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61. 发明授权

US06301435B1 Heating method 失效
标题翻译：加热方式
公开(公告)号：US06301435B1
公开(公告)日：2001-10-09
申请号：US09573227
申请日：2000-05-19
申请人： Shinichi Ito , Katsuya Okumura
发明人： Shinichi Ito , Katsuya Okumura
IPC分类号： F26B1900
CPC分类号： F26B3/28
摘要： A heating method for heating an object by making use of a heating apparatus comprising lamps and light transmissive columnar bodies each being positioned in front of and in the light irradiating direction of each of the lamps and having a fore-end constituting a light-receiving face for taking up an irradiated light from the lamp and a rear-end constituting a light-irradiating face for irradiating light; the object being disposed to face the light-irradiating faces of the light transmissive columnar bodies and heated by the irradiation of light transmitted via the light transmissive columnar bodies from the lamps. A distance between the light-irradiating faces of the light transmissive columnar bodies and the object is set to around 0.3L or not less than 0.8L (herein, L is a width of the light-irradiating face).
摘要翻译：一种利用包括灯和透光柱状体的加热装置加热物体的加热方法，每个灯都位于每个灯的前面和光线照射方向上，并且具有构成光接收面的前端用于摄取来自灯的照射光和构成用于照射光的光照射面的后端; 物体被设置为面对透光柱状体的光照射面，并且通过从灯透过的透光柱状体的光的照射被加热。透光性柱状体的光照射面与物体之间的距离设定为0.3L以下且0.8L以上（此处，L为照射面的宽度）。

62. 发明授权

US06284020B1 Method of maintaining cleanliness of substrates and box for accommodating substrates 有权
标题翻译：保持基板清洁度的方法和用于容纳基板的盒子
公开(公告)号：US06284020B1
公开(公告)日：2001-09-04
申请号：US09555501
申请日：2000-06-02
申请人： Ayako Mizuno , Makiko Katano , Katsuya Okumura
发明人： Ayako Mizuno , Makiko Katano , Katsuya Okumura
IPC分类号： B01D5000
CPC分类号： H01L21/67366 , H01L21/67017 , H01L21/67393
摘要： A method of maintaining cleanliness of substrates including a first step for accommodating at least a piece of substrate having a gaseous impurity-trapping filter arranged close thereto in a hermetically sealed box, and a second step for circulating the atmosphere in the box at a rate of two or more times a minute so that impurities in the atmosphere are adsorbed by the gaseous impurity-trapping filter. A box for accommodating substrates includes a housing in which space for accommodating the substrates is hermetically closed with a lid, a gaseous impurity-trapping filter arranged in the housing and adapted to adsorb impurities contained in the atmosphere in space, and an atmosphere-circulating device having a ratio of the circulating capacity to the space volume of not smaller than 2 in order to circulate the atmosphere so as to pass it through the gaseous impurity-trapping filter.
摘要翻译：一种保持基板的清洁的方法，包括：第一步骤，用于将至少一片具有靠近其设置的气态杂质捕获过滤器的基板容纳在气密密封的盒子中;第二步骤，用于使盒子中的气氛以两次或更多次，使得大气中的杂质被气态杂质捕获过滤器吸附。用于容纳基板的盒子包括壳体，其中容纳基板的空间用盖子气密地封闭，气体杂质捕获过滤器布置在壳体中并且适于吸收空间中包含的杂质，并且气氛循环装置使循环容积与空间体积的比率不小于2，以使气氛循环，以使其通过气态杂质捕获过滤器。

63. 发明授权

US06239441B1 Apparatus for manufacturing a semiconductor device and a method for manufacturing a semiconductor device 失效
标题翻译：半导体装置的制造装置及半导体装置的制造方法
公开(公告)号：US06239441B1
公开(公告)日：2001-05-29
申请号：US09007053
申请日：1998-01-14
申请人： Kyoichi Suguro , Katsuya Okumura
发明人： Kyoichi Suguro , Katsuya Okumura
IPC分类号： H01J37317
CPC分类号： H01L21/26593 , H01J37/3171 , H01L21/26513 , H01L21/324
摘要： The purpose of the present invention is to avoid a decrease in the mechanical strength of a Si substrate because of the repetition of ion-implantation and annealing processes. As ions are implanted while the Si substrate surface temperature is kept at as low as −60° C. or less. Then the Si substrate is heated to recover the implantation defects caused by the ion-implantation. Such a combination of the low temperature ion-implantation and the annealing processes is repeated as required.
摘要翻译：本发明的目的是避免由于重复离子注入和退火过程而导致的Si衬底的机械强度降低。当Si衬底表面温度保持在-60℃以下时，注入离子。然后加热Si衬底以回收由离子注入引起的注入缺陷。根据需要重复低温离子注入和退火处理的这种组合。

64. 发明授权

US6159303A Liquid displacement apparatus and liquid displacement method 失效
标题翻译：液体置换装置和液体置换法
公开(公告)号：US6159303A
公开(公告)日：2000-12-12
申请号：US105029
申请日：1998-06-25
申请人： Soichi Nadahara , Katsuya Okumura
发明人： Soichi Nadahara , Katsuya Okumura
IPC分类号： B08B3/02 , B08B3/04 , H01L21/00 , H01L21/304 , B08B7/04
CPC分类号： H01L21/67057 , B08B3/044 , H01L21/67051 , Y10S134/902
摘要： A liquid displacement apparatus comprises a processing tank for placing a target object in its inside, a supply unit for supplying at least pure water into the processing tank from a lower part thereof, in which the pure water is drained by overflow from an upper part of the processing tank, and a drain unit disposed in the upper part of the processing tank for partially increasing a flow rate of the pure water in the processing tank.
摘要翻译：液体置换装置包括用于将目标物体放置在其内部的处理槽，供应单元，用于从其下部向处理槽供应至少纯净的水，其中纯净水从上部溢出排出处理罐和设置在处理槽的上部的排出单元，用于部分地增加处理槽中的纯水的流量。

65. 发明授权

US6072162A Device and method for heating substrate, and method for treating substrate 失效
标题翻译：基板加热装置及方法，基板处理方法
公开(公告)号：US6072162A
公开(公告)日：2000-06-06
申请号：US352323
申请日：1999-07-12
申请人： Shinichi Ito , Katsuya Okumura
发明人： Shinichi Ito , Katsuya Okumura
IPC分类号： G03F7/16 , H01L21/00 , H01L21/027 , H05B3/26 , H05B3/68 , C23C16/00
CPC分类号： H01L21/67109 , H01L21/67103 , H05B3/262 , H05B3/68 , H05B2203/022
摘要： A device for heating a substrate comprises a heating plate for heating a to-be-treated substrate, substrate holding section for holding the to-be-treated substrate on the heating plate, a gas stream producing section for producing a gas stream in a space above the heating plate in one direction along a surface of the heating plate, and a heater provided at the heating plate, and having pattern symmetrical with respect to a gas stream flowing through the center of the heating plate, wherein the heater comprises a first heater constituting section having heater elements arranged in the form of a ring, and a second heater constituting section located inside the first heater constituting section and having heater elements which are arranged so that more heat is generated in an upstream side of the gas stream than in a downstream side thereof.
摘要翻译：用于加热基板的装置包括用于加热被处理基板的加热板，用于将待处理基板保持在加热板上的基板保持部分，用于在空间中产生气流的气流产生部分在加热板的一个方向上方，以及设置在加热板上的加热器，并且具有相对于流过加热板的中心的气流对称的图案，其中加热器包括第一加热器具有以环形形式设置的加热器元件的构成部分和位于第一加热器构成部分内部的第二加热器构成部分，并且具有加热器元件，其布置成在气流的上游侧产生比在下游侧。

66. 发明授权

US6059880A Coating apparatus 失效
标题翻译：涂装设备
公开(公告)号：US6059880A
公开(公告)日：2000-05-09
申请号：US995990
申请日：1997-12-22
申请人： Takahiro Kitano , Katsuya Okumura , Shinichi Ito
发明人： Takahiro Kitano , Katsuya Okumura , Shinichi Ito
IPC分类号： B05C11/08 , G03F7/16 , H01L21/027 , B05C5/00
CPC分类号： G03F7/162
摘要： A coating apparatus according to the invention comprises a spin chuck for holding a substrate, resist solution tanks which contain a primary resist solution, a thinner tank which contains thinner, a confluence valve communicating with the thinner tank and the resist solution tanks, first pumps each for supplying the confluence valve with the primary resist solution from a corresponding one of the resist solution tanks, a second pump for supplying thinner from the thinner tank to the confluence valve, a mixer for mixing the primary treatment solution and thinner supplied from the confluence valve, a nozzle for applying a solution from the mixer, to the substrate held by the spin chuck, and a controller for controlling the first and second pumps to adjust the mixture ratio of the primary resist solution to be supplied from each of the resist solution tanks to the confluence valve, to thinner to be supplied from the thinner tank to the confluence valve.
摘要翻译：根据本发明的涂覆装置包括：用于保持基底的旋转卡盘，含有主抗蚀剂溶液的抗蚀剂溶液罐，含有较薄的罐的较薄的罐，与较薄罐相连的汇流阀和抗蚀剂溶液罐，首先泵送每个用于从所述抗蚀剂溶液罐中的相应的一个供应所述汇流阀，用于从所述较薄罐向所述汇流阀供应较薄的第二泵，用于混合所述主处理溶液和从所述汇流阀供应的稀释剂的混合器用于将来自混合器的溶液施加到由旋转卡盘保持的基板的喷嘴，以及用于控制第一和第二泵以调节要从每个抗蚀剂溶液罐供应的主抗蚀剂溶液的混合比率的控制器到合流阀，从较薄的罐到合流阀更薄。

67. 发明授权

US6048791A Semiconductor device with electrode formed of conductive layer consisting of polysilicon layer and metal-silicide layer and its manufacturing method 失效
标题翻译：具有由多晶硅层和金属硅化物层组成的导电层形成的电极的半导体器件及其制造方法
公开(公告)号：US6048791A
公开(公告)日：2000-04-11
申请号：US50357
申请日：1998-03-31
申请人： Tomio Katata , Katsuya Okumura
发明人： Tomio Katata , Katsuya Okumura
IPC分类号： H01L29/78 , H01L21/28 , H01L21/44 , H01L21/4763
CPC分类号： H01L21/28061
摘要： A first TiSix layer is deposited on a polysilicon layer, then a silicon substrate is annealed in a vacuum atmosphere to crystallize the TiSix layer, and a second TiSix layer is provided on the first crystallized TiSix layer.
摘要翻译：第一TiSix层沉积在多晶硅层上，然后将硅衬底在真空气氛中退火以使TiSix层结晶，并且在第一结晶TiSix层上提供第二TiSix层。

68. 发明授权

US5989759A Pattern forming method using alignment from latent image or base pattern on substrate 失效
标题翻译：图案形成方法使用在底物上的潜像或基底图案的取向
公开(公告)号：US5989759A
公开(公告)日：1999-11-23
申请号：US30886
申请日：1998-02-26
申请人： Atsushi Ando , Kazuyoshi Sugihara , Katsuya Okumura , Tetsuro Nakasugi
发明人： Atsushi Ando , Kazuyoshi Sugihara , Katsuya Okumura , Tetsuro Nakasugi
IPC分类号： G03F7/20 , H01J37/304 , H01J37/317 , H01L21/027 , G03F9/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/7045 , G03F7/70675 , H01J37/3045 , H01J37/3174 , Y10S430/143
摘要： To achieve down-sizing and improvements of throughputs, light exposure and charge beam exposure are sometimes used together. In case of performing exposure of a desired pattern in a plurality of stages, a positional displacement of each of exposure patterns in the stages leads to a decrease in exposure accuracy. According to the present invention, in case of forming a fine pattern by exposure after exposure of a rough pattern, the exposure position of the rough pattern is adjusted, based on a latent image of the rough pattern which has been subjected to exposure. As a result, a positional displacement between rough and fine patterns is reduced so that a desired pattern can be formed with high accuracy.
摘要翻译：为了实现规模缩小和吞吐量的提高，有时一起使用曝光和电荷束曝光。在多级中进行期望图案的曝光的情况下，各级的曝光图案的位置偏移导致曝光精度降低。根据本发明，在粗糙图案曝光后通过曝光形成精细图案的情况下，基于经受曝光的粗糙图案的潜像，调整粗糙图案的曝光位置。结果，粗图案和精细图案之间的位置偏移减小，从而可以高精度地形成期望的图案。

69. 发明授权

US5950099A Method of forming an interconnect 失效
标题翻译：形成互连的方法
公开(公告)号：US5950099A
公开(公告)日：1999-09-07
申请号：US629442
申请日：1996-04-09
申请人： Naohiro Shoda , Katsuya Okumura
发明人： Naohiro Shoda , Katsuya Okumura
IPC分类号： H01L21/28 , H01L21/285 , H01L21/3205 , H01L23/52 , H01L21/265
CPC分类号： H01L21/28512
摘要： A method for fabricating a damascene interconnect includes the steps of depositing a metal layer of the surface of an insulating film; etching the metal layer and the insulating film to form an insulating groove; depositing a silicon layer on an upper surface on the metal layer and on each sidewall and a bottom of the insulating groove; annealing the silicon layer and the metal layer to form a silicide layer; implanting ions in the bottom of the insulating groove; and depositing an interconnect material in the insulating groove using selective chemical vapor deposition. In one embodiment, the metal layer is a titanium layer, the interconnect material is tungsten, and the implanted ions are arsenic ions.
摘要翻译：一种用于制造镶嵌互连的方法包括沉积绝缘膜表面的金属层的步骤; 蚀刻金属层和绝缘膜以形成绝缘槽; 在金属层的上表面和绝缘槽的每个侧壁和底部上沉积硅层; 退火硅层和金属层以形成硅化物层; 将离子注入绝缘槽的底部; 以及使用选择性化学气相沉积在所述绝缘槽中沉积互连材料。在一个实施例中，金属层是钛层，互连材料是钨，注入的离子是砷离子。

70. 发明授权

US5888876A Deep trench filling method using silicon film deposition and silicon migration 失效
标题翻译：使用硅膜沉积和硅迁移的深沟槽填充方法
公开(公告)号：US5888876A
公开(公告)日：1999-03-30
申请号：US628094
申请日：1996-04-09
申请人： Jun-ichi Shiozawa , Yoshitaka Tsunashima , Katsuya Okumura
发明人： Jun-ichi Shiozawa , Yoshitaka Tsunashima , Katsuya Okumura
IPC分类号： H01L21/76 , H01L21/334 , H01L21/763 , H01L21/768 , H01L21/8242 , H01L27/108 , H01L21/20
CPC分类号： H01L29/66181 , H01L21/763 , H01L21/76877
摘要： A method of filling one or more trenches formed in a silicon substrate includes the steps of forming a thin polycrystalline silicon film in a trench such that the thin polycrystalline silicon film is sufficiently thin so as to not close the trench; forming an amorphous silicon film on thin polycrystalline film and the surface of the substrate and in the trenches; and annealing the amorphous silicon film such that the amorphous silicon layer migrates to fill the trenches to a first level. The deposition and annealing steps are performed in ambient atmospheres having low partial pressures of H.sub.2 O and O.sub.2, the annealing temperature is higher than the deposition temperature, and the annealing pressure is greater than the deposition pressure.
摘要翻译：填充形成在硅衬底中的一个或多个沟槽的方法包括以下步骤：在沟槽中形成薄多晶硅膜，使得薄多晶硅膜足够薄以便不关闭沟槽; 在薄多晶膜和衬底的表面和沟槽中形成非晶硅膜; 以及使所述非晶硅膜退火，使得所述非晶硅层迁移以将所述沟槽填充至第一水平。沉积和退火步骤在具有低的H 2 O和O 2分压的环境气氛中进行，退火温度高于沉积温度，并且退火压力大于沉积压力。

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