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61. 发明授权

US08351250B2 Programmable resistance memory 有权
标题翻译：可编程电阻记忆
公开(公告)号：US08351250B2
公开(公告)日：2013-01-08
申请号：US12229997
申请日：2008-08-28
申请人： Tyler Lowrey
发明人： Tyler Lowrey
IPC分类号： G11C11/00
CPC分类号： G11C13/0004 , G11C2213/72
摘要： A memory includes a programmable resistance array and unipolar MOS peripheral circuitry. The peripheral circuitry includes address decoding circuitry. Because unipolar MOS circuitry is employed, the number of mask steps and, concomitantly, the cost of the programmable resistance memory may be minimized.
摘要翻译：存储器包括可编程电阻阵列和单极MOS外围电路。外围电路包括地址解码电路。因为采用单极MOS电路，所以可以将屏蔽步骤的数量以及伴随的可编程电阻存储器的成本最小化。

62. 发明授权

US08344350B2 Phase change device with offset contact 有权
标题翻译：相移装置，带偏置接点
公开(公告)号：US08344350B2
公开(公告)日：2013-01-01
申请号：US13093109
申请日：2011-04-25
申请人： Wolodymyr Czubatyj , Tyler Lowrey
发明人： Wolodymyr Czubatyj , Tyler Lowrey
IPC分类号： H01L21/06 , H01L45/00
CPC分类号： H01L45/1683 , H01L45/06 , H01L45/1206 , H01L45/122 , H01L45/1226 , H01L45/126
摘要： A programmable resistance memory combines multiple cells into a block that includes one or more shared electrodes. The shared electrode configuration provides additional thermal isolation for the active region of each memory cell, thereby reducing the current required to program each memory cell.
摘要翻译：可编程电阻存储器将多个单元组合成包括一个或多个共享电极的块。共享电极配置为每个存储单元的有源区域提供额外的热隔离，从而减少编程每个存储单元所需的电流。

63. 发明授权

US08269206B2 Processing phase change material to improve programming speed 有权
标题翻译：处理相变材料，提高编程速度
公开(公告)号：US08269206B2
公开(公告)日：2012-09-18
申请号：US13004167
申请日：2011-01-11
申请人： Stephen J. Hudgens , Tyler Lowrey
发明人： Stephen J. Hudgens , Tyler Lowrey
IPC分类号： H01L29/02
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1625 , H01L45/165 , H01L45/1658
摘要： A phase change material may be processed to reduce its microcrystalline grain size and may also be processed to increase the crystallization or set programming speed of the material. For example, material doped with nitrogen to reduce grain size may be doped with titanium to reduce crystallization time.
摘要翻译：可以处理相变材料以降低其微晶粒度，并且还可以加工以增加材料的结晶或设定编程速度。例如，掺杂氮以减小晶粒尺寸的材料可以掺杂钛以减少结晶时间。

64. 发明申请

US20120113711A1 Using A Bit Specific Reference Level To Read A Memory 有权
标题翻译：使用位特定参考电平读取存储器
公开(公告)号：US20120113711A1
公开(公告)日：2012-05-10
申请号：US13353531
申请日：2012-01-19
申请人： Tyler Lowrey , Ward D. Parkinson , Ferdinando Bedeschi , Claudio Resta , Roberto Gastaldi , Giulio Casagrande
发明人： Tyler Lowrey , Ward D. Parkinson , Ferdinando Bedeschi , Claudio Resta , Roberto Gastaldi , Giulio Casagrande
IPC分类号： G11C11/00 , G11C5/14 , G11C7/06
CPC分类号： G11C7/14 , G11C11/5678 , G11C13/0004 , G11C13/004 , G11C2013/0054
摘要： A voltage derived from accessing a selected bit using one read current may be utilized to read a selected bit of an untriggered phase change memory after the read current is changed. As a result, different reference voltages may be used to sense the state of more resistive versus a less resistive selected cells. The resulting read window or margin may be improved in some embodiments,
摘要翻译：在读取电流改变之后，可以利用使用一个读取电流访问所选位的电压来读取未触发的相变存储器的选定位。因此，可以使用不同的参考电压来感测比较阻性的选择的单元更多的电阻的状态。在一些实施例中，可以改善所得到的读取窗口或边缘，

65. 发明申请

US20120052651A1 Method and Apparatus for Thin Film Memory 有权
标题翻译：薄膜存储器的方法和装置
公开(公告)号：US20120052651A1
公开(公告)日：2012-03-01
申请号：US13291127
申请日：2011-11-08
申请人： Tyler Lowrey
发明人： Tyler Lowrey
IPC分类号： H01L21/62
CPC分类号： G11C13/003 , G11C5/02 , G11C13/0004 , G11C29/1201 , G11C2213/15 , G11C2213/71 , G11C2213/76 , H01L27/2436 , H01L27/2481 , H01L45/04 , H01L45/1206 , H01L45/1233 , H01L45/141 , H01L45/144
摘要： A multi-layer thin-film device includes thin film memory and thin film logic. The thin film memory may be programmable resistance memory, such as phase change memory, for example. The thin film logic may be complementary logic.
摘要翻译：多层薄膜器件包括薄膜存储器和薄膜逻辑。薄膜存储器可以是可编程电阻存储器，例如相变存储器。薄膜逻辑可以是互补逻辑。

66. 发明授权

US08116159B2 Using a bit specific reference level to read a resistive memory 有权
标题翻译：使用特定的参考电平读取电阻性存储器
公开(公告)号：US08116159B2
公开(公告)日：2012-02-14
申请号：US11093877
申请日：2005-03-30
申请人： Tyler Lowrey , Ward D. Parkinson , Ferdinando Bedeschi , Claudio Resta , Roberto Gastaldi , Giulio Casagrande
发明人： Tyler Lowrey , Ward D. Parkinson , Ferdinando Bedeschi , Claudio Resta , Roberto Gastaldi , Giulio Casagrande
IPC分类号： G11C7/14
CPC分类号： G11C7/14 , G11C11/5678 , G11C13/0004 , G11C13/004 , G11C2013/0054
摘要： A voltage derived from accessing a selected bit using one read current may be utilized to read a selected bit of an untriggered phase change memory after the read current is changed. As a result, different reference voltages may be used to sense the state of more resistive versus a less resistive selected cells. The resulting read window or margin may be improved in some embodiments.
摘要翻译：在读取电流改变之后，可以利用使用一个读取电流访问所选位的电压来读取未触发的相变存储器的选定位。因此，可以使用不同的参考电压来感测比较阻性的选择的单元更多的电阻的状态。在一些实施例中，可以改善所得到的读取窗口或边缘。

67. 发明授权

US08053753B2 Thin film logic circuitry 有权
标题翻译：薄膜逻辑电路
公开(公告)号：US08053753B2
公开(公告)日：2011-11-08
申请号：US12156996
申请日：2008-06-06
申请人： Tyler Lowrey
发明人： Tyler Lowrey
IPC分类号： H01L47/00
CPC分类号： G11C13/003 , G11C5/02 , G11C13/0004 , G11C29/1201 , G11C2213/15 , G11C2213/71 , G11C2213/76 , H01L27/2436 , H01L27/2481 , H01L45/04 , H01L45/1206 , H01L45/1233 , H01L45/141 , H01L45/144
摘要： A multi-layer thin-film device includes thin film memory and thin film logic. The thin film memory may be programmable resistance memory, such as phase change memory, for example. The thin film logic may be complementary logic.
摘要翻译：多层薄膜器件包括薄膜存储器和薄膜逻辑。薄膜存储器可以是可编程电阻存储器，例如相变存储器。薄膜逻辑可以是互补逻辑。

68. 发明申请

US20110155986A1 DUAL RESISTANCE HEATER FOR PHASE CHANGE DEVICES AND MANUFACTURING METHOD THEREOF 有权
标题翻译：用于相变装置的双电阻加热器及其制造方法
公开(公告)号：US20110155986A1
公开(公告)日：2011-06-30
申请号：US12980141
申请日：2010-12-28
申请人： Yudong Kim , Ilya V. Karpov , Charles C. Kuo , Greg Atwood , Maria Santina Marangon , Tyler Lowrey
发明人： Yudong Kim , Ilya V. Karpov , Charles C. Kuo , Greg Atwood , Maria Santina Marangon , Tyler Lowrey
IPC分类号： H01L45/00 , H01L21/02
CPC分类号： H01L45/16 , H01L27/2427 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/1286 , H01L45/141 , H01L45/1683
摘要： A dual resistance heater for a phase change material region is formed by depositing a resistive material. The heater material is then exposed to an implantation or plasma which increases the resistance of the surface of the heater material relative to the remainder of the heater material. As a result, the portion of the heater material approximate to the phase change material region is a highly effective heater because of its high resistance, but the bulk of the heater material is not as resistive and, thus, does not increase the voltage drop and the current usage of the device.
摘要翻译：通过沉积电阻材料形成用于相变材料区域的双电阻加热器。然后将加热器材料暴露于植入或等离子体，这增加了加热器材料表面相对于加热器材料的剩余部分的电阻。结果，由于加热材料的高电阻，加热器材料的部分接近相变材料区域是高效的加热器，而是加热器材料的体积不是电阻的，因此不会增加电压降，当前使用的设备。

69. 发明授权

US07920414B2 Asymmetric-threshold three-terminal switching device 有权
标题翻译：非对称阈值三端开关器件
公开(公告)号：US07920414B2
公开(公告)日：2011-04-05
申请号：US12157076
申请日：2008-06-06
申请人： Tyler Lowrey
发明人： Tyler Lowrey
IPC分类号： G11C11/00
CPC分类号： G11C5/02 , G11C13/0004 , H01L27/2436 , H01L27/2481 , H01L45/04 , H01L45/1206 , H01L45/1233 , H01L45/141 , H01L45/144
摘要： An asymmetric-threshold three-terminal electronic switching device includes three terminals coupled to a threshold-switching material. A signal applied across first and second terminals affects an electrical characteristic between the second and third electrodes to a greater extent than the same signal applied across the first and third electrodes. The affected electrical characteristic may be a threshold voltage or conductivity, for example.
摘要翻译：非对称阈值三端子电子开关器件包括耦合到阈值切换材料的三个端子。施加在第一和第二端子上的信号比施加在第一和第三电极上的相同信号更大程度地影响第二和第三电极之间的电特性。例如，受影响的电特性可以是阈值电压或电导率。

70. 发明申请

US20100321991A1 Chalcogenide Devices Exhibiting Stable Operation from the As-Fabricated State 审中-公开
标题翻译：从制造国展示稳定运行的硫族化物装置
公开(公告)号：US20100321991A1
公开(公告)日：2010-12-23
申请号：US12871975
申请日：2010-08-31
申请人： Sergey A. Kostylev , Tyler Lowrey , Guy Wicker , Wolodymyr Czubatyj
发明人： Sergey A. Kostylev , Tyler Lowrey , Guy Wicker , Wolodymyr Czubatyj
IPC分类号： G11C11/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625
摘要： A chalcogenide material and chalcogenide memory device having less stringent requirements for formation, improved thermal stability and/or faster operation. The chalcogenide materials include materials comprising Ge, Sb and Te in which the Ge and/or Te content is lean relative to the commonly used Ge2Sb2Te5 chalcogenide composition. Electrical devices containing the instant chalcogenide materials show a rapid convergence of the set resistance during cycles of setting and resetting the device from its as-fabricated state, thus leading to a reduced or eliminated need to subject the device to post-fabrication electrical formation prior to end-use operation. Improved thermal stability is manifested in terms of prolonged stability of the resistance of the device at elevated temperatures, which leads to an inhibition of thermally induced setting of the reset state in the device. Significant improvements in the 10 year data retention temperature are demonstrated. Faster device operation is achieved through an increased speed of crystallization, which acts to shorten the time required to transform the chalcogenide material from its reset state to its set state in an electrical memory device.
摘要翻译：一种硫族化物材料和硫族化物记忆装置，其对形成，改进的热稳定性和/或更快的操作要求不太严格。硫属化物材料包括Ge，Sb和Te的材料，其中Ge和/或Te含量相对于通常使用的Ge 2 Sb 2 Te 5硫族化物组合物是稀的。包含瞬时硫族化物材料的电气装置显示设定循环期间的设定电阻的快速收敛以及将器件从其制造状态复位，从而导致减少或消除了将器件置于后制造电形成之前最终使用操作。改进的热稳定性表现在器件在升高的温度下的电阻的延长的稳定性，这导致抑制器件中复位状态的热诱导设置。展示了10年数据保存温度的显着改进。通过提高结晶速度实现更快的器件操作，其用于缩短将硫族化物材料从其复位状态转换到其在电存储器件中的设定状态所需的时间。

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