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61. 发明申请

US20080030908A1 Magnetoresistive effect element, thin-film magnetic head, method for manufacturing magnetoresistive effect element, and method for manufacturing thin-film magnetic head 审中-公开
标题翻译：磁阻效应元件，薄膜磁头，磁阻效应元件的制造方法以及制造薄膜磁头的方法
公开(公告)号：US20080030908A1
公开(公告)日：2008-02-07
申请号：US11812311
申请日：2007-06-18
申请人： Takeo Kagami , Kosuke Tanaka , Shinji Hara , Takayasu Kanaya , Nobuyoshi Morizumi
发明人： Takeo Kagami , Kosuke Tanaka , Shinji Hara , Takayasu Kanaya , Nobuyoshi Morizumi
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3932 , G11B2005/3996
摘要： A magnetoresistive effect (MR) element, a thin-film magnetic head having the MR element, a method for manufacturing the MR element, and a method for manufacturing the thin-film magnetic head are disclosed. The MR element, which uses electric current in a direction perpendicular to layer planes, includes a lower electrode layer, a MR multilayered structure formed on the lower electrode layer, a magnetic domain controlling bias layer that is disposed on both sides of the MR multilayered structure along the track-width direction and is made of a material at least partially including an hcp structure, a metal layer made of a material having a bcc structure formed on the magnetic domain controlling bias layer and the MR multilayered structure to cover the magnetic domain controlling bias layer and the MR multilayered structure, and an upper electrode layer formed on the metal layer.
摘要翻译：公开了磁阻效应（MR）元件，具有MR元件的薄膜磁头，MR元件的制造方法和制造薄膜磁头的方法。在垂直于层平面的方向上使用电流的MR元件包括下电极层，形成在下电极层上的MR多层结构，设置在MR多层结构的两侧的磁畴控制偏置层沿着轨道宽度方向并且由至少部分地包括hcp结构的材料制成，由在磁畴控制偏置层上形成的具有bcc结构的材料制成的金属层和MR多层结构以覆盖磁畴控制偏置层和MR多层结构，以及形成在金属层上的上电极层。

62. 发明授权

US08931254B2 Exhaust pipe injection control device 有权
标题翻译：排气管喷射控制装置
公开(公告)号：US08931254B2
公开(公告)日：2015-01-13
申请号：US13703217
申请日：2011-06-10
申请人： Naofumi Ochi , Shinji Hara , Kenzou Yaginuma
发明人： Naofumi Ochi , Shinji Hara , Kenzou Yaginuma
IPC分类号： F02M25/06 , F01N3/02 , F01N3/10 , F01N3/00 , F02M25/07 , F01N9/00 , F02D41/00 , F02B29/04 , F02D41/02
CPC分类号： F02M25/07 , F01N3/0253 , F01N9/002 , F01N2610/03 , F02B29/0406 , F02D41/0055 , F02D41/029 , F02D2200/0614 , F02D2200/101 , F02M26/08 , F02M26/15 , F02M26/23 , Y02T10/47
摘要： An exhaust pipe injection control device to optimally control a degree of exhaust gas recirculation (“EGR”) opening during diesel particulate filter (“DPF”) regeneration. The device includes a regeneration-time opening control unit which controls a degree of EGR opening of an EGR device during DPF regeneration, and a regeneration-time opening map in which an optimal degree of EGR opening of the EGR device during DPF regeneration is set in advance according to an engine rotation speed and a fuel injection amount of an engine. The regeneration-time opening control unit performs exhaust gas recirculation by referring to the regeneration-time opening map based on the engine rotation speed and the fuel injection amount of the engine and controlling the degree of EGR opening of the EGR device.
摘要翻译：一种用于在柴油机微粒过滤器（“DPF”）再生期间最佳地控制排气再循环（“EGR”）开度的排气管喷射控制装置。该装置包括在DPF再生期间控制EGR装置的EGR开度的再生时间打开控制部，以及在DPF再生期间设定EGR装置的EGR最佳程度的再生时间开度图根据发动机的转速和发动机的燃料喷射量而前进。再生时间打开控制部，根据发动机的转速和发动机的燃料喷射量，参照再生时间开始图进行废气再循环，控制EGR装置的EGR开度。

63. 发明授权

US08393074B1 Method of manufacturing thermally-assisted magnetic recording head and alignment apparatus 有权
标题翻译：制造热辅助磁记录头和对准装置的方法
公开(公告)号：US08393074B1
公开(公告)日：2013-03-12
申请号：US13267601
申请日：2011-10-06
申请人： Seiichi Takayama , Koji Shimazawa , Shinji Hara , Yasuhiro Ito , Nobuyuki Mori , Ryo Hosoi , Kazuaki Takanuki , Youichi Ando , Chimoto Sugiyama
发明人： Seiichi Takayama , Koji Shimazawa , Shinji Hara , Yasuhiro Ito , Nobuyuki Mori , Ryo Hosoi , Kazuaki Takanuki , Youichi Ando , Chimoto Sugiyama
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/314 , G11B5/6088 , G11B2005/0021 , Y10T29/49025 , Y10T29/49041 , Y10T29/49043 , Y10T29/4905 , Y10T29/5313 , Y10T29/53165
摘要： A method of manufacturing a thermally-assisted magnetic recording head includes: providing a light source unit including a laser diode; providing a slider having a thermally-assisted magnetic recording head section thereon, the thermally-assisted magnetic recording head section including a magnetic pole, an optical waveguide, and a plasmon generator, the magnetic pole and the optical waveguide both extending toward an air bearing surface, the plasmon generator being located between the magnetic pole and the optical waveguide; driving the laser diode to allow a light beam to be emitted therefrom, the light beam including both a TE polarization component and a TM polarization component; performing an alignment between the light source unit and the thermally-assisted magnetic recording head section, based on a light intensity distribution of the TE polarization component in the light beam which has been emitted from the laser diode and then passed through the optical waveguide; and bonding the light source unit to the slider after the alignment is completed.
摘要翻译：一种制造热辅助磁记录头的方法包括：提供包括激光二极管的光源单元; 提供一种在其上具有热辅助磁记录头部分的滑块，所述热辅助磁记录头部分包括磁极，光波导和等离子体发生器，所述磁极和光波导均朝空气轴承表面延伸所述等离子体发生器位于所述磁极和所述光波导之间; 驱动激光二极管以允许从其发射光束，所述光束包括TE偏振分量和TM偏振分量; 基于从激光二极管发射的光束中的TE偏振分量的光强度分布然后通过光波导，执行光源单元和热辅助磁记录头部之间的对准; 并且在对准完成之后将光源单元接合到滑块。

64. 发明授权

US08385021B2 Temperature assisted magnetic recording element having grounded near field light generator 有权
标题翻译：具有接地近场光发生器的温度辅助磁记录元件
公开(公告)号：US08385021B2
公开(公告)日：2013-02-26
申请号：US12722742
申请日：2010-03-12
申请人： Shinji Hara , Tsutomu Chou , Yoshihiro Tsuchiya
发明人： Shinji Hara , Tsutomu Chou , Yoshihiro Tsuchiya
IPC分类号： G11B5/31 , G11B5/02
CPC分类号： G11B5/314 , B82Y20/00 , G02B6/1226 , G11B5/3116 , G11B5/6005 , G11B5/6088 , G11B2005/0021
摘要： A plasmon generator positioned away from the substrate and extending to the air bearing surface (ABS) as facing a part of the waveguide. The plasmon generator has a propagation edge extending in a longitudinal direction. The propagation edge has an overlapping part overlapping the waveguide in the longitudinal direction, and a near field light generator positioned on the ABS and located in the vicinity of the edge part of the recording magnetic pole. The overlapping part of the propagation edge is coupled with the laser light propagating through the waveguide in a surface plasmon mode so that a surface plasmon is generated. The propagation edge propagates the surface plasmon generated in the overlapping part to the near field light generator. The magnetic recording element further has a grounding element electrically connecting the plasmon generator and the substrate.
摘要翻译：等离子体发生器远离基板定位并且面向波导的一部分延伸到空气轴承表面（ABS）。等离子体发生器具有沿纵向方向延伸的传播边缘。传播边缘具有在纵向上与波导重叠的重叠部分，以及位于ABS上且位于记录磁极的边缘部分附近的近场光发生器。传播边缘的重叠部分与以表面等离子体模式传播通过波导的激光耦合，从而产生表面等离子体激元。传播边缘将在重叠部分中产生的表面等离子体激元传播到近场光发生器。磁记录元件还具有电连接等离子体发生器和基板的接地元件。

65. 发明授权

US08345390B2 Magnetoresistive effect element in CPP-type structure and magnetic disk device 有权
标题翻译： CPP型结构和磁盘装置中的磁阻效应元件
公开(公告)号：US08345390B2
公开(公告)日：2013-01-01
申请号：US12379625
申请日：2009-02-26
申请人： Yoshihiro Tsuchiya , Shinji Hara , Tsutomu Chou , Hironobu Matsuzawa
发明人： Yoshihiro Tsuchiya , Shinji Hara , Tsutomu Chou , Hironobu Matsuzawa
IPC分类号： G11B5/39
CPC分类号： G01R33/098 , B82Y25/00 , G11B5/3906 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01L43/10 , Y10T29/49021 , Y10T428/1114 , Y10T428/1171
摘要： An MR element according to the present invention has the superior effects that further improve an MR ratio because a structure of a spacer layer 40 is configured of a certain three-layer structure with certain materials, and at least one of a first ferromagnetic layer 30 and a second ferromagnetic layer 50 contains a certain amount of an element selected from the group of nitrogen (N), carbon (C), and oxygen (O).
摘要翻译：根据本发明的MR元件具有进一步提高MR比的优越效果，因为间隔层40的结构由具有某些材料的特定三层结构构成，并且第一铁磁层30和第二铁磁层50含有一定量的选自氮（N），碳（C）和氧（O）的元素。

66. 发明授权

US08331063B2 Magnetoresistive effect element in CPP-type structure and magnetic disk device 有权
标题翻译： CPP型结构和磁盘装置中的磁阻效应元件
公开(公告)号：US08331063B2
公开(公告)日：2012-12-11
申请号：US12500907
申请日：2009-07-10
申请人： Shinji Hara , Tsutomu Chou , Yoshihiro Tsuchiya , Hironobu Matsuzawa
发明人： Shinji Hara , Tsutomu Chou , Yoshihiro Tsuchiya , Hironobu Matsuzawa
IPC分类号： G11B5/39
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3906 , H01L43/08
摘要： An MR element in a CPP-GMR structure includes a first ferromagnetic layer, a spacer layer that is epitaxially formed on the first ferromagnetic layer, a second ferromagnetic layer that is located on the spacer layer, and that is laminated with the first ferromagnetic layer to sandwich the spacer layer. A sense current flows along a lamination direction of the first and second ferromagnetic layers. Angle of magnetization directions of the first ferromagnetic layer and the second ferromagnetic layer relatively change due to an externally applied magnetic field.
摘要翻译： CPP-GMR结构中的MR元件包括第一铁磁层，外延形成在第一铁磁层上的间隔层，位于间隔层上的第二铁磁层，并且与第一铁磁层层压到夹住间隔层。感测电流沿着第一和第二铁磁层的层叠方向流动。第一铁磁层和第二铁磁层的磁化方向的角度由于外部施加的磁场而相对变化。

67. 发明授权

US08250737B2 Method for manufacturing head including light source unit for thermal assist 有权
标题翻译：制造头部的方法，包括用于热辅助的光源单元
公开(公告)号：US08250737B2
公开(公告)日：2012-08-28
申请号：US12904553
申请日：2010-10-14
申请人： Koji Shimazawa , Seiichi Takayama , Nobuyuki Mori , Yoshihiro Tsuchiya , Shinji Hara
发明人： Koji Shimazawa , Seiichi Takayama , Nobuyuki Mori , Yoshihiro Tsuchiya , Shinji Hara
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/314 , B82Y10/00 , B82Y25/00 , G11B5/1278 , G11B5/3967 , G11B5/6088 , G11B2005/001 , G11B2005/0021 , G11B2005/3996 , Y10T29/49021 , Y10T29/49032 , Y10T29/5313 , Y10T29/53191
摘要： Provided is a method for manufacturing a thermally-assisted magnetic recording head including a light source unit with a light source and a slider with an optical system. The method comprises steps of: adhering by suction the light source unit with a back holding jig; moving the back holding jig, then aligning a light-emission center of the light source with a light-receiving end surface of the optical system in directions within a slider back surface of the slider; bringing the light source unit into contact with the slider back surface, with a suction surface of the back holding jig tilted from the normal to the slider back surface; applying a load to a load application surface of the unit substrate by a loading means to bring a joining surface of the light source unit into conformity with the slider back surface; and bonding the light source unit and the slider. This method can improve the conformity, thereby achieving adequately strong junction and adequately high accuracy in position.
摘要翻译：提供一种制造包括具有光源的光源单元和具有光学系统的滑块的热辅助磁记录头的方法。该方法包括以下步骤：用后保持夹具吸附光源单元; 移动后保持夹具，然后将光源的发光中心与光学系统的光接收端面沿滑块的滑块后表面内的方向对准; 使光源单元与滑块后表面接触，后保持夹具的吸力表面从滑块后表面的法线倾斜; 通过加载装置将负载施加到单元基板的负载施加表面，以使光源单元的接合表面与滑块背面一致; 并且接合光源单元和滑块。该方法可以改善一致性，从而实现足够强的接合和足够高的位置精度。

68. 发明授权

US08029853B2 Fabrication process for magnetoresistive devices of the CPP type 有权
标题翻译： CPP型磁阻器件的制造工艺
公开(公告)号：US08029853B2
公开(公告)日：2011-10-04
申请号：US12292566
申请日：2008-11-20
申请人： Hironobu Matsuzawa , Tsutomu Chou , Yoshihiro Tsuchiya , Shinji Hara
发明人： Hironobu Matsuzawa , Tsutomu Chou , Yoshihiro Tsuchiya , Shinji Hara
IPC分类号： B05D5/12
CPC分类号： G11B5/3163 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3906 , H01F10/3254 , H01F41/307 , H01L43/12
摘要： The inventive fabrication process for magnetoresistive devices (CPP-GMR devices) involves the formation of a zinc oxide or ZnO layer that provides the intermediate layer of a spacer layer, comprising Zn film formation operation for forming a zinc or Zn layer and Zn film oxidization operation for oxidizing the zinc film after the Zn film formation operation. The Zn film formation operation is implemented such that after a multilayer substrate having a multilayer structure before the formation of the Zn film is cooled down to the temperature range of −140° C. to −60° C., the formation of the Zn film is set off, and the Zn film oxidization operation is implemented such that after the completion of the Zn film oxidization operation, oxidization treatment is set off at the substrate temperature range of −120° C. to −40° C. Thus, excelling in both flatness and crystallizability, the ZnO layer makes sure the device has high MR ratios, and can further have an area resistivity AR best suited for the device.
摘要翻译：用于磁阻器件（CPP-GMR器件）的本发明制造方法涉及形成提供间隔层的中间层的氧化锌或ZnO层，其包括用于形成锌或Zn层的Zn膜形成操作和Zn膜氧化操作用于在Zn膜形成操作之后氧化锌膜。实施Zn膜形成操作，使得在形成Zn膜之前具有多层结构的多层基板被冷却至-140℃至-60℃的温度范围，形成Zn膜并且进行Zn膜氧化操作，使得在Zn膜氧化操作完成之后，在-120℃至-40℃的衬底温度范围内，氧化处理被降低。因此，优异的平坦度和结晶性，ZnO层确保器件具有高MR比，并且还可以具有最适合于器件的面积电阻率AR。

69. 发明授权

US07920362B2 Magnetio-resistive device including a multi-layer spacer which includes a semiconductor oxide layer 有权
标题翻译：磁阻器件包括包括半导体氧化物层的多层间隔物
公开(公告)号：US07920362B2
公开(公告)日：2011-04-05
申请号：US11943171
申请日：2007-11-20
申请人： Shinji Hara , Kei Hirata , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
发明人： Shinji Hara , Kei Hirata , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
IPC分类号： G11B5/39
CPC分类号： G11B5/59683
摘要： A giant magneto-resistive effect device having a CPP structure including a spacer layer, and a fixed magnetization layer and a free layer stacked one upon another with said spacer layer interposed between them. The free layer functions such that its magnetization direction changes depending on an external magnetic field. The spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material. A semiconductor oxide layer is interposed between them. The semiconductor oxide layer forming a part of the spacer layer comprises zinc oxide as a main ingredient.
摘要翻译：具有包括间隔层的CPP结构的巨磁阻效应器件，以及彼此层叠的所述间隔层的固定磁化层和自由层。自由层的功能使得其磁化方向根据外部磁场而变化。间隔层包括由非磁性金属材料形成的第一非磁性金属层和第二非磁性金属层。在它们之间插入半导体氧化物层。形成间隔层的一部分的半导体氧化物层包含氧化锌作为主要成分。

70. 发明申请

US20110051295A1 Magnetoresistive effect element in CPP-type structure and magnetic disk device 有权
标题翻译： CPP型结构和磁盘装置中的磁阻效应元件
公开(公告)号：US20110051295A1
公开(公告)日：2011-03-03
申请号：US12461972
申请日：2009-08-31
申请人： Shinji Hara , Tsutomu Chou , Yoshihiro Tsuchiya , Hironobu Matsuzawa
发明人： Shinji Hara , Tsutomu Chou , Yoshihiro Tsuchiya , Hironobu Matsuzawa
IPC分类号： G11B5/33
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , H01L43/08 , H01L43/10
摘要： In an MR element of the present invention, an effect of an extremely-high MR ratio is obtained since a crystal structure of a CoFe magnetic layer in the vicinity of an interface with a spacer layer is formed as a close packed structure, such as an hcp structure and an fcc structure, and a total existing ratio of these crystal structures is 25% or more by an area ratio.
摘要翻译：在本发明的MR元件中，由于在与间隔层的界面附近的CoFe磁性层的晶体结构形成为紧密堆积结构，所以获得了极高的MR比的效果，例如 hcp结构和fcc结构，并且这些晶体结构的总存在比例通过面积比为25％以上。

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