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    • 61. 发明申请
    • METHOD FOR CHANGING ROUTE IN WIRELESS COMMUNICATION
    • 在无线通信中改变路由的方法
    • US20100099415A1
    • 2010-04-22
    • US12449248
    • 2008-01-30
    • Hui LiPing LiLan WangYi Sheng XueWolfgang Zirwas
    • Hui LiPing LiLan WangYi Sheng XueWolfgang Zirwas
    • H04W40/02H04W36/12
    • H04W36/30H04B7/2606H04W16/26H04W40/22H04W40/36H04W84/047
    • A method for changing a route in wireless communication involves: when there is subscriber equipment requesting a change of route in a cell, a base station negotiates downlink measurement contents with a relay station facilitating the route change in the cell; a network side informs the subscriber equipment requesting a change of route of the negotiated downlink measurement contents, and the subscriber equipment executes a downlink measurement according to the received measurement contents and reports the downlink measurement results to a radio access point; and the radio access point executes the route change for said subscriber equipment according to the received measurement results. The method can effectively improve the accuracy of the route change and alleviate the delay due to the route change.
    • 一种用于在无线通信中改变路由的方法包括:当存在请求小区中的路由改变的用户设备时,基站与促进小区中的路由改变的中继站协商下行链路测量内容; 网络侧通知用户设备请求改变协商的下行链路测量内容的路由,并且用户设备根据接收到的测量内容执行下行链路测量,并将下行链路测量结果报告给无线接入点; 并且无线接入点根据接收的测量结果执行所述用户设备的路由改变。 该方法可以有效提高路由变化的准确性,减轻路由变化引起的延迟。
    • 63. 发明授权
    • Implementation of storing secret information in data storage reader products
    • 实现将秘密信息存储在数据存储阅读器产品中
    • US07552345B2
    • 2009-06-23
    • US10092049
    • 2002-03-04
    • Robert C. ChangPing LiFarshid Sabet-Sharghi
    • Robert C. ChangPing LiFarshid Sabet-Sharghi
    • G06F21/00H04L9/00
    • G06F21/79G06F21/34G06F2221/2107
    • Methods and apparatus for enabling protected contents such as device keys to be stored on a reader are disclosed. According to one aspect of the present invention, a method for accessing a memory storage device that includes a memory and is coupled to a host system through an adapter, the memory storage device including a memory includes obtaining a key from the adapter. The key is suitable for encrypting information that is arranged to be stored in the memory, and is also suitable for decrypting the encrypted information. The method also includes processing the information using the key. In one embodiment, the information is stored in the memory, and the information that is stored in the memory is obtained by processing the information such that the information may be decrypted using the key.
    • 公开了用于使受保护的内容(诸如设备密钥)能够存储在读取器上的方法和装置。 根据本发明的一个方面,一种用于访问包括存储器并且通过适配器耦合到主机系统的存储器存储设备的方法,所述存储器存储设备包括存储器包括从所述适配器获取密钥。 密钥适用于加密存储在存储器中的信息,也适用于对加密信息进行解密。 该方法还包括使用密钥处理信息。 在一个实施例中,信息被存储在存储器中,并且通过处理信息来获得存储在存储器中的信息,使得可以使用密钥对信息进行解密。
    • 67. 发明申请
    • DIRECTIONAL COUPLER FOR ACCURATE POWER DETECTION
    • 用于精确功率检测的方向耦合器
    • US20070296397A1
    • 2007-12-27
    • US11475783
    • 2006-06-27
    • Ping Li
    • Ping Li
    • G01R23/04
    • H01P5/184G01R21/01
    • A power detection system implemented using a pair of directional couplers and a transmission line (or equivalent) disposed between the directional couplers, wherein the transmission line (or equivalent) provides a 90° phase shift between the directional couplers. Accurate power detection is provided by combining the powers detected at each of the directional couplers, whereby the combined power is independent of load phase. The total power in the forward case is given by Pc1=2*Pf*C, where Pf is the forward power and C is the coupling coefficient the directional couplers. The total power in the reflected case is given by Pc1=2*Pf*C*(ρ2+D2), where Pf is the forward power, C is the coupling coefficient of said directional couplers, ρ is the reflection coefficient, and D is the directivity of the directional couplers.
    • 使用一对定向耦合器和设置在定向耦合器之间的传输线(或等效物体)实现的功率检测系统,其中传输线(或等效物)在定向耦合器之间提供90°的相移。 通过组合在每个定向耦合器处检测到的功率来提供精确的功率检测,由此组合的功率独立于负载相位。 正向情况下的总功率由下式给出:其中P 是正向功率,C 是耦合系数的定向耦合器。 反射情况下的总功率由下式给出:P C *(R 2 O 2 + D 2) ),其中P 是正向功率,C是所述定向耦合器的耦合系数,rho是反射系数,D是定向耦合器的方向性。
    • 69. 发明申请
    • Implementation of In-System Programming to Update Firmware 0n Memory Cards
    • 实现在系统内编程更新固件0n存储卡
    • US20070234341A1
    • 2007-10-04
    • US11758449
    • 2007-06-05
    • Robert ChangPing LiFarshid Sabet-Sharghi
    • Robert ChangPing LiFarshid Sabet-Sharghi
    • G06F9/44
    • G06F8/65
    • Methods and apparatus for efficiently enabling firmware associated with a flash memory card to be updated are disclosed. According to one aspect of the present invention, a method for updating firmware associated with a memory storage device includes providing new firmware to a host and sending the new firmware from the host to a reader which communicates with the host. The reader interfaces with the memory storage device which includes installed firmware. The method also includes sending the new firmware from the reader to the memory storage device, and incorporating the new firmware into the memory storage device such that the new firmware at least partially replaces the installed firmware. In one embodiment, the method further includes embedding the new firmware into a first command. In such an embodiment, sending the new firmware from the host to the reader includes sending the first command from the host to the reader.
    • 公开了用于有效地实现与更新闪存卡相关联的固件的方法和装置。 根据本发明的一个方面,一种用于更新与存储器存储设备相关联的固件的方法包括向主机提供新的固件并将新固件从主机发送到与主机通信的读取器。 读卡器与包括已安装固件的存储器设备接口。 该方法还包括将新固件从读取器发送到存储器存储设备,并将新固件合并到存储器存储设备中,使得新固件至少部分地替代已安装的固件。 在一个实施例中,该方法还包括将新固件嵌入到第一命令中。 在这样的实施例中,将新固件从主机发送到读取器包括将第一命令从主机发送到读取器。
    • 70. 发明申请
    • MULTI-STEP PROCESS FOR FORMING A BARRIER FILM FOR USE IN COPPER LAYER FORMATION
    • 形成用于铜层形成的障壁膜的多步法
    • US20070178692A1
    • 2007-08-02
    • US11733673
    • 2007-04-10
    • Wilbur CatabayZhihai WangPing Li
    • Wilbur CatabayZhihai WangPing Li
    • H01L21/4763
    • H01L21/76843H01L21/2855H01L21/76844H01L21/76846H01L21/76855H01L21/76858H01L21/76859H01L21/76864H01L21/76871H01L21/76873H01L21/76874H01L23/53238H01L2924/0002H01L2924/00
    • Embodiments of the invention include a method for forming a copper interconnect having a bi-layer copper barrier layer. The method comprises the steps of providing a substrate in a processing chamber, the substrate having a low-K dielectric insulating layer and an opening in the insulating layer. A first barrier layer of tantalum/tantalum nitride is formed on the insulating layer and in the opening. A second barrier layer is formed on the first barrier layer. The second barrier layer consisting of a material selected from the group of palladium, chromium, tantalum, magnesium, and molybdenum. A copper seed layer is formed on the second barrier layer and a bulk copper layer is formed on the seed layer. The substrate is annealed and subject to further processing which can include planarization. Other embodiments include providing a substrate in a processing chamber and forming a copper seed layer on the substrate. The seed layer is implanted with barrier materials to form an implanted seed layer followed by bulk copper-containing layer formation. The substrate is annealed to form a final barrier layer. In a related embodiment the step of forming a seed layer is replaced with the steps of forming a first barrier layer on the substrate and forming a copper seed layer on the first barrier layer. After implantation of barrier material into the seed layer and bulk deposition of copper-containing material, the substrate is annealed to form a final barrier layer. In yet another related embodiment the step of forming a seed layer is replaced with the steps of forming a first barrier layer on the substrate and forming a second barrier layer on the first layer. A copper seed layer is formed on the second barrier layer. After implantation of barrier material into the seed layer and bulk deposition of copper-containing material, the substrate is annealed to form a final barrier layer.
    • 本发明的实施例包括一种形成具有双层铜阻挡层的铜互连的方法。 该方法包括以下步骤:在处理室中提供衬底,所述衬底具有低K电介质绝缘层和绝缘层中的开口。 在绝缘层和开口中形成钽/氮化钽的第一阻挡层。 在第一阻挡层上形成第二阻挡层。 第二阻挡层由选自钯,铬,钽,镁和钼的材料组成。 在第二阻挡层上形成铜籽晶层,在籽晶层上形成体铜层。 将衬底退火并进行可包括平坦化的进一步加工。 其他实施例包括在处理室中提供衬底并在衬底上形成铜籽晶层。 种子层被植入阻挡材料以形成植入的种子层,然后形成大块含铜层。 将衬底退火以形成最终的阻挡层。 在相关实施例中,形成种子层的步骤被替换为在衬底上形成第一阻挡层并在第一阻挡层上形成铜籽晶层的步骤。 在将阻挡材料植入种子层和含铜材料的大量沉积之后,将衬底退火以形成最终的阻挡层。 在另一相关实施例中,形成种子层的步骤被替换为在衬底上形成第一阻挡层并在第一层上形成第二阻挡层的步骤。 在第二阻挡层上形成铜籽晶层。 在将阻挡材料植入种子层和含铜材料的大量沉积之后,将衬底退火以形成最终的阻挡层。