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61. 发明授权

US07638421B2 Manufacturing method for semiconductor device and semiconductor device 有权
标题翻译：半导体器件和半导体器件的制造方法
公开(公告)号：US07638421B2
公开(公告)日：2009-12-29
申请号：US11717010
申请日：2007-03-13
申请人： Kazumasa Tanida , Yoshihiko Nemoto , Mitsuo Umemoto
发明人： Kazumasa Tanida , Yoshihiko Nemoto , Mitsuo Umemoto
IPC分类号： H01L21/44
CPC分类号： H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/03912 , H01L2224/0401 , H01L2224/05017 , H01L2224/05022 , H01L2224/05027 , H01L2224/05572 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/1147 , H01L2224/11902 , H01L2224/13006 , H01L2224/13007 , H01L2224/13099 , H01L2224/13144 , H01L2924/0001 , H01L2924/00013 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01015 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01056 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/3025 , H01L2924/00014 , H01L2224/05099 , H01L2224/13599 , H01L2224/05599 , H01L2224/29099 , H01L2224/29599 , H01L2224/05552
摘要： A manufacturing method for a semiconductor device, including the steps of: forming a passivation film that covers a surface of a semiconductor substrate on which electrodes have been formed, in which an opening is formed so as to expose a predetermined electrode from among the electrodes; forming a diffusion prevention plug of a first metal in the vicinity of the opening in the passivation film; supplying a second metal material to the surface of the semiconductor substrate on which the diffusion prevention plug has been formed, so as to form a seed layer of the second metal; forming a resist film that covers the seed layer and in which an opening is formed so as to expose a predetermined region of the seed layer on the diffusion prevention plug; supplying a third metal material into the opening in the resist film so as to form a protrusion electrode of the third metal; removing the resist film after the step of forming a protrusion electrode; and removing the seed layer after the step of forming a protrusion electrode.
摘要翻译：一种半导体器件的制造方法，包括以下步骤：形成覆盖形成有电极的半导体衬底的表面的钝化膜，其中形成有开口以从电极中露出预定电极; 在钝化膜中的开口附近形成第一金属的防扩散插塞; 将第二金属材料供给到已经形成有扩散防止塞的半导体基板的表面上，以形成第二金属的籽晶层; 形成覆盖种子层并形成有开口的抗蚀剂膜，以暴露防扩散插塞上的籽晶层的预定区域; 将第三金属材料供应到所述抗蚀剂膜的开口中，以形成所述第三金属的突出电极; 在形成突起电极的步骤之后去除抗蚀剂膜; 以及在形成突起电极的步骤之后去除种子层。

62. 发明授权

US07598613B2 Flip chip bonding structure 有权
标题翻译：倒装芯片结合结构
公开(公告)号：US07598613B2
公开(公告)日：2009-10-06
申请号：US11597422
申请日：2005-09-01
申请人： Kazumasa Tanida , Osamu Miyata
发明人： Kazumasa Tanida , Osamu Miyata
IPC分类号： H01L23/48 , H01L21/00 , B23K31/02
CPC分类号： H01L24/81 , H01L23/49811 , H01L24/16 , H01L25/0657 , H01L2224/05001 , H01L2224/05022 , H01L2224/05027 , H01L2224/05568 , H01L2224/05573 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/13099 , H01L2224/13109 , H01L2224/13111 , H01L2224/13116 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13609 , H01L2224/16145 , H01L2224/16225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/8121 , H01L2224/81815 , H01L2224/83102 , H01L2224/92125 , H01L2225/06513 , H01L2924/00014 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2224/05099
摘要： A semiconductor device is provided with: a solid device having a connection surface formed with a connection electrode projected therefrom; a semiconductor chip which has a functional surface formed with a metal bump projected therefrom and which is bonded to the connection surface of the solid device as directing its functional surface to the connection surface and maintaining a predetermined distance between the functional surface and the connection surface; and a connecting member containing a low melting point metal having a lower solidus temperature than that of the connection electrode and the bump, and interconnecting the connection electrode and the bump. A sum of a height of the connection electrode and a height of the bump is not less than a half of the predetermined distance.
摘要翻译：半导体器件具有：固体器件，其具有形成有从其突出的连接电极的连接表面; 半导体芯片，其具有形成有从其突出的金属凸块的功能表面，并且将其功能表面指向连接表面并且在功能表面和连接表面之间保持预定距离，并将其粘结到固体设备的连接表面; 以及连接构件，其包含具有比连接电极和凸块的固相线低的固相线温度的低熔点金属，并且使连接电极和凸块相互连接。连接电极的高度和凸起的高度之和不小于预定距离的一半。

63. 发明申请

US20090079020A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090079020A1
公开(公告)日：2009-03-26
申请号：US12212754
申请日：2008-09-18
申请人： Kazumasa Tanida , Masahiro Sekiguchi , Susumu Harada
发明人： Kazumasa Tanida , Masahiro Sekiguchi , Susumu Harada
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L27/14618 , H01L2224/02372 , H01L2224/05001 , H01L2224/05022 , H01L2224/05548 , H01L2224/0557 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05666 , H01L2224/13 , H01L2224/13025 , H01L2924/00014 , H01L2924/16235 , H01L2224/05099
摘要： A semiconductor device includes a semiconductor substrate having a first surface in which a light-receiving portion and electrodes are provided. The semiconductor substrate has a penetrating wiring layer connecting the first surface and the second surface. A light-transmissive protective member is disposed on the semiconductor substrate so as to cover the first surface. A gap is provided between the semiconductor substrate and the light-transmissive protective member. A protective film is formed at a surface of the light-transmissive protective member. The protective film has an opening provided at a region corresponding to the light-receiving portion.
摘要翻译：半导体器件包括具有其中设置有光接收部分和电极的第一表面的半导体衬底。半导体衬底具有连接第一表面和第二表面的穿透布线层。透光性保护构件设置在半导体衬底上以覆盖第一表面。在半导体衬底和透光保护构件之间设置间隙。在透光保护部件的表面形成有保护膜。保护膜具有设置在与受光部对应的区域的开口部。

64. 发明授权

US07416963B2 Manufacturing method of semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US07416963B2
公开(公告)日：2008-08-26
申请号：US11182055
申请日：2005-07-15
申请人： Mitsuo Umemoto , Yoshio Okayama , Kazumasa Tanida , Hiroshi Terao , Yoshihiko Nemoto
发明人： Mitsuo Umemoto , Yoshio Okayama , Kazumasa Tanida , Hiroshi Terao , Yoshihiko Nemoto
IPC分类号： H01L21/00 , H01L21/44 , H01L29/40 , H01L23/52 , H01L23/48
CPC分类号： H01L21/76898 , H01L2224/0231 , H01L2224/02372 , H01L2224/05548
摘要： This invention offers a manufacturing method to reduce a manufacturing cost of a semiconductor device having a through-hole electrode by simplifying a manufacturing process and to enhance yield of the semiconductor device. A first insulation film is formed on a top surface of a semiconductor substrate. A part of the first insulation film is etched to form an opening in which a part of the semiconductor substrate is exposed. Then a pad electrode is formed in the opening and on the first insulation film. A second insulation film is formed on a back surface of the semiconductor substrate. Then a via hole having an aperture larger than the opening is formed. And a third insulation film is formed in the via hole and on the second insulation film. The third insulation film on a bottom of the via hole is etched to expose the pad electrode. After that, a through-hole electrode and a wiring layer are formed in the via hole. Finally, the semiconductor substrate is cut and separated into a plurality of semiconductor dice.
摘要翻译：本发明提供了通过简化制造工艺并提高半导体器件的产量来降低具有通孔电极的半导体器件的制造成本的制造方法。第一绝缘膜形成在半导体衬底的顶表面上。蚀刻第一绝缘膜的一部分以形成半导体衬底的一部分露出的开口。然后在开口和第一绝缘膜上形成焊盘电极。第二绝缘膜形成在半导体衬底的背面上。然后形成具有比开口大的孔的通孔。并且在通孔和第二绝缘膜上形成第三绝缘膜。对通孔的底部的第三绝缘膜进行蚀刻以露出焊盘电极。之后，在通孔中形成通孔电极和布线层。最后，将半导体衬底切割并分离成多个半导体管芯。

65. 发明授权

US07122457B2 Semiconductor chip production method, semiconductor device production method, semiconductor chip, and semiconductor device 有权
标题翻译：半导体芯片生产方法，半导体器件制造方法，半导体芯片和半导体器件
公开(公告)号：US07122457B2
公开(公告)日：2006-10-17
申请号：US10840677
申请日：2004-05-07
申请人： Kazumasa Tanida , Yoshihiko Nemoto , Naotaka Tanaka
发明人： Kazumasa Tanida , Yoshihiko Nemoto , Naotaka Tanaka
IPC分类号： H01L21/44
CPC分类号： H01L25/50 , H01L21/76898 , H01L23/3128 , H01L23/481 , H01L24/11 , H01L24/48 , H01L25/0657 , H01L2224/02372 , H01L2224/06181 , H01L2224/13025 , H01L2224/13099 , H01L2224/14181 , H01L2224/16145 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06586 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01049 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2224/45099
摘要： A semiconductor chip production method including the steps of: forming a front side recess in a semiconductor substrate; depositing a metal material in the front side recess to form a front side electrode electrically connected to a functional device formed on the front surface; removing a rear surface portion of the semiconductor substrate to reduce the thickness of the semiconductor substrate to a thickness greater than the depth of the front side recess; forming a rear side recess communicating with the front side recess in the rear surface of the semiconductor substrate after the thickness reducing step; and depositing a metal material in the rear side recess to form a rear side electrode electrically connected to the front side electrode for formation of a through-electrode.
摘要翻译：一种半导体芯片制造方法，包括以下步骤：在半导体衬底中形成前侧凹部; 在所述前侧凹部中沉积金属材料，以形成与形成在所述前表面上的功能元件电连接的前侧电极; 去除半导体衬底的后表面部分以将半导体衬底的厚度减小到大于前侧凹槽的深度的厚度; 在所述厚度减小步骤之后形成与所述半导体衬底的后表面中的所述前侧凹部连通的后侧凹部; 以及在后侧凹部中沉积金属材料，以形成与前侧电极电连接以形成贯通电极的后侧电极。

66. 发明申请

US20060033168A1 Manufacturing method of semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US20060033168A1
公开(公告)日：2006-02-16
申请号：US11182055
申请日：2005-07-15
申请人： Mitsuo Umemoto , Yoshio Okayama , Kazumasa Tanida , Hiroshi Terao , Yoshihiko Nemoto
发明人： Mitsuo Umemoto , Yoshio Okayama , Kazumasa Tanida , Hiroshi Terao , Yoshihiko Nemoto
IPC分类号： H01L29/76
CPC分类号： H01L21/76898 , H01L2224/0231 , H01L2224/02372 , H01L2224/05548
摘要： This invention offers a manufacturing method to reduce a manufacturing cost of a semiconductor device having a through-hole electrode by simplifying a manufacturing process and to enhance yield of the semiconductor device. A first insulation film is formed on a top surface of a semiconductor substrate. A part of the first insulation film is etched to form an opening in which a part of the semiconductor substrate is exposed. Then a pad electrode is formed in the opening and on the first insulation film. A second insulation film is formed on a back surface of the semiconductor substrate. Then a via hole having an aperture larger than the opening is formed. And a third insulation film is formed in the via hole and on the second insulation film. The third insulation film on a bottom of the via hole is etched to expose the pad electrode. After that, a through-hole electrode and a wiring layer are formed in the via hole. Finally, the semiconductor substrate is cut and separated into a plurality of semiconductor dice.
摘要翻译：本发明提供了通过简化制造工艺并提高半导体器件的产量来降低具有通孔电极的半导体器件的制造成本的制造方法。第一绝缘膜形成在半导体衬底的顶表面上。蚀刻第一绝缘膜的一部分以形成半导体衬底的一部分露出的开口。然后在开口和第一绝缘膜上形成焊盘电极。第二绝缘膜形成在半导体衬底的背面上。然后形成具有比开口大的孔的通孔。并且在通孔和第二绝缘膜上形成第三绝缘膜。对通孔的底部的第三绝缘膜进行蚀刻以露出焊盘电极。之后，在通孔中形成通孔电极和布线层。最后，将半导体衬底切割并分离成多个半导体管芯。

67. 发明申请

US20050003576A1 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20050003576A1
公开(公告)日：2005-01-06
申请号：US10824639
申请日：2004-04-15
申请人： Mitsuo Umemoto , Kazumasa Tanida
发明人： Mitsuo Umemoto , Kazumasa Tanida
IPC分类号： H01L21/60 , H01L21/44 , H01L21/56 , H01L21/58
CPC分类号： H01L21/563 , H01L24/29 , H01L2224/05568 , H01L2224/05573 , H01L2224/05647 , H01L2224/16225 , H01L2224/73203 , H01L2224/73204 , H01L2224/83192 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/10253 , H01L2924/3511 , H01L2924/00 , H01L2924/00014
摘要： The invention relates to a semiconductor device manufacturing method which can provide high reliability in electric connection between an electrode of a semiconductor chip and a substrate. Sealing resin is coated in a region of a substrate where a first electrode is not formed. A semiconductor chip formed with a second electrode on its end portion is prepared and disposed so as to face to a front surface of the substrate. The end portion of the semiconductor chip is pressed from its back surface by shifting a first movable plate downward to press the second electrode into contact with the first electrode. After then, a center portion of the semiconductor chip is pressed from its back surface by shifting a second movable plate downward to fill a space between the substrate and the semiconductor chip with the sealing resin.
摘要翻译：本发明涉及一种半导体器件制造方法，其可以提供半导体芯片的电极与基板之间的电连接的高可靠性。在不形成第一电极的基板的区域中涂布密封树脂。制备在其端部上形成有第二电极的半导体芯片，并设置成面向基板的前表面。半导体芯片的端部通过向下移动第一可动板而将第二电极与第一电极接触来从其背面按压。然后，通过向下移动第二可移动板，用密封树脂填充基板和半导体芯片之间的空间，从其背面按压半导体芯片的中心部分。

68. 发明授权

US08404586B2 Manufacturing method for semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08404586B2
公开(公告)日：2013-03-26
申请号：US11635044
申请日：2006-12-07
申请人： Kazumasa Tanida , Mitsuo Umemoto , Yukiharu Akiyama
发明人： Kazumasa Tanida , Mitsuo Umemoto , Yukiharu Akiyama
IPC分类号： H01L21/44
CPC分类号： H01L25/0657 , H01L23/481 , H01L24/45 , H01L24/48 , H01L2224/0401 , H01L2224/05008 , H01L2224/05009 , H01L2224/05026 , H01L2224/05147 , H01L2224/1134 , H01L2224/13021 , H01L2224/13025 , H01L2224/13144 , H01L2224/16145 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/73207 , H01L2225/0651 , H01L2225/06513 , H01L2225/06541 , H01L2225/06555 , H01L2225/06582 , H01L2924/00014 , H01L2924/01029 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/04941 , H01L2924/12041 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： A manufacturing method for a semiconductor device includes: the step of preparing a semiconductor chip which is provided with a functional element formed on a front surface side of a semiconductor substrate, a feedthrough electrode which is placed within a through hole that penetrates the semiconductor substrate, a front surface side connection member which protrudes from the front surface, and a rear surface side connection member which has a joining surface within a recess that is formed in a rear surface; the step of preparing a solid state device where a solid state device side connection member for connection to the front surface side connection member is formed on one surface; and the joining step of making the front surface of the semiconductor chip face the first surface of the solid state device by holding the rear surface of the semiconductor chip, and of joining the front surface side connection member to the solid state device side connection member.
摘要翻译：半导体装置的制造方法包括：准备半导体芯片的步骤，该半导体芯片设置有形成在半导体基板的正面侧的功能元件，放置在贯通半导体基板的通孔内的馈通电极，从前表面突出的前表面侧连接构件和在形成在后表面的凹部内具有接合表面的后表面侧连接构件; 制备固态器件的步骤，其中在一个表面上形成用于连接到前表面侧连接部件的固态器件侧连接部件; 并且通过保持半导体芯片的后表面并将前表面侧连接构件接合到固态器件侧连接构件，使半导体芯片的前表面面向固态器件的第一表面的接合步骤。

69. 发明授权

US08089163B2 Semiconductor device production method and semiconductor device 有权
标题翻译：半导体装置的制造方法及半导体装置
公开(公告)号：US08089163B2
公开(公告)日：2012-01-03
申请号：US11396797
申请日：2006-04-04
申请人： Kazumasa Tanida , Yoshihiko Nemoto , Mitsuo Umemoto
发明人： Kazumasa Tanida , Yoshihiko Nemoto , Mitsuo Umemoto
IPC分类号： H01L23/48
CPC分类号： H01L24/13 , H01L24/11 , H01L2224/05001 , H01L2224/05022 , H01L2224/05023 , H01L2224/05027 , H01L2224/05184 , H01L2224/05568 , H01L2224/10126 , H01L2224/1147 , H01L2224/11474 , H01L2224/11901 , H01L2224/1308 , H01L2224/13082 , H01L2224/13109 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/01049 , H01L2924/01052 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/3025 , H01L2924/00014 , H01L2224/131 , H01L2224/13099 , H01L2224/29099 , H01L2224/05611 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05166
摘要： A semiconductor device production method including: the step of forming a stopper mask layer of a first metal on a semiconductor substrate, the stopper mask layer having an opening at a predetermined position thereof; the metal supplying step of supplying a second metal into the opening of the stopper mask layer to form a projection electrode of the second metal; and removing the stopper mask layer after the metal supplying step.
摘要翻译：一种半导体器件制造方法，包括：在半导体衬底上形成第一金属的阻挡掩模层的步骤，所述阻挡掩模层在其预定位置具有开口; 所述金属供给步骤将第二金属供给到所述阻挡掩模层的开口中，以形成所述第二金属的突起电极; 以及在金属供给步骤之后移除止动掩模层。

70. 发明申请

US20100025860A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的半导体器件和制造方法
公开(公告)号：US20100025860A1
公开(公告)日：2010-02-04
申请号：US12533492
申请日：2009-07-31
申请人： Kazumasa Tanida , Mie Matsuo , Masahiro Sekiguchi , Chiaki Takubo
发明人： Kazumasa Tanida , Mie Matsuo , Masahiro Sekiguchi , Chiaki Takubo
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L21/76898 , H01L23/481 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05181 , H01L2224/05184 , H01L2224/05548 , H01L2224/05573 , H01L2224/0558 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/05671 , H01L2224/05681 , H01L2224/05684 , H01L2224/05686 , H01L2224/13 , H01L2924/00014 , H01L2924/01074 , H01L2924/04941 , H01L2924/04953 , H01L2924/01014 , H01L2924/01029
摘要： In one aspect of the present invention, a semiconductor device, may include a semiconductor substrate having a first surface and a second surface opposite to the first surface; a through hole in the semiconductor substrate, including an expansion portion which is provided in a vicinity of the first surface so that an opening area of the first opening is greater than an opening area of a lowermost portion of the expansion portion; a first insulating layer on the first surface of the semiconductor substrate; a first wiring layer on the first insulating layer to close the opening of the first insulating layer; a second insulating layer provided on the expansion portion of the through hole; and a second wiring layer on the second insulating layer to extend from inside of the through hole to the second surface of the semiconductor substrate.
摘要翻译：在本发明的一个方面中，半导体器件可以包括具有第一表面和与第一表面相对的第二表面的半导体衬底; 半导体衬底中的通孔，包括设置在第一表面附近的膨胀部分，使得第一开口的开口面积大于膨胀部分的最下部分的开口面积; 在所述半导体衬底的第一表面上的第一绝缘层; 第一绝缘层上的第一布线层，用于封闭第一绝缘层的开口; 设置在通孔的膨胀部分上的第二绝缘层; 以及在所述第二绝缘层上的从所述通孔的内部延伸到所述半导体衬底的所述第二表面的第二布线层。

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