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61. 发明授权

US4807235A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4807235A
公开(公告)日：1989-02-21
申请号：US905516
申请日：1986-09-09
申请人： Takahiro Suyama , Kohsei Takahashi , Saburo Yamamoto , Toshiro Hayakawa , Masafumi Kondo
发明人： Takahiro Suyama , Kohsei Takahashi , Saburo Yamamoto , Toshiro Hayakawa , Masafumi Kondo
IPC分类号： H01S5/00 , H01S5/02 , H01S5/028 , H01S5/042 , H01S5/06 , H01S5/10 , H01S5/16 , H01S5/227 , H01S3/19
CPC分类号： H01S5/10 , H01S5/0422 , H01S5/164 , H01S5/0202 , H01S5/0281 , H01S5/0425 , H01S5/0602 , H01S5/2275
摘要： A semiconductor laser device comprising a multi-layered semiconductor crystal containing an active region for laser oscillation, wherein the extended portions of said active region which are adjacent to both sides of one facet having the width of a selected value of said device constitute light-absorbing regions by which light in a high-order transverse mode is absorbed to a greater extent than that in a fundamental transverse mode, thereby achieving laser oscillation in a stable fundamental transverse mode up to a high output power.
摘要翻译：一种半导体激光器件，包括含有用于激光振荡的有源区的多层半导体晶体，其中与所述器件的选定值的宽度相邻的一个面的两侧相邻的所述有源区的延伸部分构成吸光在高次横模中的光被吸收到比基本横向模式更大程度地吸收的区域，从而实现高达高输出功率的稳定的基本横模的激光振荡。

62. 发明授权

US4694460A Stripe geometry semiconductor laser device 失效
标题翻译：条纹几何半导体激光器件
公开(公告)号：US4694460A
公开(公告)日：1987-09-15
申请号：US725094
申请日：1985-04-18
申请人： Toshiro Hayakawa , Takahiro Suyama , Saburo Yamamoto
发明人： Toshiro Hayakawa , Takahiro Suyama , Saburo Yamamoto
IPC分类号： H01S5/00 , H01S5/042 , H01S5/22 , H01S3/19
CPC分类号： H01S5/22
摘要： A stripe geometry semiconductor laser comprising a multi-layered crystal structure having a substrate and an active layer for laser oscillation; an etching blocking layer on said multi-layered crystal structure; and a striped mesa-type multi-layered crystal having a cladding layer, which serves as an electroconductive region, on said etching blocking layer, resulting in a difference in the distribution of the refractive index of light with regard to the active layer between the inside and the outside of said striped mesa-type multi-layered crystal.
摘要翻译：一种条纹几何半导体激光器，包括具有基板和激光振荡用有源层的多层晶体结构; 所述多层晶体结构上的蚀刻阻挡层; 以及在所述蚀刻阻挡层上具有用作导电区域的包覆层的条状台面型多层结晶，导致光的折射率分布与内部的有源层的分布不同和所述条状台面型多层晶体的外部。

63. 发明授权

US4637029A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US4637029A
公开(公告)日：1987-01-13
申请号：US633990
申请日：1984-07-24
申请人： Toshiro Hayakawa , Nobuyuki Miyauchi , Seiki Yano , Takahiro Suyama
发明人： Toshiro Hayakawa , Nobuyuki Miyauchi , Seiki Yano , Takahiro Suyama
IPC分类号： H01S5/00 , H01L29/205 , H01S5/32 , H01S5/323 , H01S3/19
CPC分类号： H01S5/32308 , H01L29/205 , H01S5/3201
摘要： A GaAlAs semiconductor laser element includes a Ga.sub.1-x Al.sub.x As active layer sandwiched by a first and second Ga.sub.1-y Al.sub.y As cladding layers. A Ga.sub.1-z Al.sub.z As substrate layer supports the first cladding layer, and a Ga.sub.1-z Al.sub.z As cap layer covers the second cladding layer. The AlAs mole fraction (z) of the substrate layer and the cap layer is selected slightly smaller than the AlAs mole fraction (x) of the active layer. Further, the active layer is located in the laser element so that the active layer is separated from the mounted surface by more than 35% of the laser element thickness, and is separated from the opposing surface by more than 18% of the laser element thickness.
摘要翻译： GaAlAs半导体激光元件包括被第一和第二Ga1-yAlyAs包覆层夹持的Ga1-xAlxAs有源层。 Ga 1-z Al z As衬底层支撑第一覆层，Ga1-zAlzAs覆盖层覆盖第二覆层。选择衬底层和覆盖层的AlAs摩尔分数（z）略小于活性层的AlAs摩尔分数（x）。此外，有源层位于激光元件中，使得有源层与安装表面分离超过激光元件厚度的35％，并且从相对表面分离超过激光元件厚度的18％。

64. 发明授权

US4569721A Method for the production of semiconductor lasers 失效
标题翻译：半导体激光器的制造方法
公开(公告)号：US4569721A
公开(公告)日：1986-02-11
申请号：US644437
申请日：1984-08-27
申请人： Toshiro Hayakawa , Nobuyuki Miyauchi , Seiki Yano , Takahiro Suyama
发明人： Toshiro Hayakawa , Nobuyuki Miyauchi , Seiki Yano , Takahiro Suyama
IPC分类号： H01S5/00 , H01S5/223 , H01S5/34 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： B82Y20/00 , H01S5/2232 , H01S5/34 , H01S5/2235
摘要： A method for the production of semiconductor lasers comprising: (a) forming a substrate having a striped portion on its face, said striped portion being formed into a mesa, (b) forming a current blocking layer on each of said striped portion and the remaining face of said substrate, (c) eliminating said current blocking layer only on said striped portion thereby allowing electric current to flow through the substrate and form said striped portion into a terrace or a groove, as a whole, and (d) successively laminating crystal growth layers for laser operation on the whole face of the substrate in strict conformity with said terrace or groove on the face of said substrate, thereby attaining stabilization of the transverse mode of laser oscillation.
摘要翻译：一种制造半导体激光器的方法，包括：（a）在其表面上形成具有条纹部分的基底，所述条纹部分形成台面，（b）在所述条纹部分和剩余部分中形成电流阻挡层（c）仅在所述条纹部分上消除所述电流阻挡层，从而允许电流流过基板，并将所述条纹部分整体形成为平台或槽，以及（d）依次层压晶体在基板的整个表面上激光操作的生长层严格地与所述基板的表面上的所述台面或凹槽相一致，从而实现激光振荡的横向模式的稳定。

65. 发明申请

US20060088072A1 Semiconductor laser apparatus 审中-公开
标题翻译：半导体激光装置
公开(公告)号：US20060088072A1
公开(公告)日：2006-04-27
申请号：US11255932
申请日：2005-10-24
申请人： Toshiro Hayakawa , Hideki Asano , Shinichi Nagahama , Yuji Matsuyama , Katsutoshi Komoto
发明人： Toshiro Hayakawa , Hideki Asano , Shinichi Nagahama , Yuji Matsuyama , Katsutoshi Komoto
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/22 , H01S5/34333
摘要： A GaN system stripe type semiconductor laser having an index guiding structure, and producing higher mode or multimode oscillation in the transverse mode, which is constructed such that the horizontal beam radiation angle of each of a plurality of the emitting regions is minimized to provide a high luminance focused beam. In a GaN system stripe type semiconductor laser, which has an index guiding structure constituted, for example, by a ridge structure formed on a p-GaN cap layer 28 and p-Al0.1Ga0.9N clad layer 27 with the width W2, and produces higher mode or multimode oscillation in the transverse mode, the effective index difference Δn between the central region of the stripe and outside of the stripe is set not greater than 1.5×10−2.
摘要翻译：一种具有折射率引导结构的GaN系带条型半导体激光器，在横模中产生较高模式或多模振荡，其结构使得多个发射区域中的每一个的水平射束辐射角最小化以提供高亮度聚焦光束。在GaN系带状半导体激光器中，其具有例如由p-GaN覆盖层28和p-Al 0.1 Ga 0.9形成的脊结构构成的折射引导结构具有宽度W 2的N包覆层27，并且在横向模式中产生较高模式或多模式振荡，条纹的中心区域和条纹外部之间的有效折射率差Deltan被设置为不大于1.5×10 ^{-2 。}

66. 发明授权

US06999486B2 Semiconductor laser element and semiconductor laser 有权
公开(公告)号：US06999486B2
公开(公告)日：2006-02-14
申请号：US10787768
申请日：2004-02-27
申请人： Toshiaki Kuniyasu , Toshiro Hayakawa , Toshiaki Fukunaga
发明人： Toshiaki Kuniyasu , Toshiro Hayakawa , Toshiaki Fukunaga
IPC分类号： H01S3/04
CPC分类号： H01S5/024 , H01S3/09415 , H01S5/0207 , H01S5/0224 , H01S5/02264 , H01S5/02423 , H01S5/4025
摘要： In a semiconductor laser element having a plurality of semiconductor layers formed on a substrate, a groove-form concave portion is formed on the surface of the substrate opposite to the surface having the semiconductor layers. The concave portion is filled with metal having a higher heat conductivity higher than the substrate. The semiconductor laser element achieves improved heat dissipation characteristics and high reliability even under high-output operation.

67. 发明授权

US06567444B2 High-power semiconductor laser device in which near-edge portions of active layer are removed 有权
标题翻译：去除有源层的近边缘部分的大功率半导体激光器件
公开(公告)号：US06567444B2
公开(公告)日：2003-05-20
申请号：US09820357
申请日：2001-03-29
申请人： Toshiro Hayakawa
发明人： Toshiro Hayakawa
IPC分类号： H01S500
CPC分类号： H01S5/164 , H01S5/209
摘要： In a semiconductor laser device, an active region, including a quantum well layer sandwiched between upper and lower optical waveguide layers, is formed on a substrate. A near-edge portion of the active region is etched down to a mid-thickness of the lower optical waveguide layer. A non-absorbing layer, made of a semiconductor material having a bandgap greater than photon energy of laser light generated in the active region, is formed over the active region. An etching stop layer is formed at the mid-thickness location in the lower optical waveguide layer so as to selectively stop the etching of the near-edge portion of the active region. An electron barrier layer, made of a semiconductor material having a bandgap greater than the bandgap of the upper optical waveguide layer, is formed at a mid-thickness location in the upper optical waveguide layer.
摘要翻译：在半导体激光器件中，在衬底上形成包括夹在上下光波导层之间的量子阱层的有源区。有源区域的近边缘部分被蚀刻到下部光波导层的中间厚度。在活性区域上形成由半导体材料制成的非吸收层，该半导体材料的带隙大于在有源区域中产生的激光的光子能量。在下部光波导层的中间位置处形成蚀刻停止层，以选择性地停止有源区域的近边缘部分的蚀刻。在上光波导层的中间厚度位置处形成由具有大于上光波导层的带隙的带隙的半导体材料制成的电子势垒层。

68. 发明授权

US06560264B1 Stripe type semiconductor light emitting element having InGaN active layer, combined with optical resonator including wavelength selection element 有权
标题翻译：具有InGaN有源层的带状半导体发光元件，与包含波长选择元件的光谐振器组合
公开(公告)号：US06560264B1
公开(公告)日：2003-05-06
申请号：US09604433
申请日：2000-06-28
申请人： Toshiro Hayakawa
发明人： Toshiro Hayakawa
IPC分类号： H01S310
CPC分类号： B82Y20/00 , H01L33/0045 , H01S5/0683 , H01S5/1078 , H01S5/141 , H01S5/2231 , H01S5/34333
摘要： A semiconductor light emitting apparatus includes a semiconductor light emitting element which includes a stripe structure and an active layer made of an InGaN material, and emits first light without laser oscillation; an optical resonator; and a first wavelength selection unit which allows resonance, in the optical resonator, of second light having a selected wavelength included in the first light emitted by the semiconductor light emitting element. Alternatively, instead of the first wavelength selection unit, a second wavelength selection unit which allows output of only the above second light from the semiconductor light emitting apparatus may be provided. In this case, the semiconductor light emitting apparatus may further include an optical detector which detects intensity of the second light; and an output regularizing unit which drives the semiconductor light emitting element based on the detected intensity so as to regularize the intensity of the second light.
摘要翻译：半导体发光装置包括半导体发光元件，其包括条状结构和由InGaN材料制成的有源层，并且发射没有激光振荡的第一光; 光学谐振器; 以及第一波长选择单元，其允许在所述光学谐振器中谐振具有由所述半导体发光元件发射的所述第一光中的所选波长的第二光。或者，代替第一波长选择单元，可以提供允许仅输出来自半导体发光装置的上述第二光的第二波长选择单元。在这种情况下，半导体发光装置还可以包括检测第二光的强度的光检测器; 以及输出规则化单元，其基于检测到的强度驱动半导体发光元件，以使第二光的强度正规化。

69. 发明授权

US5289484A Laser diode 失效
标题翻译：激光二极管
公开(公告)号：US5289484A
公开(公告)日：1994-02-22
申请号：US923763
申请日：1992-08-03
申请人： Toshiro Hayakawa
发明人： Toshiro Hayakawa
IPC分类号： H01S5/00 , H01S5/20 , H01S5/32 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/343 , H01S2301/18 , H01S5/2004 , H01S5/3211 , H01S5/3421 , H01S5/3432
摘要： A high efficiency laser diode that has a narrow beam divergence in a direction perpendicular with respect to the substrate, and a low threshold current.
摘要翻译：在与衬底垂直的方向上具有窄光束发散的低效率激光二极管和低阈值电流。

70. 发明授权

US5084892A Wide gain region laser diode 失效
标题翻译：宽增益区激光二极管
公开(公告)号：US5084892A
公开(公告)日：1992-01-28
申请号：US676634
申请日：1991-03-28
申请人： Toshiro Hayakawa
发明人： Toshiro Hayakawa
IPC分类号： H01S5/00 , H01S5/10 , H01S5/12 , H01S5/22
CPC分类号： H01S5/10 , H01S5/12 , H01S5/0655 , H01S5/1064 , H01S5/2036 , H01S5/22
摘要： A laser diode with a wide gain region (active layer) in which the side faces of the layers defining the gain region width are corrugated to suppress non-Fabry-Perot mode laser frequencies by scattering the light produced by stimulated emission.
摘要翻译：具有宽增益区域（有源层）的激光二极管，其中限定增益区域宽度的层的侧面是波纹状的，以通过散射由受激发射产生的光来抑制非法布里 - 珀罗模式激光频率。

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