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61. 发明授权

US5933751A Method for the heat treatment of II-VI semiconductors 失效
标题翻译： II-VI半导体热处理方法
公开(公告)号：US5933751A
公开(公告)日：1999-08-03
申请号：US12545
申请日：1998-01-23
申请人： Ryu Hirota
发明人： Ryu Hirota
IPC分类号： C30B29/48 , C30B31/02 , H01L21/22 , H01L21/385 , H01S5/00 , H01L21/00
CPC分类号： H01L21/385 , Y10S438/909 , Y10S438/971
摘要： An object of the invention is to provide a method for the heat treatment of II-VI semiconductors such as ZnS, ZnS.sub.x Se.sub.1-x, Zn.sub.y Cd.sub.1-y Se, etc. to dope with Group III elements as a donor impurity to reduce its resistivity. This object can be attained by a method for the heat treatment of II-VI semiconductors in a closed vessel, which comprises forming a film of a Group III element as a donor impurity or a Group III element-containing compound on a surface of single crystal of II-VI semiconductors, then charging the single crystal and a Group II element for constituting the single crystal in the closed vessel and heating them in such a manner that the both are not contacted with each other.
摘要翻译：本发明的目的是提供一种用于热处理诸如ZnS，ZnSxSe1-x，ZnyCd1-ySe等的II-VI半导体的方法，以掺杂作为施主杂质的III族元素以降低其电阻率。该目的可以通过在密闭容器中热处理II-VI半导体的方法来实现，该方法包括在单晶表面上形成作为施主杂质的III族元素的膜或含有III族元素的化合物的II-VI半导体，然后将单晶和用于构成单晶的第II族元素装入密闭容器中，并以不使它们彼此接触的方式加热它们。

62. 发明申请

US20090032907A1 Method for Producing GaxIn1-xN(0) Crystal Gaxin1-xn(0 审中-公开
标题翻译：生产GaxIn1-xN（0x）晶体Gaxin1-xn（0
公开(公告)号：US20090032907A1
公开(公告)日：2009-02-05
申请号：US11919705
申请日：2006-08-17
申请人： Tomoki Uemura , Shinsuke Fujiwara , Takuji Okahisa , Ryu Hirota , Hideaki Nakahata
发明人： Tomoki Uemura , Shinsuke Fujiwara , Takuji Okahisa , Ryu Hirota , Hideaki Nakahata
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： C30B25/02 , C30B25/10 , C30B29/403 , C30B29/406
摘要： It seems that a conventional method for producing a GaN crystal by using HVPE has a possibility that the crystallinity of a GaN crystal can be improved by producing a GaN crystal at a temperature higher than 1100° C. However, such a conventional method has a problem in that a quartz reaction tube (1) is melted when heated by heaters (5) and (6) to a temperature higher than 1100° C.Disclosed herein is a method for producing a GaxIn1-xN (0≦x≦1) crystal (12) by growing GaxIn1-xN (0≦x≦1) crystal (12) on the surface of a base substrate (7) by the reaction of a material gas, containing ammonia gas and at least one of a gallium halide gas and an indium halide gas, in a quartz reaction tube (1), wherein during the growth of GaxIn1-xN (0≦x≦1) crystal (12), quartz reaction tube (1) is externally heated and base substrate (7) is individually heated.
摘要翻译：看来，通过使用HVPE制造GaN晶体的常规方法可能通过在高于1100℃的温度下生成GaN晶体来提高GaN晶体的结晶度。然而，这种常规方法具有问题因为当加热器（5）和（6）加热时，石英反应管（1）熔化到高于1100℃的温度。本文公开了一种制备GaxIn1-xN（0≤x≤1））晶体（12）通过使含有氨气体的材料气体与至少一种以上的气体的反应在基底基板（7）的表面上生长GaxIn1-xN（0 <= x <= 1）晶体（12）在石英反应管（1）中，在GaxIn1-xN（0 <= x <= 1）晶体（12）生长期间，石英反应管（1）被外部加热，基底基板（7）被单独加热。

63. 发明授权

US07288151B2 Method of manufacturing group-III nitride crystal 有权
标题翻译： III族氮化物晶体的制造方法
公开(公告)号：US07288151B2
公开(公告)日：2007-10-30
申请号：US10999338
申请日：2004-11-29
申请人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Ryu Hirota
发明人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Ryu Hirota
IPC分类号： C30B11/14
CPC分类号： C30B29/403 , C30B11/00 , C30B11/04 , C30B29/406
摘要： There is provided a method of manufacturing a group-III nitride crystal in which a nitrogen plasma is brought into contact with a melt containing a group-III element and an alkali metal to grow the group-III nitride crystal. Furthermore, there is also provided a method of manufacturing a group-III nitride crystal in which the group-III nitride crystal is grown on a substrate placed in a melt containing a group-III element and an alkali metal, with a minimal distance between a surface of the melt and a surface of the substrate set to be at most 50 mm.
摘要翻译：提供了一种制造III族氮化物晶体的方法，其中使氮等离子体与含有III族元素和碱金属的熔体接触以生长III族氮化物晶体。此外，还提供了一种III族氮化物晶体的制造方法，其中III族氮化物晶体在放置在含有III族元素和碱金属的熔体中的基板上生长，其中熔体的表面和基板的表面设定为至多50mm。

64. 发明授权

US5944891A Method for the heat treatment of ZnSe crystal 失效
标题翻译： ZnSe晶体热处理方法
公开(公告)号：US5944891A
公开(公告)日：1999-08-31
申请号：US907650
申请日：1997-08-11
申请人： Ryu Hirota , Shinsuke Fujiwara
发明人： Ryu Hirota , Shinsuke Fujiwara
IPC分类号： C30B29/48 , C30B25/00 , C30B31/18 , C30B33/00 , C30B33/02 , C30B1/00
CPC分类号： C30B25/00 , C30B29/48 , C30B33/00 , C30B33/02 , Y10T117/1016
摘要： An object of the present invention is to provide a method for the heat treatment of a ZnSe crystal whereby the crystal can be prevented from crystallinity deterioration and caused to have low resistivity without occurrence of precipitates in the crystal.The feature of the present invention consists in a method for the heat treatment of ZnSe comprising subjecting ZnSe crystal grown by a chemical vapor transport method using iodine as a transport agent to a heat treatment in a Zn vapor atmosphere and controlling a cooling rate after the heat treatment in 10 to 200.degree. C./min.
摘要翻译：本发明的目的是提供一种用于热处理ZnSe晶体的方法，由此可以防止晶体的结晶劣化，并且在晶体中不会发生析出物而具有低电阻率。本发明的特征在于一种ZnSe的热处理方法，其特征在于，使用碘作为输送剂的化学气相输送法生长的ZnSe晶体在Zn蒸气气氛中进行热处理，并控制加热后的冷却速度治疗10〜200℃/ min。

65. 发明授权

US6132506A Method for the heat treatment of ZnSe crystal 失效
标题翻译： ZnSe晶体热处理方法
公开(公告)号：US6132506A
公开(公告)日：2000-10-17
申请号：US335763
申请日：1999-06-18
申请人： Ryu Hirota , Shinsuke Fujiwara
发明人： Ryu Hirota , Shinsuke Fujiwara
IPC分类号： C30B29/48 , C30B25/00 , C30B31/18 , C30B33/00 , C30B33/02
CPC分类号： C30B25/00 , C30B29/48 , C30B33/00 , C30B33/02 , Y10T117/1016
摘要： An object of the present invention is to provide a method for the heat treatment of ZnSe crystal whereby the crystal can be prevented from deterioration of crystallinity and caused to have low resistivity without occurrence of precipitates in the crystal. The feature of the present invention consists in a method for the heat treatment of ZnSe comprising subjecting ZnSe crystal grown by a chemical vapor transport method using iodine as a transport agent to a heat treatment in a Zn vapor atmosphere and controlling a cooling rate after the heat treatment in 10 to 200.degree. C./min.
摘要翻译：本发明的目的是提供一种用于热处理ZnSe晶体的方法，由此可以防止晶体的结晶劣化，并且在晶体中不发生析出物而具有低电阻率。本发明的特征在于一种ZnSe的热处理方法，其特征在于，使用碘作为输送剂的化学气相输送法生长的ZnSe晶体在Zn蒸气气氛中进行热处理，并控制加热后的冷却速度治疗10〜200℃/ min。

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