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    • 64. 发明授权
    • Cephalosporin compounds
    • 头孢菌素化合物
    • US4393058A
    • 1983-07-12
    • US188417
    • 1980-09-18
    • Osamu MakabeYasushi MuraiTuneo OkonogiMasahiro OnoderaYoshiyuki KoyamaTakashi Yoshida
    • Osamu MakabeYasushi MuraiTuneo OkonogiMasahiro OnoderaYoshiyuki KoyamaTakashi Yoshida
    • A61K31/545A61K31/546A61P31/04C07C45/71C07D213/80C07D213/82C07D213/85C07D501/36
    • C07D213/80C07C45/71C07D213/82C07D213/85
    • Cephalosporin compounds, intermediate compounds therefor, and processes for preparation thereof are described; the compounds have the formula (I) ##STR1## wherein R.sub.1 and R.sub.2 can each represent hydrogen, a hydroxyl group, a lower alkoxy group, or a substituted or unsubstituted phenylalkoxy group; R.sub.3 represents hydrogen or a lower alkyl group; R.sub.4 represents hydrogen or a hydroxyl group; and R.sub.5 represents ##STR2## wherein R.sub.6 is hydrogen, a lower alkyl group, an aminoalkyl group, an aminoaralkyl group, a --(CH.sub.2).sub.n --SO.sub.3 Na group, or a --(CH.sub.2).sub.n --COR.sub.9 group [wherein R.sub.9 is a hydroxyl group, an OM group (wherein M is an alkali metal), an alkoxy group, or an ##STR3## group, (wherein R.sub.10 and R.sub.11, which may be the same or different, can represent hydrogen or an alkyl group), and n is 0 or an integer of from 1 to 4]; R.sub.7 is hydrogen, a lower alkyl group, an amino group, or a substituted or unsubstituted aryl group; and R.sub.8 represents hydrogen or a lower alkyl group; or, a pharmaceutically acceptable salt thereof.
    • 描述头孢菌素化合物,其中间体化合物及其制备方法; 化合物具有式(I)其中R 1和R 2各自表示氢,羟基,低级烷氧基或取代或未取代的苯基烷氧基; R3表示氢或低级烷基; R4代表氢或羟基; 其中R6为氢,低级烷基,氨基烷基,氨基烷基, - (CH2)n-SO3Na基或 - (CH2)n-COR9基[ 其中R 9为羟基,OM基(其中M为碱金属),烷氧基或基团(其中R10和R11可以相同或不同,表示氢或烷基 组),n为0或1〜4的整数]。 R7是氢,低级烷基,氨基或取代或未取代的芳基; R8代表氢或低级烷基; 或其药学上可接受的盐。
    • 67. 发明授权
    • Static induction transistor
    • 静电感应晶体管
    • US4326209A
    • 1982-04-20
    • US86670
    • 1979-10-19
    • Jun-ichi NishizawaTakashi Yoshida
    • Jun-ichi NishizawaTakashi Yoshida
    • H01L29/772H01L29/80
    • H01L29/7722
    • A static induction transistor of the type wherein carriers are injected from a source to a drain across a potential barrier induced in a current channel and wherein the height of the potential barrier can be varied in response to a gate bias voltage applied to a gate and to a drain bias voltage applied to the drain to thereby control the magnitude of a drain current of the transistor. The product of the channel resistance R.sub.c and the true transconductance G.sub.m of the transistor is maintained less than one and the product of the true transconductance and the series resistance R.sub.s of the transistor is maintained greater than or equal to one in the low drain current region in the operative state of the transistor. The series resistance R.sub.s is the sum of a resistance of the source, a resistance from the source to the current channel, and the channel resistance from the entrance of the current channel to the position of maximum value (extrema point) of the potential barrier in the current channel. This static induction transistor has the advantage that the current-voltage characteristic curve is nearly linear over a very wide range of drain current including the low drain current region. In an upside-down structure, the above-mentioned conditions can be easily attained by selecting respective impurity concentrations and thicknesses of a substrate and an epitaxial layer grown thereon.
    • 一种静电感应晶体管,其中载流子从源极流到跨越在电流通道中感应的势垒的漏极,并且其中势垒的高度可以响应于施加到栅极的栅极偏置电压而变化,并且 施加到漏极的漏极偏置电压,从而控制晶体管的漏极电流的大小。 晶体管的沟道电阻Rc和真正跨导Gm的乘积保持小于1,并且晶体管的真正跨导和串联电阻Rs的乘积在低漏极电流区域中保持为大于或等于1的乘积 晶体管的工作状态。 串联电阻Rs是源极的电阻,源极到电流通道的电阻以及从当前通道的入口到位势的最大值(极值点)位置的通道电阻之和 当前渠道。 该静态感应晶体管的优点是电流 - 电压特性曲线在包括低漏极电流区域的非常宽的漏极电流范围内几乎是线性的。 在上下颠倒的结构中,通过选择基板和其上生长的外延层的各自的杂质浓度和厚度,可以容易地获得上述条件。
    • 68. 发明授权
    • Static induction transistor
    • 静电感应晶体管
    • US4199771A
    • 1980-04-22
    • US893537
    • 1978-04-04
    • Jun-Ichi NishizawaTakashi Yoshida
    • Jun-Ichi NishizawaTakashi Yoshida
    • H01L29/80H01L21/331H01L29/73H01L29/772H01L29/74
    • H01L29/7722
    • In a static induction transistor of the type wherein carriers are injected from a source region to a drain region across a potential barrier induced in a current channel, and wherein the height of the potential barrier can be varied in response to a gate bias voltage applied to a gate to thereby control the magnitude of a drain current of the transistor. The product of the channel resistance R.sub.c and the true transconductance (G.sub.m) of the transistor is maintained less than one and the product of the true transconductance and the series resistance R.sub.s of the transistor is maintained greater than or equal to one in the main operative state of the transistor. The series resistance R.sub.s is the sum of a resistance of the source, a resistance from the source to the current channel, and the channel resistance from the entrance of the current channel to the position of maximum value (extrema point) of the potential barrier in the current channel. This static induction transistor has the advantage that the current-voltage characteristic curve is nearly linear over a very wide range of drain current including the low drain current region.
    • 在这种类型的静态感应晶体管中,其中载流子从源区域注入跨越在电流通道中感应的势垒的漏极区,并且其中势垒的高度可以响应于施加到 栅极,从而控制晶体管的漏极电流的大小。 晶体管的沟道电阻Rc和真正跨导(Gm)的乘积保持小于1,并且晶体管的真正跨导和串联电阻Rs的乘积在主要工作状态下保持为大于或等于1 的晶体管。 串联电阻Rs是源极的电阻,源极到电流通道的电阻以及从当前通道的入口到位势的最大值(极值点)位置的通道电阻之和 当前渠道。 该静态感应晶体管的优点是电流 - 电压特性曲线在包括低漏极电流区域的非常宽的漏极电流范围内几乎是线性的。
    • 70. 发明授权
    • Color diffusion transfer photographic materials with vinyl copolymer
neutralization rate controlling layer
    • 彩色扩散转印照相材料与乙烯基共聚物中和率控制层
    • US4123275A
    • 1978-10-31
    • US708973
    • 1976-07-26
    • Yukio KarinoShinji SakaguchiTakashi Yoshida
    • Yukio KarinoShinji SakaguchiTakashi Yoshida
    • G03C8/54G03C7/00G03C1/40G03C5/54
    • G03C8/54
    • In a color diffusion transfer photographic material comprising a photosensitive element including at least one light-sensitive silver halide emulsion layer having a dye image providing material associated therewith, an image receiving element for fixing the diffusible dye formed from said dye image providing material to form a dye image, an alkaline processing composition capable of developing the exposed photosensitive element, and, if necessary, a hydrophilic colloid layer, the photographic material further having neutralizing means for reducing the pH of the alkaline processing composition. The stability of the transferred dye image formed in the image receiving element is improved by incorporating in the neutralization rate controlling layer of the neutralizing means a copolymer of a vinyl compound and an unsaturated monomer, said copolymer having the recurring structural unit represented by the general formula: ##STR1## wherein R represents a hydrogen atom, an aliphatic group having 1 to 10 carbon atoms, or an aryl group.
    • 在包含感光元件的彩色扩散转印照相材料中,所述感光元件包括至少一个具有与其相关的染料图像的感光卤化银乳剂层,用于固定由所述染料图像提供材料形成的可扩散染料的图像接收元件,以形成 染料图像,能够显影曝光的感光元件的碱性处理组合物,以及必要时的亲水胶体层,所述照相材料还具有用于降低碱性处理组合物的pH的中和装置。 通过在中和装置的中和速率控制层中加入乙烯基化合物和不饱和单体的共聚物,可以改善在图像接收元件中形成的转印染料图像的稳定性,所述共聚物具有由通式表示的重复结构单元 :其中R表示氢原子,碳原子数1〜10的脂肪族基或芳基。