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61. 发明授权

US6110770A Semiconductor and process for fabricating the same 有权
标题翻译：半导体及其制造方法
公开(公告)号：US6110770A
公开(公告)日：2000-08-29
申请号：US229306
申请日：1999-01-13
申请人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Shunpei Yamazaki , Yasuhiko Takemura
发明人： Hongyong Zhang , Hideki Uochi , Toru Takayama , Shunpei Yamazaki , Yasuhiko Takemura
IPC分类号： H01L21/20 , H01L21/00 , H01L21/324 , H01L21/336 , H01L27/12 , H01L29/02 , H01L29/78 , H01L29/786 , H01L21/84
CPC分类号： H01L21/2022 , H01L27/1281 , H01L29/66757
摘要： A process for fabricating a semiconductor by crystallizing a silicon film in a substantially amorphous state by annealing it at a temperature not higher than the crystallization temperature of amorphous silicon, and it comprises forming selectively, on the surface or under an amorphous silicon film, a coating, particles, clusters, and the like containing nickel, iron, cobalt, platinum or palladium either as a pure metal or a compound thereof such as a silicide, a salt, and the like, shaped into island-like portions, linear portions, stripes, or dots; and then annealing the resulting structure at a temperature lower than the crystallization temperature of an amorphous silicon by 20 to 150.degree. C.
摘要翻译：一种通过在不高于非晶硅的结晶温度的温度下进行退火将基本无定形态的硅膜结晶化的半导体制造方法，其包括在表面上或非晶硅膜下选择性地形成涂层，含有镍，铁，钴，铂或钯的颗粒，簇等作为纯金属或其化合物，例如硅化物，盐等，成形为岛状部分，线状部分，条纹，或点; 然后在低于非晶硅的结晶温度的温度下将所得结构退火20〜150℃。

62. 发明授权

US5956579A Semiconductor, semiconductor device, and method for fabricating the same 失效
公开(公告)号：US5956579A
公开(公告)日：1999-09-21
申请号：US893361
申请日：1997-07-15
申请人： Shunpei Yamazaki , Yasuhiko Takemura , Hongyong Zhang , Toru Takayama , Hideki Uochi
发明人： Shunpei Yamazaki , Yasuhiko Takemura , Hongyong Zhang , Toru Takayama , Hideki Uochi
IPC分类号： H01L29/78 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/786 , H01L21/00
CPC分类号： H01L29/78696 , H01L21/2022 , H01L21/2026 , H01L27/1277 , H01L29/66757 , H01L29/78618
摘要： Method of fabricating semiconductor devices such as thin-film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the silicon film. Islands, stripes, lines, or dots of nickel, iron, cobalt, or platinum, silicide, acetate, or nitrate of nickel, iron, cobalt, or platinum, film containing various salts, particles, or clusters containing at least one of nickel, iron, cobalt, and platinum are used as starting materials for crystallization. These materials are formed on or under the amorphous silicon film.

63. 发明授权

US5843225A Process for fabricating semiconductor and process for fabricating semiconductor device 失效
标题翻译：用于制造半导体的工艺和用于制造半导体器件的工艺
公开(公告)号：US5843225A
公开(公告)日：1998-12-01
申请号：US479720
申请日：1995-06-07
申请人： Toru Takayama , Yasuhiko Takemura , Hongyong Zhang , Shunpei Yamazaki
发明人： Toru Takayama , Yasuhiko Takemura , Hongyong Zhang , Shunpei Yamazaki
IPC分类号： H01L21/20 , H01L21/336 , H01L27/12 , H01L29/786 , C30B1/10
CPC分类号： H01L21/2022 , H01L21/2026 , H01L27/12 , H01L29/66757 , H01L29/78654 , H01L29/78675
摘要： A process for fabricating a semiconductor at a lower crystallization temperature and yet at a shorter period of time, which comprises forming an insulator coating on a substrate; exposing said insulator coating to a plasma; forming an amorphous silicon film on said insulator coating after its exposure to said plasma; and heat treating said silicon film in the temperature range of from 400.degree. to 650.degree. C. or at a temperature not higher than the glass transition temperature of the substrate. The nucleation sites are controlled by selectively exposing the amorphous silicon film to a plasma or by selectively applying a substance containing elements having a catalytic effect thereto. A process for fabricating a thin film transistor using the same is also disclosed.
摘要翻译：一种制造半导体的方法，该半导体在较低的结晶温度下并且在较短的时间内，其包括在基片上形成绝缘体涂层; 将所述绝缘体涂层暴露于等离子体; 在暴露于所述等离子体之后，在所述绝缘体涂层上形成非晶硅膜; 在400〜650℃的温度或不高于基板的玻璃化转变温度的温度下对所述硅膜进行热处理。通过选择性地将非晶硅膜暴露于等离子体或通过选择性地施加含有其催化作用的元素的物质来控制成核位点。还公开了使用其制造薄膜晶体管的工艺。

64. 发明授权

US5609774A Apparatus for microwave processing in a magnetic field 失效
标题翻译：磁场微波处理装置
公开(公告)号：US5609774A
公开(公告)日：1997-03-11
申请号：US194571
申请日：1994-02-10
申请人： Shunpei Yamazaki , Masaya Kadono , Kenji Itoh , Toru Takayama , Yasuyuki Arai , Noriya Ishida
发明人： Shunpei Yamazaki , Masaya Kadono , Kenji Itoh , Toru Takayama , Yasuyuki Arai , Noriya Ishida
IPC分类号： H01J37/32 , H01L21/302
CPC分类号： H01J37/32449 , H01J37/32192 , H01J37/3244
摘要： A microwave-assisted plasma processing apparatus has a reaction chamber in which a substrate holder is provided to support a substrate to be treated. The holder is formed congruent with the inside of reaction chamber and located to substantially separate a reaction space in the reaction chamber save for a narrow clearance therebetween through which exhausted gas passes from said reaction space into said auxiliary space. By this structure, high density plasmas can be formed in the reaction chamber without substantial loss of input microwave energy.
摘要翻译：微波辅助等离子体处理装置具有反应室，在该反应室中设置有用于支撑被处理基板的基板支架。保持器与反应室的内部形成一致并且被设置为基本上分离反应室中的反应空间，除了其间的窄间隙，排出的气体从所述反应空间通过所述反应空间进入所述辅助空间。通过这种结构，可以在反应室中形成高密度等离子体，而不会大量损失输入的微波能量。

65. 发明授权

US08634050B2 Liquid crystal display device and method for manufacturing the same 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US08634050B2
公开(公告)日：2014-01-21
申请号：US12108614
申请日：2008-04-24
申请人： Shunpei Yamazaki , Toru Takayama
发明人： Shunpei Yamazaki , Toru Takayama
IPC分类号： G02F1/1339
CPC分类号： G02F1/1339 , G02F1/1341 , G02F2001/13415
摘要： A liquid crystal display device using a plastic substrate becomes required to have high resolution, high opening ratio, high reliability, or the like, with the increasing of a screen size. Besides, high productivity and cost reduction is also required. According to the present invention, a protective film 123 comprising at least one silicon nitride film, which is formed by a ratio frequency sputtering using a silicon target, is provided over an opposing substrate (a flexible substrate); sealant 112 is drawn; a liquid crystal material 114 is dropped over the opposing substrate in vacuo; and the opposing substrate is pasted to a flexible substrate 110 provided with a pixel electrode 111 and a columnar spacer 115.
摘要翻译：随着屏幕尺寸的增加，使用塑料基板的液晶显示装置需要具有高分辨率，高开口率，高可靠性等。此外，还需要高生产率和成本降低。根据本发明，在相对的基板（柔性基板）上设置包括通过使用硅靶的比率频率溅射形成的至少一个氮化硅膜的保护膜123。抽出密封剂112; 将液晶材料114真空滴在相对的基板上; 并且将相对的基板粘贴到设置有像素电极111和柱状间隔物115的柔性基板110上。

66. 发明授权

US08634041B2 Liquid crystal display device and manufacturing method of liquid crystal display device 有权
标题翻译：液晶显示装置及液晶显示装置的制造方法
公开(公告)号：US08634041B2
公开(公告)日：2014-01-21
申请号：US13466406
申请日：2012-05-08
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Akio Endo , Yasuyuki Arai
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Akio Endo , Yasuyuki Arai
IPC分类号： G02F1/1335
CPC分类号： G02F1/1362 , G02F1/133305 , G02F1/133603 , G02F2001/13613 , H01L27/14678 , H01L2221/68359 , H01L2221/68368 , H01L2224/48465 , H01L2224/73265 , H01L2224/8592
摘要： To sophisticate a portable electronic appliance without hindering reduction of the weight and the size, more specifically, to sophisticate a liquid crystal display apparatus installed in a portable electronic appliance without hindering the mechanical strength, a liquid crystal display apparatus includes a first plastic substrate, a light-emitting device which is disposed over the first plastic substrate, resin which covers the light-emitting device, an insulating film which is in contact with the resin, a semiconductor device which is in contact with the insulating film, a liquid crystal cell which is electrically connected to the semiconductor device, and a second plastic substrate, wherein the semiconductor device and the liquid crystal cell are disposed between the first plastic substrate and the second plastic substrate.
摘要翻译：为了使便携式电子设备复杂化而不妨碍重量和尺寸的减小，更具体地说，为了使安装在便携式电子设备中的液晶显示装置复杂化而不会妨碍机械强度，液晶显示装置包括第一塑料基板，布置在第一塑料基板上的发光装置，覆盖发光装置的树脂，与树脂接触的绝缘膜，与绝缘膜接触的半导体装置，液晶单元，电连接到半导体器件和第二塑料基板，其中半导体器件和液晶单元设置在第一塑料基板和第二塑料基板之间。

67. 发明授权

US08278195B2 Plasma CVD apparatus 有权
标题翻译：等离子体CVD装置
公开(公告)号：US08278195B2
公开(公告)日：2012-10-02
申请号：US13287597
申请日：2011-11-02
申请人： Shunpei Yamazaki , Toru Takayama , Mitsunori Sakama , Hisashi Abe , Hiroshi Uehara , Mika Ishiwata
发明人： Shunpei Yamazaki , Toru Takayama , Mitsunori Sakama , Hisashi Abe , Hiroshi Uehara , Mika Ishiwata
IPC分类号： H01L21/469
CPC分类号： H01J37/32477 , C23C16/4401 , C23C16/5096 , Y10S438/905
摘要： In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber 104 with a power source 113, a vacuum exhausting means 118, and a reaction gas introduction pipe 114, plasma 115 is generated in a space surrounded by an electrode 111, a substrate holder 112, and an insulator 120.
摘要翻译：在等离子体CVD装置中，防止了不必要的放电，例如电弧放电，由于附着在反应室上的膜的剥离引起的颗粒的量减少，并且在该设备的工作时间内有助于生产的时间的百分比增加同时保持设备的扩大和易于加工的性能。等离子体CVD装置被构造成使得在具有电源113，真空排气装置118和反应气体引入管114的导电反应室104中，在由电极111围绕的空间中产生等离子体115，衬底保持器 112和绝缘体120。

68. 发明申请

US20120175619A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20120175619A1
公开(公告)日：2012-07-12
申请号：US13367805
申请日：2012-02-07
申请人： Shunpei YAMAZAKI , Toru Takayama , Satoshi Murakami , Hajime Kimura
发明人： Shunpei YAMAZAKI , Toru Takayama , Satoshi Murakami , Hajime Kimura
IPC分类号： H01L33/08
CPC分类号： G02F1/1368 , G02F1/133305 , G02F1/136277 , H01L27/3244 , H01L27/3258 , H01L27/3265 , H01L51/5237 , H01L2251/5315 , H05B33/04
摘要： A structure for preventing deteriorations of a light-emitting device and retaining sufficient capacitor elements (condenser) required by each pixel is provided. A first passivation film, a second metal layer, a flattening film, a barrier film, and a third metal layer are stacked in this order over a transistor. A side face of a first opening provided with the flattening film is covered by the barrier film, a second opening is formed inside the first opening, and a third metal layer is connected to a semiconductor via the first opening and the second opening. A capacitor element that is formed of a lamination of a semiconductor of a transistor, a gate insulating film, a gate electrode, the first passivation film, and the second metal layer is provided.
摘要翻译：提供一种用于防止发光装置的劣化并保留每个像素所需的足够的电容器元件（电容器）的结构。依次层叠第一钝化膜，第二金属层，平坦化膜，阻挡膜和第三金属层。设置有平坦化膜的第一开口的侧面由阻挡膜覆盖，第一开口内部形成第二开口，第三金属层经由第一开口和第二开口连接到半导体。提供了由晶体管，栅极绝缘膜，栅电极，第一钝化膜和第二金属层的半导体层叠形成的电容器元件。

69. 发明授权

US08129721B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08129721B2
公开(公告)日：2012-03-06
申请号：US11396436
申请日：2006-04-03
申请人： Shunpei Yamazaki , Jun Koyama , Toru Takayama , Toshiji Hamatani
发明人： Shunpei Yamazaki , Jun Koyama , Toru Takayama , Toshiji Hamatani
IPC分类号： H01L29/04
CPC分类号： G02F1/13454 , G02F1/136286 , G02F1/1368 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78627 , H01L29/78645 , H01L29/78684
摘要： The invention primarily provides gate electrodes and gate wirings permitting large-sized screens for active matrix-type display devices, wherein, in order to achieve this object, the construction of the invention is a semiconductor device having, on the same substrate, a pixel TFT provided in a display region and a driver circuit TFT provided around the display region, wherein the gate electrodes of the pixel TFT and the driver circuit TFT are formed from a first conductive layer, the gate electrodes are in electrical contact through connectors with gate wirings formed from a second conductive layer, and the connectors are provided outside the channel-forming regions of the pixel TFT and the driver circuit TFT.
摘要翻译：本发明主要提供允许用于有源矩阵型显示装置的大尺寸屏幕的栅极电极和栅极布线，其中为了实现该目的，本发明的结构是在同一基板上具有像素TFT 设置在显示区域和设置在显示区域周围的驱动电路TFT，其中像素TFT和驱动电路TFT的栅电极由第一导电层形成，栅电极通过与形成的栅极布线的连接器电接触并且连接器设置在像素TFT和驱动电路TFT的沟道形成区域的外侧。

70. 发明授权

US08120031B2 Display device including an opening formed in a gate insulating film, a passivation film, and a barrier film 有权
标题翻译：显示装置包括形成在栅极绝缘膜中的开口，钝化膜和阻挡膜
公开(公告)号：US08120031B2
公开(公告)日：2012-02-21
申请号：US11882146
申请日：2007-07-31
申请人： Shunpei Yamazaki , Toru Takayama , Satoshi Murakami , Hajime Kimura
发明人： Shunpei Yamazaki , Toru Takayama , Satoshi Murakami , Hajime Kimura
IPC分类号： H01L29/04 , H01L27/01 , H01L23/58
CPC分类号： G02F1/1368 , G02F1/133305 , G02F1/136277 , H01L27/3244 , H01L27/3258 , H01L27/3265 , H01L51/5237 , H01L2251/5315 , H05B33/04
摘要： A structure for preventing deteriorations of a light-emitting device and retaining sufficient capacitor elements (condenser) required by each pixel is provided. A first passivation film, a second metal layer, a flattening film, a barrier film, and a third metal layer are stacked in this order over a transistor. A side face of a first opening provided with the flattening film is covered by the barrier film, a second opening is formed inside the first opening, and a third metal layer is connected to a semiconductor via the first opening and the second opening. A capacitor element that is formed of a lamination of a semiconductor of a transistor, a gate insulating film, a gate electrode, the first passivation film, and the second metal layer is provided.
摘要翻译：提供一种用于防止发光装置的劣化并保留每个像素所需的足够的电容器元件（电容器）的结构。依次层叠第一钝化膜，第二金属层，平坦化膜，阻挡膜和第三金属层。设置有平坦化膜的第一开口的侧面由阻挡膜覆盖，第一开口内部形成第二开口，第三金属层经由第一开口和第二开口连接到半导体。提供了由晶体管，栅极绝缘膜，栅电极，第一钝化膜和第二金属层的半导体层叠形成的电容器元件。

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