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61. 发明申请

US20100142576A1 (Al,Ga,In)N DIODE LASER FABRICATED AT REDUCED TEMPERATURE 有权
标题翻译：（Al，Ga，In）N二极管激光器在降低温度下制成
公开(公告)号：US20100142576A1
公开(公告)日：2010-06-10
申请号：US12476208
申请日：2009-06-01
申请人： Daniel A. Cohen , Steven P. DenBaars , Shuji Nakamura
发明人： Daniel A. Cohen , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01S5/323 , H01S5/00 , H01L33/00
CPC分类号： H01S5/3013 , B82Y20/00 , H01L21/02631 , H01L33/32 , H01S5/0215 , H01S5/0217 , H01S5/2009 , H01S5/2054 , H01S5/22 , H01S5/3211 , H01S5/3213 , H01S5/3214 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A method of fabricating an (Al,Ga,In)N laser diode, comprising depositing one or more III-N layers upon a growth substrate at a first temperature, depositing an indium containing laser core at a second temperature upon layers deposited at a first temperature, and performing all subsequent fabrication steps under conditions that inhibit degradation of the laser core, wherein the conditions are a substantially lower temperature than the second temperature.
摘要翻译：一种制造（Al，Ga，In）N激光二极管的方法，包括在第一温度下在生长衬底上沉积一个或多个III-N层，在第一温度下沉积含有铟的激光芯，温度，并且在抑制激光芯的退化的条件下执行所有随后的制造步骤，其中所述条件是比所述第二温度明显更低的温度。

62. 发明申请

US20100111808A1 GROUP-III NITRIDE MONOCRYSTAL WITH IMPROVED CRYSTAL QUALITY GROWN ON AN ETCHED-BACK SEED CRYSTAL AND METHOD OF PRODUCING THE SAME 审中-公开
标题翻译：具有改性晶体质量的III族氮化物单晶在其背面种子晶体及其生产方法
公开(公告)号：US20100111808A1
公开(公告)日：2010-05-06
申请号：US12612477
申请日：2009-11-04
申请人： Siddha Pimputkar , Derrick S. Kamber , Makoto Saito , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Siddha Pimputkar , Derrick S. Kamber , Makoto Saito , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： C30B25/00 , C01B21/06
CPC分类号： C30B29/403 , C30B7/105
摘要： The present invention provides a method for growing group III-nitride crystals wherein the group III-nitride crystal growth occurs on an etched seed crystal. The etched seed is fabricated prior to growth using a temperature profile which produces a high solubility of the group III-nitride material in a seed crystals zone as compared to a source materials zone. The measured X-ray diffraction of the obtained crystals have significantly narrower Full Width at Half Maximum values as compared to crystals grown without etch back of the seed crystal surfaces prior to growth.
摘要翻译：本发明提供一种用于生长III族氮化物晶体的方法，其中III族氮化物晶体生长发生在蚀刻晶种上。在生长之前使用温度分布来制造蚀刻的种子，该温度曲线与源材料区相比在晶种区产生III族氮化物材料的高溶解度。所获得的晶体的测量的X射线衍射与在生长之前晶种表面没有回蚀而生长的晶体相比，具有显着窄的半峰全宽。

63. 发明申请

US20100108985A1 OPTOELECTRONIC DEVICE BASED ON NON-POLAR AND SEMI-POLAR ALUMINUM INDIUM NITRIDE AND ALUMINUM INDIUM GALLIUM NITRIDE ALLOYS 有权
标题翻译：基于非极性和半极性铝氮化铟和氮化铝氮化镓合金的光电器件
公开(公告)号：US20100108985A1
公开(公告)日：2010-05-06
申请号：US12610945
申请日：2009-11-02
申请人： Roy B. Chung , Zhen Chen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Roy B. Chung , Zhen Chen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/2009 , H01S5/3201 , H01S5/3211 , H01S5/34333
摘要： A high-power and high-efficiency light emitting device with emission wavelength (λpeak) ranging from 280 nm to 360 nm is fabricated. The new device structure uses non-polar or semi-polar AlInN and AlInGaN alloys grown on a non-polar or semi-polar bulk GaN substrate.
摘要翻译：制造了发射波长（λpeak）范围从280nm到360nm的大功率和高效率发光器件。新器件结构使用在非极性或半极性体积GaN衬底上生长的非极性或半极性AlInN和AlInGaN合金。

64. 发明授权

US07687293B2 Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition 有权
标题翻译：通过金属有机化学气相沉积来增强半极性（Al，In，Ga，B）N生长的方法
公开(公告)号：US07687293B2
公开(公告)日：2010-03-30
申请号：US11655572
申请日：2007-01-19
申请人： Hiroshi Sato , John F. Kaeding , Michael Iza , Troy J. Baker , Benjamin A. Haskell , Steven P. DenBaars , Shuji Nakamura
发明人： Hiroshi Sato , John F. Kaeding , Michael Iza , Troy J. Baker , Benjamin A. Haskell , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L21/00 , H01L29/00
CPC分类号： H01L29/045 , C30B25/02 , C30B29/403 , C30B29/406 , H01L21/02365 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/02516 , H01L21/0254 , H01L21/0262
摘要： A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al,In,Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
摘要翻译：通过使用含有至少一些铟的（Al，In，Ga）N成核层，通过金属有机化学气相沉积（MOCVD）增强器件质量的平面半极性半导体薄膜的生长的方法。具体地，该方法包括将衬底装载到反应器中，在氮气和/或氢气和/或氨气流下加热衬底，在加热衬底上沉积In x Ga 1-x N成核层，在半导体衬底上沉积半极性氮化物半导体薄膜 In x Ga 1-x N成核层，并在氮气过压下冷却该衬底。

65. 发明申请

US20100075107A1 HEXAGONAL WURTZITE SINGLE CRYSTAL AND HEXAGONAL WURTZITE SINGLE CRYSTAL SUBSTRATE 审中-公开
标题翻译：六角形WURTZITE单晶和六角形WURTZITE单晶基板
公开(公告)号：US20100075107A1
公开(公告)日：2010-03-25
申请号：US12474134
申请日：2009-05-28
申请人： Makoto Saito , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Makoto Saito , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： C01B21/06 , B32B5/00 , C30B23/00
CPC分类号： C30B29/403 , C30B7/10 , C30B25/20 , C30B29/406 , Y10T428/24355
摘要： A technique for growing high quality bulk hexagonal single crystals using a solvo-thermal method, and a technique for achieving the high quality and high growth rate at the same time. The crystal quality strongly depends on the growth planes, wherein a nonpolar or semipolar seed surface such as {10-10}, {10-11}, {10-1-1}, {10-12}, {10-1-2}, {11-20}, {11-22}, {11-2-2} gives a higher crystal quality as compared to a c-plane seed surface such as (0001) and (000-1). Also, the growth rate strongly depends on the growth planes, wherein a semipolar seed surface such as {10-12}, {10-1-2}, {11-22}, {11-2-2} gives a higher growth rate. High crystal quality and high growth rate are achievable at the same time by choosing the suitable growth plane. The crystal quality also depends on the seed surface roughness, wherein high crystal quality is achievable when the nonpolar or semipolar seed surface RMS roughness is below 100 nm; on the other hand, the crystal grown from the Ga-face or N-face results in poor crystal quality, even though grown from an atomically smooth surface.
摘要翻译：使用溶剂热法生长高质量体积六边形单晶的技术，以及同时实现高质量和高生长速率的技术。晶体质量主要取决于生长面，其中非极性或半极性种子表面如{10-10}，{10-11}，{10-1-1}，{10-12}，{10-1-1} 2}，{11-20}，{11-22}，{11-2-2}与c面种子表面（0001）和（000-1）相比，具有更高的晶体质量。此外，生长速率强烈地取决于生长平面，其中诸如{10-12}，{10-1-2}，{11-22}，{11-2-2}的半极性种子表面产生更高的生长率。通过选择合适的生长平面，可以同时实现高结晶质量和高生长速度。晶体质量还取决于种子表面粗糙度，其中当非极性或半极性种子表面RMS粗糙度低于100nm时可实现高结晶质量; 另一方面，从Ga面或N面生长的晶体即使从原子光滑的表面生长也会导致差的晶体质量。

66. 发明申请

US20090141502A1 LIGHT OUTPUT ENHANCED GALLIUM NITRIDE BASED THIN LIGHT EMITTING DIODE 审中-公开
标题翻译：光输出增强型氮化钠基底层发光二极管
公开(公告)号：US20090141502A1
公开(公告)日：2009-06-04
申请号：US12325939
申请日：2008-12-01
申请人： Junichi Sonoda , Shuji Nakamura , Kenji Iso , Steven P. DenBaars , Makoto Saito
发明人： Junichi Sonoda , Shuji Nakamura , Kenji Iso , Steven P. DenBaars , Makoto Saito
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/02 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L33/44
摘要： A gallium nitride (GaN) based light emitting device, wherein the device comprises a first surface and a second surface, and the first surface and second surface are separated by a thickness of less than 100 micrometers, and preferably less than 20 micrometers. The first surface may be roughened or textured. A silver or silver alloy may be deposited on the second surface. The second surface of the device may be bonded to a permanent substrate.
摘要翻译：一种基于氮化镓（GaN）的发光器件，其中所述器件包括第一表面和第二表面，并且所述第一表面和第二表面的厚度小于100微米，优选小于20微米。第一表面可以是粗糙的或有纹理的。银或银合金可以沉积在第二表面上。装置的第二表面可以结合到永久基板。

67. 发明申请

US20090121250A1 HIGH LIGHT EXTRACTION EFFICIENCY LIGHT EMITTING DIODE (LED) USING GLASS PACKAGING 审中-公开
标题翻译：使用玻璃包装的高光提取效率发光二极管（LED）
公开(公告)号：US20090121250A1
公开(公告)日：2009-05-14
申请号：US12275136
申请日：2008-11-20
申请人： Steven P. DenBaars , Shuji Nakamura , Hisashi Masui
发明人： Steven P. DenBaars , Shuji Nakamura , Hisashi Masui
IPC分类号： H01L33/00 , H01L21/02
CPC分类号： H01L33/54 , H01L33/22 , H01L33/44 , H01L33/483 , H01L33/507 , H01L33/56 , H01L2224/16245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2924/181 , H01L2933/0091 , H01L2924/00014 , H01L2924/00012
摘要： An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED) combined with a shaped optical element in which the directional light from the ZnO cone or any high refractive index material in contact with the LED surface entering the shaped optical element is extracted to air.
摘要翻译： An（Al，Ga，In）N和ZnO直接晶圆键合发光二极管（LED）与成形光学元件组合，其中来自ZnO圆锥的定向光或任何高折射率材料与LED表面接触进入成形光学元件被抽取到空气中。

68. 发明申请

US20090039356A1 PLANAR NONPOLAR M-PLANE GROUP III-NITRIDE FILMS GROWN ON MISCUT SUBSTRATES 审中-公开
标题翻译： PLANAR NONPOLAR M-PLANE组III-NITRIDE FILMS在异物基底上
公开(公告)号：US20090039356A1
公开(公告)日：2009-02-12
申请号：US12189026
申请日：2008-08-08
申请人： Kenji Iso , Hisashi Yamada , Makoto Saito , Asako Hirai , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Kenji Iso , Hisashi Yamada , Makoto Saito , Asako Hirai , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： H01L33/00 , H01L21/205 , H01L29/20
CPC分类号： C30B25/18 , B82Y20/00 , C30B25/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L29/045 , H01L29/2003 , H01L33/16 , H01L33/32 , H01S5/3202 , H01S5/34333 , H01S2304/12
摘要： A nonpolar III-nitride film grown on a miscut angle of a substrate. The miscut angle towards the direction is 0.75° or greater miscut and less than 27° miscut towards the direction. Surface undulations are suppressed and may comprise faceted pyramids. A device fabricated using the film is also disclosed. A nonpolar III-nitride film having a smooth surface morphology fabricated using a method comprising selecting a miscut angle of a substrate upon which the nonpolar III-nitride films are grown in order to suppress surface undulations of the nonpolar III-nitride films. A nonpolar III-nitride-based device grown on a film having a smooth surface morphology grown on a miscut angle of a substrate which the nonpolar III-nitride films are grown. The miscut angle may also be selected to achieve long wavelength light emission from the nonpolar film.
摘要翻译：在基板的杂散角上生长的非极性III族氮化物膜。朝向<000-1>方向的误差角为0.75°或更大，而朝向<000-1>方向小于27°。表面起伏被抑制，并且可以包括刻面金字塔。还公开了使用该膜制造的器件。使用包括选择生长非极性III族氮化物膜的衬底的误差角以抑制非极性III族氮化物膜的表面波动的方法制造具有光滑表面形态的非极性III族氮化物膜。生长在具有平滑表面形态的膜上生长的非极性III族氮化物基器件，其生长在非极性III族氮化物膜生长的衬底的杂散角上。还可以选择误差角以实现来自非极性膜的长波长发光。

69. 发明授权

US07427555B2 Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy 有权
标题翻译：通过氢化物气相外延生长平面非极性氮化镓
公开(公告)号：US07427555B2
公开(公告)日：2008-09-23
申请号：US10537385
申请日：2003-07-15
申请人： Benjamin A. Haskell , Paul T. Fini , Shigemasa Matsuda , Michael D. Craven , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Benjamin A. Haskell , Paul T. Fini , Shigemasa Matsuda , Michael D. Craven , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： H01L21/205
CPC分类号： C30B25/02 , C30B29/40 , C30B29/406 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02587 , H01L21/02609 , H01L21/0262
摘要： Highly planar non-polar GaN films are grown by hydride vapor phase epitaxy (HVPE). The resulting films are suitable for subsequent device regrowth by a variety of growth techniques.
摘要翻译：通过氢化物气相外延（HVPE）生长高平面非极性GaN膜。所得到的膜适合于通过各种生长技术的后续装置再生长。

70. 发明申请

US20080179607A1 Non-polar and semi-polar light emitting devices 有权
标题翻译：非极性和半极性发光器件
公开(公告)号：US20080179607A1
公开(公告)日：2008-07-31
申请号：US12001227
申请日：2007-12-11
申请人： Steven P. DenBaars , Mathew C. Schmidt , Kwang Choong Kim , James S. Speck , Shuji Nakamura
发明人： Steven P. DenBaars , Mathew C. Schmidt , Kwang Choong Kim , James S. Speck , Shuji Nakamura
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01L33/16 , H01L33/22 , H01S5/2201 , H01S5/2231 , H01S5/3404 , H01S5/34333
摘要： An (Al, Ga, In)N light emitting device, such as a light emitting diode (LED), in which high light generation efficiency is realized by fabricating the device on non-polar or semi-polar III-Nitride crystal geometries. Because non-polar and semi-polar emitting devices have significantly lower piezoelectric effects than c-plane emitting devices, higher efficiency emitting devices at higher current densities can be realized.
摘要翻译：一种（Al，Ga，In）N发光器件，例如发光二极管（LED），其中通过以非极性或半极性III氮化物晶体几何形状制造器件来实现高发光效率。因为非极性和半极性发射器件具有比c面发射器件显着更低的压电效应，所以可以实现在更高电流密度下的更高效率的发射器件。

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