专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明授权

US4111879A Composition for inhibiting adhesion of shellfish and algae 失效
标题翻译：用于抑制脂质和阿尔茨海绵胶粘剂的组合物
公开(公告)号：US4111879A
公开(公告)日：1978-09-05
申请号：US736339
申请日：1976-10-28
申请人： Kogoro Mori , Taro Izawa , Yoshifumi Mizuno , Sadayoshi Matsui
发明人： Kogoro Mori , Taro Izawa , Yoshifumi Mizuno , Sadayoshi Matsui
IPC分类号： A01N37/32 , C07D207/44 , C07D207/444 , C07D207/448 , C07D207/452 , C07D207/456 , C09D5/16 , C09D5/14
CPC分类号： C07D207/444 , C07D207/448 , C09D5/1625 , Y10S428/907
摘要： A composition for inhibiting an adhesion of shellfish and algae comprises a resin, a medium and a N-arylmaleimide having the formula ##STR1## wherein X represents hydrogen or halogen atom; Y.sub.1 represents hydrogen, or halogen atom or alkyl, lower alkoxy, nitro, hydroxyl, alkoxycarbonyl, carboxyl, phenyl, phenylamino, alkenyl, thiocyano, sulfone, acetylamino, or sulfamoyl group; Y.sub.2 represents hydrogen or halogen atom or alkyl, lower alkoxy, nitro or hydroxyl group and Y.sub.3 represents hydrogen or halogen atom or dialkylamino group.The inhibiting composition is coated on a fishing net, a ship bottom or other apparatus in water.

62. 发明授权

US4097426A Curing agents for polyurethane foams and elastomers and process of use 失效
标题翻译：聚氨酯泡沫和弹性体的固化剂和使用过程
公开(公告)号：US4097426A
公开(公告)日：1978-06-27
申请号：US735101
申请日：1976-10-26
申请人： Wataro Koike , Masami Takayama , Hideaki Ohashi , Sadayoshi Matsui
发明人： Wataro Koike , Masami Takayama , Hideaki Ohashi , Sadayoshi Matsui
IPC分类号： C08G18/00 , C08G18/10 , C08G18/38 , C08G18/54 , C08G18/65 , C08G18/14 , C08G18/32 , C09K3/00
CPC分类号： C08G18/3814 , C08G18/10
摘要： A curing agent for polyurethane which has a melting point at most 110.degree. C and comprises a mixture of at least two compounds of the general formula: ##STR1## Wherein n is zero or a positive integer. This curing agent has a low solidifying point and good solubility in solvents and thus is excellent in workability. This curing agent is used for the production of polyurethane highly stabilized in quality.
摘要翻译：聚氨酯固化剂，其熔点至多为110℃，并且包含至少两种通式为：其中n为0或正整数的化合物的混合物。

63. 发明授权

US4076721A Process for producing saccharin 失效
标题翻译：生产糖精的方法
公开(公告)号：US4076721A
公开(公告)日：1978-02-28
申请号：US677255
申请日：1976-04-15
申请人： Wataro Koike , Takahiro Kimoto , Sadayoshi Matsui
发明人： Wataro Koike , Takahiro Kimoto , Sadayoshi Matsui
IPC分类号： C07D275/06 , C07D327/04
CPC分类号： C07D275/06 , C07D327/04
摘要： An o-sulfobenzimide having the formula: ##STR1## is prepared by reacting phosgene with a methylbenzoate-o-sulfonate having the formula: ##STR2## WHEREIN M represents potassium or calcium, n is 1 when M is K and n is 2 when M is Ca, in an inert organic solvent in the presence of dimethylformamide; and then reacting ammonia with the reaction product.
摘要翻译：通过使光气与具有下式的（甲基）苯甲酸酯 - 邻磺酸酯反应制备具有下式的邻 - 磺基苯甲酰亚胺：（I）M代表钾或钙，当M为K时n为1，n为1时，n为 2当M为Ca时，在惰性有机溶剂中，在二甲基甲酰胺存在下，然后使氨与反应产物反应。

64. 发明授权

US06206969B1 Method and apparatus for fabricating semiconductor 失效
标题翻译：用于制造半导体的方法和装置
公开(公告)号：US06206969B1
公开(公告)日：2001-03-27
申请号：US08853863
申请日：1997-05-09
申请人： Kosei Takahashi , Sadayoshi Matsui
发明人： Kosei Takahashi , Sadayoshi Matsui
IPC分类号： C23C1600
CPC分类号： C30B23/02 , C23C14/564 , C23C14/566
摘要： A semiconductor fabrication apparatus for evaporating a material in a growth chamber by a molecular beam epitaxy technique to fabricate a semiconductor is provided. The apparatus includes: an ultra-high vacuum chamber including a liquid nitrogen cold trap therein, the ultra-high vacuum chamber being connected to the growth chamber via a valve; a first evacuation system including an ultra-high vacuum evacuation system, the first evacuation system being connected to the ultra-high vacuum chamber; and a second evacuation system including an evacuation system capable of conducting an evacuation operation even in a low vacuum condition, the second evacuation system being connected to the liquid nitrogen cold trap. The first evacuation system and the second evacuation system independently conduct the respective evacuation operations.
摘要翻译：提供了一种用于通过分子束外延技术蒸发生长室中的材料以制造半导体的半导体制造装置。该装置包括：超高真空室，其中包含液氮冷阱，超高真空室经由阀连接到生长室; 包括超高真空排气系统的第一抽空系统，所述第一抽空系统连接到所述超高真空室; 以及第二排气系统，其包括即使在低真空条件下能够进行排气操作的排气系统，所述第二抽空系统连接到所述液氮冷阱。第一疏散系统和第二疏散系统独立进行各自的撤离操作。

65. 发明授权

US5360762A Semiconductor laser device, and a method for producing a compound semiconductor device including the semiconductor laser device 失效
标题翻译：半导体激光器件以及包括半导体激光器件的化合物半导体器件的制造方法
公开(公告)号：US5360762A
公开(公告)日：1994-11-01
申请号：US080004
申请日：1993-06-21
申请人： Kosei Takahashi , Masahiro Hosoda , Atsuo Tsunoda , Takahiro Suyama , Sadayoshi Matsui
发明人： Kosei Takahashi , Masahiro Hosoda , Atsuo Tsunoda , Takahiro Suyama , Sadayoshi Matsui
IPC分类号： H01L21/20 , H01L21/205 , H01L31/105 , H01L31/18 , H01L33/00 , H01S5/042 , H01S5/20 , H01S5/223 , H01S5/32 , H01S5/323
CPC分类号： H01S5/32325 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02505 , H01L21/02546 , H01L21/02631 , H01L21/02658 , H01L31/105 , H01L31/1844 , H01L33/0062 , H01S5/2231 , H01S2304/02 , H01S5/0421 , H01S5/209 , H01S5/3211 , Y02E10/544 , Y02P70/521 , Y10S148/095
摘要： On a GaAs substrate (Al.sub.Y Ga.sub.1-Y).sub.0.5 In.sub.0.5 P crystal layers (0.ltoreq.Y.ltoreq.1) is formed to be lattice-matched with the substrate. By radiating As molecular beams on the surface of the crystal layers while heating the layered substrate to a temperature at which In in the crystal layers evaporates, the portion near the surface of the crystal layers is changed into an Al.sub.Y Ga.sub.1-Y As crystal layer (0.ltoreq.Y.ltoreq.1) of a thickness of several molecules, on which layer an Al.sub.X Ga.sub.1-X As crystal layer (0.ltoreq.X.ltoreq.1) is formed. Since the surface of the Al.sub.Y Ga.sub.1-Y As crystal layer has been purl fled, the formed Al.sub.X Ga.sub.1-X As crystal layer has a high crystallinity, allowing production of a light emitting diode, a semiconductor laser device and the like with high efficiency.
摘要翻译：在GaAs衬底（AlYGa1-Y）上，形成与衬底晶格匹配的0.5In0.5P晶体层（0≤Y≤1）。通过在层叠基板的加热的同时将As分子束照射到晶体层中的In蒸发的温度，将结晶层的表面附近的部分变更为AlYGa1-YAs晶体层（0 < / = Y <1），其上形成有AlXGa1-XAs晶体层（0≤X≤1）的几个分子的厚度。由于AlYGa1-YAs晶体层的表面已经被剥离，所形成的AlXGa1-XAs晶体层具有高结晶度，从而能够以高效率制造发光二极管，半导体激光器件等。

66. 发明授权

US4908830A Buried type semiconductor laser device 失效
标题翻译：埋式半导体激光器件
公开(公告)号：US4908830A
公开(公告)日：1990-03-13
申请号：US313982
申请日：1989-02-22
申请人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Hiroaki Kudo , Sadayoshi Matsui
发明人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Hiroaki Kudo , Sadayoshi Matsui
IPC分类号： H01S5/00 , H01S5/223 , H01S5/227 , H01S5/24
CPC分类号： H01S5/24 , H01S5/227 , H01S5/0035 , H01S5/2235 , H01S5/2237 , H01S5/2275
摘要： A buried type semiconductor laser device comprising a multi-layered epitaxial growth crystal including a striped laser-oscillation operating area on a semiconductor substrate, wherein said laser-oscillation operating area contains a buffer layer having the same polarity as said substrate, an active layer and a cladding layer having a polarity different from that of said substrate, said laser-oscillation operating area being sandwiched between one part of the burying layer and another part of the burying layer, which are disposed on said substrate and which have a polarity different from that of said substrate, through said substrate or a diffusion region having an impurity with the same polarity as said substrate so as to electrically isolate said burying layer from said cladding layer, thereby maintaining ineffective current flowing from said cladding layer to said burying layer at a low level even when current injected into said device is increased.

67. 发明授权

US4841534A Buried type semiconductor laser device 失效
标题翻译：埋式半导体激光器件
公开(公告)号：US4841534A
公开(公告)日：1989-06-20
申请号：US229212
申请日：1988-08-05
申请人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Hiroaki Kudo , Sadayoshi Matsui
发明人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Hiroaki Kudo , Sadayoshi Matsui
IPC分类号： H01S5/00 , H01S5/223 , H01S5/227 , H01S5/24
CPC分类号： H01S5/24 , H01S5/227 , H01S5/0035 , H01S5/2235 , H01S5/2237 , H01S5/2275
摘要： A buried type semiconductor laser device comprising a multi-layered epitaxial growth crystal including a striped laser-oscillation operating area on a semiconductor substrate, wherein said laser-oscillation operating area contains a buffer layer having the same polarity as said substrate, an active layer and a cladding layer having a polarity different from that of said substrate, said laser-oscillation operating area being sandwiched between one part of the burying layer and another part of the burying layer, which are disposed on said substrate and which have a polarity different from that of said substrate, through said substrate or a diffusion region having an impurity with the same polarity as said substrate so as to electrically isolate said burying layer from said cladding layer, thereby maintaining ineffective current flowing from said cladding layer to said burying layer at a low level even when current injected into said device is increased.

68. 发明授权

US4839900A Buried type semiconductor laser device 失效
标题翻译：埋式半导体激光器件
公开(公告)号：US4839900A
公开(公告)日：1989-06-13
申请号：US897337
申请日：1986-08-15
申请人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Hiroaki Kudo , Sadayoshi Matsui
发明人： Toshihiko Yoshida , Haruhisa Takiguchi , Shinji Kaneiwa , Hiroaki Kudo , Sadayoshi Matsui
IPC分类号： H01S5/00 , H01S5/223 , H01S5/227 , H01S5/24
CPC分类号： H01S5/24 , H01S5/227 , H01S5/0035 , H01S5/2235 , H01S5/2237 , H01S5/2275
摘要： A buried type semiconductor laser device comprising a multi-layered epitaxial growth crystal including a striped laser-oscillation operating area on a semiconductor substrate, wherein said laser-oscillation operating area contains a buffer layer having the same polarity as said substrate, an active layer and a cladding layer having a polarity different from that of said substrate, said laser-oscillation operating area being sandwiched between one part of the burying layer and another part of the burying layer, which are disposed on said substrate and which have a polarity different from that of said substrate, through said substrate or a diffusion region having an impurity with the same polarity as said substrate so as to electrically isolate said burying layer from said cladding layer, thereby maintaining ineffective current flowing from said cladding layer to said burying layer at a low level even when current injected into said device is increased.
摘要翻译：一种埋式半导体激光器件，包括在半导体衬底上包括条纹激光振荡操作区的多层外延生长晶体，其中所述激光振荡操作区域包含具有与所述衬底相同极性的缓冲层，活性层和具有与所述基板的极性不同的包覆层，所述激光振荡操作区域被夹在所述基板上并且具有与所述基板不同的极性不同的所述掩埋层的一部分与所述掩埋层的另一部分之间的所述衬底，通过所述衬底或具有与所述衬底具有相同极性的杂质的扩散区域，以将所述掩埋层与所述包层电隔离，从而保持无效电流从低覆盖层流到所述掩埋层即使当注入到所述装置中的电流增加时。

69. 发明授权

US4819240A Light modulator 失效
标题翻译：光调制器
公开(公告)号：US4819240A
公开(公告)日：1989-04-04
申请号：US180637
申请日：1988-04-07
申请人： Haruhisa Takiguchi , Shinji Kaneiwa , Toshihiko Yoshida , Sadayoshi Matsui
发明人： Haruhisa Takiguchi , Shinji Kaneiwa , Toshihiko Yoshida , Sadayoshi Matsui
IPC分类号： H04B10/61 , G11B7/1263 , G11B7/1267 , H01S5/06 , H01S5/062 , H01S5/065 , H04B10/00 , H04B10/07 , H04B10/2507 , H04B10/516 , H01S3/10
CPC分类号： H01S5/06213 , H01S5/06223 , H01S5/0658
摘要： A light modulator for modulating data signal to high frequency light signal includes a semiconductor laser diode having an input for receiving the data signal and an output for producing a laser beam, a light detector for receiving the laser beam and producing an electric signal representing the laser beam, and an electric passage between the light detector and the input of the semiconductor laser diode so as to define a positive feedback circuit for feeding the output of the semiconductor laser diode to the input of the same, whereby an oscillation at a resonance frequency is effected in the semiconductor laser diode to generate a light modulated high frequency laser signal from the semiconductor laser diode.
摘要翻译：用于将数据信号调制为高频光信号的光调制器包括具有用于接收数据信号的输入端和用于产生激光束的输出的半导体激光二极管，用于接收激光束的光检测器，并产生表示激光的电信号光束和光检测器与半导体激光二极管的输入之间的电通路，以便限定用于将半导体激光二极管的输出馈送到其输入端的正反馈电路，由此谐振频率的振荡为在半导体激光二极管中产生来自半导体激光二极管的光调制高频激光信号。

70. 发明授权

US4806778A Micro-displacement measuring apparatus using a semiconductor laser 失效
标题翻译：使用半导体激光器的微位移测量装置
公开(公告)号：US4806778A
公开(公告)日：1989-02-21
申请号：US832885
申请日：1986-02-26
申请人： Osamu Yamamoto , Hiroshi Hayashi , Sadayoshi Matsui , Haruhisa Takiguchi , Nobuyuki Miyauchi
发明人： Osamu Yamamoto , Hiroshi Hayashi , Sadayoshi Matsui , Haruhisa Takiguchi , Nobuyuki Miyauchi
IPC分类号： G01D5/30 , G01B9/02 , G01B11/00 , G01D5/26 , H01S3/08
CPC分类号： G01D5/26
摘要： A micro-displacement measuring apparatus using a semiconductor laser, comprises a compound resonator system containing the semiconductor laser, and a light detector receiving a light from said semiconductor laser. The compound resonator system is constructed such that a light from the semiconductor laser irradiates an object to be measured and the reflected light therefrom returns to the semiconductor laser, wherein the relationship between the reflectivity R.sub.f at the front facet of the semiconductor laser from which a laser light irradiates the object, and the reflectivity Rr at the rear facet of the semiconductor laser which is opposite the front facet is as follows: 0.1
摘要翻译：使用半导体激光器的微位移测量装置包括包含半导体激光器的复合谐振器系统和接收来自所述半导体激光器的光的光检测器。复合谐振器系统被构造成使得来自半导体激光器的光照射被测量物体并且其反射光返回到半导体激光器，其中激光器的半导体激光器的前面的反射率Rf之间的关系光照射物体，与前面相反的半导体激光器的后面的反射率Rr如下：0.1

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式