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61. 发明授权

US07113426B2 Non-volatile RAM cell and array using nanotube switch position for information state 有权
标题翻译：非易失性RAM单元和阵列使用纳米管开关位置进行信息状态
公开(公告)号：US07113426B2
公开(公告)日：2006-09-26
申请号：US10810963
申请日：2004-03-26
申请人： Thomas Rueckes , Brent M. Segal , Bernard Vogeli , Darren Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
发明人： Thomas Rueckes , Brent M. Segal , Bernard Vogeli , Darren Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
IPC分类号： G11C11/34 , G11C11/00
CPC分类号： G11C23/00 , B82Y10/00 , G11C13/025
摘要： Non-Volatile RAM Cell and Array using Nanotube Switch Position for Information State. A non-volatile memory array includes a plurality of memory cells, each cell receiving a bit line, word line, and release line. Each memory cell includes a cell selection transistor with first, second and third nodes. The first and second nodes are in respective electrical communication with the bit line and the word line. Each cell further includes an electromechanically deflectable switch, having a first, second and third node. The first node is in electrical communication with the release line, and a third node is in electrical communication with the third node of the cell selection transistor. The electromechanically deflectable switch includes a nanotube switching element physically positioned between the first and third nodes of the switch and in electrical communication with the second node of the switch. The second node of the switch is in communication with a reference signal. Each nanotube switching element is deflectable into contact with the third node of the switch in response to signals at the first and second node of the cell selection transistor and is releasable from such contact in response to a signal at the release line. In preferred embodiments, the cell selection transistor is a FET and the second node of the transistor is a gate of the FET.
摘要翻译：非易失性RAM单元和阵列使用纳米管切换位置信息状态。非易失性存储器阵列包括多个存储器单元，每个单元接收位线，字线和释放线。每个存储单元包括具有第一，第二和第三节点的单元选择晶体管。第一和第二节点与位线和字线分别电气通信。每个单元还包括具有第一，第二和第三节点的机电偏转开关。第一节点与释放线电连通，第三节点与小区选择晶体管的第三节点电通信。机电可偏转开关包括物理地位于开关的第一和第三节点之间并与开关的第二节点电通信的纳米管开关元件。交换机的第二个节点与参考信号通信。每个纳米管开关元件响应于电池选择晶体管的第一和第二节点处的信号而偏转成与开关的第三节点接触，并且响应于释放线处的信号而可从该接触件释放。在优选实施例中，电池选择晶体管是FET，晶体管的第二节点是FET的栅极。

62. 发明授权

US07112493B2 Method of making non-volatile field effect devices and arrays of same 有权
标题翻译：制造非易失性场效应器件及其阵列的方法
公开(公告)号：US07112493B2
公开(公告)日：2006-09-26
申请号：US10864751
申请日：2004-06-09
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
IPC分类号： H01L21/8234
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Methods of making non-volatile field effect devices and arrays of same. Under one embodiment, a method of making a non-volatile field effect device includes providing a substrate with a field effect device formed therein. The field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. An electromechanically-deflectable, nanotube switching element is formed over the field effect device. Terminals and corresponding interconnect are provided to correspond to each of the source, drain and gate such that the nanotube switching element is electrically positioned between one of the source, drain and gate and its corresponding terminal, and such that the others of said source, drain and gate are directly connected to their corresponding terminals.
摘要翻译：制造非易失性场效应器件及其阵列的方法。在一个实施例中，制造非易失性场效应器件的方法包括提供其中形成有场效应器件的衬底。场效应器件包括在源极和漏极之间具有场可调通道的源极，漏极和栅极。在场效应器件上形成机电偏转的纳米管开关元件。提供端子和相应的互连件以对应于源极，漏极和栅极中的每一个，使得纳米管开关元件电气地定位在源极，漏极和栅极之间及其对应的端子之间，并且使得其他源极，漏极并且门直接连接到其相应的端子。

63. 发明授权

US06982903B2 Field effect devices having a source controlled via a nanotube switching element 有权
标题翻译：通过纳米管开关元件控制源极的场效应器件
公开(公告)号：US06982903B2
公开(公告)日：2006-01-03
申请号：US10864045
申请日：2004-06-09
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal , Frank Guo
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal , Frank Guo
IPC分类号： G11C11/00
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Field effect devices having a source controlled via a nanotube switching element. Under one embodiment, a field effect device includes a source region and a drain region of a first semiconductor type and a channel region disposed therebetween of a second semiconductor type. The drain region is connected to a corresponding terminal. A gate structure is disposed over the channel region and connected to a corresponding terminal. A nanotube switching element is responsive to a first control terminal and a second control terminal and is electrically positioned in series between the source region and a terminal corresponding to the source region. The nanotube switching element is electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the source region and its corresponding terminal. When the nanotube switching element is in the closed state, the channel conductivity and operation of the device is responsive to electrical stimulus at the terminals corresponding to the source and drain regions and the gate structure.
摘要翻译：通过纳米管开关元件控制源极的场效应器件。在一个实施例中，场效应器件包括第一半导体类型的源极区域和漏极区域以及设置在第二半导体类型之间的沟道区域。漏极区域连接到相应的端子。栅极结构设置在沟道区域上并连接到相应的端子。纳米管开关元件响应于第一控制端子和第二控制端子，并且电源定位在源极区域和与源极区域对应的端子之间。纳米管开关元件在机电上可操作为打开和关闭状态之一，从而打开或关闭源极区域与其对应端子之间的电连通路径。当纳米管开关元件处于闭合状态时，器件的沟道导电性和操作响应于对应于源极和漏极区域以及栅极结构的端子处的电刺激。

64. 发明授权

US06944054B2 NRAM bit selectable two-device nanotube array 失效
标题翻译： NRAM位可选双器件纳米管阵列
公开(公告)号：US06944054B2
公开(公告)日：2005-09-13
申请号：US10810962
申请日：2004-03-26
申请人： Thomas Rueckes , Brent M. Segal , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
发明人： Thomas Rueckes , Brent M. Segal , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
IPC分类号： G11C13/02 , G11C23/00 , G11C11/34
CPC分类号： G11C23/00 , B82Y10/00 , G11C13/025 , Y10S977/943
摘要： A non-volatile memory array includes a plurality of memory cells, each cell receiving a bit line, word line, and release line. Each memory cell includes a cell selection transistor and a restore transistor with first, second and third nodes. Each cell further includes an electromechanically deflectable switch, the position of which manifests the logical state of the cell. Each cell is bit selectable for read and write operations.
摘要翻译：非易失性存储器阵列包括多个存储器单元，每个单元接收位线，字线和释放线。每个存储单元包括单元选择晶体管和具有第一，第二和第三节点的恢复晶体管。每个单元还包括机电偏转开关，其位置表示单元的逻辑状态。每个单元都可以进行读和写操作。

65. 发明授权

US08699268B2 Field effect devices controlled via a nanotube switching element 有权
标题翻译：通过纳米管开关元件控制的场效应器件
公开(公告)号：US08699268B2
公开(公告)日：2014-04-15
申请号：US11973035
申请日：2007-10-05
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
IPC分类号： G11C11/50 , G11C11/52
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Field effect devices having a drain controlled via a nanotube switching element. Under one embodiment, a field effect device includes a source region and a drain region of a first semiconductor type and a channel region disposed therebetween of a second semiconductor type. The source region is connected to a corresponding terminal. A gate structure is disposed over the channel region and connected to a corresponding terminal. A nanotube switching element is responsive to a first control terminal and a second control terminal and is electrically positioned in series between the drain region and a terminal corresponding to the drain region. The nanotube switching element is electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the drain region and its corresponding terminal. When the nanotube switching element is in the closed state, the channel conductivity and operation of the device is responsive to electrical stimulus at the terminals corresponding to the source and drain regions and the gate structure.
摘要翻译：具有通过纳米管开关元件控制的漏极的场效应器件。在一个实施例中，场效应器件包括第一半导体类型的源极区域和漏极区域以及设置在第二半导体类型之间的沟道区域。源区域连接到相应的终端。栅极结构设置在沟道区域上并连接到相应的端子。纳米管开关元件响应于第一控制端子和第二控制端子，并且电连接地定位在漏极区域和对应于漏极区域的端子之间。纳米管开关元件在机电上可操作地处于打开和关闭状态之一，从而打开或关闭漏区和其相应端之间的电连通路径。当纳米管开关元件处于闭合状态时，器件的沟道导电性和操作响应于对应于源极和漏极区域以及栅极结构的端子处的电刺激。

66. 发明授权

US08580586B2 Memory arrays using nanotube articles with reprogrammable resistance 有权
公开(公告)号：US08580586B2
公开(公告)日：2013-11-12
申请号：US12354102
申请日：2009-01-15
申请人： Claude L. Bertin , Frank Guo , Thomas Rueckes , Steven L. Konsek , Mitchell Meinhold , Max Strasburg , Ramesh Sivarajan , X. M. Henry Huang
发明人： Claude L. Bertin , Frank Guo , Thomas Rueckes , Steven L. Konsek , Mitchell Meinhold , Max Strasburg , Ramesh Sivarajan , X. M. Henry Huang
IPC分类号： H01L21/00
CPC分类号： G11C13/025 , B82Y10/00 , G11C13/0002 , G11C2213/16 , G11C2213/19 , G11C2213/35 , G11C2213/79
摘要： A memory array includes a plurality of memory cells, each of which receives a bit line, a first word line, and a second word line. Each memory cell includes a cell selection circuit, which allows the memory cell to be selected. Each memory cell also includes a two-terminal switching device, which includes first and second conductive terminals in electrical communication with a nanotube article. The memory array also includes a memory operation circuit, which is operably coupled to the bit line, the first word line, and the second word line of each cell. The circuit can select the cell by activating an appropriate line, and can apply appropriate electrical stimuli to an appropriate line to reprogrammably change the relative resistance of the nanotube article between the first and second terminals. The relative resistance corresponds to an informational state of the memory cell.

67. 发明授权

US08362525B2 Field effect device having a channel of nanofabric and methods of making same 有权
标题翻译：具有纳米通道的场效应器件及其制造方法
公开(公告)号：US08362525B2
公开(公告)日：2013-01-29
申请号：US11332529
申请日：2006-01-13
申请人： Claude L. Bertin , Mitchell Meinhold , Steven L. Konsek , Thomas Rueckes , Frank Guo
发明人： Claude L. Bertin , Mitchell Meinhold , Steven L. Konsek , Thomas Rueckes , Frank Guo
IPC分类号： H01L21/335 , H01L21/336 , H01L29/76
CPC分类号： B82Y10/00 , H01L21/823807 , H01L51/0048 , H01L51/0052 , H01L51/0508 , H01L51/0541
摘要： Field effect devices having channels of nanofabric and methods of making same. A nanotube field effect transistor is made to have a substrate, and a drain region and a source region in spaced relation relative to each other. A channel region is formed from a fabric of nanotubes, in which the nanotubes of the channel region are substantially all of the same semiconducting type of nanotubes. At least one gate is formed in proximity to the channel region so that the gate may be used to modulate the conductivity of the channel region so that a conductive path may be formed between the drain and source region. Forming a channel region includes forming a fabric of nanotubes in which the fabric has both semiconducting and metallic nanotubes and the fabric is processed to remove substantially all of the metallic nanotubes.
摘要翻译：具有纳米级通道的场效应器件及其制造方法。使纳米管场效应晶体管具有衬底，以及相对于彼此间隔开的漏极区域和源极区域。通道区域由纳米管的织物形成，其中沟道区的纳米管基本上都是相同的半导体类型的纳米管。在通道区域附近形成至少一个栅极，使得栅极可用于调制沟道区域的导电性，使得可以在漏极和源极区域之间形成导电路径。形成通道区域包括形成纳米管织物，其中织物具有半导体和金属纳米管，并且织物被处理以去除基本上所有的金属纳米管。

68. 发明授权

US08319205B2 Nonvolatile nanotube programmable logic devices and a nonvolatile nanotube field programmable gate array using same 有权
公开(公告)号：US08319205B2
公开(公告)日：2012-11-27
申请号：US12536815
申请日：2009-08-06
申请人： Claude L. Bertin , Thomas Rueckes , H. M. Manning
发明人： Claude L. Bertin , Thomas Rueckes , H. M. Manning
IPC分类号： H01L29/66
CPC分类号： G11C13/0069 , B82Y10/00 , G11C13/0004 , G11C13/0007 , G11C13/004 , G11C13/0061 , G11C13/025 , G11C23/00 , G11C29/02 , G11C29/021 , G11C29/023 , G11C29/028 , G11C2013/0042 , G11C2013/0054 , G11C2213/35 , G11C2213/82 , H03K19/17728 , H03K19/17736 , H03K19/1776 , H03K19/1778 , H03K19/17796 , Y10S977/94
摘要： Field programmable device (FPD) chips with large logic capacity and field programmability that are in-circuit programmable are described. FPDs use small versatile nonvolatile nanotube switches that enable efficient architectures for dense low power and high performance chip implementations and are compatible with low cost CMOS technologies and simple to integrate.

69. 发明授权

US08217490B2 Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same 有权
标题翻译：非挥发性纳米管二极管和非易失性纳米管块及使用其的系统及其制造方法
公开(公告)号：US08217490B2
公开(公告)日：2012-07-10
申请号：US11835856
申请日：2007-08-08
申请人： Claude L. Bertin , Thomas Rueckes , X. M. Henry Huang , Ramesh Sivarajan , Eliodor G. Ghenciu , Steven L. Konsek , Mitchell Meinhold , Jonathan W. Ward , Darren K. Brock
发明人： Claude L. Bertin , Thomas Rueckes , X. M. Henry Huang , Ramesh Sivarajan , Eliodor G. Ghenciu , Steven L. Konsek , Mitchell Meinhold , Jonathan W. Ward , Darren K. Brock
IPC分类号： G11C11/56 , G11C5/00 , H01L29/00
CPC分类号： H01L27/1021 , B82Y10/00 , G11C13/025 , G11C2213/19 , G11C2213/71 , G11C2213/72 , H01L21/8221 , H01L27/0688 , H01L27/1203 , Y10S977/943
摘要： Under one aspect, a non-volatile nanotube switch includes a first terminal; a nanotube block including a multilayer nanotube fabric, at least a portion of which is positioned over and in contact with at least a portion of the first terminal; a second terminal, at least a portion of which is positioned over and in contact with at least a portion of the nanotube block, wherein the nanotube block is constructed and arranged to prevent direct physical and electrical contact between the first and second terminals; and control circuitry capable of applying electrical stimulus to the first and second terminals. The nanotube block can switch between a plurality of electronic states in response to a plurality of electrical stimuli applied by the control circuitry to the first and second terminals. For each different electronic state, the nanotube block provides an electrical pathway of different resistance between the first and second terminals.
摘要翻译：在一个方面，非挥发性纳米管开关包括第一端子; 纳米管块，其包括多层纳米管织物，其至少一部分位于所述第一端子的至少一部分上方并与其接触; 第二端子，其至少一部分定位在所述纳米管块的至少一部分上方并与所述纳米管块的至少一部分接触，其中所述纳米管块被构造和布置成防止所述第一和第二端子之间的直接物理和电接触; 以及能够向第一和第二终端施加电刺激的控制电路。响应于由控制电路施加到第一和第二端子的多个电刺激，纳米管块可以在多个电子状态之间切换。对于每个不同的电子状态，纳米管块提供在第一和第二端子之间具有不同电阻的电路径。

70. 发明授权

US07986546B2 Non-volatile shadow latch using a nanotube switch 有权
标题翻译：使用纳米管开关的非易失性阴影锁存器
公开(公告)号：US07986546B2
公开(公告)日：2011-07-26
申请号：US12165007
申请日：2008-06-30
申请人： Claude L. Bertin , Frank Guo , Thomas Rueckes , Steven L. Konsek , Mitchell Meinhold , Max Strasburg , Ramesh Sivarajan , X. M. Henry Huang
发明人： Claude L. Bertin , Frank Guo , Thomas Rueckes , Steven L. Konsek , Mitchell Meinhold , Max Strasburg , Ramesh Sivarajan , X. M. Henry Huang
IPC分类号： G11C11/00
CPC分类号： G11C13/025 , B82Y10/00 , G11C13/0002 , G11C14/0054 , G11C2213/19 , G11C2213/35 , Y10S977/943
摘要： A non-volatile memory cell includes a volatile storage device that stores a corresponding logic state in response to electrical stimulus; and a shadow memory device coupled to the volatile storage device. The shadow memory device receives and stores the corresponding logic state in response to electrical stimulus. The shadow memory device includes a non-volatile nanotube switch that stores the corresponding state of the shadow device.
摘要翻译：非易失性存储单元包括：易失性存储装置，其响应于电刺激而存储对应的逻辑状态; 以及耦合到所述易失性存储装置的影子存储装置。影子存储装置响应于电刺激而接收和存储对应的逻辑状态。影子存储装置包括存储影子装置的相应状态的非易失性纳米管开关。

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