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61. 发明授权

US09154276B2 Wireless communication system, mobile station apparatus, and base station apparatus using demodulation reference signal 有权
标题翻译：无线通信系统，移动站装置和使用解调参考信号的基站装置
公开(公告)号：US09154276B2
公开(公告)日：2015-10-06
申请号：US14111484
申请日：2012-04-04
申请人： Yosuke Akimoto , Shoichi Suzuki
发明人： Yosuke Akimoto , Shoichi Suzuki
IPC分类号： H04W4/00 , H04L5/00 , H04L27/26 , H04J13/00 , H04L25/03 , H04B7/04
CPC分类号： H04L5/0017 , H04B7/0413 , H04J13/004 , H04J13/0062 , H04L5/0023 , H04L5/0026 , H04L5/0051 , H04L5/0053 , H04L27/2613 , H04L27/2636 , H04L2025/03414
摘要： Regarding an uplink demodulation reference signal to which a cyclic shift and an orthogonal cover code is applied, IFDM is applied to the uplink demodulation reference signal while retaining the number of bits of control information that specifies a cyclic shift and an orthogonal cover code transmitted from a base station apparatus to a mobile station apparatus. A subcarrier offset and a subcarrier interval based on IFDM are uniquely determined in accordance with the cyclic shift and the orthogonal cover code of the uplink demodulation reference signal, reported from the base station apparatus to the mobile station apparatus.
摘要翻译：关于应用循环移位和正交覆盖码的上行链路解调参考信号，将IFDM应用于上行解调参考信号，同时保留指定循环移位的控制信息的比特数和从基站装置。根据从基站装置向移动站装置报告的上行链路解调参考信号的循环移位和正交覆盖码，唯一地确定基于IFDM的子载波偏移和子载波间隔。

62. 发明授权

US08933480B2 Semiconductor light emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08933480B2
公开(公告)日：2015-01-13
申请号：US12793945
申请日：2010-06-04
申请人： Yosuke Akimoto , Akihiro Kojima , Miyuki Iduka , Yoshiaki Sugizaki
发明人： Yosuke Akimoto , Akihiro Kojima , Miyuki Iduka , Yoshiaki Sugizaki
IPC分类号： H01L33/00 , H01L33/48 , H01L33/38 , H01L33/54 , H01L33/62
CPC分类号： H01L33/486 , H01L33/0079 , H01L33/385 , H01L33/54 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor stack, a first electrode, a second electrode, a first interconnect, an insulating film, and a second interconnect. The semiconductor stack includes a first major surface, a second major surface provided on a side opposite to the first major surface, a side face, and a light emitting layer. The first electrode is provided on the first major surface. The second electrode is provided at least on a peripheral portion of the second major surface. The first interconnect is provided on the first electrode. The insulating film is provided on the side face of the semiconductor stack. The second interconnect is provided on the side face of the semiconductor stack via the insulating film. The second interconnect is connected to the second electrode in outside of the peripheral portion of the second major surface of the semiconductor stack.
摘要翻译：根据一个实施例，半导体发光器件包括半导体堆叠，第一电极，第二电极，第一互连，绝缘膜和第二互连。半导体堆叠包括第一主表面，设置在与第一主表面相对的一侧的第二主表面，侧面和发光层。第一电极设置在第一主表面上。第二电极至少设置在第二主表面的周边部分上。第一互连设置在第一电极上。绝缘膜设置在半导体叠层的侧面上。第二互连经由绝缘膜设置在半导体堆叠的侧面上。第二互连在半导体堆叠的第二主表面的外围部分的外部连接到第二电极。

63. 发明授权

US08872210B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08872210B2
公开(公告)日：2014-10-28
申请号：US13598393
申请日：2012-08-29
申请人： Hideto Furuyama , Yosuke Akimoto , Miyoko Shimada , Akihiro Kojima , Yoshiaki Sugizaki
发明人： Hideto Furuyama , Yosuke Akimoto , Miyoko Shimada , Akihiro Kojima , Yoshiaki Sugizaki
IPC分类号： H01L33/40
CPC分类号： H01L33/504 , H01L24/97 , H01L33/46 , H01L33/501 , H01L33/52 , H01L33/60 , H01L33/62 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2933/0091 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a light emitting element, a phosphor layer, and a fluorescent reflection film. The phosphor layer has a transparent medium, a phosphor dispersed in the transparent medium, and a particle dispersed in the transparent medium. The phosphor is excited by the excitation light so as to emit a fluorescence. The particle is a magnitude of not more than 1/10 a wavelength of the excitation light. The particle has a different refractive index from a refractive index of the transparent medium. The fluorescent reflection film is provided between the light emitting element and the phosphor layer. The fluorescent reflection film has a higher reflectance with respect to a fluorescent wavelength of the phosphor, than a reflectance with respect to the wavelength of the excitation light.
摘要翻译：根据一个实施例，半导体发光器件包括发光元件，荧光体层和荧光反射膜。荧光体层具有透明介质，分散在透明介质中的荧光体和分散在透明介质中的粒子。荧光体被激发光激发，从而发出荧光。粒子的大小不大于激发光的波长的1/10。该颗粒具有与透明介质的折射率不同的折射率。荧光反射膜设置在发光元件和荧光体层之间。荧光反射膜相对于荧光体的荧光波长具有比相对于激发光的波长的反射率更高的反射率。

64. 发明申请

US20140169322A1 TERMINAL, COMMUNICATION SYSTEM, AND COMMUNICATION METHOD 有权
标题翻译：终端，通信系统和通信方法
公开(公告)号：US20140169322A1
公开(公告)日：2014-06-19
申请号：US14236560
申请日：2012-08-02
申请人： Wataru Ouchi , Kimihiko Imamura , Yosuke Akimoto , Toshizo Nogami , Daiichiro Nakashima , Kazuyuki Shimezawa , Shoichi Suzuki , Yasuyuki Kato , Katsunari Uemura
发明人： Wataru Ouchi , Kimihiko Imamura , Yosuke Akimoto , Toshizo Nogami , Daiichiro Nakashima , Kazuyuki Shimezawa , Shoichi Suzuki , Yasuyuki Kato , Katsunari Uemura
IPC分类号： H04W52/24 , H04L5/00
CPC分类号： H04W52/242 , H04B7/024 , H04L5/0048 , H04L5/0073 , H04W24/10 , H04W52/146 , H04W72/042
摘要： There are provided a base station, a terminal, a communication system, and a communication method in a communication system in which a base station 101 and a terminal 102 communicate with each other, in which the base station 101 can efficiently notify the terminal 102 of control information. The terminal includes a receiving unit 605 configured to receive a radio resource control signal including information concerning a path loss reference resource and information concerning an uplink power control related parameter configuration, and a transmit power control unit 6015 configured to set a path loss and an uplink transmit power on the basis of the information concerning the path loss reference resource and the information concerning the uplink power control related parameter configuration.
摘要翻译：在基站101和终端102彼此通信的通信系统中提供了基站，终端，通信系统和通信方法，其中基站101可以有效地通知终端102 控制信息。终端包括：接收单元605，被配置为接收包括关于路径损耗参考资源的信息的无线电资源控制信号和与上行链路功率控制相关的参数配置有关的信息;以及发送功率控制单元6015，被配置为设置路径损耗和上行链路基于与路径损耗参考资源有关的信息以及与上行链路功率控制相关的参数配置有关的信息来发送功率。

65. 发明授权

US08729592B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08729592B2
公开(公告)日：2014-05-20
申请号：US12886092
申请日：2010-09-20
申请人： Miyuki Iduka , Yosuke Akimoto , Akihiro Kojima , Yoshiaki Sugizaki
发明人： Miyuki Iduka , Yosuke Akimoto , Akihiro Kojima , Yoshiaki Sugizaki
IPC分类号： H01L33/00
CPC分类号： H01L33/385 , H01L33/14
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a second insulating layer. The first electrode is provided on the second major surface of the semiconductor layer. The second electrode is provided on a side face of a portion of the semiconductor layer between the light emitting layer and the first major surface. The second interconnect layer is provided in the second opening and on the first insulating layer on the side opposite to the second major surface to connect to the second electrode provided on the side face. The second interconnect layer is provided on the side face of the portion of the semiconductor layer with interposing the second electrode.
摘要翻译：根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，第一绝缘层，第一互连层，第二互连层，第一金属柱，第二金属柱和第二绝缘层。第一电极设置在半导体层的第二主表面上。第二电极设置在发光层和第一主表面之间的半导体层的一部分的侧面上。第二互连层设置在与第二主表面相对的一侧的第二开口中和第一绝缘层上，以连接到设置在侧面上的第二电极。第二互连层设置在半导体层的该部分的侧面上并插入第二电极。

66. 发明申请

US20130265962A1 MOBILE STATION APPARATUS, BASE STATION APPARATUS, METHOD AND INTEGRATED CIRCUIT 有权
标题翻译：移动站设备，基站设备，方法和集成电路
公开(公告)号：US20130265962A1
公开(公告)日：2013-10-10
申请号：US13883382
申请日：2011-11-04
申请人： Wataru Ouchi , Yosuke Akimoto , Toshizo Nogami
发明人： Wataru Ouchi , Yosuke Akimoto , Toshizo Nogami
IPC分类号： H04W72/04
CPC分类号： H04W72/0406 , H04J13/0059 , H04J13/0074 , H04L5/0048 , H04L25/0226 , H04W28/18 , H04W48/08 , H04W72/00 , H04W72/02 , H04W72/042 , H04W72/12
摘要： To provide a mobile station apparatus, a base station apparatus, a method and an integrated circuit which are capable of dissolving complexity of setting by the base station apparatus and performing efficient scheduling by improving the orthogonality of resources of a reference signal for every antenna. A mobile station apparatus which transmits a sounding reference signal to a base station apparatus using a plurality of antenna ports, wherein based on one value set specifically to a mobile station apparatus by a parameter notified of by a higher layer from the base station apparatus, a cyclic shift applied to a sounding reference signal corresponding to the plurality of antenna ports is determined.
摘要翻译：提供能够解决基站装置的设置复杂度的移动站装置，基站装置，方法和集成电路，并且通过提高每个天线的基准信号的资源的正交性进行有效的调度。一种使用多个天线端口向基站装置发送探测参考信号的移动站装置，其特征在于，基于通过来自所述基站装置的上层通知的参数专门针对移动站装置设定的一个值，确定应用于与多个天线端口对应的探测参考信号的循环移位。

67. 发明申请

US20130248904A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20130248904A1
公开(公告)日：2013-09-26
申请号：US13601487
申请日：2012-08-31
申请人： Yoshiaki SUGIZAKI , Akihiro Kojima , Hideto Furuyama , Yosuke Akimoto
发明人： Yoshiaki SUGIZAKI , Akihiro Kojima , Hideto Furuyama , Yosuke Akimoto
IPC分类号： H01L33/50
CPC分类号： H01L33/647 , H01L25/0753 , H01L33/0095 , H01L33/20 , H01L33/385 , H01L33/502 , H01L33/505 , H01L2933/0016
摘要： According to one embodiment, a semiconductor light emitting device includes: a semiconductor layer including a first face, a second face, a side face, and a light emitting layer; a p-side electrode provided on the second face; an n-side electrode provided on the side face; a first p-side metal layer provided on the p-side electrode; a first n-side metal layer provided on the periphery of the n-side electrode; a first insulating layer provided on a face on the second face side in the first n-side metal layer; a second p-side metal layer connected with the first p-side metal layer on the first p-side metal layer, and provided, extending from on the first p-side metal layer to on the first insulating layer; and a second n-side metal layer provided on a face on the second face side in the first n-side metal layer in a peripheral region of the semiconductor layer.
摘要翻译：根据一个实施例，半导体发光器件包括：包括第一面，第二面，侧面和发光层的半导体层; 设置在所述第二面上的p侧电极; 设置在所述侧面上的n侧电极; 设置在p侧电极上的第一p侧金属层; 设置在n侧电极的周围的第一n侧金属层; 设置在第一n侧金属层的第二面侧的面上的第一绝缘层; 第二p侧金属层，与第一p侧金属层上的第一p侧金属层连接，并且从第一p侧金属层延伸到第一绝缘层; 以及设置在半导体层的周边区域中的第一n侧金属层的第二面侧的面上的第二n侧金属层。

68. 发明授权

US08498259B2 Radio communication system, base station apparatus, mobile station apparatus, and radio communication method 有权
标题翻译：无线通信系统，基站装置，移动台装置以及无线通信方法
公开(公告)号：US08498259B2
公开(公告)日：2013-07-30
申请号：US13146370
申请日：2010-01-21
申请人： Shoichi Suzuki , Yosuke Akimoto
发明人： Shoichi Suzuki , Yosuke Akimoto
IPC分类号： H04W4/00
CPC分类号： H04W72/0413 , H04L1/1692 , H04L1/1854 , H04L1/1861 , H04L5/0048 , H04L5/0053 , H04L5/026
摘要： Mobile station apparatuses are provided that receive downlink allocation information from a base station apparatus in a downlink control channel. Each mobile station apparatus performs demodulation, decoding, and cyclic redundancy check on the downlink shared channel in accordance with the downlink allocation information received. Each mobile station apparatus generates an acknowledgement or a non-acknowledgement in accordance with the result of the cyclic redundancy check. Each mobile station apparatus then selects the lowest number and the second lowest number of the numbers of the control channel elements in which the downlink allocation information is received. Based on the selected numbers, each mobile station apparatus 2 obtains a physical resource block (PRB), as well as a cyclic shift and an orthogonal code sequence in the time domain for each transmission antenna, and spreads the acknowledgement or the non-acknowledgement and the uplink pilot channel.
摘要翻译：提供了在下行链路控制信道中从基站装置接收下行分配信息的移动站装置。各移动站装置根据接收到的下行分配信息，对下行共享信道进行解调，解码，循环冗余校验。每个移动站装置根据循环冗余校验的结果生成确认或非确认。然后，各移动站装置选择其中接收下行链路分配信息的控制信道要素的数量的最低数量和次数最少。基于所选择的数字，每个移动站装置2在每个发送天线的时域中获得物理资源块（PRB）以及循环移位和正交码序列，并且扩展确认或非确认，上行导频信道。

69. 发明申请

US20110298001A1 METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE AND LIGHT-EMITTING DEVICE MANUFACTURED BY THE SAME 审中-公开
标题翻译：用于制造发光装置的方法和由其制造的发光装置
公开(公告)号：US20110298001A1
公开(公告)日：2011-12-08
申请号：US13173073
申请日：2011-06-30
申请人： Yosuke Akimoto , Ryuichi Togawa , Akihiro Kojima , Miyuki Iduka , Yoshiaki Sugizaki
发明人： Yosuke Akimoto , Ryuichi Togawa , Akihiro Kojima , Miyuki Iduka , Yoshiaki Sugizaki
IPC分类号： H01L33/36
CPC分类号： H01L33/0079 , H01L33/44
摘要： In one embodiment, a method for manufacturing a light-emitting device is disclosed. The method can include removing a substrate from a semiconductor layer. The semiconductor layer is provided on a first main surface of the substrate. The semiconductor layer includes a light-emitting layer. At least a top surface and side surfaces of the semiconductor layer are covered with a first insulating film. A first electrode portion and a second electrode portion electrically continuous to the semiconductor layer are provided. The first insulating film is covered with a second insulating film. The removing is performed by irradiating the semiconductor layer with laser light from a side of a second main surface of the substrate. The second main surface is opposite to the first main surface. The first insulating film is made of silicon nitride. The second insulating film is made of polyimide.
摘要翻译：在一个实施例中，公开了一种用于制造发光器件的方法。该方法可以包括从半导体层去除衬底。半导体层设置在基板的第一主表面上。半导体层包括发光层。至少半导体层的顶表面和侧表面被第一绝缘膜覆盖。提供与半导体层电连接的第一电极部分和第二电极部分。第一绝缘膜被第二绝缘膜覆盖。通过从基板的第二主表面侧的激光照射半导体层来进行去除。第二主表面与第一主表面相对。第一绝缘膜由氮化硅制成。第二绝缘膜由聚酰亚胺制成。

70. 发明申请

US20110204396A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20110204396A1
公开(公告)日：2011-08-25
申请号：US12793945
申请日：2010-06-04
申请人： Yosuke Akimoto , Akihiro Kojima , Miyuki Iduka , Yoshiaki Sugizaki
发明人： Yosuke Akimoto , Akihiro Kojima , Miyuki Iduka , Yoshiaki Sugizaki
IPC分类号： H01L33/36 , H01L33/00 , H01L21/78 , H01L33/62
CPC分类号： H01L33/486 , H01L33/0079 , H01L33/385 , H01L33/54 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor stack, a first electrode, a second electrode, a first interconnect, an insulating film, and a second interconnect. The semiconductor stack includes a first major surface, a second major surface provided on a side opposite to the first major surface, a side face, and a light emitting layer. The first electrode is provided on the first major surface. The second electrode is provided at least on a peripheral portion of the second major surface. The first interconnect is provided on the first electrode. The insulating film is provided on the side face of the semiconductor stack. The second interconnect is provided on the side face of the semiconductor stack via the insulating film. The second interconnect is connected to the second electrode in outside of the peripheral portion of the second major surface of the semiconductor stack.
摘要翻译：根据一个实施例，半导体发光器件包括半导体堆叠，第一电极，第二电极，第一互连，绝缘膜和第二互连。半导体堆叠包括第一主表面，设置在与第一主表面相对的一侧的第二主表面，侧面和发光层。第一电极设置在第一主表面上。第二电极至少设置在第二主表面的周边部分上。第一互连设置在第一电极上。绝缘膜设置在半导体叠层的侧面上。第二互连经由绝缘膜设置在半导体堆叠的侧面上。第二互连在半导体堆叠的第二主表面的外围部分的外部连接到第二电极。

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