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61. 发明授权

US07847319B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07847319B2
公开(公告)日：2010-12-07
申请号：US11984723
申请日：2007-11-21
申请人： Yutaka Hirose , Yoshito Ikeda , Kaoru Inoue
发明人： Yutaka Hirose , Yoshito Ikeda , Kaoru Inoue
IPC分类号： H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L21/28581 , H01L29/2003 , H01L29/42316 , H01L29/475 , H01L29/66462
摘要： A semiconductor device has a Group III nitride semiconductor layer and a gate electrode formed on the Group III nitride semiconductor layer. The gate electrode contains an adhesion enhancing element. A thermally oxidized insulating film is interposed between the Group III nitride semiconductor layer and the gate electrode.
摘要翻译：半导体器件具有形成在III族氮化物半导体层上的III族氮化物半导体层和栅电极。栅极电极含有粘附增强元件。在III族氮化物半导体层和栅电极之间插入热氧化绝缘膜。

62. 发明授权

US07551194B2 Optical writing device, image forming device, and optical writing method 失效
标题翻译：光写入装置，图像形成装置和光写入方法
公开(公告)号：US07551194B2
公开(公告)日：2009-06-23
申请号：US11466672
申请日：2006-08-23
申请人： Yoshito Ikeda
发明人： Yoshito Ikeda
IPC分类号： B41J2/435
CPC分类号： H04N1/0473 , H04N1/1135 , H04N2201/0471 , H04N2201/04729 , H04N2201/04732 , H04N2201/04744 , H04N2201/04768 , H04N2201/04789
摘要： An optical writing device includes a scanning unit that scans an optical beam in a main scanning direction while shifting a scanning position in a sub-scanning direction by a predetermined pitch, a clock frequency changing unit that changes a frequency of a write clock at a position in the main scanning direction, an image data processing unit that processes image data according to change in the frequency of the write clock, and a correcting unit that adds, when a pixel is removed from the image data, removed pixel to pixels corresponding to the next write clock.
摘要翻译：一种光写入装置，包括扫描单元，其沿主扫描方向扫描光束，同时沿副扫描方向移动预定间距的扫描位置，时钟频率改变单元，其将写时钟的频率改变在位置在主扫描方向上，根据写入时钟频率的变化来处理图像数据的图像数据处理单元;以及校正单元，当将像素从图像数据中去除时，将除去像素加到与下一个写时钟。

63. 发明授权

US07518625B2 Image forming apparatus and associated methodology of forming an enlarged image 有权
标题翻译：形成图像的图像形成装置和相关联的方法
公开(公告)号：US07518625B2
公开(公告)日：2009-04-14
申请号：US11466676
申请日：2006-08-23
申请人： Yoshito Ikeda
发明人： Yoshito Ikeda
IPC分类号： B41J2/435 , B41J2/47 , H04N1/393
CPC分类号： H04N1/506 , G03G15/011 , G03G15/5095 , G03G2215/0158 , G03G2215/0429 , G03G2215/047
摘要： An exposing unit optically writes respective color-separated image data on a photosensitive drum to form a latent image by using both a forward direction scanning and a backward direction scanning. A writing control unit outputs input pixel data to the exposing unit a plurality of times for enlarging and printing an input image. The writing control unit includes an output unit that outputs a main-scanning effective gate signal of dot period lengths of common multiples of all available enlargement ratios; and a suppressing unit that suppresses an output of a pixel signal to an outside of a printing range.
摘要翻译：曝光单元通过使用正向扫描和向后扫描两者来将相应的分色图像数据光学地写入感光鼓上以形成潜像。写入控制单元将输入像素数据多次输出到曝光单元，以放大和打印输入图像。写入控制单元包括输出单元，其输出所有可用放大率的公共倍数的点周期长度的主扫描有效栅极信号; 以及抑制单元，其将像素信号的输出抑制到打印范围的外部。

64. 发明授权

US07449399B2 Method for fabricating a semiconductor device for reducing a surface potential 有权
标题翻译：制造用于降低表面电位的半导体器件的方法
公开(公告)号：US07449399B2
公开(公告)日：2008-11-11
申请号：US11527695
申请日：2006-09-27
申请人： Kaoru Inoue , Yoshito Ikeda , Yutaka Hirose , Katsunori Nishii
发明人： Kaoru Inoue , Yoshito Ikeda , Yutaka Hirose , Katsunori Nishii
IPC分类号： H01L21/26
CPC分类号： H01L29/66878 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L29/66462 , H01L29/8126
摘要： A semiconductor device has an active region composed of a group III-V nitride semiconductor and ohmic electrodes and a gate electrode each formed on the active region. The active region has an entire surface thereof exposed to a plasma such that a surface potential for electrons therein is lower than in the case where the entire surface is not exposed to the plasma.
摘要翻译：半导体器件具有由III-V族氮化物半导体和欧姆电极构成的有源区域和分别形成在有源区域上的栅电极。有源区域的整个表面暴露于等离子体，使得其中的电子的表面电位低于整个表面不暴露于等离子体的情况。

65. 发明授权

US07446159B1 Curable resin composition 有权
标题翻译：可固化树脂组合物
公开(公告)号：US07446159B1
公开(公告)日：2008-11-04
申请号：US11902286
申请日：2007-09-20
申请人： Hiroshi Samukawa , Kouki Hatsuda , Yoshito Ikeda , Hisashi Ando , Norikazu Yamamoto
发明人： Hiroshi Samukawa , Kouki Hatsuda , Yoshito Ikeda , Hisashi Ando , Norikazu Yamamoto
IPC分类号： C08F222/14 , C08F2/46
CPC分类号： C08F222/1006 , C08F220/30
摘要： A resin composition having a viscosity suitable for encapsulating optical devices such as light-emitting devices is provided. Specifically, the cured product of the resin composition has a refractive index greater than or equal to that of epoxy resins, exhibits excellent heat resistance and light resistance, and has thermal stress relaxation properties. The curable resin composition contains a fluorene group-containing acrylate or methacrylate represented by the following formula and a specific monofunctional acrylate or methacrylate: wherein X is —(CH2CH2O)n— or —(CH2CH2O)—CH2CH(OH)CH2O— with n being 1 to 5 and R is an acrylic or methacrylic group.
摘要翻译：提供了一种具有适合于封装诸如发光装置的光学装置的粘度的树脂组合物。具体而言，树脂组合物的固化物的折射率大于或等于环氧树脂的折射率，耐热性和耐光性优异，具有热应力松弛性。可固化树脂组合物含有由下式表示的含芴基的丙烯酸酯或甲基丙烯酸酯和特定的单官能丙烯酸酯或甲基丙烯酸酯：其中X是 - （CH 2 CH 2 CH 2 O ） - 或 - （CH 2 CH 2 CH 2）-CH 2 CH（OH）CH

66. 发明申请

US20070292723A1 BATTERY PACKS 有权
标题翻译：电池包
公开(公告)号：US20070292723A1
公开(公告)日：2007-12-20
申请号：US11776933
申请日：2007-07-12
申请人： Yoshito Ikeda , Hironobu Moriyama , Yasuhiro Fujita
发明人： Yoshito Ikeda , Hironobu Moriyama , Yasuhiro Fujita
IPC分类号： H01M2/00
CPC分类号： H01M2/105 , H01M2/1094
摘要： In a battery pack including a battery case containing therein a battery cell, a wiring circuit board, and a liquid-absorbing element capable of absorbing the electrolyte leaking out from the battery cell, the liquid-absorbing element is inserted with looseness allowing for expansion in a gap formed by a retaining element on the inner wall surface of the battery case or retaining element on the wiring circuit board. Alternatively, a liquid-absorbing element consisting of a non-absorbent porous retaining element partially holding a liquid absorbent is used and the porous retaining element is fixed to the inner wall surface of the battery case or the wiring circuit board at an absorbent-free zone.
摘要翻译：在包含容纳电池单元的电池壳体，布线电路板和能够吸收从电池单元泄漏的电解液的液体吸收元件的电池组中，液体吸收元件插入松动以允许膨胀由保持元件形成在电池壳体的内壁表面上或者布线电路板上的保持元件上的间隙。或者，使用由部分保持液体吸收剂的非吸收性多孔保持元件构成的液体吸收元件，并且多孔保持元件在无吸收区域固定到电池壳体或布线电路板的内壁表面。

67. 发明申请

US20070020896A1 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070020896A1
公开(公告)日：2007-01-25
申请号：US11527695
申请日：2006-09-27
申请人： Kaoru Inoue , Yoshito Ikeda , Yutaka Hirose , Katsunori Nishii
发明人： Kaoru Inoue , Yoshito Ikeda , Yutaka Hirose , Katsunori Nishii
IPC分类号： H01L21/26 , H01L21/28
CPC分类号： H01L29/66878 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L29/66462 , H01L29/8126
摘要： A semiconductor device has an active region composed of a group III-V nitride semiconductor and ohmic electrodes and a gate electrode each formed on the active region. The active region has an entire surface thereof exposed to a plasma such that a surface potential for electrons therein is lower than in the case where the entire surface is not exposed to the plasma.
摘要翻译：半导体器件具有由III-V族氮化物半导体和欧姆电极构成的有源区域和分别形成在有源区域上的栅电极。有源区域的整个表面暴露于等离子体，使得其中的电子的表面电位低于整个表面不暴露于等离子体的情况。

68. 发明申请

US20060289894A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20060289894A1
公开(公告)日：2006-12-28
申请号：US11455631
申请日：2006-06-20
申请人： Tomohiro Murata , Yutaka Hirose , Yoshito Ikeda , Tsuyoshi Tanaka , Kaoru Inoue , Daisuke Ueda , Yasuhiro Uemoto
发明人： Tomohiro Murata , Yutaka Hirose , Yoshito Ikeda , Tsuyoshi Tanaka , Kaoru Inoue , Daisuke Ueda , Yasuhiro Uemoto
IPC分类号： H01L31/00
CPC分类号： H01L29/7787 , H01L21/02425 , H01L21/02458 , H01L21/0254 , H01L29/2003 , H01L29/4175 , H01L29/41766
摘要： A semiconductor device has: a buffer layer formed on a conductive substrate and made of AlxGa1−xN with a high resistance; an element-forming layer formed on the buffer layer, having a channel layer, and made of undoped GaN and N-type AlyGa1−N; and a source electrode, a drain electrode and a gate electrode which are selectively formed on the element-forming layer. The source electrode is filled in a through hole provided in the buffer layer and the element-forming layer, and is thus electrically connected to the conductive substrate.
摘要翻译：半导体器件具有：形成在导电衬底上并具有高电阻的Al x Ga 1-x N的缓冲层; 形成在缓冲层上的元件形成层，具有沟道层，并由未掺杂的GaN和N型Al x Ga 1 -N构成; 以及选择性地形成在元件形成层上的源电极，漏电极和栅电极。源电极被填充在设置在缓冲层和元件形成层中的通孔中，因此电连接到导电基板。

69. 发明申请

US20060262331A1 Image forming apparatus and image forming method 审中-公开
标题翻译：图像形成装置及图像形成方法
公开(公告)号：US20060262331A1
公开(公告)日：2006-11-23
申请号：US11436568
申请日：2006-05-19
申请人： Yoshito Ikeda
发明人： Yoshito Ikeda
IPC分类号： G06K15/12
CPC分类号： G06K15/1219
摘要： An image forming apparatus includes a writing control unit that generates a writing clock based on a plurality of pixel clocks by adjusting a width of the writing clock in units of a width of a cycle of the pixel clock. The writing clock is then used to control emission of light from light-emitting elements when forming a latent image on a photosensitive member.
摘要翻译：一种图像形成装置，包括一个写入控制单元，该写入控制单元通过以像素时钟的周期的宽度为单位调整写入时钟的宽度来生成基于多个像素时钟的写入时钟。然后，当在感光构件上形成潜像时，写入时钟用于控制来自发光元件的光的发射。

70. 发明授权

US06933181B2 Method for fabricating semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06933181B2
公开(公告)日：2005-08-23
申请号：US10620430
申请日：2003-07-17
申请人： Kaoru Inoue , Yoshito Ikeda , Katsunori Nishii , Yutaka Hirose
发明人： Kaoru Inoue , Yoshito Ikeda , Katsunori Nishii , Yutaka Hirose
IPC分类号： H01L21/316 , H01L21/335 , H01L29/20 , H01L29/778 , H01L21/00
CPC分类号： H01L29/66462 , H01L21/02178 , H01L21/02238 , H01L21/02241 , H01L21/02255 , H01L21/31662 , H01L21/31666 , H01L29/2003 , H01L29/7787 , Y10S148/113
摘要： In a method for fabricating a semiconductor device, a first semiconductor layer of aluminum gallium nitride is first formed on a substrate, and a protection film containing silicon is then formed on the first semiconductor layer in such a manner that a device-isolation region is uncovered. Thereafter, the method further includes the step of heat-treating the first semiconductor layer in an oxidizing atmosphere whose temperature is adjusted to be within a range of 950° C. or more and 1050° C. or less.
摘要翻译：在制造半导体器件的方法中，首先在衬底上形成氮化镓铝的第一半导体层，然后在第一半导体层上形成包含硅的保护膜，使得器件隔离区域不被覆盖。此后，该方法还包括在温度调节在950℃以上且1050℃以下的氧化气氛中对第一半导体层进行热处理的工序。

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