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    • 63. 发明授权
    • Packet switching equipment and switching control method
    • 分组交换设备和切换控制方法
    • US07177309B2
    • 2007-02-13
    • US09945758
    • 2001-09-05
    • Masayuki Shinohara
    • Masayuki Shinohara
    • H04L12/28
    • H04Q11/0478H04L12/5601H04L49/1561H04L49/256H04L49/455
    • A packet switching equipment and a switch control system employing the same performs operation of the switch core portion independent of content of decision of an arbiter portion and overall equipment can be constructed with simple control structure. The packet switching equipment includes input buffer portions temporarily storing packets arriving to the input ports and outputting packets with adding labels indicative of destination port numbers, a switch core portion for switching the packets on the basis of labels added to the input buffer portions, and an arbiter portion adjusting input buffer portions to provide output permissions for outputting to the output ports. A sorting network autonomously sorting and concentrating the packets on the basis of the labels added to the packets is employed in the switch core portion.
    • 分组交换设备和采用该分组交换设备的交换机控制系统可以独立于仲裁器部分的决策内容和总体设备来执行交换机核心部分的操作,可以用简单的控制结构来构造。 分组交换设备包括临时存储到达输入端口的分组的输入缓冲器部分,并且输出具有指示目的地端口号的添加标签的分组,用于基于添加到输入缓冲器部分的标签来切换分组的交换机核心部分,以及 仲裁器部分调节输入缓冲器部分以提供输出到输出端口的输出许可。 在交换机核心部分中采用基于添加到分组的标签来自动排序和集中分组的分类网络。
    • 66. 发明授权
    • Method for manufacturing compound semiconductor epitaxial wafer
    • 化合物半导体外延片的制造方法
    • US06171394B2
    • 2001-01-09
    • US09081662
    • 1998-05-20
    • Masataka WatanabeTsuneyuki KaiseMasayuki Shinohara
    • Masataka WatanabeTsuneyuki KaiseMasayuki Shinohara
    • C30B2514
    • C30B25/02C30B29/40H01L21/02392H01L21/02395H01L21/02461H01L21/02463H01L21/0251H01L21/02543
    • A method for manufacturing compound semiconductor epitaxial wafer allowing sharp changes in alloy composition and growth of high-quality epitaxial layers. In a process for epitaxially growing a gallium arsenide phosphide GaAs1-xPx alloy composition gradient layer 4 on a compound semiconductor single-crystalline substrate made of gallium phosphide GaP or gallium arsenide GaAs, one group V gas as a source for the group V element not composing the single-crystalline substrate is varied in its supply volume in at least one cycle of sharp increase/moderate decrease, while the other group V gas as a source for the group V element composing the single-crystalline substrate is moderately decreased, thereby achieving at least one cycle of sharp increase/moderate decrease of a product of partial pressures of the group III and group V gases so that at least one set of an increasing zone and a decreasing zone of the alloy composition is formed within the gallium arsenide phosphide GaAs1-xPx alloy composition gradient layer 4.
    • 一种制造化合物半导体外延晶片的方法,其允许合金组成的急剧变化和高质量外延层的生长。 在由磷化镓GaP或砷化镓GaAs制成的化合物半导体单晶衬底上外延生长砷化镓磷化物GaAs1-xPx合金组成梯度层4的方法中,作为不组成V族元素的源的V族气体 单晶基板的供给体积在急剧增加/中等下降的至少一个周期内变化,而作为构成单晶基板的V族元素的源的另一组V气体适度地减小,从而达到 III族和V族气体的分压产物急剧增加/中度降低的至少一个循环,使得在砷化镓磷化物GaAs1-4中形成至少一组增加区和减少区的合金组成, xPx合金组成梯度层4。
    • 70. 发明申请
    • SURFACE LIGHT SOURCE DEVICE
    • 表面光源设备
    • US20140022814A1
    • 2014-01-23
    • US13821198
    • 2012-03-09
    • Gouo KurataMasayuki Shinohara
    • Gouo KurataMasayuki Shinohara
    • F21V8/00
    • G02B6/0036G02B6/0016G02B6/0028G02B6/0038G02B6/0046
    • A surface light source device has a light source, and a light guide plate introducing light of the light source from a light incidence surface and emitting the light from a light exit surface to outside. The light source being is provided at a position facing the light incidence surface of the light guide plate. The light guide plate includes a light introducing part for enclosing the light from the light source entering from the light incidence surface and a light guide plate main body having a thickness smaller than a maximum thickness of the light introducing part, provided so as to be continued to the light introducing part, and emitting the enclosed light from the light exit surface by light emitting portion to outside.
    • 面光源装置具有光源和导光板,该光导板从光入射面引入光源的光,并将光从光出射面发射到外部。 光源设置在与导光板的光入射面相对的位置。 导光板包括用于封闭来自光入射面的光源的光的导光部和具有比光导入部的最大厚度小的厚度的导光板主体,该导光板主体被设置为继续 并且通过发光部将来自光出射面的封闭光发射到外部。