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    • 67. 发明申请
    • LIGHT EMITTING DIODE WITH ENHANCED QUANTUM EFFICIENCY AND METHOD OF FABRICATION
    • 具有增强量子效率的发光二极管和制造方法
    • US20120235116A1
    • 2012-09-20
    • US13387713
    • 2010-07-30
    • Jie SuOlga KrylioukYuriy MelnikHidehiro KojiriLu ChenTetsuya Ishikawa
    • Jie SuOlga KrylioukYuriy MelnikHidehiro KojiriLu ChenTetsuya Ishikawa
    • H01L33/04C30B25/02H01B1/02C30B25/08
    • H01L33/06H01L33/04H01L33/325
    • One embodiment of a quantum well structure comprises an active region including active layers that comprise quantum wells and barrier layers wherein some or all of the active layers are p type doped. P type doping some or all of the active layers improves the quantum efficiency of III-V compound semiconductor light emitting diodes by locating the position of the P-N junction in the active region of the device thereby enabling the dominant radiative recombination to occur within the active region. In one embodiment, the quantum well structure is fabricated in a cluster tool having a hydride vapor phase epitaxial (HVPE) deposition chamber with a eutectic source alloy. In one embodiment, the indium gallium nitride (InGaN) layer and the magnesium doped gallium nitride (Mg—GaN) or magnesium doped aluminum gallium nitride (Mg—AlGaN) layer are grown in separate chambers by a cluster tool to avoid indium and magnesium cross contamination. Doping of group III-nitrides by hydride vapor phase epitaxy using group III-metal eutectics is also described. In one embodiment, a source is provided for HVPE deposition of a p-type or an n-type group III-nitride epitaxial film, the source including a liquid phase mechanical (eutectic) mixture with a group III species. In one embodiment, a method is provided for performing HVPE deposition of a p-type or an n-type group III-nitride epitaxial film, the method including using a liquid phase mechanical (eutectic) mixture with a group III species.
    • 量子阱结构的一个实施例包括有源区,包括有源层,其包括量子阱和阻挡层,其中一些或全部有源层是p型掺杂的。 通过将PN结的位置定位在器件的有源区域中,P型掺杂部分或全部有源层提高了III-V族化合物半导体发光二极管的量子效率,从而能够在主动区域内发生主要的辐射复合 。 在一个实施例中,量子阱结构在具有共晶源合金的氢化物气相外延(HVPE)沉积室的簇工具中制造。 在一个实施例中,氮化铟镓(InGaN)层和掺杂镁的氮化镓(Mg-GaN)或镁掺杂的氮化铝镓(Mg-AlGaN)层通过簇工具在分开的室中生长以避免铟和镁的交叉 污染。 还描述了使用III族金属共晶体通过氢化物气相外延掺杂的III族氮化物。 在一个实施例中,提供了用于HVPE沉积p型或n型III族氮化物外延膜的源,该源包括具有III族的液相机械(共晶)混合物。 在一个实施例中,提供了一种用于执行p型或n型III族氮化物外延膜的HVPE沉积的方法,该方法包括使用具有III族物质的液相机械(共晶)混合物。
    • 68. 发明授权
    • Connector unit with a clicking feeling
    • 连接器单元具有点击感
    • US08267698B2
    • 2012-09-18
    • US12763352
    • 2010-04-20
    • Tetsuya IshikawaHiroaki ObikaneYasufumi Yahiro
    • Tetsuya IshikawaHiroaki ObikaneYasufumi Yahiro
    • H01R12/00H05K1/00
    • H01R13/20H01R12/716
    • A connector unit which is capable of suppressing lowering of a clicking feeling, even if the fitting and removing of connectors to and from each other is repeated. A spring portion that receives a contact portion of each of plug contacts of a plug connector when a receptacle connector and the plug connector are fitted to each other is formed on each of receptacle contacts of the receptacle connector. A protrusion is formed on the contact portion of each plug contact. The spring portion is formed to have an auxiliary contact portion that is urged by the protrusion when both of the connectors are fitted to each other, and a recess that receives the protrusion when the both of the connectors are fitted to each other.
    • 即使重复连接器的安装和拆卸,也能够抑制咔嗒感的降低的连接器单元。 当插座连接器和插头连接器彼此嵌合时,接收插头连接器的每个插头触点的接触部分的弹簧部分形成在插座连接器的每个插座触头上。 在每个插头触点的接触部分上形成突起。 弹簧部分形成为具有辅助接触部分,当两个连接器彼此嵌合时由突起推动的辅助接触部分和当两个连接器彼此嵌合时容纳突起的凹部。