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    • 61. 发明申请
    • PROCESS FOR PRODUCING POROUS, CURRENT-CONDUCTING MOULDED BODIES MADE OF SILICON CARBIDE AND MOULDED BODIES THUS PRODUCED
    • 工艺,一种生产多孔,通过状体流由硅及成型
    • WO1995028365A1
    • 1995-10-26
    • PCT/DE1995000540
    • 1995-04-15
    • FORSCHUNGSZENTRUM JÜLICH GMBHKOCH, Freimut, J.DIAS, Francisco, J.KAMPEL, MarianNICKEL, Hubertus
    • FORSCHUNGSZENTRUM JÜLICH GMBH
    • C04B35/573
    • C04B38/0635C04B2111/00405C04B2111/00793C04B2111/94F01N3/022H05B3/148H05B2203/021Y02T10/20C04B35/565C04B38/007
    • A process is disclosed for producing porous, current-conducting moulded bodies made of silicon carbide. For that purpose, a granulate with grains in a size range from 0.2 to 10 mm or a powder mixture are used. To form the granulate, silicon, carbon and/or alpha -silicon carbide are used as starting materials, besides a coking organic binder. A green compact is formed therewith and coked in an inert gas atmosphere or in a vacuum by heating up to a temperature in a range from 600 to 1000 DEG C. The green compact obtained by coking is heated up to a temperature from 1600 to 2000 DEG C, causing silicon to react with carbon and form beta -silicon carbide. Components may thus be produced with more or less sharply defined partial regions, layers or zones, whose arrangement in the component determines its temperature profile when current flows therethrough. These areas have a lower or higher specific resistance, as required. To form these moulded bodies, the powder mixtures and/or granulates used to form the various layers and/or regions are composed of coking organic binder, and in addition either of silicon, of silicon and carbon, of silicon, carbon and alpha -silicon carbide, or only of alpha -silicon carbide, and of further doping substances required to achieve the desired electric conductivity.
    • 本发明涉及一种制备碳化硅的多孔的,成型体通过其流动。 它是从0.2晶粒尺寸间隔一个颗粒部分的颗粒 - 10mm或使用混合粉末,也没有硅,碳和/或α-碳化硅在地层中使用它们作为起始原料除一个cokable有机粘合剂。 因此,生坯体形成,在惰性气体气氛中或在真空中通过加热到在600的范围内的温度 - 1000℃碳化。 该焦化成型体所得的后加热至1600的温度 - 2000℃下加热,其中,与碳硅形成的β-碳化硅反应。 本发明使得能够生产具有其确定在电流通过期间,其温度分布组件及其布置更多或更少的清晰地限定的部分,层或区域等的组件。 的部分具有,根据规格更低或更高的电阻率。 在形成生坯体的用于各个层和/或混合的粉末和/或颗粒的区域被用于该生产,从焦化有机粘合剂和另外任选地由硅或硅和碳或硅和碳和α-碳化硅或仅α - 碳化硅已经用掺杂剂以实现所需的电导率被任选还形成并且附加。
    • 63. 发明申请
    • MOUNTING FOR A PROBE TIP IN A SCANNING FORCE OR SCANNING TUNNELING MICROSCOPE
    • 支持某个探头尖端原子的或扫描隧道显微镜
    • WO1995013518A1
    • 1995-05-18
    • PCT/DE1994001334
    • 1994-11-09
    • FORSCHUNGSZENTRUM JÜLICH GMBHSAURENBACH, FrankFUSS, Hans-Achim
    • FORSCHUNGSZENTRUM JÜLICH GMBH
    • G01B07/34
    • G01Q70/02G01Q20/02Y10S977/862
    • A mount unit is proposed for a probe tip (1 in fig. 2) in a scanning probe microscope. The probe tip is designed for scanning the topography of a sample surface at levels of resolution down to atomic level. The movement of the probe tip is measured by interferometry. For this purpose, an optical guide (7) is used; the optical outlet (10) is fixed opposite and at a small distance (9) from the probe tip, which moves relative to the said outlet, in such a way that the interference between a light beam reflected at the optical outlet and one reflected by the probe tip can be determined with the aid of an interferometer. In order to facilitate the adjustment and replacement of the probe tip, the optical guide (7) is contained in a ferrule mounted on the support with a ferrule head (8), and the probe tip is secured to the ferrule in such a way that the optical outlet (10) is at a predetermined distance from the probe tip once the ferrule has been assembled.
    • 的安装件单元是在扫描探针显微镜提出用于探针尖端(图1中的2)。 探针尖端被设计用于扫描样品表面的形貌在分辨率等级降低到原子水平。 探针尖端的运动由干涉测量。 为了这个目的,以导光体(7)被使用; 所述光学出口(10)相对的固定,并在从探头尖端,其中与所述出口相对移动一个小的距离(9),在寻求一种方法所做的光束之间的干涉反射的光出口和一个由反射 探针尖端可以是确定与干涉仪的辅助下开采。 为了便于尖端探针的调整和更换,光导(7)被容纳在安装在支撑有一箍头(8),并且探针尖端的套圈在寻求一种方法那样被固定到箍圈 所述光学出口(10)是在从探头尖端的预定距离一旦套圈已经组装。
    • 65. 发明申请
    • PROCESS FOR PRODUCING THIN FILMS BY MEANS OF REACTIVE CATHODE SPUTTERING AND DEVICE FOR IMPLEMENTING IT
    • 通过反应式阴极溅射法生产薄膜的方法及其实施装置
    • WO1993016211A1
    • 1993-08-19
    • PCT/DE1993000125
    • 1993-02-13
    • FORSCHUNGSZENTRUM JÜLICH GMBHWÖRDENWEBER, RogerKRÜGER, UrsusKUTZNER, Rolf
    • FORSCHUNGSZENTRUM JÜLICH GMBH
    • C23C14/54
    • C23C14/54C23C14/0042Y10S505/731Y10S505/816
    • The invention relates to a process for producing thin films in which the pressure of the process gas is kept constant in a process chamber with a gas inlet and outlet, a target and a substrate, while material is sputtered from the target and deposited on the substrate. The invention also relates to a process for producing thin films. It is the purpose of the invention to create a process providing a more homogenous thin film. According to the invention, to this end the process gas is caused to reach the plasma. Alternatively, either one or several emission lines may be spectroscopically detected in a spatial region and, after a desired cross-sectional shape has been set, it is kept constant in time by subsequently regulating the process gas mixing ratio. It is also possible to attain the set aim by arranging a probe in such a way that charged atoms of the process gas are detected and, to attain the desired homogeneity, the voltage at the probe is constantly regulated by subsequently adjusting the process gas mixing ratio.
    • 本发明涉及一种生产薄膜的方法,其中在具有气体入口和出口,靶和基底的处理室中工艺气体的压力保持恒定,同时材料从靶溅射并沉积在基底上 。 本发明还涉及薄膜的制造方法。 本发明的目的是创造一种提供更均匀的薄膜的方法。 根据本发明,为此,使工艺气体达到等离子体。 或者,可以在空间区域中光谱检测一个或多个发射线,并且在设定了所需截面形状之后,通过随后调节工艺气体混合比在时间上保持恒定。 也可以通过以检测处理气体的带电原子的方式设置探针来实现设定的目的,并且为了获得所需的均匀性,通过随后调整工艺气体混合比率来恒定地调节探针处的电压 。