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    • 63. 发明授权
    • Process for producing antipilling acrylic synthetic fiber
    • 生产抗张力丙烯酸合成纤维的方法
    • US4447384A
    • 1984-05-08
    • US339008
    • 1982-01-12
    • Hitoshi TamuraKatsuhei Shigeoka
    • Hitoshi TamuraKatsuhei Shigeoka
    • D01F6/18
    • D01F6/18
    • An acrylic fiber produced by the dry-spinning process having, as characteristic properties, a tensile strength of 1.2-2.5 g/denier, a knot strength (g/denier)-knot elongation (%) product of 25 or less and a boiling water shrinkage rate of 5% or less. Said fiber can be obtained by dry-spinning a spinning solution of acrylonitrile type polymer containing 85% by weight or more of acrylonitrile, stretching the resulting fiber in hot water at a stretch ratio ranging from 1 to 2, subjecting the stretched fiber to a drying and relaxing to give the fiber a shrinkage of 10-40% and then stretching it at a stretch ratio of 1.2-2.3 at a temperature of 180.degree.-210.degree. C.
    • 通过干法纺丝法制造的丙烯酸纤维具有1.2-2.5g /旦尼尔的拉伸强度,25或更小的结强度(g /旦尼尔) - 结长度(%)积和沸点 收缩率在5%以下。 所述纤维可以通过将含有85重量%以上的丙烯腈的丙烯腈型聚合物的纺丝溶液进行干纺,以1〜2的拉伸倍率在热水中拉伸而得到纤维,使拉伸纤维进行干燥 并松弛,使纤维的收缩率为10-40%,然后在180-210℃的温度下以1.2-2.3的拉伸比拉伸。
    • 66. 发明申请
    • Plasma Processing Apparatus and Plasma Processing Method
    • 等离子体处理装置和等离子体处理方法
    • US20120145323A1
    • 2012-06-14
    • US13399465
    • 2012-02-17
    • Hitoshi TamuraNaoki YasuiSeiichi Watanabe
    • Hitoshi TamuraNaoki YasuiSeiichi Watanabe
    • B05C11/00
    • H01L21/6833H01J37/32706
    • A plasma processing apparatus for subjecting a substrate to be processed to plasma processing includes a processing chamber, a substrate electrode having an electrostatic chuck mechanism, a plasma generator, a high-frequency bias power supply which applies a high-frequency bias voltage to the substrate electrode, a voltage monitor which monitors the high-frequency bias voltage, a current monitor which monitors a high-frequency bias current, a measurement storage unit which stores a resistance component, an induction component and a capacity component of the electrostatic chuck mechanism, which have been calculated beforehand as fitting parameters of an expression V w = V esc - R esc  I esc - L esc   I esc  t - 1 C esc  ∫ I esc   t + A , ( A ) that is an approximate curve of a correlation among a voltage of the substrate, a computing unit which estimates the voltage of the substrate according to the expression, and a control unit that generates a control signal for the high-frequency bias power supply based on the voltage of the substrate.
    • 用于对待处理的基板进行等离子体处理的等离子体处理装置包括处理室,具有静电卡盘机构的基板电极,等离子体发生器,向基板施加高频偏置电压的高频偏置电源 电极,监视高频偏置电压的电压监视器,监视高频偏置电流的电流监视器,存储电阻分量的测量存储单元,静电卡盘机构的感应部件和电容分量,其中 预先计算出的表达式的拟合参数V w = V esc - R esc I I I - - - - - - - ( - 衬底的电压,根据表达式估计衬底的电压的计算单元和产生t的控制信号的控制单元之间的相关性的近似曲线 他基于基板电压的高频偏置电源。
    • 69. 发明授权
    • Plasma processing apparatus and plasma processing method
    • 等离子体处理装置和等离子体处理方法
    • US07955514B2
    • 2011-06-07
    • US11679926
    • 2007-02-28
    • Kazue TakahashiHitoshi TamuraMotohiro TanakaMotohiko Yoshigai
    • Kazue TakahashiHitoshi TamuraMotohiro TanakaMotohiko Yoshigai
    • B44C1/22C03C15/00C03C25/68C23F1/00
    • H01J37/32477H01J37/32623H01J37/32834H01J37/32862
    • A plasma processing apparatus having a processing chamber and a sample base, and processing a sample by using plasma generated inside the processing chamber, the processing chamber being located inside a vacuum container, the sample base being located inside the processing chamber, the sample being mounted on the sample base, the plasma processing apparatus including a component member configuring inner-side wall surface of the processing chamber, and having a dielectric portion on the inner-side wall surface, an exhaustion unit for exhausting the inside of the processing chamber, and an electric-field supply unit for supplying an electric field to the component member in a state where the plasma will not be generated inside the processing chamber, wherein magnitude of the electric field supplied from the electric-field supply unit is changed rapidly while exhausting the inside of the processing chamber by the exhaustion unit.
    • 一种等离子体处理装置,其具有处理室和样品基底,并且通过使用在处理室内产生的等离子体处理样品,处理室位于真空容器内,样品基座位于处理室内部,样品被安装 在样品基体上,等离子体处理装置包括构成处理室的内侧壁面的构成部件,在内侧壁面上具有电介质部分,排出处理室内部的排出部,以及 电场供给单元,用于在处理室内不产生等离子体的状态下向构件部件供给电场,其中,从电场供给单元供给的电场的大小迅速变化,同时排出 通过排气单元在处理室内部。