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    • 69. 发明授权
    • Charge pump circuit and semiconductor device including the same
    • 电荷泵电路和包括其的半导体器件
    • US09385592B2
    • 2016-07-05
    • US14457525
    • 2014-08-12
    • SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    • Kazunori WatanabeTomoaki Atsumi
    • G05F1/10H02M3/07
    • H02M3/07H02M3/073
    • Efficiency of a charge pump circuit is increased. The charge pump circuit includes serially connected fundamental circuits each including a diode-connected transistor and a capacitor. At least one transistor is provided with a back gate, and the back gate is connected to any node in the charge pump circuit. For example, the charge pump circuit is of a step-up type; in which case, if the transistor is an n-channel transistor, a back gate of the transistor in the last stage is connected to an output node of the charge pump circuit. Back gates of the transistors in the other stages are connected to an input node of the charge pump circuit. In this way, the voltage holding capability of the fundamental circuit in the last stage is increased, and the conversion efficiency can be increased because an increase in the threshold of the transistors in the other stages is prevented.
    • 电荷泵电路的效率提高。 电荷泵电路包括串联连接的基本电路,每个基本电路包括二极管连接的晶体管和电容器。 至少一个晶体管设置有背栅极,并且后栅极连接到电荷泵电路中的任何节点。 例如,电荷泵电路是升压型的; 在这种情况下,如果晶体管是n沟道晶体管,则最后级的晶体管的背栅极连接到电荷泵电路的输出节点。 其他级中的晶体管的背栅极连接到电荷泵电路的输入节点。 以这种方式,最后阶段的基本电路的电压保持能力增加,并且由于其它级的晶体管的阈值的增加被阻止,可以提高转换效率。