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61. 发明授权

US08234446B2 Disk array apparatus, data distribution and management method, and data distribution and management program 有权
标题翻译：磁盘阵列设备，数据分发和管理方法，数据分发与管理程序
公开(公告)号：US08234446B2
公开(公告)日：2012-07-31
申请号：US12636268
申请日：2009-12-11
申请人： Yasuo Noguchi , Kazutaka Ogihara , Masahisa Tamura , Yoshihiro Tsuchiya , Tetsutaro Maruyama , Takashi Watanabe , Tatsuo Kumano , Kazuichi Oe
发明人： Yasuo Noguchi , Kazutaka Ogihara , Masahisa Tamura , Yoshihiro Tsuchiya , Tetsutaro Maruyama , Takashi Watanabe , Tatsuo Kumano , Kazuichi Oe
IPC分类号： G06F12/00
CPC分类号： G06F11/1076 , G06F2211/104
摘要： A parity-data generating unit generates, in response to a write request containing update data, updated parity data in the parity group to which the update data belongs. A time-series-information generating unit generates time-series information indicating an anteroposterior relationship during writing between the update data and existing data stored in the unit storage area to which the update data is to be written. A time-series-information adding unit adds the time-series information, generated in response to the write request, to the update data as certification time-series information and that adds comparison time-series information to the updated parity data in association with the update data, the comparison time-series information having the same value as the certification time-series information. A writing unit distributes and writes, to the multiple storage devices, the update data to which the certification time-series information is added and the updated parity data to which the comparison time-series information is added.
摘要翻译：奇偶校验数据生成单元响应于包含更新数据的写入请求，生成更新数据所属的奇偶校验组中的更新奇偶校验数据。时间序列信息生成单元生成指示更新数据与存储在更新数据要被写入的单位存储区域中的现有数据之间的写入期间的前后关系的时间序列信息。时间序列信息添加单元将作为响应于写入请求生成的时间序列信息添加到作为认证时间序列信息的更新数据，并且将比较时间序列信息与更新的奇偶校验数据相关联地将比较时间序列信息与更新数据，比较时间序列信息具有与认证时间序列信息相同的值。写入单元向多个存储设备分发并添加添加有认证时间序列信息的更新数据和添加了比较时间序列信息的更新的奇偶校验数据。

62. 发明授权

US08194364B2 Magnetoresistive effect element in CPP-type structure including ferromagnetic layer configured with CoFe system alloy and magnetic disk device therewith 有权
标题翻译： CPP型结构中的磁阻效应元件，包括配置有CoFe系合金的铁磁层及其磁盘装置
公开(公告)号：US08194364B2
公开(公告)日：2012-06-05
申请号：US12461972
申请日：2009-08-31
申请人： Shinji Hara , Tsutomu Chou , Yoshihiro Tsuchiya , Hironobu Matsuzawa
发明人： Shinji Hara , Tsutomu Chou , Yoshihiro Tsuchiya , Hironobu Matsuzawa
IPC分类号： G11B5/33
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , H01L43/08 , H01L43/10
摘要： In an MR element of the present invention, an effect of an extremely-high MR ratio is obtained since a crystal structure of a CoFe magnetic layer in the vicinity of an interface with a spacer layer is formed as a close packed structure, such as an hcp structure and an fcc structure, and a total existing ratio of these crystal structures is 25% or more by an area ratio.
摘要翻译：在本发明的MR元件中，由于在与间隔层的界面附近的CoFe磁性层的晶体结构形成为紧密堆积结构，所以获得了极高的MR比的效果，例如 hcp结构和fcc结构，并且这些晶体结构的总存在比例通过面积比为25％以上。

63. 发明申请

US20120137086A1 NON-TRANSITORY MEDIUM, ACCESS CONTROL METHOD, AND INFORMATION PROCESSING APPARATUS 有权
标题翻译：非传输介质，访问控制方法和信息处理设备
公开(公告)号：US20120137086A1
公开(公告)日：2012-05-31
申请号：US13217552
申请日：2011-08-25
申请人： Kazuichi OE , Tatsuo Kumano , Yasuo Noguchi , Kazutaka Ogihara , Masahisa Tamura , Yoshihiro Tsuchiya , Takashi Watanabe , Toshihiro Ozawa
发明人： Kazuichi OE , Tatsuo Kumano , Yasuo Noguchi , Kazutaka Ogihara , Masahisa Tamura , Yoshihiro Tsuchiya , Takashi Watanabe , Toshihiro Ozawa
IPC分类号： G06F12/00
CPC分类号： G06F3/0644 , G06F3/061 , G06F3/0659 , G06F3/0676
摘要： A file server has a conversion table that stores therein, in a corresponding manner, logical addresses specified by a higher-level layer and physical addresses specified by a disk driver that are address information indicative of a storage area in a disk device. The file server accesses the disk device with a storage area indicated by a physical address as an access destination and counts up the number of access requests to each storage area in a given period of time for each of the logical addresses. The file server then updates the conversion table such that the physical addresses are lined up in a descending order of the logical addresses of a higher number of the access requests counted. Thereafter, the file server changes storage areas of data stored in the storage device based on the conversion table updated.
摘要翻译：文件服务器具有转换表，其中以对应的方式存储由较高级别层指定的逻辑地址和由盘驱动器指定的指示盘设备中的存储区域的地址信息指定的物理地址。文件服务器以由物理地址指示的存储区域作为访问目的地访问磁盘设备，并且在每个逻辑地址的给定时间段内对每个存储区域的访问请求数进行计数。然后，文件服务器更新转换表，使得物理地址以更高数量的访问请求的逻辑地址的降序排列。此后，文件服务器基于更新的转换表来改变存储在存储装置中的数据的存储区域。

64. 发明授权

US08130475B2 Method for manufacturing CPP-type thin film magnetic head provided with a pair of magnetically free layers 有权
标题翻译：制造具有一对无磁性层的CPP型薄膜磁头的方法
公开(公告)号：US08130475B2
公开(公告)日：2012-03-06
申请号：US12588559
申请日：2009-10-20
申请人： Keita Kawamori , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita
发明人： Keita Kawamori , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita
IPC分类号： G11B5/127 , G11B5/33 , B32B37/02
CPC分类号： G11B5/3163 , B82Y25/00 , G01R33/02 , G01R33/093 , G01R33/098 , G11B5/3912 , G11B5/398 , Y10T156/1043 , Y10T428/11
摘要： The present invention relates to a method of manufacturing a DFL type thin film magnetic head. The method includes laminating each of the layers from the lower magnetization control layer to the upper exchange coupling layer above the substrate; laminating an auxiliary magnetization control layer including at least a CoZrTa layer above the upper exchange coupling layer; forming at least each of the layers from the lower exchange coupling layer to the auxiliary magnetization control layer in pillar shape, and disposing the bias magnetic field application layer at an opposite position with respect to the ABS of each of the pillar shaped layers; trimming the auxiliary magnetization control layer by removing a part of the auxiliary magnetization control layer that is formed in the pillar shape, and disposing the upper shield layer such that the trimmed auxiliary magnetization control layer is at least covered.
摘要翻译：本发明涉及一种制造DFL型薄膜磁头的方法。该方法包括将来自下部磁化控制层的每个层层压到衬底上方的上部交换耦合层; 层叠在所述上交换耦合层上方至少包含CoZrTa层的辅助磁化控制层; 从所述下交换耦合层至所述辅助磁化控制层至少形成每个所述层，并将所述偏磁场施加层设置在相对于每个所述柱状层的ABS的相对位置; 通过去除形成在柱状的辅助磁化控制层的一部分来修整辅助磁化控制层，并且设置上部屏蔽层，使得修整的辅助磁化控制层至少被覆盖。

65. 发明授权

US08094420B2 Magnetoresistive device of the CCP (current perpendicular to plane) type with single-domain control of magnetization, and associated magnetic disk system 有权
标题翻译： CCP的磁阻器件（电流垂直于平面）型，具有单域控制磁化，以及相关的磁盘系统
公开(公告)号：US08094420B2
公开(公告)日：2012-01-10
申请号：US12126567
申请日：2008-05-23
申请人： Toshiyuki Ayukawa , Takahiko Machita , Daisuke Miyauchi , Tsutomu Chou , Koji Shimazawa , Shinji Hara , Tomohito Mizuno , Yoshihiro Tsuchiya
发明人： Toshiyuki Ayukawa , Takahiko Machita , Daisuke Miyauchi , Tsutomu Chou , Koji Shimazawa , Shinji Hara , Tomohito Mizuno , Yoshihiro Tsuchiya
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3932
摘要： The invention provides a magnetoresistive device of the CCP (current perpendicular to plane) structure comprising a magnetoresistive unit sandwiched between soft magnetic shield layers with a current applied in the stacking direction. The magnetoresistive unit comprises a nonmagnetic intermediate layer sandwiched between ferromagnetic layers. A planar framework positions the soft magnetic shield layers and comprises a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer constructed by repeating the stacking of a multilayer unit comprising a nonmagnetic underlay layer and a high coercive material layer. The nonmagnetic gap layer is designed and located such that a magnetic flux given out of the bias magnetic field-applying layer is efficiently directed along a closed magnetic path around the framework to form a single domain of magnetization.
摘要翻译：本发明提供了一种CCP（电流垂直于平面）结构的磁阻器件，其包括夹在软磁屏蔽层之间的磁阻单元，其中沿着层叠方向施加电流。磁阻单元包括夹在铁磁层之间的非磁性中间层。平面框架定位软磁屏蔽层，并且包括非磁性间隙层与通过重复堆叠包括非磁性底层和高矫顽材料层的多层单元构成的偏置磁场施加层的组合。非磁性间隙层被设计和定位成使得从偏置磁场施加层给出的磁通量有效地沿着围绕框架的闭合磁路引导以形成单个磁化域。

66. 发明授权

US08085512B2 CPP-type magnetoresistance effect element having a pair of free layers 有权
标题翻译： CPP型磁阻效应元件具有一对自由层
公开(公告)号：US08085512B2
公开(公告)日：2011-12-27
申请号：US12045927
申请日：2008-03-11
申请人： Tomohito Mizuno , Yoshihiro Tsuchiya , Shinji Hara , Koji Shimazawa , Tsutomu Chou
发明人： Tomohito Mizuno , Yoshihiro Tsuchiya , Shinji Hara , Koji Shimazawa , Tsutomu Chou
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3932 , G11B2005/3996
摘要： A magnetic field detecting element comprises: a stack which includes first, second and third magnetic layers whose magnetization directions depend upon an external magnetic field, the second magnetic layer being positioned between the first magnetic layer and the third magnetic layer, a first non-magnetic intermediate layer sandwiched between the first magnetic layer and the second magnetic layer, and a second non-magnetic intermediate layer sandwiched between the second magnetic layer and the third magnetic layer, wherein the stack is adapted such that sense current flows in a direction that is perpendicular to a film surface thereof; and a bias magnetic layer which is provided on a side of the stack, the side being opposite to an air bearing surface of the stack.
摘要翻译：磁场检测元件包括：堆叠，其包括其磁化方向取决于外部磁场的第一，第二和第三磁性层，第二磁性层位于第一磁性层和第三磁性层之间，第一非磁性层夹在第一磁性层和第二磁性层之间的中间层和夹在第二磁性层和第三磁性层之间的第二非磁性中间层，其中该堆叠适于使得感测电流沿垂直的方向流动到其膜表面; 以及偏置磁性层，其设置在所述堆叠的一侧，所述侧面与所述堆叠的空气支承表面相对。

67. 发明授权

US08023230B2 Magnetoresistive element including a pair of ferromagnetic layers coupled to a pair of shield layers 有权
标题翻译：磁阻元件包括耦合到一对屏蔽层的一对铁磁层
公开(公告)号：US08023230B2
公开(公告)日：2011-09-20
申请号：US12289401
申请日：2008-10-27
申请人： Takahiko Machita , Daisuke Miyauchi , Yoshihiro Tsuchiya , Tsutomu Chou , Shinji Hara , Koji Shimazawa
发明人： Takahiko Machita , Daisuke Miyauchi , Yoshihiro Tsuchiya , Tsutomu Chou , Shinji Hara , Koji Shimazawa
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3912 , G11B2005/3996
摘要： A magnetoresistive element includes a pair of shield portions, and an MR stack and a bias magnetic field applying layer that are disposed between the pair of shield portions. The shield portions respectively include single magnetic domain portions. The MR stack includes a pair of ferromagnetic layers magnetically coupled to the pair of single magnetic domain portions, and a spacer layer disposed between the pair of ferromagnetic layers. The MR stack has a front end face, a rear end face and two side surfaces. The magnetoresistive element further includes two flux guide layers disposed between the pair of single magnetic domain portions and respectively adjacent to the two side surfaces of the MR stack. Each of the two flux guide layers has a front end face and a rear end face. The bias magnetic field applying layer has a front end face that faces the rear end face of the MR stack and the respective rear end faces of the two flux guide layers.
摘要翻译：磁阻元件包括一对屏蔽部分，以及设置在该对屏蔽部分之间的MR堆叠和偏置磁场施加层。屏蔽部分别包括单个磁畴部分。 MR堆叠包括磁耦合到该对单个磁畴部分的一对铁磁层，以及设置在该对铁磁层之间的间隔层。 MR堆叠具有前端面，后端面和两个侧面。磁阻元件还包括设置在一对单磁畴部分之间并且分别邻近MR堆叠的两个侧表面的两个磁通引导层。两个磁通导向层中的每一个具有前端面和后端面。偏置磁场施加层具有面向MR堆叠的后端面的前端面和两个导流层的各个后端面。

68. 发明申请

US20110222190A1 TEMPERATURE ASSISTED MAGNETIC RECORDING ELEMENT HAVING GROUNDED NEAR FIELD LIGHT GENERATOR 有权
标题翻译：具有接地的近场磁光记录元件的温度辅助记录元件
公开(公告)号：US20110222190A1
公开(公告)日：2011-09-15
申请号：US12722742
申请日：2010-03-12
申请人： Shinji Hara , Tsutomu Chou , Yoshihiro Tsuchiya
发明人： Shinji Hara , Tsutomu Chou , Yoshihiro Tsuchiya
IPC分类号： G11B5/60 , G11B5/127
CPC分类号： G11B5/314 , B82Y20/00 , G02B6/1226 , G11B5/3116 , G11B5/6005 , G11B5/6088 , G11B2005/0021
摘要： A magnetic recording element has a substrate, a main pole for recording that includes an edge part positioned on an air bearing surface (ABS), a waveguide through which a laser light propagates, and a plasmon generator. The plasmon generator is positioned away from the substrate and extends to the ABS as facing a part of the waveguide. The plasmon generator has a propagation edge extending in a longitudinal direction. The propagation edge has an overlapping part overlapping the waveguide in the longitudinal direction, and a near field light generator positioned on the ABS and located in the vicinity of the edge part of the recording magnetic pole. The overlapping part of the propagation edge is coupled with the laser light propagating through the waveguide in a surface plasmon mode so that a surface plasmon is generated. The propagation edge propagates the surface plasmon generated in the overlapping part to the near field light generator. The magnetic recording element further has a grounding element electrically connecting the plasmon generator and the substrate.
摘要翻译：磁记录元件具有基板，用于记录的主极，其包括位于空气轴承表面（ABS）上的边缘部分，激光传播的波导和等离子体激元发生器。等离子体发生器远离基板定位，并且面向波导的一部分延伸到ABS。等离子体发生器具有沿纵向方向延伸的传播边缘。传播边缘具有在纵向上与波导重叠的重叠部分，以及位于ABS上且位于记录磁极的边缘部分附近的近场光发生器。传播边缘的重叠部分与以表面等离子体模式传播通过波导的激光耦合，从而产生表面等离子体激元。传播边缘将在重叠部分中产生的表面等离子体激元传播到近场光发生器。磁记录元件还具有电连接等离子体发生器和基板的接地元件。

69. 发明授权

US07974048B2 Magneto-resistive effect device of CPP type having shield layers coupled with ferromagnetic layers 有权
标题翻译：具有与铁磁层耦合的屏蔽层的CPP型磁阻效应器件
公开(公告)号：US07974048B2
公开(公告)日：2011-07-05
申请号：US11946358
申请日：2007-11-28
申请人： Koji Shimazawa , Daisuke Miyauchi , Yoshihiro Tsuchiya , Takahiko Machita , Shinji Hara
发明人： Koji Shimazawa , Daisuke Miyauchi , Yoshihiro Tsuchiya , Takahiko Machita , Shinji Hara
IPC分类号： G11B5/39
CPC分类号： H01F10/3254 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3909 , G11B5/3912 , G11B2005/3996 , H01F10/30
摘要： The invention provides a magneto-resistive effect device of the CPP (current perpendicular to plane) structure, having a magneto-resistive effect unit, and a first shield layer and a second shield layer located and formed such that the magneto-resistive effect unit is sandwiched between them, with a sense current applied in a stacking direction.
摘要翻译：本发明提供了一种具有磁阻效应单元的CPP（垂直于平面电流）结构的磁阻效应器件，以及位于和形成为使得磁阻效应单元是第一屏蔽层和第二屏蔽层的第一屏蔽层和第二屏蔽层夹在它们之间，具有沿层叠方向施加的感测电流。

70. 发明申请

US20110091744A1 Method for manufacturing CPP-type thin film magnetic head provided with a pair of magnetically free layers 有权
标题翻译：制造具有一对无磁性层的CPP型薄膜磁头的方法
公开(公告)号：US20110091744A1
公开(公告)日：2011-04-21
申请号：US12588559
申请日：2009-10-20
申请人： Keita Kawamori , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita
发明人： Keita Kawamori , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita
IPC分类号： G11B5/33 , B32B37/02
CPC分类号： G11B5/3163 , B82Y25/00 , G01R33/02 , G01R33/093 , G01R33/098 , G11B5/3912 , G11B5/398 , Y10T156/1043 , Y10T428/11
摘要： The present invention relates to a method of manufacturing a DFL type thin film magnetic head. The method includes laminating each of the layers from the lower magnetization control layer to the upper exchange coupling layer above the substrate; laminating an auxiliary magnetization control layer including at least a CoZrTa layer above the upper exchange coupling layer; forming at least each of the layers from the lower exchange coupling layer to the auxiliary magnetization control layer in pillar shape, and disposing the bias magnetic field application layer at an opposite position with respect to the ABS of each of the pillar shaped layers; trimming the auxiliary magnetization control layer by removing a part of the auxiliary magnetization control layer that is formed in the pillar shape, and disposing the upper shield layer such that the trimmed auxiliary magnetization control layer is at least covered.
摘要翻译：本发明涉及一种制造DFL型薄膜磁头的方法。该方法包括将来自下部磁化控制层的每个层层压到衬底上方的上部交换耦合层; 层叠在所述上交换耦合层上方至少包含CoZrTa层的辅助磁化控制层; 从所述下交换耦合层至所述辅助磁化控制层至少形成各层，并将所述偏磁场施加层设置在相对于所述柱状层的每一个的ABS的相反位置; 通过去除形成在柱状的辅助磁化控制层的一部分来修整辅助磁化控制层，并且设置上部屏蔽层，使得修整的辅助磁化控制层至少被覆盖。

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