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    • 66. 发明申请
    • SEMICONDUCTOR DEVICE
    • 半导体器件
    • US20110059586A1
    • 2011-03-10
    • US12944632
    • 2010-11-11
    • Miwako AKIYAMAYusuke KawaguchiYoshihiro Yamaguchi
    • Miwako AKIYAMAYusuke KawaguchiYoshihiro Yamaguchi
    • H01L21/336
    • H01L29/7813H01L21/26586H01L29/0634H01L29/0869H01L29/0878H01L29/1095H01L29/41741H01L29/41766H01L29/66727H01L29/66734
    • A semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of the first conductivity type provided on a main surface of the first semiconductor layer and having a lower impurity concentration than that of the first semiconductor layer; a third semiconductor layer of a second conductivity type provided on the second semiconductor layer; a fourth semiconductor layer of the first conductivity type selectively provided on the third semiconductor layer; a gate electrode provided in a trench passing through the third semiconductor layer and reaching the second semiconductor layer; a first main electrode contacting the fourth semiconductor layer and contacting the third semiconductor layer through a contact groove provided to pass through the fourth semiconductor layer between the contiguous gate electrodes; a second main electrode provided on an opposite surface to the main surface of the first semiconductor layer; and a fifth semiconductor layer of the second conductivity type provided in an interior portion of the second semiconductor layer corresponding to a part under the contact groove. An uppermost portion of the fifth semiconductor layer contacts the third semiconductor layer, a lowermost portion of the fifth semiconductor layer has a higher impurity concentration than that of the other portion in the fifth semiconductor layer and is located in the second semiconductor layer and not contacting the first semiconductor layer, and the fifth semiconductor layer is narrower from the uppermost portion to the lower most portion.
    • 半导体器件包括:第一导电类型的第一半导体层; 第一导电类型的第二半导体层设置在第一半导体层的主表面上并且具有比第一半导体层的杂质浓度低的第二半导体层; 设置在第二半导体层上的第二导电类型的第三半导体层; 选择性地设置在第三半导体层上的第一导电类型的第四半导体层; 设置在穿过所述第三半导体层并到达所述第二半导体层的沟槽中的栅电极; 与所述第四半导体层接触的第一主电极,并且通过设置成在所述连续的栅电极之间穿过所述第四半导体层的接触槽使所述第三半导体层接触; 设置在与所述第一半导体层的主表面相反的表面上的第二主电极; 以及第二导电类型的第五半导体层,设置在与所述接触槽下方的部分对应的所述第二半导体层的内部。 第五半导体层的最上部与第三半导体层接触,第五半导体层的最下部分的杂质浓度比第五半导体层中的其他部分杂质浓度高,位于第二半导体层中, 第一半导体层,第五半导体层从最上部到最下部较窄。