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    • 66. 发明授权
    • Display device, driving method thereof, and element substrate
    • 显示装置及其驱动方法以及元件基板
    • US07683860B2
    • 2010-03-23
    • US10999176
    • 2004-11-30
    • Shou NagaoHajime KimuraAya AnzaiYu YamazakiMitsuaki OsameYoshifumi Tanada
    • Shou NagaoHajime KimuraAya AnzaiYu YamazakiMitsuaki OsameYoshifumi Tanada
    • G09G3/30
    • G09G3/32G09G3/2022G09G2300/0809G09G2300/0842G09G2310/0251G09G2310/0256G09G2310/0267G09G2310/0275G09G2320/043G09G2330/08H01L27/3244H01L2251/5323
    • The invention provides a display device with high image quality and high definition, a driving method thereof and an element substrate. Further, the invention provides a display device with improved degradation of a light emitting element, a driving method thereof and an element substrate. The display device of the invention has a first transistor, a second transistor, a third transistor, a light emitting element, a source driver, a first gate driver, and a second gate driver. A gate electrode of the first transistor is connected to a gate line, one of a source electrode and a drain electrode thereof is connected to a source line and the other is connected to a gate electrode of the third transistor. The light emitting element, the second transistor and the third transistor are connected in series between a first power source and a second power source. A gate electrode of the second transistor is connected to a third power source, the source driver is connected to the source line, and the first gate driver and the second gate driver are connected to the gate line.
    • 本发明提供了具有高图像质量和高清晰度的显示装置,其驱动方法和元件基板。 此外,本发明提供一种具有改善的发光元件劣化的显示装置,其驱动方法和元件基板。 本发明的显示装置具有第一晶体管,第二晶体管,第三晶体管,发光元件,源极驱动器,第一栅极驱动器和第二栅极驱动器。 第一晶体管的栅电极连接到栅极线,源极和漏极之一连接到源极线,而另一个连接到第三晶体管的栅电极。 发光元件,第二晶体管和第三晶体管串联连接在第一电源和第二电源之间。 第二晶体管的栅电极连接到第三电源,源极驱动器连接到源极线,第一栅极驱动器和第二栅极驱动器连接到栅极线。
    • 69. 发明授权
    • Verification method for nonvolatile semiconductor memory device
    • 非易失性半导体存储器件的验证方法
    • US07760552B2
    • 2010-07-20
    • US11729216
    • 2007-03-28
    • Hiroyuki MiyakeMitsuaki OsameAya Miyazaki
    • Hiroyuki MiyakeMitsuaki OsameAya Miyazaki
    • G11C11/34
    • G11C16/3436G11C16/26
    • The present invention provides nonvolatile semiconductor memory devices which operate with low power consumption. In a nonvolatile semiconductor memory device, a plurality of nonvolatile memory elements are connected in series. The plurality of nonvolatile memory elements include a semiconductor layer including a channel forming region and a control gate provided to overlap with the channel forming region. Operations of write, erase, a first read, and a second read in a verify operation of data to the nonvolatile memory elements, are conducted by changing voltage to the control gates of the nonvolatile memory elements. The second read in the verify operation after erase operation is conducted by changing only one of a potential of the control gate of a nonvolatile memory element which are selected from the plurality of nonvolatile memory elements, and as the potential, a potential different from a potential of the first read is used.
    • 本发明提供了以低功耗工作的非易失性半导体存储器件。 在非易失性半导体存储器件中,多个非易失性存储器元件串联连接。 多个非易失性存储元件包括包括沟道形成区域的半导体层和设置成与沟道形成区域重叠的控制栅极。 通过将电压改变为非易失性存储器元件的控制栅极来进行对非易失性存储器元件的数据的验证操作的写入,擦除,第一读取和第二次读取操作。 在擦除操作之后的验证操作中的第二次读取是通过仅改变从多个非易失性存储元件中选择的非易失性存储元件的控制栅极的电位中的一个,并且作为电势,与电位不同的电位 的第一次读取被使用。