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    • 62. 发明授权
    • Method of manufacturing bipolar transistor with reduced numbers of steps
without increasing collector resistance
    • 制造双极晶体管的方法,减少步数而不增加集电极电阻
    • US5516709A
    • 1996-05-14
    • US346163
    • 1994-11-21
    • Toru Yamazaki
    • Toru Yamazaki
    • H01L29/73H01L21/331H01L21/8222H01L21/8249H01L29/08H01L29/732H01L21/265
    • H01L29/66272H01L21/8222H01L21/8249H01L29/0821H01L29/7322Y10S148/01Y10S148/011Y10S148/124
    • A method of manufacturing a bipolar transistor including the steps of doping an impurity of the one conductivity type in a major surface portion of the semiconductor substrate to form a buried layer of the one conductivity type and growing an epitaxial layer on an entire surface on a major surface of the semiconductor substrate, forming a diffusion region of the opposite conductivity type in an emitter formation region on the major surface of the semiconductor substrate and forming a base connecting region in a base formation region to be in contact with the diffusion region of the opposite conductivity type, forming an insulating interlayer on the major surface of the semiconductor substrate including the diffusion region of the opposite conductivity type and the base connecting region, forming an emitter electrode layer contact hole reaching the diffusion region of the opposite conductivity type in an emitter formation region of the insulating interlayer and forming a collector region hole reaching the epitaxial layer in a collector formation region of the insulating interlayer, depositing a polysilicon film on the insulating interlayer and in the emitter electrode layer contact hole and the collector region hole, forming a patterning mask on the polysilicon film in the emitter formation region, patterning the patterning mask to leave a polysilicon film serving as an emitter electrode layer, and, at the same time, removing the epitaxial layer in the collector formation region by etching to form a collector groove.
    • 一种制造双极晶体管的方法,包括以下步骤:在半导体衬底的主表面部分掺杂一种导电类型的杂质,以形成一种导电类型的掩埋层,并在主体的整个表面上生长外延层 在半导体衬底的主表面上的发射体形成区域中形成相反导电类型的扩散区域,并在基底形成区域中形成与相对的扩散区域接触的基极连接区域 导电类型,在包括相反导电类型的扩散区域和基极连接区域的半导体衬底的主表面上形成绝缘中间层,在发射极形成中形成达到相反导电类型的扩散区域的发射极电极层接触孔 绝缘夹层的区域并形成收集器区域 n绝缘层到达绝缘层的集电极形成区域中的外延层,在绝缘中间层和发射极电极层接触孔和集电极区孔中沉积多晶硅膜,在发射极形成中的多晶硅膜上形成图案化掩模 区域,图案化图案掩模以留下用作发射极电极层的多晶硅膜,同时通过蚀刻去除集电极形成区域中的外延层以形成集电槽。
    • 63. 发明授权
    • Heterojunction bipolar transistor
    • 异质结双极晶体管
    • US5302841A
    • 1994-04-12
    • US800063
    • 1991-11-27
    • Toru Yamazaki
    • Toru Yamazaki
    • H01L29/73H01L21/331H01L29/165H01L29/737H01L31/072H01L29/06H01L31/109
    • H01L29/7378
    • A Si heterojunction bipolar transistor having a SiGe narrow gap base is disclosed, in which the Ge content in the base region is higher in the neighborhood of the base-emitter junction and also in the neighborhood of the base-collector junction as compared to a central portion of the base region, and also in which the Ge concentration distribution in the base region has a slope toward the central portion from the base-emitter and the base-collector region. The Ge content in the neighborhood of the emitter-base junction can be increased up to 30 to 40%, and the emitter-base junction diffusion potential can be greatly reduced. Further, the average Ge content can be held low owing to the slope of the Ge concentration distribution, thus ensuring freedom from dislocation.
    • 公开了具有SiGe窄间隙基极的Si异质结双极晶体管,其中基极区域中的Ge含量在基极 - 发射极结附近以及在基极 - 集电极结附近与中心相比较高 基底区域中的Ge浓度分布与基极 - 发射极和基极 - 集电极区域之间的中心部分具有斜率。 发射极 - 基极结附近的Ge含量可以提高到30至40%,并且可以大大降低发射极 - 基极结扩散电位。 此外,由于Ge浓度分布的斜率,平均Ge含量可以保持较低,因此确保无位错。
    • 68. 发明授权
    • Continuous separation of fructose from a mixture of sugars
    • 从糖的混合物中连续分离果糖
    • US4157267A
    • 1979-06-05
    • US826640
    • 1977-08-22
    • Hiroyuki OdawaraMasaji OhnoToru YamazakiMasazumi Kanaoka
    • Hiroyuki OdawaraMasaji OhnoToru YamazakiMasazumi Kanaoka
    • C13K1/00C07H1/06C13K11/00C13K13/00C13K3/00
    • C13K11/00C13K13/007
    • A process for continuously separating, in liquid phase, fructose from a liquid feed mixture of sugars containing essentially fructose and glucose by contact with a solid sorbent of zeolite. The process utilizes a simulated countercurrent flow system wherein a liquid stream flows through serially and circularly interconnected desorption, rectification and sorption zones each zone being divided into a plurality of sections. In the zones water as desorbent is introduced into the desorption zone, the liquid feed mixture of sugars is introduced into the sorption zone, a desorption effluent is withdrawn from the desorption zone and a raffinate effluent is withdrawn from the sorption zone, and all of the points of introduction and withdrawal of the liquids are simultaneously shifted, one section at a time at predetermined intervals of time, in a downstream direction.
    • 通过与沸石的固体吸附剂接触,从液相中连续分离含有基本上含有果糖和葡萄糖的糖的液体进料混合物中的果糖的方法。 该方法利用模拟逆流流动系统,其中液体流通过串联和圆形互连的解吸,精馏和吸附区域流动,每个区域被分成多个区段。 在这些区域中,作为解吸剂的水被引入解吸区域中,将糖的液体进料混合物引入吸附区,解吸流出物从解吸区中排出,并且从吸附区抽出残液流出物, 液体的引导点和抽出点在下游方向上以预定的时间间隔一次同时移动。