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61. 发明授权

EP1706898B1 TEMPERATURE CONTROLLED HOT EDGE RING ASSEMBLY FOR REDUCING PLASMA REACTOR ETCH RATE DRIFT 有权转让
标题翻译：用于降低等离子体反应器蚀刻速率漂移的温度控制热边缘环组装
公开(公告)号：EP1706898B1
公开(公告)日：2017-09-20
申请号：EP04818010.3
申请日：2004-12-10
申请人： LAM RESEARCH CORPORATION
发明人： FISCHER, Andreas , LOEWENHARDT, Peter
IPC分类号： H01L21/67 , H01L21/687 , H01J37/32
CPC分类号： H01L21/68735 , H01J37/32642 , H01L21/67069

62. 发明授权

EP1399944B1 APPARATUS AND METHOD FOR RADIO FREQUENCY DE-COUPLING AND BIAS VOLTAGE CONTROL IN A PLASMA REACTOR 有权
标题翻译：装置和方法射频去耦和偏置控制在等离子体反应器
公开(公告)号：EP1399944B1
公开(公告)日：2014-05-07
申请号：EP02744704.4
申请日：2002-06-27
申请人： LAM RESEARCH CORPORATION
发明人： FISCHER, Andreas
IPC分类号： H01J37/32
CPC分类号： H01J37/32091 , H01J37/32165 , H01J37/32174 , H01J37/32706

63. 发明公开

EP1765541A2 REDUCING PLASMA IGNITION PRESSURE 审中-公开
标题翻译：降低等离子点火压力
公开(公告)号：EP1765541A2
公开(公告)日：2007-03-28
申请号：EP05761079.2
申请日：2005-06-14
申请人： LAM RESEARCH CORPORATION
发明人： WIEPKING, Mark , LYNDAKER, Bradford J , KUTHI, Andras , FISCHER, Andreas
IPC分类号： B23K9/00 , B23K9/02
CPC分类号： H01J37/32009 , H01J37/32082 , H01J37/32706
摘要： A method in a plasma processing system for processing a semiconductor substrate is disclosed. The plasma processing system includes a plasma processing chamber and an electrostatic chuck coupled to a bias compensation circuit. The method includes igniting a plasma in a plasma ignition step. Plasma ignition step is performed while a first bias compensation voltage provided by the bias compensation circuit to the chuck is substantially zero and while a first chamber pressure within the plasma processing chamber is below about 90 mTorr. The method further includes processing the substrate in a substrate-processing step after the plasma is ignited. The substrate-processing step employs a second bias compensation voltage provided by the bias compensation circuit that is higher than the first bias compensation voltage and a second chamber pressure substantially equal to the first chamber pressure.
摘要翻译：公开了一种用于处理半导体衬底的等离子体处理系统中的方法。等离子体处理系统包括等离子体处理室和耦合到偏置补偿电路的静电吸盘。该方法包括在等离子体点火步骤中点燃等离子体。等离子体点火步骤在由偏置补偿电路提供给卡盘的第一偏置补偿电压基本为零并且等离子体处理室内的第一室压低于约90毫托时执行。该方法还包括在等离子体被点燃之后在衬底处理步骤中处理衬底。衬底处理步骤采用由偏置补偿电路提供的高于第一偏置补偿电压的第二偏置补偿电压以及基本上等于第一室压力的第二室压力。

64. 发明公开

EP1706892A2 SEGMENTED RADIO FREQUENCY ELECTRODE APPARATUS AND METHOD FOR UNIFORMITY CONTROL 审中-公开
标题翻译：基于分段射频电极的装置和方法GLEICHFÖRMIGKEITSSTEUERUNG
公开(公告)号：EP1706892A2
公开(公告)日：2006-10-04
申请号：EP04813703.8
申请日：2004-12-10
申请人： LAM RESEARCH CORPORATION
发明人： FISCHER, Andreas
IPC分类号： H01L21/00
CPC分类号： H01J37/32082 , H01J37/32532
摘要： A segmented radio frequency (RF) powered electrode for use in plasma processing. The electrode includes a first electrode, a second electrode surrounding the first electrode, and a dielectric material interposed between the first electrode and the second electrode. The dielectric material electrically isolates the first electrode from the second electrode. At least one dual frequency radio frequency power source outputs RF power at a first frequency and a second frequency. The first frequency and the second frequency are different such that at least one radio frequency switch routes at least the first frequency or the second frequency from the at least one dual frequency source to the first electrode, the second electrode, or the first electrode and the second electrode.

65. 发明公开

EP1516350A2 PLASMA PROCESSOR WITH ELECTRODE SIMULTANEOUSLY RESPONSIVE TO PLURAL FREQUENCIES 有权
标题翻译：具有不同频率驱动电极在同一等离子体反应器
公开(公告)号：EP1516350A2
公开(公告)日：2005-03-23
申请号：EP03739211.5
申请日：2003-06-20
申请人： LAM Research Corporation
发明人： VAHEDI, Vahid , LOEWENHARDT, Peter , ELLINGBOE, Bert , KUTHI, Andy , FISCHER, Andreas
IPC分类号： H01J37/32
CPC分类号： H01J37/32082 , H01J37/32165
摘要： A plasma in a vacuum chamber where a workpiece is processed is bounded by a plasma confinement volume including a region between a first electrode simultaneously responsive to power at first and second RF frequencies and a DC grounded second electrode. A DC grounded extension is substantially aligned with the first electrode. A substantial percentage of power at the first frequency is coupled to a path including the first and second electrodes but not the extension while a substantial percentage of power at the second frequency is coupled to a path including the first electrodes and extension, but not the second electrode. Changing the relative powers at the first and second frequencies, as applied to the first electrode, controls DC bias voltage of the first electrode.

66. 发明授权

EP2380412B1 METHODS AND APPARATUS FOR DUAL CONFINEMENT AND ULTRA-HIGH PRESSURE IN AN ADJUSTABLE GAP PLASMA CHAMBER 有权
标题翻译：用于可调间隙等离子室中的双重约束和超高压力的方法和装置
公开(公告)号：EP2380412B1
公开(公告)日：2017-09-27
申请号：EP09837887.0
申请日：2009-12-16
申请人： LAM Research Corporation
发明人： FISCHER, Andreas , HUDSON, Eric
IPC分类号： H05H1/34 , H01J37/32 , C23C16/509 , C23C16/458 , C23C16/455
CPC分类号： H01J37/32091 , H01J37/32449 , H01J37/32532 , H01J37/32541 , H01J37/32568 , H01J37/32623 , H01J37/32642 , H01J37/32816 , H01J37/3299 , H01L21/3065

67. 发明授权

EP1190437B1 Plasma processing system and method for delivering RF power to a plasma processing chamber 有权
标题翻译：用于等离子处理腔室的RF电源的等离子体处理装置和方法
公开(公告)号：EP1190437B1
公开(公告)日：2007-08-22
申请号：EP00948512.9
申请日：2000-06-15
申请人： LAM RESEARCH CORPORATION
发明人： FISCHER, Andreas , KADKHODAYAN, Babak , KUTHI, Andras
IPC分类号： H01J37/32
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/32577
摘要： The present invention provides a plasma processing apparatus, system, and method for providing RF power to a plasma processing chamber. The plasma processing system (300) includes an RF generator (310), a plasma chamber (304), a match network box (308), a first cable (314), a second cable (316), and means for electrically isolating (312) the match network box. The RF generator generates RF power for transmission to the plasma chamber. The plasma chamber receives the RF power for processing the wafer (302) and is characterized by an internal impedance during the plasma processing. The plasma chamber has one or more walls (344) for returning RF currents. The match network box is capable of receiving the RF currents and generates an impedance that matches the internal impedance of the plasma chamber to the impedance of the RF generator. The first cable is coupled between the RF generator and the match network box for transmitting RF power between the RF generator and the match network box. The second cable is coupled between the match network box and the plasma chamber for transmitting RF power between the match network and the plasma chamber. The second cable provides a return path for an RF return current from the plasma chamber to the match network box. The electrically isolating means electrically isolates the match network box from electrical contacts with the plasma chamber such that only the second cable provides the return path for the RF return current from the plasma chamber to the match network box.

68. 发明公开

EP1706898A2 TEMPERATURE CONTROLLED HOT EDGE RING ASSEMBLY FOR REDUCING PLASMA REACTOR ETCH RATE DRIFT 有权转让
标题翻译：控制温度的热边缘环组合，以减少等离子体反应器ÄTZRATENDRIFTENS
公开(公告)号：EP1706898A2
公开(公告)日：2006-10-04
申请号：EP04818010.3
申请日：2004-12-10
申请人： LAM RESEARCH CORPORATION
发明人： FISCHER, Andreas , LOEWENHARDT, Peter
IPC分类号： H01L21/306 , B24B37/04 , B24B41/06 , B24B5/00 , B24B29/00 , C23F1/02
CPC分类号： H01L21/68735 , H01J37/32642 , H01L21/67069
摘要： A temperature-controlled hot edge ring assembly adapted to surround a substrate support in a plasma reaction chamber. The assembly includes a conductive lower ring, a ceramic intermediate ring, and an upper ring. The intermediate ring overlies the lower ring and is adapted to be attached via the lower ring to an RF electrode. The upper ring overlies the intermediate ring, and has an upper surface exposed to an interior of a plasma reaction chamber.

69. 发明公开

EP2380413A2 CONTROLLING ION ENERGY DISTRIBUTION IN PLASMA PROCESSING SYSTEMS 审中-公开
标题翻译：控制离子能量分布的等离子体处理系统
公开(公告)号：EP2380413A2
公开(公告)日：2011-10-26
申请号：EP09837888.8
申请日：2009-12-16
申请人： LAM Research Corporation
发明人： FISCHER, Andreas , HUDSON, Eric
IPC分类号： H05H1/36 , H01L21/3065
CPC分类号： H01J37/32623 , H01J37/32091
摘要： A plasma processing system for processing at least a substrate with plasma. The plasma processing chamber is capable of controlling ion energy distribution. The plasma processing system may include a first electrode. The plasma processing system also includes a second electrode that is different from the first electrode and is configured for bearing the substrate. The plasma processing system may also include a signal source coupled with the first electrode. The signal source may provide a non-sinusoidal signal through the first electrode to control ion energy distribution at the substrate when the substrate is processed in the plasma processing system, wherein the non-sinusoidal signal is periodic.

70. 发明公开

EP2329521A2 ADJUSTABLE THERMAL CONTACT BETWEEN AN ELECTROSTATIC CHUCK AND A HOT EDGE RING BY CLOCKING A COUPLING RING 审中-公开
标题翻译：调整用散热联系之间的静电吸盘和热边缘环BY激活连接的环的
公开(公告)号：EP2329521A2
公开(公告)日：2011-06-08
申请号：EP09816793.5
申请日：2009-09-23
申请人： LAM Research Corporation
发明人： POVOLNY, Henry S. , FISCHER, Andreas
IPC分类号： H01L21/368 , H01L21/687 , H05H1/34
CPC分类号： H01L21/67103 , H01J37/32642 , H01J37/32715 , H01J37/32724 , H01J2237/2001 , H01L21/67069 , H01L21/6831 , Y10T279/23 , Y10T403/21
摘要： A clockable device for use with an electrostatic chuck configured to hold a substrate in a plasma environment is disclosed. The clockable device comprises a first portion of the electrostatic chuck having at least one face with variable thermal contact areas located thereon. A second portion of the electrostatic chuck has at least one face with variable thermal contact areas located thereon. The at least one face of the second portion is configured to be placed in thermal contact with the at least one face of the first portion to control a thermal gradient across a face of the substrate.

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