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61. 发明授权

US5431794A Process for forming metal films by plasma sputtering 失效
标题翻译：通过等离子体溅射形成金属膜的工艺
公开(公告)号：US5431794A
公开(公告)日：1995-07-11
申请号：US130199
申请日：1993-11-05
申请人： Shigeo Matsumaru , Toru Watanabe , Akira Kubotsu , Shuichi Nogawa , Kiyoshi Ogata , Daisuke Inoue
发明人： Shigeo Matsumaru , Toru Watanabe , Akira Kubotsu , Shuichi Nogawa , Kiyoshi Ogata , Daisuke Inoue
IPC分类号： C23C14/20 , C23C14/34
CPC分类号： C23C14/20 , Y10S428/913 , Y10T428/31692
摘要： A metal film high in reflectivity and excellent in adhesion to a synthetic resin substrate even in the case where the metal film is sufficiently thin, is formed on a surface of the substrate by sputtering a metal target by ions through an inert gas plasma in a vacuum vessel, wherein the substrate is covered with an electrostatic shield during the sputtering.
摘要翻译：通过在真空中通过惰性气体等离子体溅射金属靶，在基板的表面上形成即使在金属膜足够薄的情况下，反射率高且对合成树脂基板的粘附性也优异的金属膜容器，其中在溅射期间衬底被静电屏蔽覆盖。

62. 发明授权

US5316802A Method of forming copper film on substrate 失效
标题翻译：在基材上形成铜膜的方法
公开(公告)号：US5316802A
公开(公告)日：1994-05-31
申请号：US892378
申请日：1992-06-04
申请人： Akinori Ebe , Kiyoshi Ogata , Satoshi Nishiyama , Naoto Kuratani , Taizo Okazaki
发明人： Akinori Ebe , Kiyoshi Ogata , Satoshi Nishiyama , Naoto Kuratani , Taizo Okazaki
IPC分类号： C23C14/20 , C23C14/22 , C30B23/02 , B05D3/06
CPC分类号： C23C14/22 , C23C14/20 , C30B23/002 , C30B23/02 , C30B29/02 , Y10S428/901 , Y10T428/24355 , Y10T428/31678 , Y10T428/31681 , Y10T428/31721
摘要： A copper film coated substrate includes a substrate and a copper film formed on a surface of the substrate. The copper film has an X-ray diffraction intensity of 2.0 cps per unit film thickness at a crystal orientation (111) face of the copper film. A crystal orientation of a copper thin film is controlled by irradiating a surface of a substrate with inert gas ions before forming a copper thin film on the substrate by a physical vapor deposition process. A copper thin film is formed by irradiating a surface of a substrate with ions, and depositing a copper thin film on the irradiated substrate. In the ion irradiating step, an ion irradiation energy for a dosage of the irradiated ions is controlled, so that crystal is greatly grown to be orientated in a direction of copper (111) face with a less dosage of the irradiated ions.
摘要翻译：铜膜被覆基板包括在基板的表面上形成的基板和铜膜。铜膜在铜膜的晶体取向（111）面上的单位膜厚的X射线衍射强度为2.0cps。通过物理气相沉积工艺在衬底上形成铜薄膜之前，用惰性气体离子照射衬底的表面来控制铜薄膜的晶体取向。通过用离子照射衬底的表面并在照射的衬底上沉积铜薄膜来形成铜薄膜。在离子照射步骤中，控制照射离子的用量的离子照射能量，使得以较少量的照射离子在铜（111）面的方向上极大地生长晶体以取向。

63. 发明授权

US5009923A Method of forming diamond film 失效
标题翻译：形成金刚石薄膜的方法
公开(公告)号：US5009923A
公开(公告)日：1991-04-23
申请号：US544800
申请日：1990-06-27
申请人： Kiyoshi Ogata , Yasunori Ando , Eiji Kamijo
发明人： Kiyoshi Ogata , Yasunori Ando , Eiji Kamijo
IPC分类号： C23C14/06 , C23C14/22 , C30B23/02
CPC分类号： C23C14/22 , C23C14/0611 , C30B23/02 , C30B29/04
摘要： A method of forming a diamond film on a substrate comprises the steps of depositing carbon on said substrate in vacuum by vapor deposition, and irradiating accelerated ions onto said substrate, said ions being obtained by ionizing a gas composed of at least one of a hydrogen gas, inert gases, hydrocarbon gases, organic compound gases and silicon base gases.

64. 发明授权

US08873715B2 Industrial X-ray tube 有权
标题翻译：工业X射线管
公开(公告)号：US08873715B2
公开(公告)日：2014-10-28
申请号：US13194355
申请日：2011-07-29
申请人： Kiyoshi Ogata , Yoshihiro Takeda , Tetsuo Kani , Makoto Kanbe , Naohisa Osaka , Takahisa Sato
发明人： Kiyoshi Ogata , Yoshihiro Takeda , Tetsuo Kani , Makoto Kanbe , Naohisa Osaka , Takahisa Sato
IPC分类号： G21G4/08 , G21G4/04 , H01J35/06 , H01J35/16
CPC分类号： H01J35/16 , H01J35/065 , H01J2235/062 , H01J2235/16
摘要： An industrial X-ray tube formed by accommodating a cathode and anode in a container having an evacuated interior, in which electrons emitted from the cathode are caused to strike the anode and X-rays are emitted from the anode. The cathode is formed from graphite. The graphite is a layered crystal obtained by layering a plurality of carbon hexagonal planes. The graphite is cut based on crystal axes of the carbon hexagonal planes. The resulting cut surface is caused to function as an electron-emitting surface. For example, directions of an a- and b-crystal axis may be set so as to be arbitrary between each of the layers of the carbon hexagonal planes, the graphite may be cut along a surface parallel to the c-axis, and the resulting cut surface may be caused to function as an electron-emitting surface. The graphite may also be cut along a surface orthogonal to the c-axis.
摘要翻译：通过将阴极和阳极容纳在具有抽空的内部的容器中形成的工业X射线管，其中从阴极发射的电子被引向阳极，并且从阳极发射X射线。阴极由石墨形成。石墨是通过层叠多个碳六角形平面而获得的层状晶体。基于碳六角形平面的晶轴切割石墨。使得到的切割表面用作电子发射表面。例如，可以将a晶体轴和b晶轴的方向设定为在碳六角形平面的各层之间是任意的，可以沿着与c轴平行的表面切割石墨，并且由此产生可能导致切割表面起电子发射表面的作用。也可以沿着与c轴正交的表面切割石墨。

65. 发明授权

US08712013B2 Motion control system and X-ray measurement apparatus 有权
标题翻译：运动控制系统和X射线测量仪
公开(公告)号：US08712013B2
公开(公告)日：2014-04-29
申请号：US13219966
申请日：2011-08-29
申请人： Tetsuo Kani , Tomoyasu Ueda , Kiyoshi Ogata , Kazuhiko Omote , Kenji Wakasaya
发明人： Tetsuo Kani , Tomoyasu Ueda , Kiyoshi Ogata , Kazuhiko Omote , Kenji Wakasaya
IPC分类号： G01N23/20
CPC分类号： G05B19/19 , G01N23/20016
摘要： A motion control system comprising a servo motor for moving a rotary stage; a scale provided on the rotary stage or on an object that moves integrally with the rotary stage; a plurality of reading heads for detecting the scale and outputting a signal; a data processing part for calculating an average value of rotation angle data based on each of the output signals from the reading heads and outputting the average value as a signal; and a servo amplifier for controlling the motor based on the signal representing the average value of the rotation angle. The motion control system can cause the rotary stage to rotate to a desired rotation angle to a high degree of accuracy using the reading heads.
摘要翻译：一种运动控制系统，包括用于移动旋转台的伺服电动机; 设置在旋转台上或与旋转台整体移动的物体上的刻度; 多个读取头，用于检测刻度并输出信号; 数据处理部分，用于基于来自读取头的每个输出信号计算旋转角度数据的平均值，并输出平均值作为信号; 以及伺服放大器，用于基于表示旋转角度的平均值的信号来控制电动机。运动控制系统可以使用读取头使旋转台以高精确度转动到期望的旋转角度。

66. 发明授权

US07986041B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07986041B2
公开(公告)日：2011-07-26
申请号：US12815976
申请日：2010-06-15
申请人： Jun Tanaka , Miharu Otani , Kiyoshi Ogata , Yasumichi Suzuki , Katsuhiko Hotta
发明人： Jun Tanaka , Miharu Otani , Kiyoshi Ogata , Yasumichi Suzuki , Katsuhiko Hotta
IPC分类号： H01L23/522
CPC分类号： H01L21/76835 , H01L21/3148 , H01L21/31612 , H01L21/31629 , H01L21/31633 , H01L21/318 , H01L21/76801 , H01L21/7681 , H01L23/3114 , H01L23/3171 , H01L23/5222 , H01L23/525 , H01L23/53228 , H01L23/53238 , H01L23/53295 , H01L23/564 , H01L23/585 , H01L24/45 , H01L24/48 , H01L2224/05569 , H01L2224/05572 , H01L2224/45144 , H01L2224/45147 , H01L2224/48247 , H01L2224/48465 , H01L2224/48599 , H01L2224/48799 , H01L2924/00014 , H01L2924/0002 , H01L2924/01015 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/13091 , H01L2924/181 , H01L2924/3025 , H01L2924/00 , H01L2224/05552 , H01L2224/05599 , H01L2924/00012
摘要： As etch-stop films or Cu-diffusion barrier films used in insulation films constituting conductor layers of a stacked structure, films having smaller dielectric constant than silicon nitride films are used, and an insulation film at a lower-layer part of the stacked structure is made to have smaller dielectric constant than that at an upper-layer part thereof, and further this insulation film is a silicon oxide (SiO) film and has, in the interior thereof, nano-pores of from 0.05 nm or more to 4 nm or less in diameter as chief construction. This makes it possible to dramatically reduce effective dielectric constant while keeping the mechanical strength of the conductor layers themselves, and can materialize a highly reliable and high-performance semiconductor device having mitigated the wiring delay of signals which pass through wirings.
摘要翻译：作为构成叠层结构的导体层的绝缘膜中的蚀刻停止膜或Cu扩散阻挡膜，使用介电常数比氮化硅膜低的膜，层叠结构的下层部的绝缘膜为使其具有比其上层部分更小的介电常数，并且此绝缘膜是氧化硅（SiO）膜，并且在其内部具有0.05nm以上至4nm的纳米孔，或者直径较小的主要建筑。这使得可以显着降低有效介电常数同时保持导体层本身的机械强度，并且可以实现高度可靠和高性能的半导体器件，其减轻了通过布线的信号的布线延迟。

67. 发明授权

US07747337B2 Apparatus and method for managing audio data and recording apparatus 有权
标题翻译：用于管理音频数据和记录装置的装置和方法
公开(公告)号：US07747337B2
公开(公告)日：2010-06-29
申请号：US10275517
申请日：2002-03-15
申请人： Kiyoshi Ogata
发明人： Kiyoshi Ogata
IPC分类号： G06F17/00
CPC分类号： G11B27/034 , G11B19/022 , G11B27/105 , G11B27/11 , G11B27/329 , G11B27/34 , G11B2220/20 , G11B2220/2512 , G11B2220/2545 , G11B2220/65
摘要： An audio playback apparatus that reproduces audio data stored in the form of an electronic file includes a hard disc drive for storing audio data and management data for managing the audio data; an external interface section for outputting the management data read from the hard disc drive, to an external editing apparatus and for receiving the management data edited by the external editing apparatus; and a control section for rewriting the management data stored in the hard disc drive to the management data edited by the external editing apparatus. By using the external editing apparatus to edit additional information for managing the audio data stored in the hard disc drive of large capacity, the labor in editing additional information can be saved.
摘要翻译：再现以电子文件形式存储的音频数据的音频播放装置包括用于存储音频数据的硬盘驱动器和用于管理音频数据的管理数据; 用于将从硬盘驱动器读取的管理数据输出到外部编辑装置并用于接收由外部编辑装置编辑的管理数据的外部接口部分; 以及用于将存储在硬盘驱动器中的管理数据重写到由外部编辑装置编辑的管理数据的控制部分。通过使用外部编辑装置编辑用于管理存储在大容量的硬盘驱动器中的音频数据的附加信息，可以节省编辑附加信息的劳动。

68. 发明授权

US07521744B2 Resin-encapsulated semiconductor apparatus and process for its fabrication 失效
公开(公告)号：US07521744B2
公开(公告)日：2009-04-21
申请号：US11182857
申请日：2005-07-18
申请人： Jun Tanaka , Keiko Isoda , Kiyoshi Ogata
发明人： Jun Tanaka , Keiko Isoda , Kiyoshi Ogata
IPC分类号： H01L29/51
CPC分类号： C08L79/08 , H01L23/293 , H01L23/3171 , H01L23/4951 , H01L24/45 , H01L24/48 , H01L31/0203 , H01L2224/32245 , H01L2224/45144 , H01L2224/4826 , H01L2224/73215 , H01L2924/01019 , H01L2924/01039 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , H01L2924/1815 , H01L2924/19041 , H01L2924/00 , H01L2924/00014 , H01L2924/00012
摘要： The present invention provides a resin-encapsulated semiconductor apparatus comprising a semiconductor device having a ferroelectric film and a surface-protective film, and an encapsulant member comprising a resin; the surface-protective film being formed of a polyimide. The present invention also provides a process for fabricating a resin-encapsulated semiconductor apparatus, comprising the steps of forming a film of a polyimide precursor composition on the surface of a semiconductor device having a ferroelectric film; heat-curing the polyimide precursor composition film to form a surface-protective film formed of a polyimide; and encapsulating, with an encapsulant resin, the semiconductor device on which the surface-protective film has been formed. The polyimide may preferably have a glass transition temperature of from 240° C. to 400° C. and a Young's modulus of from 2,600 MPa to 6 GPa. The curing may preferably be carried out at a temperature of from 230° C. to 300° C.

69. 发明授权

US07247525B2 Method for manufacturing a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07247525B2
公开(公告)日：2007-07-24
申请号：US11211547
申请日：2005-08-26
申请人： Jun Tanaka , Miharu Otani , Kiyoshi Ogata , Yasumichi Suzuki , Katsuhiko Hotta
发明人： Jun Tanaka , Miharu Otani , Kiyoshi Ogata , Yasumichi Suzuki , Katsuhiko Hotta
IPC分类号： H01L21/00
CPC分类号： H01L21/76835 , H01L21/3148 , H01L21/31612 , H01L21/31629 , H01L21/31633 , H01L21/318 , H01L21/76801 , H01L21/7681 , H01L23/3114 , H01L23/3171 , H01L23/5222 , H01L23/525 , H01L23/53228 , H01L23/53238 , H01L23/53295 , H01L23/564 , H01L23/585 , H01L24/45 , H01L24/48 , H01L2224/05569 , H01L2224/05572 , H01L2224/45144 , H01L2224/45147 , H01L2224/48247 , H01L2224/48465 , H01L2224/48599 , H01L2224/48799 , H01L2924/00014 , H01L2924/0002 , H01L2924/01015 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/13091 , H01L2924/181 , H01L2924/3025 , H01L2924/00 , H01L2224/05552 , H01L2224/05599 , H01L2924/00012
摘要： As etch-stop films or Cu-diffusion barrier films used in insulation films constituting conductor layers of a stacked structure, films having smaller dielectric constant than silicon nitride films are used, and an insulation film at a lower-layer part of the stacked structure is made to have smaller dielectric constant than that at an upper-layer part thereof, and further this insulation film is a silicon oxide (SiO) film and has, in the interior thereof, nano-pores of from 0.05 nm or more to 4 nm or less in diameter as chief construction. This makes it possible to dramatically reduce effective dielectric constant while keeping the mechanical strength of the conductore layers themselves, and can materialize a highly reliable and high-performance semiconductor device having mitigated the wiring delay of signals which pass through wirings.
摘要翻译：作为构成叠层结构的导体层的绝缘膜中的蚀刻停止膜或Cu扩散阻挡膜，使用介电常数比氮化硅膜低的膜，层叠结构的下层部的绝缘膜为使其具有比其上层部分更小的介电常数，并且此绝缘膜是氧化硅（SiO）膜，并且在其内部具有0.05nm以上至4nm的纳米孔，或者直径较小的主要建筑。这使得可以显着降低有效介电常数同时保持导体层本身的机械强度，并且可以实现高度可靠和高性能的半导体器件，其减轻了通过布线的信号的布线延迟。

70. 发明申请

US20060001169A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20060001169A1
公开(公告)日：2006-01-05
申请号：US11211547
申请日：2005-08-26
申请人： Jun Tanaka , Miharu Otani , Kiyoshi Ogata , Yasumichi Suzuki , Katsuhiko Hotta
发明人： Jun Tanaka , Miharu Otani , Kiyoshi Ogata , Yasumichi Suzuki , Katsuhiko Hotta
IPC分类号： H01L23/48
CPC分类号： H01L21/76835 , H01L21/3148 , H01L21/31612 , H01L21/31629 , H01L21/31633 , H01L21/318 , H01L21/76801 , H01L21/7681 , H01L23/3114 , H01L23/3171 , H01L23/5222 , H01L23/525 , H01L23/53228 , H01L23/53238 , H01L23/53295 , H01L23/564 , H01L23/585 , H01L24/45 , H01L24/48 , H01L2224/05569 , H01L2224/05572 , H01L2224/45144 , H01L2224/45147 , H01L2224/48247 , H01L2224/48465 , H01L2224/48599 , H01L2224/48799 , H01L2924/00014 , H01L2924/0002 , H01L2924/01015 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/13091 , H01L2924/181 , H01L2924/3025 , H01L2924/00 , H01L2224/05552 , H01L2224/05599 , H01L2924/00012
摘要： As etch-stop films or Cu-diffusion barrier films used in insulation films constituting conductor layers of a stacked structure, films having smaller dielectric constant than silicon nitride films are used, and an insulation film at a lower-layer part of the stacked structure is made to have smaller dielectric constant than that at an upper-layer part thereof, and further this insulation film is a silicon oxide (SiO) film and has, in the interior thereof, nano-pores of from 0.05 nm or more to 4 nm or less in diameter as chief construction. This makes it possible to dramatically reduce effective dielectric constant while keeping the mechanical strength of the conductore layers themselves, and can materialize a highly reliable and high-performance semiconductor device having mitigated the wiring delay of signals which pass through wirings.
摘要翻译：作为构成叠层结构的导体层的绝缘膜中的蚀刻停止膜或Cu扩散阻挡膜，使用介电常数比氮化硅膜低的膜，层叠结构的下层部的绝缘膜为使其具有比其上层部分更小的介电常数，并且此绝缘膜是氧化硅（SiO）膜，并且在其内部具有0.05nm以上至4nm的纳米孔，或者直径较小的主要建筑。这使得可以显着降低有效介电常数同时保持导体层本身的机械强度，并且可以实现高度可靠和高性能的半导体器件，其减轻了通过布线的信号的布线延迟。

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