专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明申请

US20120011900A1 LAUNDRY MACHINE 审中-公开
标题翻译：洗衣机
公开(公告)号：US20120011900A1
公开(公告)日：2012-01-19
申请号：US13258965
申请日：2010-05-27
申请人： Ig Geun Kwon , Young Suk Kim , Hyun Seok Seo , Min Gyu Jo
发明人： Ig Geun Kwon , Young Suk Kim , Hyun Seok Seo , Min Gyu Jo
IPC分类号： D06F21/04 , D06F37/22
CPC分类号： D06F37/20 , D06F37/22 , D06F37/268 , D06F37/269 , F16F1/3732 , F16F1/38
摘要： The present invention relates to a laundry machine having an improved supporting structure of a damper for supporting a tub (200), including a tub (200) for holding washing water, a drum (400) rotatably mounted in the tub (200), vibration means for attenuating vibration transmitted from the drum (400), and a bushing (1130) disposed between a base (110) and the vibration attenuation means in a compressed and deformed state for restricting movement of one end of the vibration attenuation means.
摘要翻译：洗衣机技术领域本发明涉及一种具有改进的用于支撑桶（200）的阻尼器的支撑结构的洗衣机，其包括用于保持洗涤水的桶（200），可旋转地安装在桶（200）中的鼓（400），振动用于衰减从鼓（400）传递的振动的装置，以及设置在基座（110）和减振装置之间的压缩和变形状态的衬套（1130），用于限制振动衰减装置的一端的运动。

62. 发明申请

US20120009750A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120009750A1
公开(公告)日：2012-01-12
申请号：US13240303
申请日：2011-09-22
申请人： Yosuke Shimamune , Masahiro Fukuda , Young Suk Kim , Akira Katakami , Akiyoshi Hatada , Naoyoshi Tamura , Hiroyuki Ohta
发明人： Yosuke Shimamune , Masahiro Fukuda , Young Suk Kim , Akira Katakami , Akiyoshi Hatada , Naoyoshi Tamura , Hiroyuki Ohta
IPC分类号： H01L21/336
CPC分类号： H01L29/7848 , H01L29/165 , H01L29/665 , H01L29/6653 , H01L29/6659 , H01L29/66636 , H01L29/7833
摘要： A first p-type SiGe mixed crystal layer is formed by an epitaxial growth method in a trench, and a second p-type SiGe mixed crystal layer is formed. On the second SiGe mixed crystal layer, a third p-type SiGe mixed crystal layer is formed. The height of an uppermost surface of the first SiGe mixed crystal layer from the bottom of the trench is lower than the depth of the trench with the surface of the silicon substrate being the standard. The height of an uppermost surface of the second SiGe mixed crystal layer from the bottom of the trench is higher than the depth of the trench with the surface of the silicon substrate being the standard. Ge concentrations in the first and third SiGe mixed crystal layers are lower than a Ge concentration in the second SiGe mixed crystal layer.
摘要翻译：在沟槽中通过外延生长法形成第一p型SiGe混晶层，形成第二p型SiGe混晶层。在第二SiGe混晶层上形成第三p型SiGe混晶层。从沟槽底部开始的第一SiGe混合晶体层的最上表面的高度低于沟槽的深度，硅衬底的表面是标准的。从沟槽底部开始的第二SiGe混合晶体层的最上表面的高度高于沟槽的深度，硅衬底的表面是标准的。第一和第三SiGe混晶层中的Ge浓度低于第二SiGe混晶层中的Ge浓度。

63. 发明授权

US08068067B2 Antenna integrally formed with case and method of manufacturing the same 有权
标题翻译：天线一体形成，壳体及其制造方法
公开(公告)号：US08068067B2
公开(公告)日：2011-11-29
申请号：US12183883
申请日：2008-07-31
申请人： Ha Ryong Hong , Young Suk Kim , Dae Seong Jeon , Jae Suk Sung
发明人： Ha Ryong Hong , Young Suk Kim , Dae Seong Jeon , Jae Suk Sung
IPC分类号： H01Q1/24 , H01Q1/40
CPC分类号： H01Q1/40 , H01Q1/1207 , Y10T29/49016
摘要： There are provided an antenna integrally formed with a case and a method of manufacturing the same. An antenna integrally formed with a case according to an aspect of the invention includes: a case unit formed of a dielectric material; a radiator integrally formed with the case unit and having terminal units extending from a radiation unit tightly contacting the surface of the case unit; vertical ribs each having an internal connection portion contacting an upper end of the terminal unit and extending downward from an inner surface of the case unit by a predetermined length; and outer connection portions provided on a board disposed adjacent to the case unit and electrically connected to individual lower ends of the internal connection portions.
摘要翻译：设置有与壳体一体形成的天线及其制造方法。根据本发明的一个方面的与壳体整体形成的天线包括：由介电材料形成的壳体单元; 与所述壳体单元一体形成的散热器，具有从与所述壳体单元的表面紧密接触的辐射单元延伸的端子单元; 每个纵向肋具有接触终端单元的上端并从壳单元的内表面向下延伸预定长度的内部连接部分; 以及外部连接部，其设置在与壳体单元相邻设置的板上，并且电连接到内部连接部的各个下端。

64. 发明授权

US07848166B2 Circuit and method for a Vdd level memory sense amplifier 有权
标题翻译：用于Vdd级存储器读出放大器的电路和方法
公开(公告)号：US07848166B2
公开(公告)日：2010-12-07
申请号：US12046276
申请日：2008-03-11
申请人： Kuoyuan Peter Hsu , Young Suk Kim , Bing Wang , Ming Chieh Huang
发明人： Kuoyuan Peter Hsu , Young Suk Kim , Bing Wang , Ming Chieh Huang
IPC分类号： G11C7/08 , G11C7/12
CPC分类号： G11C11/4091 , G11C7/08 , G11C7/12 , G11C11/4094 , G11C11/4097
摘要： A circuit and method for a sense amplifier for sensing the charge stored by a memory cell is disclosed. The memory cell is coupled to a bit line, a complementary bit line and a differential sense amplifier is coupled to the bit line and the complementary bit line. A control signal couples a reference voltage to the complementary bit line. A positive precharge voltage is applied to the bit line and complementary bit line prior to the sense amplifier being enabled. The memory cell outputs a voltage to the bit line responsive to a word line, and the sense amplifier senses the differential voltage between the bit line and the complementary bit line responsive to a sense enable signal. A voltage regulator for generating the reference voltage, preferably about 80% of a positive supply voltage, is disclosed. A method of sensing data stored by a memory cell is disclosed.
摘要翻译：公开了一种用于感测由存储器单元存储的电荷的读出放大器的电路和方法。存储单元耦合到位线，互补位线和差分读出放大器耦合到位线和互补位线。控制信号将参考电压耦合到互补位线。在读出放大器使能之前，将正预充电电压施加到位线和互补位线。存储单元响应于字线向位线输出电压，并且感测放大器响应于感测使能信号来感测位线和互补位线之间的差分电压。公开了用于产生参考电压的电压调节器，优选地为正电源电压的约80％。公开了一种感测由存储器单元存储的数据的方法。

65. 发明申请

US20100015774A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100015774A1
公开(公告)日：2010-01-21
申请号：US12564313
申请日：2009-09-22
申请人： Yosuke SHIMAMUNE , Masahiro Fukuda , Young Suk Kim , Akira Katakami , Akiyoshi Hatada , Naoyoshi Tamura , Hiroyuki Ohta
发明人： Yosuke SHIMAMUNE , Masahiro Fukuda , Young Suk Kim , Akira Katakami , Akiyoshi Hatada , Naoyoshi Tamura , Hiroyuki Ohta
IPC分类号： H01L21/336
CPC分类号： H01L29/7848 , H01L29/165 , H01L29/665 , H01L29/6653 , H01L29/6659 , H01L29/66636 , H01L29/7833
摘要： A first p-type SiGe mixed crystal layer is formed by an epitaxial growth method in a trench, and a second p-type SiGe mixed crystal layer is formed. On the second SiGe mixed crystal layer, a third p-type SiGe mixed crystal layer is formed. The height of an uppermost surface of the first SiGe mixed crystal layer from the bottom of the trench is lower than the depth of the trench with the surface of the silicon substrate being the standard. The height of an uppermost surface of the second SiGe mixed crystal layer from the bottom of the trench is higher than the depth of the trench with the surface of the silicon substrate being the standard. Ge concentrations in the first and third SiGe mixed crystal layers are lower than a Ge concentration in the second SiGe mixed crystal layer.
摘要翻译：在沟槽中通过外延生长法形成第一p型SiGe混晶层，形成第二p型SiGe混晶层。在第二SiGe混晶层上形成第三p型SiGe混晶层。从沟槽底部开始的第一SiGe混合晶体层的最上表面的高度低于沟槽的深度，硅衬底的表面是标准的。从沟槽底部开始的第二SiGe混合晶体层的最上表面的高度高于沟槽的深度，硅衬底的表面是标准的。第一和第三SiGe混晶层中的Ge浓度低于第二SiGe混晶层中的Ge浓度。

66. 发明申请

US20100000467A1 Liquid crystal drop apparatus and method for dropping liquid crystal using the same 有权
标题翻译：液晶滴落装置及使用其的液晶滴落方法
公开(公告)号：US20100000467A1
公开(公告)日：2010-01-07
申请号：US12585331
申请日：2009-09-11
申请人： Young Suk Kim
发明人： Young Suk Kim
IPC分类号： B05C5/00
CPC分类号： G02F1/1341 , G02F2001/13415 , Y10T428/10
摘要： A liquid crystal drop apparatus for dropping liquid crystal on a substrate includes a liquid crystal container filled with liquid crystal, a nozzle formed at an lower end of the liquid crystal container for dropping the liquid crystal of the liquid crystal container, and a control unit for controlling the nozzle when the nozzle drops the liquid crystal.
摘要翻译：用于将液晶滴落在基板上的液晶滴落装置包括：充满液晶的液晶容器，形成在用于使液晶容器的液晶滴下的液晶容器的下端的喷嘴;以及控制单元，当喷嘴下降液晶时控制喷嘴。

67. 发明授权

US07407860B2 Method of fabricating a complementary semiconductor device having a strained channel p-transistor 有权
标题翻译：制造具有应变通道p型晶体管的互补半导体器件的方法
公开(公告)号：US07407860B2
公开(公告)日：2008-08-05
申请号：US11098567
申请日：2005-04-05
申请人： Young Suk Kim , Toshifumi Mori
发明人： Young Suk Kim , Toshifumi Mori
IPC分类号： H01L21/336 , H01L21/76
CPC分类号： H01L29/7842 , H01L21/823807 , H01L21/823814 , H01L29/1083 , H01L29/165 , H01L29/665 , H01L29/6653 , H01L29/6656 , H01L29/66628 , H01L29/66636 , H01L29/7848
摘要： Compression stress applying portions 20 of SiGe film are formed in the source/drain regions of the p-MOSA region 30a. Then, impurities are implanted in the p-MOS region 30a and the n-MOS region 30b to form shallow junction regions 22a, 22b and deep junction regions 23a, 23b. The impurity in the shallow junction regions 22a, 22b is prevented from being diffused immediately below the gate insulation film 15 by the thermal processing in forming the SiGe film, the short channel effect is prevented, and the hole mobility of the channel region of the p-MOS transistor 14a. The operation speed of the p-MOS transistor 13a is balanced with that of the n-MOS transistor, whereby the operation speed of the complementary semiconductor device 10 can be increased. The semiconductor device fabricating method can increase and balance the operation speed of a p-transistor with that of an n-transistor.
摘要翻译：在p-MOSA区域30a的源极/漏极区域中形成SiGe膜的压应力施加部分20。然后，在p-MOS区域30a和n-MOS区域30b中注入杂质以形成浅结区域22a，22b和深结区域23a，23b。通过在形成SiGe膜中的热处理，防止浅结区域22a，22b中的杂质在栅极绝缘膜15的正下方扩散，防止短沟道效应，并且沟道区域的空穴迁移率 p-MOS晶体管14a。 p-MOS晶体管13a的工作速度与n-MOS晶体管的操作速度平衡，可以提高互补半导体器件10的工作速度。半导体器件制造方法可以增加并平衡p型晶体管与n型晶体管的工作速度。

68. 发明申请

US20070251023A1 Drum type washing machine and method for controlling the same 审中-公开
标题翻译：滚筒式洗衣机及其控制方法
公开(公告)号：US20070251023A1
公开(公告)日：2007-11-01
申请号：US11790577
申请日：2007-04-26
申请人： Bon Kwon Koo , Jin Woong Kim , Young Suk Kim
发明人： Bon Kwon Koo , Jin Woong Kim , Young Suk Kim
IPC分类号： D06F33/00 , D06F23/00 , D06F35/00
CPC分类号： D06F37/10 , D06F37/302 , D06F37/42
摘要： A drum type washing machine has an access hole and a drum door for closing the access hole provided on the cylindrical sidewall of the drum. The enclosure of the washing machine includes an access opening that aligns with the assess hole of the drum. A motor of the washing machine is coupled to both the drum door and the drum itself. Thus, the motor can be used to rotate the drum and the door during washing operations. A clutch unit selectively couples and decouples the motor from the drum so that the drum door can be rotated with respect to the drum to open and close the access hole of the drum.
摘要翻译：滚筒式洗衣机具有进入孔和鼓门，用于封闭设置在滚筒的圆筒形侧壁上的进入孔。洗衣机的外壳包括与滚筒的评估孔对准的进入开口。洗衣机的电动机联接到鼓门和鼓本身。因此，电动机可用于在洗涤操作期间旋转鼓和门。离合器单元选择性地将电动机与鼓相耦合和解耦，使得鼓门能够相对于滚筒旋转以打开和关闭滚筒的进入孔。

69. 发明授权

US07166516B2 Method for fabricating a semiconductor device including the use of a compound containing silicon and nitrogen to form an insulation film of SiN or SiCN 有权
标题翻译：一种制造半导体器件的方法，包括使用含有硅和氮的化合物以形成SiN或SiCN的绝缘膜
公开(公告)号：US07166516B2
公开(公告)日：2007-01-23
申请号：US10696775
申请日：2003-10-30
申请人： Masayuki Furuhashi , Toshifumi Mori , Young Suk Kim , Takayuki Ohba , Ryou Nakamura
发明人： Masayuki Furuhashi , Toshifumi Mori , Young Suk Kim , Takayuki Ohba , Ryou Nakamura
IPC分类号： H01L21/471 , C23C16/34 , C23C16/36
CPC分类号： H01L21/823814 , H01L21/823842
摘要： The semiconductor device fabrication method comprises the step of forming gate electrode 20 on a semiconductor substrate 10 with a gate insulation film 18 formed therebetween; the step of implanting dopants in the semiconductor substrate 10 with the gate electrode 20 as the mask to form dopant diffused regions 28, 36; the step of forming a silicon oxide film 38 on the semiconductor substrate 10, covering the gate electrodes 20; anisotropically etching the silicon oxide film 38 to form sidewall spacers 42 including the silicon oxide film 38 on the side walls of the gate electrode 20. In the step of forming a silicon oxide film 38, the silicon oxide film 38 is formed by thermal CVD at a 500–580° C. film forming temperature, using bis(tertiary-butylamino)silane and oxygen as raw materials. Silicon oxide film 38 is formed at a relatively low film forming temperature, whereby the diffusion of the dopant in the doapnt diffused regions 28, 36 forming the shallow region of the extension source/drain structure can be suppressed.
摘要翻译：半导体器件制造方法包括在半导体衬底10上形成栅电极20的步骤，其间形成有栅极绝缘膜18; 以栅电极20为掩模，在半导体衬底10中注入掺杂剂以形成掺杂剂扩散区域28,36的步骤; 在半导体衬底10上形成覆盖栅电极20的氧化硅膜38的步骤; 各向异性地蚀刻氧化硅膜38以在栅电极20的侧壁上形成包括氧化硅膜38的侧壁间隔物42。在形成氧化硅膜38的步骤中，使用双（叔丁基氨基）硅烷和氧气作为原料，通过热CVD在500-580℃成膜温度下形成氧化硅膜38。在相对较低的成膜温度下形成氧化硅膜38，由此可以抑制形成扩展源极/漏极结构的浅区域的多个扩散区域28,36中的掺杂剂的扩散。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式