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61. 发明授权

US06345399B1 Hard mask process to prevent surface roughness for selective dielectric etching 失效
标题翻译：硬掩模工艺，以防止表面粗糙度进行选择性电介质蚀刻
公开(公告)号：US06345399B1
公开(公告)日：2002-02-12
申请号：US09671408
申请日：2000-09-27
申请人： Paul C. Jamison , Tina Wagner , Richard S. Wise , Hongwen Yan
发明人： Paul C. Jamison , Tina Wagner , Richard S. Wise , Hongwen Yan
IPC分类号： H01L21311
CPC分类号： H01L21/0332 , H01L21/3081 , Y10S388/934
摘要： The propagation of microfissures from a photoresist to an underlying material layer during lithography and etching can be substantially prevented by placing a hard mask between the photoresist and the material layer to be etched. Specifically, the microfissure propagation is substantially prevented by (a) forming a compressive hard mask on a surface of a non-compressive material layer that is to be patterned by lithography and etching; (b) forming a patterned photoresist on said hard mask, wherein a portion of said hard mask is exposed; (c) removing said exposed portion of said hard mask so as to expose a portion of said non-compressive material layer; and (d) transferring said pattern from said patterned photoresist to said exposed portion of said material layer by etching, wherein said hard mask is selective to said etching and thus substantially prevents the propagation of photoresist microfissures to said material layer.
摘要翻译：通过在光致抗蚀剂和待蚀刻的材料层之间放置硬掩模，可以显着地防止在光刻和蚀刻期间从光致抗蚀剂到下层材料层的微结构的传播。具体地说，通过（a）在通过光刻和蚀刻被图案化的非压缩材料层的表面上形成压缩硬掩模，基本上防止了微裂纹传播; （b）在所述硬掩模上形成图案化的光致抗蚀剂，其中暴露所述硬掩模的一部分; （c）去除所述硬掩模的所述暴露部分以暴露所述非压缩材料层的一部分; 以及（d）通过蚀刻将所述图案从所述图案化的光致抗蚀剂转移到所述材料层的所述暴露部分，其中所述硬掩模对所述蚀刻具有选择性，因此基本上防止光致抗蚀剂微裂纹向所述材料层的传播。

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