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61. 发明授权

US5221365A Photovoltaic cell and method of manufacturing polycrystalline semiconductive film 失效
标题翻译：光电池和制造多晶半导体膜的方法
公开(公告)号：US5221365A
公开(公告)日：1993-06-22
申请号：US781486
申请日：1991-10-18
申请人： Shigeru Noguchi , Hiroshi Iwata , Keiichi Sano
发明人： Shigeru Noguchi , Hiroshi Iwata , Keiichi Sano
IPC分类号： H01L31/0236 , H01L31/0368 , H01L31/18 , H01L31/20
CPC分类号： H01L31/03682 , H01L31/0236 , H01L31/186 , H01L31/202 , Y02E10/546 , Y02P70/521 , Y10S148/09 , Y10S148/122 , Y10S148/153 , Y10S438/964
摘要： A thin film transistor and a photovoltaic cell wherein a polycrystalline semiconductive film, having a large grain size and high carrier mobility obtained by heat treatment of a polycrystalline semiconductive film, an amorphous semiconductive film, a microcrystalline semiconductive film or the like on a substrate with a textured surface, is used as a channel layer or a photo-activation layer, the textured surface being formed by etching one surface of the substrate or forming a textured thin film on the substrate.A method of manufacturing a polycrystalline semiconductive film, wherein a surface of a substrate is etched or a textured thin film is formed on the substrate to form a textured surface, and a polycrystalline semiconductive film, an amorphous semiconductive film, a microcrystalline semiconductive film or the like is formed on the textured surface, and the semiconductive film is polycrystallized by heat treatment.
摘要翻译：一种薄膜晶体管和光伏电池，其中通过在基板上热处理多晶半导体膜，非晶半导体膜，微晶半导体膜等而获得具有大晶粒尺寸和高载流子迁移率的多晶半导体膜，纹理表面用作沟道层或光致活化层，纹理表面通过蚀刻衬底的一个表面或在衬底上形成纹理化的薄膜而形成。一种制造多晶半导体膜的方法，其中蚀刻衬底的表面或在衬底上形成织构化薄膜以形成织构表面，以及多晶半导体膜，非晶半导体膜，微晶半导体膜或形成在纹理表面上，并且半导体膜通过热处理多晶化。

62. 发明授权

US5211761A Photovoltaic device and manufacturing method thereof 失效
标题翻译：光伏器件及其制造方法
公开(公告)号：US5211761A
公开(公告)日：1993-05-18
申请号：US722949
申请日：1991-06-28
申请人： Shigeru Noguchi , Hiroshi Iwata , Keiichi Sano
发明人： Shigeru Noguchi , Hiroshi Iwata , Keiichi Sano
IPC分类号： H01L31/0392 , H01L31/078 , H01L31/18
CPC分类号： H01L31/182 , H01L31/03921 , H01L31/078 , Y02E10/546 , Y02P70/521
摘要： A photovoltaic device according to the present invention has a buffer layer on a heat-resistant substrate for enhancing the adhesion characteristic of the substrate, a first semiconductor thin film including polycrystalline silicon of one conductivity type formed by a liquid phase growth method, and a second semiconductor thin film of opposite conductivity type, formed in this order.
摘要翻译：根据本发明的光电器件在耐热基板上具有用于增强基板的粘合特性的缓冲层，包括通过液相生长法形成的一种导电类型的多晶硅的第一半导体薄膜和第二半导体薄膜具有相反导电型的半导体薄膜，依次形成。

63. 发明授权

US5183780A Method of fabricating semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5183780A
公开(公告)日：1993-02-02
申请号：US658389
申请日：1991-02-20
申请人： Shigeru Noguchi , Satoshi Ishida , Hiroshi Iwata , Keiichi Sano , Shoichiro Nakayama
发明人： Shigeru Noguchi , Satoshi Ishida , Hiroshi Iwata , Keiichi Sano , Shoichiro Nakayama
IPC分类号： H01L29/78 , H01L21/02 , H01L21/20 , H01L21/225 , H01L21/285 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/786 , H01L29/92
CPC分类号： H01L29/78696 , H01L21/2022 , H01L21/2257 , H01L21/28525 , H01L27/1214 , H01L28/40 , H01L29/66757 , H01L29/66765 , H01L29/78618
摘要： In a method of fabricating a semiconductor device according to the present invention, a semiconductor film is formed on a substrate, and an insulator film is formed so as to cover the semiconductor film. Then, a dopant source is arranged on the insulator film and then, a region for electrical contact is irradiated with a high-energy beam through the dopant source. Consequently, the insulator film and the semiconductor film in the irradiated region are melted, to form a polycrystalline contact region having impurities supplied from the dopant source doped therein. Thus, the high-energy beam is irradiated to the region for electrical contact through the dopant source to form the polycrystalline contact region, thereby to make it possible to omit the patterning process such as etching processing for providing a contact hole.
摘要翻译：在制造根据本发明的半导体器件的方法中，在衬底上形成半导体膜，并且形成绝缘膜以覆盖半导体膜。然后，在绝缘膜上布置掺杂剂源，然后通过掺杂源用高能束照射用于电接触的区域。因此，照射区域中的绝缘体膜和半导体膜被熔化，以形成从其中掺杂的掺杂剂源提供的杂质的多晶接触区域。因此，高能束被照射到通过掺杂剂源进行电接触的区域以形成多晶接触区域，从而可以省略图案化处理，例如用于提供接触孔的蚀刻处理。

64. 发明授权

US5097338A Scanning type image sensor 失效
标题翻译：扫描型图像传感器
公开(公告)号：US5097338A
公开(公告)日：1992-03-17
申请号：US438087
申请日：1989-11-16
申请人： Hiroyuki Kuriyama , Kaneo Watanabe , Shigeru Noguchi , Hiroshi Iwata , Keiichi Sano
发明人： Hiroyuki Kuriyama , Kaneo Watanabe , Shigeru Noguchi , Hiroshi Iwata , Keiichi Sano
IPC分类号： H04N5/357 , H04N5/369
CPC分类号： H04N5/357
摘要： An image sensor includes a photodiode array having a number of photodiodes arranged in a linear line. Each of the photodiodes is connected to each of analog switches which are sequentially turned-on by a drive pulse. Each analog switch includes a parallel connection of a P-channel MOS-FET and an N-channel MOS-FET having the same gate capacitance. The drive pulse is applied to a gate of the P-channel MOS-FET through one inverter and to a gate of the N-channel MOS-FET through two inverters being connected in a cascade fashion. A delay time of the one inverter and a total delay time of the two inverters are set to be equal to each other, and therefore, the two MOS-FETs are simultaneously turned-on or -off in response to the same drive pulse. A dummy switch composed of a complementary MOS-FET circuit which acts in a completely reversed phase with respect to the analog switch is provided, and a switching noise occurring in the analog switch and a switching noise occurring in the dummy switch are canceled with each other at an output terminal.
摘要翻译：图像传感器包括具有以线性线排列的多个光电二极管的光电二极管阵列。每个光电二极管连接到通过驱动脉冲顺序导通的每个模拟开关。每个模拟开关包括P沟道MOS-FET和具有相同栅极电容的N沟道MOS-FET的并联连接。驱动脉冲通过一个反相器施加到P沟道MOS-FET的栅极，并通过两个逆变器串联连接到N沟道MOS-FET的栅极。一个反相器的延迟时间和两个反相器的总延迟时间被设置为彼此相等，因此两个MOS-FET同时响应于相同的驱动脉冲而导通或断开。提供由相对于模拟开关完全反相的互补MOS-FET电路构成的虚拟开关，并且在模拟开关中发生的开关噪声和在虚拟开关中发生的开关噪声彼此抵消在输出端子。

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