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    • 63. 发明专利
    • POLYSILANE AND ITS PRODUCTION
    • JPH07300529A
    • 1995-11-14
    • JP33588594
    • 1994-12-22
    • SHINETSU CHEMICAL CO
    • HAMADA YOSHITAKAARAMATA MIKIOFUKUSHIMA MOTOO
    • C08G77/60C08G77/48
    • PURPOSE:To produce, at a high yield under mild conditions, a polysilane which exhibits a high electric conductivity when doped and is suitable as a photoelectric conversion material or a conductive material by subjecting a specific trihydrosilane to condensation by dehydration. CONSTITUTION:A trihydrosilane of formula I [wherein X is halogen, alkyl, fluoroalkyl, alkoxy. (substd.) amino, acyl, or an aldehyde group; Y is H, halogen, alkyl, fluoroalkyl, (substd.) amino, acyl, or an aldehyde group provided that X and Y may combine with each other to form an alkylene or heteroalkylene group and that when Y is H, then X is not alkyl nor fluoroalkyl; m is 1-5; and k is 0-4 provided k+m is 1-5] is subjected to condensation by dehydration to give a polysilane of formula II (wherein X, Y, m, and k each is the same as described above; and n>=3). Thus, a polysilane exhibiting a high electric conductivity when doped and suitable as a photoelectric conversion material, an electric conductive material, etc., is obtd. at a high yield under relatively mild conditions.