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61. 发明专利

AU2472901A Segmented electrode assembly and method for plasma processing 未知
公开(公告)号：AU2472901A
公开(公告)日：2001-07-24
申请号：AU2472901
申请日：2001-01-03
申请人： TOKYO ELECTRON LTD
发明人： MITROVIC ANDREJ S , JOHNSON WAYNE L
IPC分类号： C23C16/44 , H01J37/32 , H01L21/205 , H01L21/3065
摘要： An electrode assembly ( 50 ) and an associated plasma reactor system ( 10 ) and related methods for a variety of plasma processing applications. The electrode assembly provides control of a plasma density profile ( 202 ) within an interior region ( 30 ) of a plasma reactor chamber ( 20 ). The electrode assembly includes an upper electrode ( 54 ) having a lower surface ( 54 L), an upper surface ( 54 U) and an outer edge ( 54 E). The lower surface of the upper electrode faces interior region of the plasma chamber housing the plasma ( 200 ), and thus interfaces with the plasma. The electrode assembly further includes a segmented electrode ( 60 ) arranged proximate to and preferably substantially parallel with the upper surface of the upper electrode. The segmented electrode comprises two or more separated electrode segments ( 62 a , 62 b , . . . 62 n), each having an upper and lower surface. Each electrode segment is spaced apart from the upper electrode upper surface by a corresponding controlled gap (Ga, Gb, . . . Gn). The electrode assembly may further include one or more actuators ( 110 ) attached to one or more electrode segments at the upper surface of the one or more electrode segments. The actuators allow for movement of the one or more electrode segments to adjust one or more of the controlled gaps. The adjustable controlled gaps allow for controlling the shape of the plasma density profile within the interior region of the chamber, thereby allowing for a desired plasma process result.

62. 发明专利

AU2577001A Method and system for reducing damage to substrates during plasma processing with a resonator source 未知
公开(公告)号：AU2577001A
公开(公告)日：2001-07-03
申请号：AU2577001
申请日：2000-12-20
申请人： TOKYO ELECTRON LTD
发明人： JOHNSON WAYNE L , SIRKIS MURRAY D
IPC分类号： C23C16/507 , H01J37/32

63. 发明公开

EP1147242A4 LARGE AREA PLASMA SOURCE 审中-公开
标题翻译：大面积等离子体源
公开(公告)号：EP1147242A4
公开(公告)日：2007-05-02
申请号：EP99961807
申请日：1999-12-10
申请人： TOKYO ELECTRON LTD
发明人： JOHNSON WAYNE L
IPC分类号： H05H1/46 , B01J19/08 , C23C16/00 , C23C16/507 , H01J37/32 , H01L21/205 , H01L21/26 , H01L21/302 , H01L21/306 , H01L21/3065 , H01L21/42 , H05H1/00
CPC分类号： H01J37/32458 , H01J37/321 , H01J37/32522
摘要： A chamber housing (2) enclosing a plasma region (10) in a large area plasma source used for performing plasma assisted processes in large area substrates, the chamber housing (2) being composed of: a housing member (2) constituting a substantially vertically extending wall (4) surrounding a space (6) corresponding to the plasma region (10), the housing member (2) having a plurality of openings (32), and electrically conductive elements forming an electrostatic shield around the space; a plurality of dielectric members (36) each having a peripheral edge and each disposed to close a respective opening (32); and sealing members (40, 40', 42, 42') forming a hermetic seal between said housing member and said peripheral edge of each of said dielectric members (36).

64. 发明公开

EP1147691A4 PLASMA VACUUM PUMP 审中-公开
标题翻译： PLASMAVAKUUMPUMPE
公开(公告)号：EP1147691A4
公开(公告)日：2006-08-30
申请号：EP99962863
申请日：1999-12-10
申请人： TOKYO ELECTRON LTD
发明人： JOHNSON WAYNE L , DANDL RAPHAEL A , GUEST GARETH E
IPC分类号： F04D19/04 , B01J19/08 , H01J41/12 , H01J41/18 , H05H1/54 , H05H1/00
CPC分类号： H01J37/32834 , H01J41/12 , H01J41/18 , H05H1/54
摘要： A plasma pump and method for pumping ions from a first to second region, the pump including a partition member having a through opening defining a plurality of conduits (30); a group of magnets (24) to provide magnetic forces that extend to the conduits; and a plurality of electric potential sources (14) for creating electrostatic fields which accelerate ions from the conduits to the second region.

65. 发明公开

EP1212611A4 ELECTRON DENSITY MEASUREMENT AND PLASMA PROCESS CONTROL SYSTEM USING CHANGES IN THE RESONANT FREQUENCY OF AN OPEN RESONATOR CONTAINING THE PLASMA 有权
标题翻译：电子密度和等离子体控制系统的测量而改变含血浆OPEN谐振器的谐振频率下使用
公开(公告)号：EP1212611A4
公开(公告)日：2006-03-22
申请号：EP00975171
申请日：2000-07-20
申请人： TOKYO ELECTRON LTD
发明人： VERDEYEN JOSEPH T , JOHNSON WAYNE L , SIRKIS MURRAY D
IPC分类号： G01N27/62 , H01J37/32 , H05H1/00 , H05H1/46
CPC分类号： H01J37/32935 , H01J37/32954 , H01J37/3299 , H05H1/0006
摘要： A system for measuring plasma electron densities (e.g., in the range of 1 010 to 1 01' cm-') and for controlling a plasma generator (320). Measurement of the plasma electron density is used as part of a feedback control in plasma-assisted processes, such as depositions or etches. Both the plasma measurement method and system generate a control voltage that in turn controls the plasma generator. A programmable frequency source (201) sequentially excites a number of the resonant modes of an open resonator placed within the plasma processing apparatus. The resonant frequencies of the resonant modes depend on the plasma electron density in the space between the reflectors of the open resonator. The apparatus automatically determines the increase in the resonant frequency of an arbitrarily chosen resonant mode of the open resonator due to the introduction of a plasma and compares that measured frequency to data previously entered. The comparison is by any one of (1) dedicated circuitry, (2) a digital signal processor, and (3) a specially programmed general purpose computer (100). The comparator calculates a control signal which is used to modify the power output of the plasma generator (320) as necessary to achieve the desired plasma electron density.

66. 发明公开

EP1212692A4 ELECTRON DENSITY MEASUREMENT AND PLASMA PROCESS CONTROL SYSTEM USING A MICROWAVE OSCILLATOR LOCKED TO AN OPEN RESONATOR CONTAINING THE PLASMA 有权
标题翻译：血浆ELECTRONENDICHTE和控制系统具有微波AN OPEN谐振电路等离子体的振荡测量包括同步的使用。
公开(公告)号：EP1212692A4
公开(公告)日：2002-11-27
申请号：EP00948742
申请日：2000-07-20
申请人： TOKYO ELECTRON LTD
发明人： VERDEYEN JOSEPH T , JOHNSON WAYNE L , SIRKIS MURRAY D
IPC分类号： H05H1/00 , H01J37/32 , G06F17/00 , H01L21/66
CPC分类号： H01J37/32266 , H01J37/32311 , H01J37/32935 , H01J37/3299
摘要： A system for measuring plasma electron densities (e.g., in the range of 10?10 to 1012 cm-3¿) and for controlling a plasma generator (240). Measurement of the plasma density is essential if plasma-assisted processes, such depositions or etches, are to be adequately controlled using a feedback control. Both the plasma measurement method and system generate a control voltage that in turn controls the plasma generator (240) to maintain the plasma electron density at a pre-selected value. The system utilizes a frequency stabilization system to lock the frequency of a local oscillator (100) to the resonant frequency of an open microwave resonator (245) when the resonant frequency changes due to the introduction of a plasma within the open resonator. The amplified output voltage of a second microwave discriminator may be used to control a plasma generator (240).

67. 发明公开

EP1073779A4 REDUCED IMPEDANCE CHAMBER 审中-公开
标题翻译： REGDUZIERTE IMPEDANZKAMMER
公开(公告)号：EP1073779A4
公开(公告)日：2007-05-30
申请号：EP99916631
申请日：1999-04-12
申请人： TOKYO ELECTRON LTD
发明人： JOHNSON WAYNE L
IPC分类号： H05H1/46 , B01J3/00 , B01J3/02 , C23C16/44 , H01J37/32 , H01L21/00 , H01L21/205 , H01L21/302 , H01L21/3065 , C23F1/02 , C23C14/00 , C23C16/00
CPC分类号： C23C16/4412 , H01J37/32082 , H01J37/32174 , H01J37/3244 , H01J37/32724 , H01J37/32834 , H01L21/67069
摘要： A reduced impedance chamber for plasma processing leads to operational advantages including a plasma sheath voltage that is substantially independent of plasma impedance over a range of plasma impedances. The design of such a reduced impedance chamber includes a chuck assembly (30), a counter electrode and a plasma source. The chuck assembly (30) allows mounting of a workpiece (32) for processing and includes a driven electrode and a grounded portion (31). The plasma source (36) operates to generate a plasma in the chamber from process gas. A wall portion of the plasma source (36) is directly electrically connected to the counter electrode and to the ground portion (31) of the chuck assembly (30). The counter electrode may include an inject-exhaust plate that is mounted in a position opposed to the chuck assembly (30) and that operates to inject process gas into the chamber and to exhaust effluent.
摘要翻译：用于等离子体处理的阻抗减小的腔室导致操作优点，包括在等离子体阻抗范围内基本上与等离子体阻抗无关的等离子体鞘层电压。这种减少阻抗的腔室的设计包括卡盘组件（30），反电极和等离子体源。卡盘组件（30）允许安装工件（32）以进行处理并且包括驱动电极和接地部分（31）。等离子体源（36）用于从工艺气体在腔室中产生等离子体。等离子体源36的壁部分直接电连接到卡盘组件30的反电极和接地部分31。对电极可以包括注入 - 排出板，注入 - 排出板安装在与卡盘组件（30）相对的位置并且用于将处理气体注入腔室并排出流出物。

68. 发明公开

EP1030745A4 ALL-SURFACE BIASABLE AND/OR TEMPERATURE-CONTROLLED ELECTROSTATICALLY-SHIELDED RF PLASMA SOURCE 审中-公开
标题翻译：对所有表面极化和/或温度控制，ELEKTROSTATISCHCHÜTZTE射频等离子体源
公开(公告)号：EP1030745A4
公开(公告)日：2006-12-13
申请号：EP98957489
申请日：1998-11-13
申请人： TOKYO ELECTRON LTD
发明人： JOHNSON WAYNE L
IPC分类号： C23C16/00 , H05H1/46 , B08B7/00 , B08B17/00 , C23C16/44 , C23C16/50 , H01J37/32 , H01L21/00 , H01L21/205 , H01L21/302 , H01L21/3065
CPC分类号： H01L21/67109 , B08B7/0035 , C23C16/4405 , H01J37/321 , H01J37/32522 , H01J37/32623 , H01J37/32862 , Y10S438/905
摘要： A plasma processing system and method for producing a cleaner and more controlled environment for processing substrates such as semiconductor wafers. The plasma processing system includes a process chamber including an inner and an outer wall, a heating element thermally coupled to the inner wall of the process chamber, a bias shield, and an electrostatic shield. The processing system also includes an inductive coil surrounding the process chamber for coupling RF power to the gas inside the process chamber, thereby producing a plasma. RF power can also be applied to a wafer holder, such as an electrostatic chuck which can also be heated or cooled. The method of cleaning such a plasma processing system includes applying a bias voltage to the bias shield, heating the process chamber using the heater element, and cleaning the internal surfaces -- starting with the largest surface and progressing to the smallest surface.

69. 发明公开

EP1214459A4 PULSED PLASMA PROCESSING METHOD AND APPARATUS 有权
标题翻译： GEPULSTES PLASMABEHANDLUNGSVERFAHREN UND VORRICHTUNG
公开(公告)号：EP1214459A4
公开(公告)日：2006-07-26
申请号：EP00952656
申请日：2000-08-09
申请人： TOKYO ELECTRON LTD
发明人： JOHNSON WAYNE L , STRANG E
IPC分类号： F16K31/02 , H01J37/32 , B01J19/08 , C23C16/505 , C23C16/515 , C23C16/517 , H01L21/302 , H01L21/3065 , H01L21/311
CPC分类号： H01J37/3244 , H01J37/32082 , H01J37/32137 , H01L21/31116
摘要： In a method for performing a plasma-assisted treatment on a substrate in a reactor chamber (2) by: introducing at least one process gas into the reactor chamber (2); and creating a plasma within the reactor chamber (2) by establishing an RF electromagnetic field within the chamber (2) and allowing the field to interact withthe process gas, the electromagnetic field is controlled to have an energy level which varies cyclically between at least two values each sufficient to maintain the plasma, such that each energy level value is associated with performance of a respectively different treatment process on the substrate (8).
摘要翻译：在用于通过以下方式对反应器室中的基板进行等离子体辅助处理的方法中：将至少一种工艺气体引入反应器室; 以及通过在所述室内建立RF电磁场并允许所述场与所述工艺气体相互作用来在所述反应器室内产生等离子体，所述电磁场被控制为具有能够在至少两个值之间周期性变化的能级，所述至少两个值足以维持等离子体，使得每个能级值与在衬底上分别不同的处理过程的性能相关联。

70. 发明公开

EP1218763A4 ELECTRON DENSITY MEASUREMENT AND CONTROL SYSTEM USING PLASMA-INDUCED CHANGES IN THE FREQUENCY OF A MICROWAVE OSCILLATOR 审中-公开
标题翻译： ELEKTRONENDICHTEMESSUNGS-和控制系统的微波振荡器等离子所引起的频率变化的使用
公开(公告)号：EP1218763A4
公开(公告)日：2005-02-02
申请号：EP00947493
申请日：2000-07-20
申请人： TOKYO ELECTRON LTD
发明人： VERDEYEN JOSEPH T , JOHNSON WAYNE L , SIRKIS MURRAY D
IPC分类号： G01N22/00 , G01R19/00 , H01L21/302 , H01L21/3065 , H05H1/00 , G01R27/04 , H01J37/32
CPC分类号： G01R19/0061
摘要： A method and system for measuring at least one of a plasma density and an electron density (e.g., in a range of 10 to 10 cm ). Measurement of at least one of the plasma density and the electron density enables plasma-assisted processes, such as depositions or etches, to be controlled using a feedback control. Both the measurement method and system generate a control voltage that in turn controls a plasma generator (205) to maintain at least one of the plasma density and the electron density at a pre-selected value.

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