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61. 发明授权

US5792705A Optimized planarization process for SOG filled vias 失效
标题翻译：优化SOG填充通孔的平面化过程
公开(公告)号：US5792705A
公开(公告)日：1998-08-11
申请号：US921882
申请日：1997-09-02
申请人： Chin-Kun Wang , Yuan-Chang Huang , Iman Hsu
发明人： Chin-Kun Wang , Yuan-Chang Huang , Iman Hsu
IPC分类号： H01L21/3105 , H01L21/4763
CPC分类号： H01L21/31053 , Y10S438/903
摘要： A planarization process, featuring removal of spin on glass, used to fill narrow spaces between metal lines, has been developed. A dual dielectric, of underlying silicon oxide, and overlying silicon nitride, are initially used to passivate the metal lines, followed by the spin on glass fill. A RIE etchback of the spin on glass proceeds to a point in which the silicon nitride, on the metal line, is exposed. The exposed silicon nitride is then removed leaving a silicon oxide passivated metal line, and seamless insulator filled spaces. The ability of not exposing the passivating silicon oxide to RIE echback process, allows seamless fills to result.
摘要翻译：已经开发了用于填充金属线之间的狭窄空间的去除玻璃上的自旋的平坦化工艺。最初使用双电介质的下面的氧化硅和上覆的氮化硅来钝化金属线，然后在玻璃填充物上旋转。玻璃上的自旋的RIE回蚀进行到金属线上的氮化硅被暴露的点。然后去除暴露的氮化硅，留下氧化硅钝化金属线，以及无缝绝缘体填充空间。将钝化氧化硅暴露于RIE echback工艺的能力，可以实现无缝填充。

62. 发明授权

US5747379A Method of fabricating seamless tungsten plug employing tungsten redeposition and etch back 失效
标题翻译：使用钨再沉积和回蚀刻制造无缝钨丝塞的方法
公开(公告)号：US5747379A
公开(公告)日：1998-05-05
申请号：US868472
申请日：1997-06-03
申请人： Yuan-Chang Huang , Kuan-Hui Chang
发明人： Yuan-Chang Huang , Kuan-Hui Chang
IPC分类号： H01L21/768 , H01L21/283
CPC分类号： H01L21/76877
摘要： A process has been developed in which seamless tungsten plugs are used to fill deep, narrow contact holes. The process features initially forming a tungsten plug in a contact hole, via tungsten LPCVD processing, followed by an RIE etch back, and recessing process. A second tungsten LPCVD procedure is then used to fill seams or defects in the underlying tungsten plug. Another RIE etch back procedure is then employed to create a seamless, composite tungsten plug structure, in the deep, narrow contact hole.
摘要翻译：已经开发了一种无缝钨丝塞用于填充深而窄的接触孔的方法。该工艺特征最初通过钨LPCVD处理在接触孔中形成钨塞，随后进行RIE回蚀和凹陷处理。然后使用第二钨LPCVD步骤来填充下面的钨插塞中的接缝或缺陷。然后使用另一个RIE回蚀程序在深的窄的接触孔中产生无缝的，复合的钨插塞结构。

63. 发明授权

US5679211A Spin-on-glass etchback planarization process using an oxygen plasma to remove an etchback polymer residue 失效
标题翻译：使用氧等离子体旋转玻璃回蚀平面化处理以去除回蚀聚合物残渣
公开(公告)号：US5679211A
公开(公告)日：1997-10-21
申请号：US529872
申请日：1995-09-18
申请人： Yuan-Chang Huang
发明人： Yuan-Chang Huang
IPC分类号： H01L21/308 , H01L21/3105 , H01L21/306
CPC分类号： H01L21/31055 , H01L21/3086
摘要： A method for improving the etch back uniformity of a SOG layer by removing an etch back resistant polymer which builds up on the SOG layer during the etch back process. According to the present invention, a first insulation layer and a SOG layer are formed on a substrate. The SOG layer is partially etched back in a fluorocarbon containing plasma which forms a polymer residue on the SOG layer surface. The SOG layer is then treated in situ with an oxygen containing plasma to remove any of the etch resistant polymer residue on the SOG layer surface. The above in situ etch and oxygen containing plasma treatment of the spin-on-glass layer are repeated until the SOG layer is etched back to the desired thickness.
摘要翻译：一种用于通过在回蚀刻工艺期间去除在SOG层上积聚的防反蚀性聚合物来改善SOG层的回蚀均匀性的方法。根据本发明，在基板上形成第一绝缘层和SOG层。 SOG层在含氟碳含量等离子体中被部分地回蚀，在SOG层表面形成聚合物残渣。然后用含氧等离子体原位处理SOG层以除去SOG层表面上的任何耐蚀刻聚合物残余物。重复上述原位蚀刻和旋涂玻璃层的含氧等离子体处理，直到SOG层被回蚀到所需的厚度。

64. 发明授权

US5671119A Process for cleaning an electrostatic chuck of a plasma etching apparatus 失效
标题翻译：用于清洁等离子体蚀刻装置的静电卡盘的方法
公开(公告)号：US5671119A
公开(公告)日：1997-09-23
申请号：US620184
申请日：1996-03-22
申请人： Yuan-Chang Huang , Shzh-Kuei Yen
发明人： Yuan-Chang Huang , Shzh-Kuei Yen
IPC分类号： B08B1/00 , H01L21/683 , H02N13/00
CPC分类号： H01L21/6831 , B08B1/00 , H01L21/6833 , H02N13/00
摘要： A method of cleaning an electrostatic chuck, wherein a soft, particle adherent, sheet of material is affixed to a dummy wafer. The dummy wafer is then placed on the electrostatic chuck, and DC power applied to the chuck electrode to build up an electrostatic force between the chuck and wafer. After the power is turned off, the wafer and sheet of material with the adhered particle contamination is removed.
摘要翻译：一种清洁静电卡盘的方法，其中将柔软的颗粒粘附的材料片固定到虚拟晶片。然后将虚拟晶片放置在静电卡盘上，并且将DC电力施加到卡盘电极以在卡盘和晶片之间建立静电力。电源关闭后，去除具有附着颗粒污染物的晶片和片材。

65. 发明授权

US5670019A Removal process for tungsten etchback precipitates 失效
标题翻译：钨回蚀沉淀物的去除工艺
公开(公告)号：US5670019A
公开(公告)日：1997-09-23
申请号：US606831
申请日：1996-02-26
申请人： Yuan-Chang Huang
发明人： Yuan-Chang Huang
IPC分类号： H01L21/02 , H01L21/3213 , H01L21/00 , B44C1/22 , C23F1/00
CPC分类号： H01L21/02071
摘要： This invention provides a method of cleaning integrated circuit wafers which effectively removes precipitates formed as a result of the tungsten etchback process. When tungsten is used to fill via holes in an inter-metal dielectric layer an adhesion layer of titanium nitride, TiN, is required to provide good adhesion. As a result of the tungsten etchback, wherein fluorine based etchants are used, precipitates of TiF.sub.3 can form which are extremely difficult to remove. Methods, such as in-situ bake after the tungsten etchback, are used to prevent the formation of the precipitates but do not remove them after they are formed. This invention teaches a method using a strong oxidizing agent, such as H.sub.2 O.sub.2, to cause an oxidation-reduction reaction which converts the precipitates to a water soluble form. The water soluble form of the precipitates are then removed using a water rinse and spin dry process.
摘要翻译：本发明提供了一种清洁集成电路晶片的方法，其有效地去除了由钨回蚀工艺形成的沉淀物。当钨用于填充金属间电介质层中的通孔时，需要氮化钛（TiN）的粘合层以提供良好的粘附性。作为钨回蚀的结果，其中使用氟基蚀刻剂，可以形成极难去除的TiF 3的析出物。使用诸如在钨回蚀之后的原位烘烤的方法来防止沉淀物的形成，但是在它们形成之后不能将其去除。本发明教导了使用强氧化剂如H 2 O 2的方法引起将沉淀物转化为水溶性形式的氧化还原反应。然后使用水冲洗和旋转干燥方法除去沉淀物的水溶性形式。

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