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61. 发明申请

US20080315193A1 Oxide-based thin film transistor, method of fabricating the same, zinc oxide etchant, and a method of forming the same 审中-公开
标题翻译：基于氧化物的薄膜晶体管，其制造方法，氧化锌蚀刻剂及其形成方法
公开(公告)号：US20080315193A1
公开(公告)日：2008-12-25
申请号：US12149409
申请日：2008-05-01
申请人： Chang-jung Kim , Young-soo Park , Eun-ha Lee , Jae-chul Park
发明人： Chang-jung Kim , Young-soo Park , Eun-ha Lee , Jae-chul Park
IPC分类号： H01L29/22 , H01L21/34 , C09K13/06 , C09K13/08
CPC分类号： C09K13/06 , H01L21/467 , H01L29/7869
摘要： Provided is a zinc (Zn) oxide-based thin film transistor that may include a gate, a gate insulating layer on the gate, a channel including zinc oxide and may be on a portion of the gate insulating layer, and a source and drain contacting respective sides of the channel. The zinc (Zn) oxide-based thin film transistor may further include a recession in the channel between the source and the drain, and a zinc oxide-based etchant may be used to form the recession.
摘要翻译：提供一种锌（Zn）氧化物基薄膜晶体管，其可以包括栅极，栅极上的栅极绝缘层，包含氧化锌的沟道，并且可以在栅极绝缘层的一部分上，以及源极和漏极接触渠道的各边。锌（Zn）氧化物基薄膜晶体管还可以包括在源极和漏极之间的沟道中的凹陷，并且可以使用氧化锌基蚀刻剂来形成凹陷。

62. 发明申请

US20080315200A1 Oxide semiconductors and thin film transistors comprising the same 有权
标题翻译：氧化物半导体和包括其的薄膜晶体管
公开(公告)号：US20080315200A1
公开(公告)日：2008-12-25
申请号：US12213327
申请日：2008-06-18
申请人： Chang-jung Kim , Eun-ha Lee , Young-soo Park , Jae-chul Park
发明人： Chang-jung Kim , Eun-ha Lee , Young-soo Park , Jae-chul Park
IPC分类号： H01L29/10
CPC分类号： H01L29/7869
摘要： Oxide semiconductors and thin film transistors (TFTs) including the same are provided. An oxide semiconductor includes Zn atoms and at least one of Hf and Cr atoms added thereto. A thin film transistor (TFT) includes a channel including an oxide semiconductor including Zn atoms and at least one of Hf and Cr atoms added thereto.
摘要翻译：提供包括其的氧化物半导体和薄膜晶体管（TFT）。氧化物半导体包括Zn原子和添加了Hf原子和Cr原子中的至少一种。薄膜晶体管（TFT）包括包括包含Zn原子和添加有Hf原子和Cr原子中的至少一种的氧化物半导体的沟道。

63. 发明申请

US20090242992A1 Inverter, logic circuit including an inverter and methods of fabricating the same 有权
标题翻译：逆变器，包括逆变器的逻辑电路及其制造方法
公开(公告)号：US20090242992A1
公开(公告)日：2009-10-01
申请号：US12232854
申请日：2008-09-25
申请人： Sang-wook Kim , Young-soo Park , Jae-chul Park
发明人： Sang-wook Kim , Young-soo Park , Jae-chul Park
IPC分类号： H01L23/62
CPC分类号： H01L21/823462 , H01L21/84 , H01L27/0883
摘要： An inverter, a logic circuit including the inverter and method of fabricating the same are provided. The inverter includes a load transistor of a depletion mode, and a driving transistor of an enhancement mode, which is connected to the load transistor. The load transistor may have a first oxide layer as a first channel layer. The driving transistor may have a second oxide layer as a second channel layer.
摘要翻译：提供了一种逆变器，包括逆变器的逻辑电路及其制造方法。逆变器包括耗尽模式的负载晶体管和连接到负载晶体管的增强模式的驱动晶体管。负载晶体管可以具有作为第一沟道层的第一氧化物层。驱动晶体管可以具有作为第二沟道层的第二氧化物层。

64. 发明授权

US08158978B2 Inverter, logic circuit including an inverter and methods of fabricating the same 有权
标题翻译：逆变器，包括逆变器的逻辑电路及其制造方法
公开(公告)号：US08158978B2
公开(公告)日：2012-04-17
申请号：US12805190
申请日：2010-07-16
申请人： Sang-wook Kim , Young-soo Park , Jae-chul Park
发明人： Sang-wook Kim , Young-soo Park , Jae-chul Park
IPC分类号： H01L29/12 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H03K19/094 , H03K19/20
CPC分类号： H01L21/823462 , H01L21/84 , H01L27/0883
摘要： An inverter, a logic circuit including the inverter and method of fabricating the same are provided. The inverter includes a load transistor of a depletion mode, and a driving transistor of an enhancement mode, which is connected to the load transistor. The load transistor may have a first oxide layer as a first channel layer. The driving transistor may have a second oxide layer as a second channel layer.
摘要翻译：提供了一种逆变器，包括逆变器的逻辑电路及其制造方法。逆变器包括耗尽模式的负载晶体管和连接到负载晶体管的增强模式的驱动晶体管。负载晶体管可以具有作为第一沟道层的第一氧化物层。驱动晶体管可以具有作为第二沟道层的第二氧化物层。

65. 发明授权

US08003419B2 Method of manufacturing light emitting device 有权
标题翻译：制造发光器件的方法
公开(公告)号：US08003419B2
公开(公告)日：2011-08-23
申请号：US12458900
申请日：2009-07-27
申请人： Kyoung-kook Kim , Su-hee Chae , Young-soo Park , Taek Kim , Moon-seung Yang , Hyung-su Jeong , Jae-chul Park , Jun-youn Kim
发明人： Kyoung-kook Kim , Su-hee Chae , Young-soo Park , Taek Kim , Moon-seung Yang , Hyung-su Jeong , Jae-chul Park , Jun-youn Kim
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L2924/0002 , H01L2924/00
摘要： Provided is a method of manufacturing a light emitting device from a large-area bonding wafer by using a wafer bonding method using. The method may include forming a plurality of semiconductor layers, each having an active region for emitting light, on a plurality of growth substrates. The method may also include arranging the plurality of growth substrates on which the semiconductor layers are formed on one bonding substrate and simultaneously processing each of the semiconductor layers formed on each of the growth substrates through subsequent processes. The bonding wafer may be formed of a material that reduces or prevents bending or warping due to a difference of thermal expansion coefficients between a wafer material, such as sapphire, and a bonding wafer. According to the above method, because a plurality of wafers may be processed by one process, mass production of LEDs may be possible which may reduce manufacturing costs.
摘要翻译：提供了一种使用晶片接合方法从大面积接合晶片制造发光器件的方法。该方法可以包括在多个生长衬底上形成多个半导体层，每个半导体层具有发射光的有源区。该方法还可以包括在其上形成半导体层的多个生长衬底布置在一个接合衬底上，并且通过后续处理同时处理在每个生长衬底上形成的每个半导体层。接合晶片可以由减少或防止由于晶片材料（例如蓝宝石）和接合晶片之间的热膨胀系数的差异而导致的弯曲或翘曲的材料形成。根据上述方法，由于可以通过一个处理来处理多个晶片，因此大量生产LED可能会降低制造成本。

66. 发明授权

US07847287B2 Inverter, logic circuit including an inverter and methods of fabricating the same 有权
标题翻译：逆变器，包括逆变器的逻辑电路及其制造方法
公开(公告)号：US07847287B2
公开(公告)日：2010-12-07
申请号：US12232854
申请日：2008-09-25
申请人： Sang-wook Kim , Young-soo Park , Jae-chul Park
发明人： Sang-wook Kim , Young-soo Park , Jae-chul Park
IPC分类号： H01L29/12 , H01L23/62
CPC分类号： H01L21/823462 , H01L21/84 , H01L27/0883
摘要： An inverter, a logic circuit including the inverter and method of fabricating the same are provided. The inverter includes a load transistor of a depletion mode, and a driving transistor of an enhancement mode, which is connected to the load transistor. The load transistor may have a first oxide layer as a first channel layer. The driving transistor may have a second oxide layer as a second channel layer.
摘要翻译：提供了一种逆变器，包括逆变器的逻辑电路及其制造方法。逆变器包括耗尽模式的负载晶体管和连接到负载晶体管的增强模式的驱动晶体管。负载晶体管可以具有作为第一沟道层的第一氧化物层。驱动晶体管可以具有作为第二沟道层的第二氧化物层。

67. 发明授权

US08222663B2 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08222663B2
公开(公告)日：2012-07-17
申请号：US12458797
申请日：2009-07-23
申请人： Kyoung-kook Kim , Su-hee Chae , Young-soo Park , Taek Kim , Moon-seung Yang , Hyung-su Jeong , Jae-chul Park , Jun-youn Kim
发明人： Kyoung-kook Kim , Su-hee Chae , Young-soo Park , Taek Kim , Moon-seung Yang , Hyung-su Jeong , Jae-chul Park , Jun-youn Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/12
摘要： Provided is a light emitting diode (LED) manufactured by using a wafer bonding method and a method of manufacturing a LED by using a wafer bonding method. The wafer bonding method may include interposing a stress relaxation layer formed of a metal between a semiconductor layer and a bonding substrate. When the stress relaxation layer is used, stress between the bonding substrate and a growth substrate may be offset due to the flexibility of metal, and accordingly, bending or warpage of the bonding substrate may be reduced or prevented.
摘要翻译：提供了通过使用晶片接合方法制造的发光二极管（LED）和通过使用晶片接合方法制造LED的方法。晶片接合方法可以包括在半导体层和接合基板之间插入由金属形成的应力松弛层。当使用应力松弛层时，由于金属的柔韧性，接合基板和生长基板之间的应力可能被抵消，因此可以减少或防止接合基板的弯曲或翘曲。

68. 发明申请

US20100124798A1 Method of manufacturing light emitting device 有权
标题翻译：制造发光器件的方法
公开(公告)号：US20100124798A1
公开(公告)日：2010-05-20
申请号：US12458900
申请日：2009-07-27
申请人： Kyoung-kook Kim , Su-hee Chae , Young-soo Park , Taek Kim , Moon-Seung Yang , Hyung-su Jeong , Jae-chul Park , Jun-youn Kim
发明人： Kyoung-kook Kim , Su-hee Chae , Young-soo Park , Taek Kim , Moon-Seung Yang , Hyung-su Jeong , Jae-chul Park , Jun-youn Kim
IPC分类号： H01L21/28
CPC分类号： H01L33/0079 , H01L2924/0002 , H01L2924/00
摘要： Provided is a method of manufacturing a light emitting device from a large-area bonding wafer by using a wafer bonding method using. The method may include forming a plurality of semiconductor layers, each having an active region for emitting light, on a plurality of growth substrates. The method may also include arranging the plurality of growth substrates on which the semiconductor layers are formed on one bonding substrate and simultaneously processing each of the semiconductor layers formed on each of the growth substrates through subsequent processes. The bonding wafer may be formed of a material that reduces or prevents bending or warping due to a difference of thermal expansion coefficients between a wafer material, such as sapphire, and a bonding wafer. According to the above method, because a plurality of wafers may be processed by one process, mass production of LEDs may be possible which may reduce manufacturing costs.
摘要翻译：提供了一种使用晶片接合方法从大面积接合晶片制造发光器件的方法。该方法可以包括在多个生长衬底上形成多个半导体层，每个半导体层具有发射光的有源区。该方法还可以包括在其上形成半导体层的多个生长衬底布置在一个接合衬底上，并且通过后续处理同时处理在每个生长衬底上形成的每个半导体层。接合晶片可以由减少或防止由于晶片材料（例如蓝宝石）和接合晶片之间的热膨胀系数的差异而导致的弯曲或翘曲的材料形成。根据上述方法，由于可以通过一个处理来处理多个晶片，因此大量生产LED可能会降低制造成本。

69. 发明申请

US20100123158A1 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US20100123158A1
公开(公告)日：2010-05-20
申请号：US12458797
申请日：2009-07-23
申请人： Kyoung-kook Kim , Su-hee Chae , Young-soo Park , Taek Kim , Moon-seung Yang , Hyung-su Jeong , Jae-chul Park , Jun-youn Kim
发明人： Kyoung-kook Kim , Su-hee Chae , Young-soo Park , Taek Kim , Moon-seung Yang , Hyung-su Jeong , Jae-chul Park , Jun-youn Kim
IPC分类号： H01L33/00 , H01L21/50
CPC分类号： H01L33/0079 , H01L33/12
摘要： Provided is a light emitting diode (LED) manufactured by using a wafer bonding method and a method of manufacturing a LED by using a wafer bonding method. The wafer bonding method may include interposing a stress relaxation layer formed of a metal between a semiconductor layer and a bonding substrate. When the stress relaxation layer is used, stress between the bonding substrate and a growth substrate may be offset due to the flexibility of metal, and accordingly, bending or warpage of the bonding substrate may be reduced or prevented.
摘要翻译：提供了通过使用晶片接合方法制造的发光二极管（LED）和通过使用晶片接合方法制造LED的方法。晶片接合方法可以包括在半导体层和接合基板之间插入由金属形成的应力松弛层。当使用应力松弛层时，由于金属的柔韧性，接合基板和生长基板之间的应力可能被抵消，因此可以减少或防止接合基板的弯曲或翘曲。

70. 发明申请

US20100283509A1 Inverter, logic circuit including an inverter and methods of fabricating the same 有权
公开(公告)号：US20100283509A1
公开(公告)日：2010-11-11
申请号：US12805190
申请日：2010-07-16
申请人： Sang-wook Kim , Young-soo Park , Jae-chul Park
发明人： Sang-wook Kim , Young-soo Park , Jae-chul Park
IPC分类号： H03K19/094
CPC分类号： H01L21/823462 , H01L21/84 , H01L27/0883
摘要： An inverter, a logic circuit including the inverter and method of fabricating the same are provided. The inverter includes a load transistor of a depletion mode, and a driving transistor of an enhancement mode, which is connected to the load transistor. The load transistor may have a first oxide layer as a first channel layer. The driving transistor may have a second oxide layer as a second channel layer.

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