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61. 发明授权

US06723797B2 Crosslinking agent for water-absorbing resin and water-absorbing material obtained with the same 有权
标题翻译：由此得到的吸水性树脂和吸水材料的交联剂
公开(公告)号：US06723797B2
公开(公告)日：2004-04-20
申请号：US10049002
申请日：2002-06-04
申请人： Satoru Fujii , Yoshiyuki Morita , Tetsuya Hosomi , Nobuaki Aoki
发明人： Satoru Fujii , Yoshiyuki Morita , Tetsuya Hosomi , Nobuaki Aoki
IPC分类号： C08F12002
CPC分类号： C08J3/24 , C08F8/18 , C08J2300/14 , C08K5/053 , C08K5/19
摘要： A crosslinking agent for water-absorbing resins which comprises (A) at least one halohydrin compound selected between (A1) a first halohydrin compound having per molecule at least two halohydrin groups (D) represented by the general formula (I), wherein R1 represents hydrogen or alkyl and X represents chlorine or bromine and (A2) a second halohydrin compound having per molecule at least two halohydrin groups (D) represented by the formula (I) and having per molecule at least one ammonium group (M) represented by the general formula (II), wherein R2's each independently represents a C1-4 hydrocarbon group or benzyl.
摘要翻译：一种吸水性树脂用交联剂，其特征在于，含有（A）至少一种选自（A1）由通式（I）表示的每分子至少两个卤代醇基的第一卤代醇化合物（D）的卤代醇化合物，其中，R1表示氢或烷基，X表示氯或溴，和（A2）每分子具有至少两个由式（I）表示的卤代醇基团（D）并且每分子具有至少一个铵基团（M）的第二卤代醇化合物通式（II），其中R 2各自独立地表示C 1-4烃基或苄基。

62. 发明授权

US5459635A Laminated thin film capacitor and method for producing the same 失效
标题翻译：层叠薄膜电容器及其制造方法
公开(公告)号：US5459635A
公开(公告)日：1995-10-17
申请号：US215816
申请日：1994-03-22
申请人： Atsushi Tomozawa , Eiji Fujii , Hideo Torii , Masumi Hattori , Satoru Fujii , Ryoichi Takayama
发明人： Atsushi Tomozawa , Eiji Fujii , Hideo Torii , Masumi Hattori , Satoru Fujii , Ryoichi Takayama
IPC分类号： H01G4/30 , H01G4/10
CPC分类号： H01G4/306
摘要： A laminated thin film capacitor having a substrate, at least two electrode layers, at least one dielectric layer and a pair of external electrode which are placed on respective side walls of the capacitor, wherein the metal electrode layer and the dielectric layers are laminated alternately on the substrate, and every other metal electrode layers are exposed on each of side walls of the capacitor, which capacitor is excellent in dielectric properties such as a high capacity per unit volume.
摘要翻译：一种叠层薄膜电容器，其具有基板，至少两个电极层，至少一个电介质层和一对外部电极，所述至少一个电介质层和一对外部电极被放置在所述电容器的相应侧壁上，其中所述金属电极层和所述电介质层交替层叠在基板和每个其他金属电极层暴露在电容器的每个侧壁上，该电容器具有优异的介电特性，例如每单位体积的高容量。

63. 发明授权

US4885791A Apparatus for speech recognition 失效
标题翻译：语音识别装置
公开(公告)号：US4885791A
公开(公告)日：1989-12-05
申请号：US920785
申请日：1986-10-20
申请人： Satoru Fujii , Katsuyuki Niyada , Shuji Morii , Taisuke Watanabe
发明人： Satoru Fujii , Katsuyuki Niyada , Shuji Morii , Taisuke Watanabe
IPC分类号： G10L15/00
CPC分类号： G10L15/00
摘要： Disclosed is a speech recognition apparatus comprising: a speech analysis portion for extracting parameters necessary for determination of spoken words; a speech period detecting portion for extracting one or more combinations of speech periods using the parameters; and a structure analysis portion for detecting feature points indicative of phoneme structure of each word and for determining a word through computation of similarity to proposed words in accordance with the presence and absence of the feature points. Therefore, erroneous recognition due to noise introduction or the like can be reduced by detecting one or more combinations of proposed speech periods by the speech period detecting portion. By extracting only necessary number of extracting points, which contribute to the distinguishment between words, with reference to analysis procedure provided for each word, the sharpness of determination is bettered. More stable operation than conventional apparatus has been achieved in connection with time base expansion/compression. Small numbers of parameters obtained through speech analysis are used to reduce the amount of computation, while the above-mentioned parameters are stable against difference in phenemes due to difference in speakers.
摘要翻译：公开了一种语音识别装置，包括：语音分析部分，用于提取确定口语所需的参数; 语音周期检测部分，用于使用参数提取语音周期的一个或多个组合; 以及结构分析部分，用于检测指示每个单词的音素结构的特征点，并且根据特征点的存在和不存在，通过计算与所提出的单词的相似度来确定单词。因此，可以通过由语音周期检测部分检测所提出的语音周期的一个或多个组合来减少由噪声引入引起的错误识别等。通过提取必要数量的提取点，这有助于区分词，参考为每个单词提供的分析程序，提高了确定的清晰度。结合时基扩展/压缩已经实现了比传统装置更稳定的操作。使用通过语音分析获得的少量参数来减少计算量，而上述参数由于扬声器的差异而对于差异性是稳定的。

64. 发明授权

US09236381B2 Nonvolatile memory element, nonvolatile memory apparatus, nonvolatile semiconductor apparatus, and method of manufacturing nonvolatile memory element 有权
标题翻译：非易失性存储元件，非易失性存储装置，非易失性半导体装置以及制造非易失性存储元件的方法
公开(公告)号：US09236381B2
公开(公告)日：2016-01-12
申请号：US12307032
申请日：2007-10-24
申请人： Satoru Fujii , Takeshi Takagi , Shunsaku Muraoka , Koichi Osano , Kazuhiko Shimakawa
发明人： Satoru Fujii , Takeshi Takagi , Shunsaku Muraoka , Koichi Osano , Kazuhiko Shimakawa
IPC分类号： H01L47/00 , H01L27/10 , G11C13/00 , H01L27/24 , H01L45/00
CPC分类号： H01L27/101 , G11C13/0007 , G11C2213/32 , G11C2213/34 , G11C2213/71 , G11C2213/72 , G11C2213/79 , H01L27/2418 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A nonvolatile memory element of the present invention comprises a first electrode (103), a second electrode (105), and a resistance variable layer (104) disposed between the first electrode (103) and the second electrode (104), a resistance value of the resistance variable layer varying reversibly according to an electric signal applied between the electrodes (103), (105), and the resistance variable layer (104) comprises at least a tantalum oxide, and is configured to satisfy 0
摘要翻译：本发明的非易失性存储元件包括第一电极（103），第二电极（105）和设置在第一电极（103）和第二电极（104）之间的电阻变化层（104），电阻值根据施加在电极（103），（105）和电阻变化层（104）之间的电信号可逆地改变的电阻变化层至少包括氧化钽，并且被配置为满足0

65. 发明授权

US08450182B2 Method of manufacturing non-volatile semiconductor memory element and method of manufacturing non-volatile semiconductor memory device 有权
标题翻译：制造非易失性半导体存储元件的方法和制造非易失性半导体存储器件的方法
公开(公告)号：US08450182B2
公开(公告)日：2013-05-28
申请号：US13574254
申请日：2010-12-28
申请人： Satoru Fujii , Takumi Mikawa
发明人： Satoru Fujii , Takumi Mikawa
IPC分类号： H01L27/24
CPC分类号： H01L27/2463 , H01L27/101 , H01L27/2409 , H01L27/2418 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/16 , H01L45/1616 , H01L45/1625
摘要： A method of manufacturing a non-volatile semiconductor memory element including a variable resistance element and a non-ohmic element. The variable resistance element includes a first electrode, a variable resistance layer, and a shared electrode. The non-ohmic element includes the shared electrode, a semiconductor or insulator layer, and a second electrode. The method includes: forming the first electrode on a substrate; forming the variable resistance layer on the first electrode; forming the shared electrode by nitriding a front surface of the variable resistance layer; forming the semiconductor or insulator layer on the shared electrode; and forming the second electrode. In the forming of the shared electrode, a front surface of a transition metal oxide is nitrided by a plasma nitriding process to form the shared electrode comprising a transition metal nitride.
摘要翻译：一种制造包括可变电阻元件和非欧姆元件的非易失性半导体存储元件的方法。可变电阻元件包括第一电极，可变电阻层和共用电极。非欧姆元件包括共用电极，半导体或绝缘体层和第二电极。该方法包括：在基板上形成第一电极; 在所述第一电极上形成所述可变电阻层; 通过对可变电阻层的前表面进行氮化而形成共用电极; 在共用电极上形成半导体层或绝缘体层; 并形成第二电极。在共用电极的形成中，通过等离子体氮化处理使过渡金属氧化物的前表面氮化，形成包含过渡金属氮化物的共用电极。

66. 发明申请

US20130122651A1 MANUFACTURING METHOD OF NON-VOLATILE MEMORY DEVICE 有权
标题翻译：非易失性存储器件的制造方法
公开(公告)号：US20130122651A1
公开(公告)日：2013-05-16
申请号：US13812227
申请日：2011-07-26
申请人： Satoru Fujii , Takumi Mikawa , Haruyuki Sorada
发明人： Satoru Fujii , Takumi Mikawa , Haruyuki Sorada
IPC分类号： H01L45/00
CPC分类号： H01L45/1616 , H01L27/101 , H01L27/2409 , H01L27/2418 , H01L27/2463 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/124 , H01L45/145 , H01L45/146
摘要： Each of the step of forming a first variable resistance layer (18a) and the step of forming a second variable resistance layer (18b) includes performing a cycle once or plural times, the cycle consisting of a first step of introducing a source gas composed of molecules containing atoms of a transition metal; a second step of removing the source gas after the first step; a third step of introducing a reactive gas to form a transition metal oxide after the second step; and a fourth step of removing the reactive gas after the third step. The step of forming the first variable resistance layer (18a) is performed in a state in which the substrate is kept at a temperature at which a self-decomposition reaction of the source gas does not occur. One or plural of conditions used for forming the second variable resistance layer (18b) is/are made different from the one or plural conditions used for forming the first variable resistance layer (18a), the conditions being the temperature of the substrate, an amount of the introduced source gas and an amount of the introduced reactive gas.
摘要翻译：形成第一可变电阻层（18a）的步骤和形成第二可变电阻层（18b）的步骤包括执行一次或多次的循环，所述循环包括：引入由含有过渡金属原子的分子; 在第一步骤之后除去源气体的第二步骤; 在第二步骤之后引入反应气体以形成过渡金属氧化物的第三步骤; 以及在第三步骤之后除去反应气体的第四步骤。形成第一可变电阻层（18a）的步骤是在基板保持在不发生源气体的自分解反应的温度的状态下进行的。使用于形成第二可变电阻层（18b）的一个或多个条件与用于形成第一可变电阻层（18a）的一个或多个条件不同，条件是基板的温度，的引入源气体和一定量的引入的反应气体。

67. 发明授权

US08309946B2 Resistance variable element 有权
标题翻译：电阻变元
公开(公告)号：US08309946B2
公开(公告)日：2012-11-13
申请号：US12935455
申请日：2009-07-22
申请人： Satoru Mitani , Shunsaku Muraoka , Yoshihiko Kanzawa , Koji Katayama , Ryoko Miyanaga , Satoru Fujii , Takeshi Takagi
发明人： Satoru Mitani , Shunsaku Muraoka , Yoshihiko Kanzawa , Koji Katayama , Ryoko Miyanaga , Satoru Fujii , Takeshi Takagi
IPC分类号： H01L47/00
CPC分类号： H01L27/101 , H01L45/08 , H01L45/1233 , H01L45/1273 , H01L45/146 , H01L45/1625 , H01L45/1641
摘要： A resistance variable element of the present invention comprises a first electrode (103), a second electrode (107), and a resistance variable layer which is interposed between the first electrode (103) and the second electrode (107) to contact the first electrode (103) and the second electrode (107), the resistance variable layer being configured to change in response to electric signals with different polarities which are applied between the first electrode (103) and the second electrode (107), the resistance variable layer comprising an oxygen-deficient transition metal oxide layer, and the second electrode (107) comprising platinum having minute hillocks (108).
摘要翻译：本发明的电阻可变元件包括第一电极（103），第二电极（107）和介于第一电极（103）和第二电极（107）之间的电阻变化层，以接触第一电极（103）和第二电极（107），电阻变化层被配置为响应于施加在第一电极（103）和第二电极（107）之间的具有不同极性的电信号而改变，电阻变化层包括氧缺乏的过渡金属氧化物层，以及包含具有分开的小丘（108）的铂的第二电极（107）。

68. 发明申请

US20120235111A1 NONVOLATILE MEMORY ELEMENT HAVING A TANTALUM OXIDE VARIABLE RESISTANCE LAYER 有权
标题翻译：具有氧化钛可变电阻层的非易失性存储元件
公开(公告)号：US20120235111A1
公开(公告)日：2012-09-20
申请号：US13483808
申请日：2012-05-30
申请人： Koichi OSANO , Satoru Fujii , Shunsaku Muraoka
发明人： Koichi OSANO , Satoru Fujii , Shunsaku Muraoka
IPC分类号： H01L45/00
CPC分类号： G11C13/003 , G11C13/0007 , G11C2213/32 , G11C2213/74 , G11C2213/76 , G11C2213/79 , H01L27/101 , H01L27/2409 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1625 , Y10S257/904 , Y10S257/924
摘要： A nonvolatile memory apparatus includes a first electrode, a second electrode, a variable resistance layer, a resistance value of the variable resistance layer reversibly varying between a plurality of resistance states based on an electric signal applied between the electrodes. The variable resistance layer includes at least a tantalum oxide, and is configured to satisfy 0
摘要翻译：非易失性存储装置包括第一电极，第二电极，可变电阻层，基于施加在电极之间的电信号在多个电阻状态之间可逆地变化的可变电阻层的电阻值。可变电阻层至少包括氧化钽，并且当氧化钽由TaOx表示时，其被构造为满足0

69. 发明申请

US20120112153A1 NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20120112153A1
公开(公告)日：2012-05-10
申请号：US13380159
申请日：2011-07-13
申请人： Takeki Ninomiya , Satoru Fujii , Yukio Hayakawa , Takumi Mikawa
发明人： Takeki Ninomiya , Satoru Fujii , Yukio Hayakawa , Takumi Mikawa
IPC分类号： H01L45/00
CPC分类号： H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1675
摘要： Provided is a nonvolatile memory device which requires a lower initializing voltage such that the nonvolatile memory device can be operated at a low voltage. The nonvolatile memory device (10) includes: a first electrode layer (105) formed above a semiconductor substrate (100); a first oxygen-deficient tantalum oxide layer (106x) formed on the first electrode layer (105) and having a composition represented by TaOx where 0.8≦x≦1.9; a second oxygen-deficient tantalum oxide layer (106y) formed on the first oxygen-deficient tantalum oxide layer (106x) and having a composition represented by TaOy where 2.1≦y; and a second electrode layer (107) formed on the second tantalum oxide layer (106y). The second tantalum oxide layer (106y) has a pillar structure including a plurality of pillars.
摘要翻译：提供了一种非易失性存储器件，其需要较低的初始化电压，使得非易失性存储器件可以在低电压下操作。非易失性存储器件（10）包括：形成在半导体衬底（100）上方的第一电极层（105）; 形成在第一电极层（105）上并具有由TaOx表示的组成的第一缺氧钽氧化物层（106x），其中0.8＆lt; 1; x＆nlE; 1.9; 在第一缺氧钽氧化物层（106x）上形成的第二氧缺陷氧化钽层（106y），其具有由TaOy表示的组成，其中2.1＆amp; 和形成在第二钽氧化物层（106y）上的第二电极层（107）。第二钽氧化物层（106y）具有包括多个柱的柱结构。

70. 发明授权

US08148711B2 Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using nonvolatile memory element 有权
标题翻译：非易失性存储元件及其制造方法以及使用非易失性存储元件的非易失性半导体装置
公开(公告)号：US08148711B2
公开(公告)日：2012-04-03
申请号：US12600793
申请日：2008-05-16
申请人： Satoru Fujii , Yoshihiko Kanzawa , Takeshi Takagi , Kazuhiko Shimakawa
发明人： Satoru Fujii , Yoshihiko Kanzawa , Takeshi Takagi , Kazuhiko Shimakawa
IPC分类号： H01L45/00
CPC分类号： H01L27/101 , H01L27/2409 , H01L27/2418 , H01L27/2436 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/145 , H01L45/1625
摘要： A nonvolatile semiconductor apparatus of the present invention comprises (103), a second electrode (105), and a resistance variable layer (104) disposed between the first electrode (103) and the second electrode (105), a resistance value of the resistance variable layer being switchable reversibly in response to an electric signal applied between the electrodes (103), (105), wherein the resistance variable layer (104) comprises an oxide containing tantalum and nitrogen.
摘要翻译：本发明的非易失性半导体装置包括：（103），设置在第一电极（103）和第二电极（105）之间的第二电极（105）和电阻变化层（104），电阻值可变层可响应施加在电极（103），（105）之间的电信号而可逆地切换，其中电阻变化层（104）包括含有钽和氮的氧化物。

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