构图。 SP自由层可以是CoFeB的多层或层压层。存储层可以具有SyAP配置和层压结构。

70. 发明授权

US07994597B2 MRAM with coupling valve switching 有权
标题翻译： MRAM具有联动阀开关
公开(公告)号：US07994597B2
公开(公告)日：2011-08-09
申请号：US12381567
申请日：2009-03-13
申请人： Tai Min
发明人： Tai Min
IPC分类号： G11C11/02
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1675
摘要： The free layer in a magneto-resistive memory element is stabilized through being pinned by an antiferromagnetic layer. A control valve layer provides exchange coupling between this antiferromagnetic layer and the free layer. When writing data into the free layer, the control valve layer is heated above its curie point thereby temporarily uncoupling the free layer from said antiferromagnetic layer. Once the control valve cools, the free layer magnetization is once again pinned by the antiferromagnetic layer.
摘要翻译：磁阻存储元件中的自由层由反铁磁层固定而稳定。控制阀层在该反铁磁层和自由层之间提供交换耦合。当将数据写入自由层时，将控制阀层加热到其居里点以上，从而使自由层与所述反铁磁层暂时脱离。一旦控制阀冷却，自由层磁化又被反铁磁层固定住。

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