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61. 发明授权

US5571366A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5571366A
公开(公告)日：1996-11-05
申请号：US327798
申请日：1994-10-20
申请人： Nobuo Ishii , Jiro Hata , Chishio Koshimizu , Yoshifumi Tahara , Hiroshi Nishikawa , Isei Imahashi
发明人： Nobuo Ishii , Jiro Hata , Chishio Koshimizu , Yoshifumi Tahara , Hiroshi Nishikawa , Isei Imahashi
IPC分类号： H01J37/32 , H05H1/00
CPC分类号： H01J37/32082 , H01J37/32091 , H01J37/321 , H01J37/32174 , H01J37/32935 , H01J37/32963 , H01J37/3299 , H01J2237/334 , H01J2237/3343
摘要： A plasma processing apparatus includes a chamber having a gas inlet port and a gas discharge port, a rest table, arranged in the chamber, for supporting a wafer which has a surface to be processed, a radio frequency antenna for supplying a radio frequency energy into the chamber, and generating an induced plasma in the chamber, and a radio frequency voltage source for applying a radio frequency voltage to the radio frequency antenna. A pressure and/or light variation in the chamber is measured during generation of the plasma, by a measurement system, and the radio frequency voltage source is controlled based on a signal from the measurement system, so that voltage to be applied to the antenna is controlled according to the pressure and/or light in the chamber.
摘要翻译：一种等离子体处理装置，包括具有气体入口和气体排出口的室，设置在室内的用于支撑具有待处理表面的晶片的静止台，用于将射频能量供给的射频天线并且在腔室中产生感应等离子体，以及用于向射频天线施加射频电压的射频电压源。通过测量系统在等离子体的产生期间测量室中的压力和/或光的变化，并且基于来自测量系统的信号来控制射频电压源，使得施加到天线的电压为根据腔室内的压力和/或光线进行控制。

62. 发明授权

US5529657A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5529657A
公开(公告)日：1996-06-25
申请号：US317490
申请日：1994-10-04
申请人： Nobuo Ishii
发明人： Nobuo Ishii
IPC分类号： H01J37/32 , H05H1/00
CPC分类号： H01J37/321 , H01J37/32642 , Y10S156/915
摘要： A plasma processing apparatus includes a chamber provided with a susceptor therein for supporting a wafer. A flat coil antenna is mounted on an outer surface of an insulating wall of the chamber to face the wafer. An RF current is supplied to the coil, thereby generating a plasma in the chamber between the coil and the wafer. A focus ring is provided on the susceptor to surround the wafer, which has a projecting portion projecting toward the coil past the surface of the wafer, and consists of an electrical insulator or a high resistor, for directing the plasma generated between the projecting portion and the coil in a direction substantially parallel to the surface of the wafer.
摘要翻译：等离子体处理装置包括在其中设置有用于支撑晶片的基座的室。扁平线圈天线安装在室的绝缘壁的外表面上以面对晶片。向线圈提供RF电流，从而在线圈和晶片之间的腔室中产生等离子体。在基座上设置聚焦环以围绕晶片，其具有朝向线圈突出的突出部分，该突出部分经过晶片的表面，并且由电绝缘体或高电阻器组成，用于引导在突出部分和突出部分之间产生的等离子体线圈在基本上平行于晶片表面的方向上。

63. 发明授权

US5455082A Reduced pressure processing system and reduced pressure processing method 失效
标题翻译：减压处理系统和减压处理方法
公开(公告)号：US5455082A
公开(公告)日：1995-10-03
申请号：US187723
申请日：1994-01-28
申请人： Masasi Saito , Teruo Iwata , Nobuo Ishii , Towl Ikeda , Hiroaki Saeki
发明人： Masasi Saito , Teruo Iwata , Nobuo Ishii , Towl Ikeda , Hiroaki Saeki
IPC分类号： C23C14/56 , H01L21/00 , B05D3/06 , C23C16/00
CPC分类号： H01L21/67213 , C23C14/566 , H01L21/67115 , H01L21/67126 , H01L21/67173 , H01L21/67201 , H01L21/67276
摘要： A reduced pressure processing system includes a load lock chamber having an opening communicating with a process atmosphere in which a wafer is processed and/or the outer air atmosphere, a gate valve which is arranged at the opening to close/open the chamber with respect to the process atmosphere and/or the outer air atmosphere, a robot for loading/unloading the wafer into/from the chamber, an evacuation pump for evacuating the chamber, a heater for heating the wall of the chamber, and a controller for controlling the gate valve, the robot, the evacuation pump, and the heater.
摘要翻译：减压处理系统包括：负载锁定室，具有与处理晶片进行处理的处理气氛和/或外部空气气氛连通的开口;闸阀，其布置在开口处，以关闭/打开室处理气氛和/或外部空气气氛，用于将晶片装入/从室中卸载的机器人，用于抽空室的抽空泵，用于加热室壁的加热器，以及用于控制门的控制器阀门，机器人，排气泵和加热器。

64. 发明授权

US5342472A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5342472A
公开(公告)日：1994-08-30
申请号：US928428
申请日：1992-08-12
申请人： Issei Imahashi , Nobuo Ishii
发明人： Issei Imahashi , Nobuo Ishii
IPC分类号： H01J37/32 , H05H1/00
CPC分类号： H01J37/32238 , H01J37/32192 , H01J37/32678 , H01J37/32706
摘要： Microwave inlet ports are formed on a microwave transmission window above a plasma generation chamber. The distance from the microwave inlet ports to a support surface of a wafer support table is set to be an integer multiple of 1/2 the wavelength of the microwave. Upper and lower magnetic poles opposite to each other are arranged above and below the chamber to form a magnetic field having a uniform strength in the chamber. The strength of the magnetic field is set to be 865 Gauss as a value slightly deviating from 875 Gauss as a value satisfying ideal conditions of an electron cyclotron resonance at a microwave wavelength of 2.45 GHz. The electron energy is suppressed, and damage to the surface of a wafer can be suppressed in wafer surface processing using a plasma.
摘要翻译：微波入口形成在等离子体产生室上方的微波传输窗口上。从微波入口到晶片支撑台的支撑表面的距离设定为微波波长的1/2的整数倍。彼此相对的上下磁极设置在室的上方和下方，以形成在室中具有均匀强度的磁场。磁场的强度被设定为865高斯，作为微波波长为2.45GHz的电子回旋共振理想条件的值，稍微偏离875高斯的值。抑制电子能量，并且可以在使用等离子体的晶片表面处理中抑制对晶片表面的损伤。

65. 发明授权

US5173641A Plasma generating apparatus 失效
标题翻译：等离子体发生装置
公开(公告)号：US5173641A
公开(公告)日：1992-12-22
申请号：US757953
申请日：1991-09-12
申请人： Issei Imahashi , Nobuo Ishii
发明人： Issei Imahashi , Nobuo Ishii
IPC分类号： H01J37/32
CPC分类号： H01J37/32623 , H01J37/32192 , H01J37/32678
摘要： A plasma generating appartus according to the present invention generates a plasma by cyclotron movement of electrons. The apparatus features microwave introducing guides for introducing microwaves, a reaction chamber in which a plasma is generated based on introduced microwaves, a magnetic field generating section, and solenoid coils. The magnetic field generating section features at least a pair of magnetic poles having mutually facing concave surfaces, and a yoke for coupling the magnetic poles to constitute a loop of magnetic force lines. The magnetic poles are arranged to face each other with the microwave introducing guides and the reaction chamber interposed, and the magnetic poles generate a magnetic field of a predetermined magnetic flux density consisting of magnetic force lines directed vertically to a major surface of a sample placed on a support table in the reaction chamber. The solenoid coils can vary the magnetic field of a predetermined magnetic flux density generated by the magnetic field generating section to a magnetic field of a desired magnetic flux density.
摘要翻译：根据本发明的等离子体产生装置通过电子的回旋加速器运动产生等离子体。该装置具有用于引入微波的微波引入引导件，基于引入的微波产生等离子体的反应室，磁场产生部分和电磁线圈。磁场产生部具有至少一对具有相互面对的凹面的磁极和用于耦合磁极以构成磁力线的环的磁轭。磁极被布置为彼此面对，微波引入引导件和反应室被插入，并且磁极产生预定磁通密度的磁场，该磁场由垂直于放置在样品上的样品的主表面的磁力线组成反应室中的支撑台。电磁线圈可以将由磁场产生部产生的预定磁通密度的磁场改变为所需磁通密度的磁场。

66. 发明授权

US07959746B2 Sputtering target material 有权
标题翻译：溅射靶材
公开(公告)号：US07959746B2
公开(公告)日：2011-06-14
申请号：US10575725
申请日：2004-10-08
申请人： Koichi Hasegawa , Nobuo Ishii
发明人： Koichi Hasegawa , Nobuo Ishii
IPC分类号： C22C5/06
CPC分类号： C23C14/14 , C22C5/06 , C22C5/08 , C23C14/205 , C23C14/3414 , G11B7/258 , G11B7/259 , G11B7/2595 , G11B7/266 , Y10T428/21 , Y10T428/31678
摘要： This invention provides sputtering target materials having high reflectance and excellent heat resistance, which are formed of Ag base alloys formed by adding a specific, minor amount of P to Ag and alloying them.
摘要翻译：本发明提供具有高反射率和优异耐热性的溅射靶材料，它们由Ag基合金形成，该Ag基合金通过将特定的少量P加入到Ag中并使其合金而形成。

67. 发明授权

US07481904B2 Plasma device 失效
标题翻译：等离子体装置
公开(公告)号：US07481904B2
公开(公告)日：2009-01-27
申请号：US10508055
申请日：2002-03-18
申请人： Nobuo Ishii
发明人： Nobuo Ishii
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01J37/321
摘要： An etching apparatus has an antenna connected to a radio frequency power supply through a matching box. At the center region of a dielectric plate, a columnar conductor and a cylindrical conduct ring are arranged. Between the columnar conductor and the conductor ring, four conducting wires, each of which forms a substantially circular loop outside the conductor ring, are connected in parallel with the radio frequency power supply. A loop formed by each of the conducting wires is arranged at an equal spacing with each other to be rotationally-symmetric around the axis orthogonal to a mounting table, with the columnar conductor as the center. The loops are arranged on the same plane such that a surface where each loop is placed faces the mounting table.
摘要翻译：蚀刻装置具有通过匹配箱与射频电源连接的天线。在电介质板的中心区域，布置有柱状导体和圆柱形导电环。在柱状导体和导体环之间，在导体环外部形成大致圆形环的四根导线与射频电源并联连接。以每个导线形成的环以彼此相等的间隔布置成围绕垂直于安装台的轴以圆柱形导体为中心旋转对称。环设置在相同的平面上，使得每个环放置的表面面向安装台。

68. 发明授权

US07395779B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US07395779B2
公开(公告)日：2008-07-08
申请号：US10332499
申请日：2001-07-11
申请人： Nobuo Ishii , Kibatsu Shinohara , Yasuyoshi Yasaka
发明人： Nobuo Ishii , Kibatsu Shinohara , Yasuyoshi Yasaka
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32192 , B01J19/088 , B01J2219/0894 , C23C16/24 , C23C16/511
摘要： A first conductive plate (31A) constituting the radiation surface of a slot antenna (30A) inclines with respect to a first dielectric member (13) opposed to the radiation surface of the slot antenna (30A). Consequently, a plasma generated by the electric field of an electromagnetic field entering directly from the slot antenna (30A) can be set dominant over a plasma generated by the electric field of a standing wave formed in a processing vessel (11). Since the former can be controlled more easily than the latter, the plasma distribution can be improved.
摘要翻译：构成缝隙天线（30A）的辐射表面的第一导电板（31a）相对于与缝隙天线（30A）的辐射表面相对的第一电介质构件（13）倾斜。因此，通过由槽式天线（30A）直接进入的电磁场的电场产生的等离子体可以比由处理容器（11）中形成的驻波的电场产生的等离子体主导。由于前者比后者更容易控制，所以可以提高等离子体分布。

69. 发明授权

US07302910B2 Plasma apparatus and production method thereof 有权
标题翻译：等离子体装置及其制造方法
公开(公告)号：US07302910B2
公开(公告)日：2007-12-04
申请号：US10467821
申请日：2002-02-15
申请人： Nobuo Ishii
发明人： Nobuo Ishii
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32211 , H01J37/32192
摘要： A plasma apparatus includes a container (11) having an opening, a dielectric member (13) supported by an end surface of an outer periphery of the opening of the container (11), an electromagnetic field supplying means for supplying an electromagnetic field into the container (11) through the dielectric member (13), and a shield member (12) covering the outer periphery of the dielectric member (13) and shielding the electromagnetic field. A distance L1 from an inner surface of the container (11) to an inner surface of the shield member (12) at an end surface of the container (11) is approximately N/2 (N is an integer not smaller than 0) times the wavelength of the electromagnetic field in an area (18) surrounded by the end surface of the container (11), the electromagnetic field supplying means and the shield member (12).
摘要翻译：等离子体装置包括具有开口的容器（11），由容器（11）的开口的外周的端面支撑的电介质构件（13），电磁场供给装置，用于向通过电介质构件（13）的容器（11）和覆盖电介质构件（13）的外周并屏蔽电磁场的屏蔽构件（12）。从容器（11）的内表面到容器（11）的端面处的屏蔽构件（12）的内表面的距离L L1大约为N / 2（N是在由容器（11）的端面，电磁场供给装置和屏蔽部件（12）所包围的区域（18）内的电磁场的波长的值不小于0的整数。

70. 发明授权

US07243610B2 Plasma device and plasma generating method 失效
标题翻译：等离子体装置和等离子体生成方法
公开(公告)号：US07243610B2
公开(公告)日：2007-07-17
申请号：US10466602
申请日：2002-01-18
申请人： Nobuo Ishii , Makoto Ando , Masaharu Takahashi
发明人： Nobuo Ishii , Makoto Ando , Masaharu Takahashi
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32192 , H01J37/3244
摘要： A plasma device includes a slot antenna (30) for supplying a high frequency electromagnetic field (F) supplied through a feeding part into a processing vessel (11). The feeding part has a cavity (35) for forming a resonator and converting the fed high frequency electromagnetic field (F) into a rotating electromagnetic field and supplying the rotating electromagnetic field to the slot antenna (30).
摘要翻译：等离子体装置包括用于将通过供给部分供应的高频电磁场（F）提供到处理容器（11）中的缝隙天线（30）。馈电部分具有用于形成谐振器并将馈送的高频电磁场（F）转换成旋转电磁场并将旋转电磁场提供给缝隙天线（30）的空腔（35）。

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